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29 Jan 2007

Volume 90, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 052503 (2007); http://dx.doi.org/10.1063/1.2436715 (3 pages)

Biqin Huang, Igor Altfeder, and Ian Appelbaum
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Evidence for long-living charge carriers in electrically biased low-temperature-grown GaAs photoconductive switches

Gabriel C. Loata, Torsten Löffler, and Hartmut G. Roskos

Appl. Phys. Lett. 90, 052101 (2007); http://dx.doi.org/10.1063/1.2436719 (3 pages) | Cited 5 times

Online Publication Date: 29 January 2007

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Low-temperature-grown GaAs continues to be one of the most important materials of ultrafast optoelectronics. Little is known, however, about the recombination dynamics of photogenerated charge carriers under the influence of an applied electric field, and it has remained unclear to what extent biased photoswitches exhibit field screening effects. Here, the authors investigate the screening in biased few-micrometer-sized photoconductive gaps quantitatively and find that it can amount to tens of percent of the applied field. They find that a subgroup of the photogenerated carriers recombines on an unexpectedly long excitation-density-dependent time scale of nanoseconds to tens of nanoseconds.
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85.60.Bt Optoelectronic device characterization, design, and modeling

Anomalous conductivity and positive magnetoresistance in FeSi–SiO2–Si structures in the vicinity of a resistive transition

S. Witanachchi, H. Abou Mourad, H. Srikanth, and P. Mukherjee

Appl. Phys. Lett. 90, 052102 (2007); http://dx.doi.org/10.1063/1.2436634 (3 pages) | Cited 11 times

Online Publication Date: 30 January 2007

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Electrical and magnetic transport properties of FeSi–SiO2–Si junctions fabricated by depositing FeSi thin films on silicon substrates with the native oxide layer have been investigated. Near room temperature the carriers tunneled across the interface to the substrate with low resistance. With a decreasing temperature, the junction resistance increased more than three orders of magnitude near 270 K, which switched the current path to the film. The transition characteristics depend on the conductivity of the silicon substrate. A positive magnetoresistance that peaked near the transition temperature was observed. Similar behavior was seen for CoSi films while TiSi films did not show a transition in resistance.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
75.47.De Giant magnetoresistance
71.30.+h Metal-insulator transitions and other electronic transitions
81.15.Fg Pulsed laser ablation deposition
75.50.Bb Fe and its alloys

Undoped electron-hole bilayers in a GaAs/AlGaAs double quantum well

J. A. Seamons, D. R. Tibbetts, J. L. Reno, and M. P. Lilly

Appl. Phys. Lett. 90, 052103 (2007); http://dx.doi.org/10.1063/1.2437664 (3 pages) | Cited 23 times

Online Publication Date: 30 January 2007

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The authors present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional electron gas and two-dimensional hole gas. The authors report four-terminal transport measurements of the independently contacted electron and hole layers with balanced densities from 1.2×1011 cm−2 down to 4×1010 cm−2 at T = 300 mK. The mobilities can exceed 1×106 cm2 V−1 s−1 for electrons and 4×105 cm2 V−1 s−1 for holes.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films

Kyooho Jung, Hongwoo Seo, Yongmin Kim, Hyunsik Im, JinPyo Hong, Jae-Wan Park, and Jeon-Kook Lee

Appl. Phys. Lett. 90, 052104 (2007); http://dx.doi.org/10.1063/1.2437668 (3 pages) | Cited 46 times

Online Publication Date: 30 January 2007

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The resistance switching current-voltage (I-V) characteristics in polycrystalline NiO films were investigated in the temperature range of 10 K<T<300 K. Very clear reversible resistive switching phenomena were observed in the entire temperature range. An analysis of the temperature dependence of the resistance switching transport revealed additional features, not reported in previous studies, that weak metallic conduction and correlated barrier polaron hopping coexist in the high-resistance off state and that relative dominance depends on the temperature and defect configuration. In addition, the authors propose that metallic Ni defects, existing near polycrystalline (or granular) boundaries, play a key role in the formation of a metallic channel.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.-r Electrical properties of specific thin films
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Electric-pulse-induced reversible resistance in doped zinc oxide thin films

