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5 Feb 2007

Volume 90, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 063114 (2007); http://dx.doi.org/10.1063/1.2457525 (3 pages)

Thomas J. Mullen, Charan Srinivasan, J. Nathan Hohman, Susan D. Gillmor, Mitchell J. Shuster, Mark W. Horn, Anne M. Andrews, and Paul S. Weiss
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Ultrawide band quantum dot light emitting device by postfabrication laser annealing

C. K. Chia, S. J. Chua, J. R. Dong, and S. L. Teo

Appl. Phys. Lett. 90, 061101 (2007); http://dx.doi.org/10.1063/1.2458515 (3 pages) | Cited 12 times

Online Publication Date: 5 February 2007

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An ultrawide band quantum dot (QD) light emitting device (LED) with bandwidth of 360 nm covering 1284–1644 nm spectral range has been demonstrated by postfabrication laser-irradiation technique. The integrated light output of the QD LED was found to increase by four times after laser annealing, attributed to the improved homogeneity of the QDs and enhanced lateral electrical and optical confinements at the active region after intermixing. Large wavelength blueshift of 315 nm has been obtained at the laser annealed region and an overall increase in bandwidth of 22% has been obtained in the QD LED after postfabrication laser annealing.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Hologram replication technique in glass plates using corona charging

Daisuke Sakai, Kenji Harada, Shun-ichi Kamemaru, and Takashi Fukuda

Appl. Phys. Lett. 90, 061102 (2007); http://dx.doi.org/10.1063/1.2459675 (3 pages) | Cited 4 times

Online Publication Date: 5 February 2007

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The authors propose a technique of recording in glass plates using corona charging. The recording material used in this study is conventional soda-lime glass. A surface-relief hologram on an azobenzene polymer film coated on a glass plate can be recorded as an electric charge distribution in the glass plate using corona charging. The hologram recorded in the glass plate can be reconstructed as a surface-relief structure on a fresh azobenzene polymer film coated on the glass plate, again using corona charging.
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42.40.Ht Hologram recording and readout methods
42.70.Ln Holographic recording materials; optical storage media
42.79.Vb Optical storage systems, optical disks
42.70.Ce Glasses, quartz
52.80.Hc Glow; corona

“Plug and play” single-photon sources

Xiulai Xu, Ian Toft, Richard T. Phillips, Jonathan Mar, Kiyotaka Hammura, and David A. Williams

Appl. Phys. Lett. 90, 061103 (2007); http://dx.doi.org/10.1063/1.2437727 (3 pages) | Cited 6 times

Online Publication Date: 5 February 2007

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The authors report a “plug and play” source of single photons, with full integration to a single-mode optical fiber. One end of the fiber is attached to the top of an InGaAs/GaAs quantum dot wafer. The other end is connected via a wavelength-division multiplexing system to two separate fibers: one for carrying excitation light and the other for emitted light. A Hanbury-Brown and Twiss [Nature (London) 77, 27 (1956)] measurement was performed on the emission from single excitons recombining in the quantum dots. A second-order correlation function at zero time delay of approximately 0.01 indicates a nearly ideal source of single photons. The maximum variation of peak position over 24 days is less than 0.1 nm.
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42.81.Wg Other fiber-optical devices
42.72.-g Optical sources and standards
42.82.Gw Other integrated-optical elements and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High-performance, large area, deep ultraviolet to infrared polarizers based on 40 nm line/78 nm space nanowire grids

Jian Jim Wang, Frank Walters, Xiaoming Liu, Paul Sciortino, and Xuegong Deng

Appl. Phys. Lett. 90, 061104 (2007); http://dx.doi.org/10.1063/1.2437731 (3 pages) | Cited 22 times

Online Publication Date: 5 February 2007

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Large-area, 100 mm in diameter, aluminum nanowire grids with 40 nm line/78 nm space were fabricated with full-wafer immersion interference lithography. The aluminum nanowire grids with a 59 nm half-pitch work as a highly efficient optical polarizer for deep ultraviolet wavelength down to ∼ 250 nm. In addition, an extremely high contrast from 10 000:1 to 50 000:1 was achieved across the whole visible and near-infrared wavelength range, along with good transmittance (85%–90%). The broadband large-area high-performance polarizer operating down to deep ultraviolet wavelength opens up applications including semiconductor lithography and metrology applications.
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42.79.Ci Filters, zone plates, and polarizers
42.86.+b Optical workshop techniques
85.40.Hp Lithography, masks and pattern transfer

Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

Yahya Moubarak Meziani, Taiichi Otsuji, Mitsuhiro Hanabe, Takuma Ishibashi, Tomohiro Uno, and Eiichi Sano

Appl. Phys. Lett. 90, 061105 (2007); http://dx.doi.org/10.1063/1.2459879 (3 pages) | Cited 16 times

Online Publication Date: 6 February 2007

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A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.
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85.30.Tv Field effect devices
84.40.-x Radiowave and microwave (including millimeter wave) technology

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

D. Simeonov, E. Feltin, H.-J. Bühlmann, T. Zhu, A. Castiglia, M. Mosca, J.-F. Carlin, R. Butté, and N. Grandjean

Appl. Phys. Lett. 90, 061106 (2007); http://dx.doi.org/10.1063/1.2460234 (3 pages) | Cited 16 times

Online Publication Date: 6 February 2007

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The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼ 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm2. The lasing emission linewidth is down to 0.033 nm.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Trapping and manipulation of a single micro-object in solution with femtosecond laser-induced mechanical force

Yuqiang Jiang, Yoshitaka Matsumoto, Yoichiroh Hosokawa, Hiroshi Masuhara, and Isamu Oh

Appl. Phys. Lett. 90, 061107 (2007); http://dx.doi.org/10.1063/1.2472188 (3 pages) | Cited 8 times

Online Publication Date: 6 February 2007

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A nondestructive and noncontact method to trap and manipulate a microparticle in solution is proposed by utilizing femtosecond laser-induced nonlinear phenomena. A 90 μm diameter polystyrene bead in solution was trapped and manipulated by scanning femtosecond laser pulses around it, which was ascribed to shockwave, cavitation bubble, and jet flow. The maximum mechanical force exerted by laser irradiation was estimated to be over 1 μN. In comparison with conventional optical tweezers, this method provides not only a much larger trapping force but also a noninvasive advantage.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Wafer-bonded surface plasmon waveguides

Pierre Berini, Greg Mattiussi, Nancy Lahoud, and Robert Charbonneau

Appl. Phys. Lett. 90, 061108 (2007); http://dx.doi.org/10.1063/1.2468660 (3 pages) | Cited 10 times

Online Publication Date: 7 February 2007

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Direct wafer bonding and thinning were explored as an approach for constructing long-range surface plasmon waveguides. The structures consist of a thin metal stripe deposited into a shallow trench etched into one of the claddings, to which another cladding of the same material is directly bonded. The approach was developed first using Pyrex wafers in order to assess feasibility and then using lithium niobate wafers. Optical and electro-optical measurements validate the approach.
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42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
78.66.Bz Metals and metallic alloys

Slow oscillations in the low-temperature optical reflectance spectra of ZnO: Surface space-charge effect

J. Q. Ning, S. J. Xu, S. L. Shi, and M. H. Xie

Appl. Phys. Lett. 90, 061109 (2007); http://dx.doi.org/10.1063/1.2472523 (3 pages) | Cited 2 times

Online Publication Date: 7 February 2007

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Low-temperature optical reflectance spectra from (10math0) surface of a ZnO crystalline rod were measured at near normal incidence. These spectra show slow oscillations which originate from the interference between lights reflected from the front surface and the second surface of a space-charge double layer formed on ZnO (10math0). It is found that the oscillation period is linearly dependent on the wavelength of light. The expanding rate of the space-charge double layer is estimated to be 1.3 nm/min.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Jp Dielectric breakdown and space-charge effects

Highly efficient photoluminescent films made by mixing aminopropyltriethoxysilane, Eu3+ ions, and thenoyltrifluoroacetone