M. Villafuerte, S. P. Heluani, G. Juárez, G. Simonelli, G. Braunstein, and S. Duhalde

Appl. Phys. Lett. 90, 052105 (2007); http://dx.doi.org/10.1063/1.2437688 (3 pages) | Cited 29 times

Online Publication Date: 30 January 2007

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Nonvolatile, electric-pulse-induced resistance switching is reported on S and Co doped ZnO thin films deposited on different substrates using magnetron sputtering and laser ablation. Two resistance states were obtained by applying voltage pulses of different polarity. The switching was observed regardless of the substrate, dopant species, or microstructure of the samples. In the Co doped ZnO samples, the two resistance states are remarkably stable and uniform.
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73.61.Ga II-VI semiconductors

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, and K. N. Tu

Appl. Phys. Lett. 90, 052106 (2007); http://dx.doi.org/10.1063/1.2437689 (3 pages) | Cited 10 times

Online Publication Date: 30 January 2007

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In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Thermoelectric properties and a device based on n-InSb and p-InAs

Nakaba Kaiwa, Jun Yamazaki, Takayuki Matsumoto, Masataka Saito, Shigeo Yamaguchi, and Atsushi Yamamoto

Appl. Phys. Lett. 90, 052107 (2007); http://dx.doi.org/10.1063/1.2435605 (3 pages) | Cited 9 times

Online Publication Date: 30 January 2007

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The authors measured the temperature dependence of thermoelectric properties and fabricated a device based on n-InSb and p-InAs bulk crystals. The temperature was ranged from 300 to 600 K. The power factor of n-InSb was over 10−3 W/mK2 over the entire temperature range, and that of p-InAs was nearly 10−3 W/mK2 between 300 and 500 K. The open output voltage and the maximum output power of the device were 323 mV and 186.0 μW, respectively, when the temperature difference was 160 K. The authors proposed a device with impedance matching and a capacitor, and found that in the time-averaged region, the output power became a maximum, even when the internal resistance of the device was not equal to the load resistance.
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85.80.Fi Thermoelectric devices
72.80.Ey III-V and II-VI semiconductors
84.32.Tt Capacitors
72.20.Pa Thermoelectric and thermomagnetic effects

Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures

T. Figielski, T. Wosinski, A. Morawski, A. Makosa, J. Wrobel, and J. Sadowski

Appl. Phys. Lett. 90, 052108 (2007); http://dx.doi.org/10.1063/1.2435915 (3 pages) | Cited 4 times

Online Publication Date: 31 January 2007

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The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.
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75.50.Pp Magnetic semiconductors
75.47.Pq Other materials
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ch Domain walls and domain structure
75.75.-c Magnetic properties of nanostructures
72.20.My Galvanomagnetic and other magnetotransport effects

Proximity and anomalous field-effect characteristics in double-wall carbon nanotubes

Jie Lu, Sun Yin, L. M. Peng, Z. Z. Sun, and X. R. Wang

Appl. Phys. Lett. 90, 052109 (2007); http://dx.doi.org/10.1063/1.2435927 (3 pages) | Cited 26 times

Online Publication Date: 31 January 2007

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Proximity effect on field-effect characteristic in double-wall carbon nanotubes is investigated. In a semiconductor-metal double-wall carbon nanotube, the penetration of electron wave functions in the metallic shell to the semiconducting shell turns the original semiconducting shell into a metal where the local density of states is not zero at the Fermi level. By using a two-band tight-binding model on a ladder of two legs, it is demonstrated that anomalous field-effect characteristic in semiconductor-metal-type double-wall carbon nanotubes can be fully understood by the proximity effect of metallic phases.
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73.63.-b Electronic transport in nanoscale materials and structures
73.20.At Surface states, band structure, electron density of states

Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications

Wenfeng Xiang, Rui Dong, Dongsoo Lee, Seokjoon Oh, Dongjun Seong, and Hyunsang Hwang

Appl. Phys. Lett. 90, 052110 (2007); http://dx.doi.org/10.1063/1.2435330 (3 pages) | Cited 3 times

Online Publication Date: 1 February 2007

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Epitaxial Nb-doped SrTiO3 films grown on Si substrates for nonvolatile resistance memory applications were investigated. With a TiN buffer layer, a high-quality epitaxial Nb-doped SrTiO3 film was grown on the Si substrate, which was confirmed through x-ray diffraction and transmission electron microscopy. Compared with a control sample grown on a silicon substrate without a TiN buffer layer, the epitaxial Nb-doped SrTiO3 samples with the TiN buffer layer show the good resistance memory characteristics of a high resistance ratio, good retention characteristics, and uniformity. In terms of process compatibility with the standard silicon process, epitaxial Nb-doped SrTiO3 samples with a TiN buffer layer have the potential for use in future nonvolatile resistance memory applications.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.A- Nucleation and growth
81.15.Fg Pulsed laser ablation deposition

Electrical bistable behavior of an organic thin film through proton transfer

Deyu Tu, Liwei Shang, Ming Liu, Congshun Wang, Guiyuan Jiang, and Yanlin Song

Appl. Phys. Lett. 90, 052111 (2007); http://dx.doi.org/10.1063/1.2431461 (3 pages) | Cited 5 times

Online Publication Date: 2 February 2007

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This letter reports the synthesis of an organic molecule N,N′-bis (salicylidene)-1,6-hexanaphthenediamine (BSH) and the study of its electrical properties. Reversible electrical bistable behavior was observed both in BSH organic thin film on indium tin oxide substrate and in a crossbar device fabricated via standard integrated circuit processing with this thin film. The proton transfer model, induced by a bias higher than the switch threshold voltage, was employed to explain the electrical bistable phenomenon. This electrical bistability of BSH molecules is a key property for potential applications in organic nonvolatile memories and programable switches.
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73.61.Ph Polymers; organic compounds
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks

O. Renault, L. Fourdrinier, E. Martinez, L. Clavelier, C. Leroyer, N. Barrett, and C. Crotti

Appl. Phys. Lett. 90, 052112 (2007); http://dx.doi.org/10.1063/1.2435512 (3 pages) | Cited 18 times

Online Publication Date: 2 February 2007

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High-resolution photoelectron spectroscopy with synchrotron radiation (energy resolution of 50 meV) is used to investigate interfacial properties of Ge/GeOx (1 nm)/HfO2 (1 nm) gate stacks. With soft x rays, a reliable Ge3d core-level study is possible thanks to the much lower cross section of the Hf5p core level than that using Al Kα radiation. It is clearly shown that Hf-germanate bonding states are formed at the GeOx/HfO2 interface, with an additional Ge3d spectral component shifted to lower binding energy relative to GeO2.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states
77.55.-g Dielectric thin films

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

J.-S. Park, J. Bai, M. Curtin, B. Adekore, M. Carroll, and A. Lochtefeld

Appl. Phys. Lett. 90, 052113 (2007); http://dx.doi.org/10.1063/1.2435603 (3 pages) | Cited 39 times

Online Publication Date: 2 February 2007

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Defect-free germanium has been demonstrated in SiO2 trenches on silicon via Aspect Ratio Trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional photolithography, reactive ion etching of SiO2, and selective growth of Ge as thin as 450 nm. Full trapping of dislocations originating at the Ge/Si interface has been demonstrated for trenches up to 400 nm wide without the additional formation of defects at the sidewalls. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.
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68.55.-a Thin film structure and morphology
81.16.Nd Micro- and nanolithography
81.65.Cf Surface cleaning, etching, patterning
61.72.Lk Linear defects: dislocations, disclinations

Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process

Wayne Chen, Peng Chen, Yi Jing, S. S. Lau, T. F. Kuech, Jiariu Liu, Xeimei Wang, and Wei-Kan Chu

Appl. Phys. Lett. 90, 052114 (2007); http://dx.doi.org/10.1063/1.2450665 (3 pages) | Cited 4 times

Online Publication Date: 2 February 2007

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A twice-transferred layer of indium phosphide (InP) onto a host substrate by means of ion cutting and adhesive wafer bonding was demonstrated to be suitable for device integration. A thin layer was first transferred onto a glass handle through the ion-cutting process by hydrogen implantation and adhesive bonding. The InP/adhesive/glass structure was then bonded to a host substrate using benzocyclobutene, followed by thermal separation of the temporary bond. The surface of the resulting InP layer is that of the original substrate, demonstrating the feasibility of prefabricated device layer transfer without etching sacrificial donors. The electrical properties of the transferred layer are also presented.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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