Elias Stathatos and Panagiotis Lianos

Appl. Phys. Lett. 90, 061110 (2007); http://dx.doi.org/10.1063/1.2450662 (3 pages) | Cited 1 time

Online Publication Date: 7 February 2007

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A very efficient phosphor based on a nanocomposite organic-inorganic aminopropyltriethoxysilane gel, incorporating Eu3+ ions, and thenoyltrifluoroacetone has been synthesized. Gels have been deposited as thin films on solid substrates using a sol-gel procedure based on acetic acid solvolysis. The luminescence intensity of this material by near-UV excitation and ligand-to-metal energy transfer was very high. It was equivalent to that of laser dyes and the luminescence quantum yield approached 100%.
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81.07.Pr Organic-inorganic hybrid nanostructures
78.66.Sq Composite materials
78.55.-m Photoluminescence, properties and materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
64.75.-g Phase equilibria

Metallic slit waveguide for dispersion-free low-loss terahertz signal transmission

Markus Wächter, Michael Nagel, and Heinrich Kurz

Appl. Phys. Lett. 90, 061111 (2007); http://dx.doi.org/10.1063/1.2472544 (3 pages) | Cited 26 times

Online Publication Date: 8 February 2007

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Transmission characteristics of a metallic waveguide are presented combining negligible dispersion, very low attenuation, and two-dimensional mode confinement. The waveguide is fabricated by sawing a 270 μm wide slit through a 40 mm wide and 300 μm thick silicon slab and subsequent metalization of all faces. Single-mode terahertz pulses propagating through the slit are excited at one end of the waveguide using a photoconductive antenna array and detected with a freely positionable photoconductive probe tip. Low-loss propagation with negligible group velocity dispersion is observed in the 0.1–1.0 THz frequency range. Compared to former approaches considerably stronger mode confinement is achieved.
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84.40.Az Waveguides, transmission lines, striplines
42.82.Gw Other integrated-optical elements and systems

Extrinsic photonic crystals: Photonic band structure calculations of a doped semiconductor under a magnetic field

Chun Xu, Dezhuan Han, Xin Wang, Xiaohan Liu, and Jian Zi

Appl. Phys. Lett. 90, 061112 (2007); http://dx.doi.org/10.1063/1.2437723 (3 pages) | Cited 10 times

Online Publication Date: 9 February 2007

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Doped semiconductors are intrinsically homogeneous media. However, by applying an external magnetic field that has a spatially periodic variation, doped semiconductors can behave extrinsically like conventional photonic crystals. The authors show this possibility theoretically by calculating the photonic band structures of a doped semiconductor under an external, spatially periodic magnetic field. Homogeneous media, behaving like conventional photonic crystals under some external, spatially periodic fields, define another kind of photonic crystals: extrinsic photonic crystals.
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42.70.Qs Photonic bandgap materials

Experimental analysis of surface plasmon behavior in metallic circular slits

Chin-Kai Chang, Ding-Zheng Lin, Chau-Shioung Yeh, Chih-Kung Lee, Yu-Chia Chang, Ming-Wei Lin, Ji-Tian Yeh, and Jung-Ming Liu

Appl. Phys. Lett. 90, 061113 (2007); http://dx.doi.org/10.1063/1.2471966 (3 pages) | Cited 7 times

Online Publication Date: 9 February 2007

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Using a focused ion beam, the authors fabricated metallic circular slits onto a glass substrate coated with silver film. The influence of the number of slits and the focusing light phenomena was investigated by capturing the light transmitted through the circular slits. They demonstrate experimentally that the circular grating formed by a set of periodical slits can excite both stronger surface plasmon (SP) and localized surface plasmon as the number of slits increases. They found that the SP tended to congregate at the center of the circular grating, and that the reemitted light could be used to achieve a focusing phenomenon.
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78.68.+m Optical properties of surfaces
78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Dj Gratings
42.25.Bs Wave propagation, transmission and absorption

Tunable giant Faraday rotation of exciton in semiconductor quantum wells embedded in a microcavity

Jiang-Tao Liu and Kai Chang

Appl. Phys. Lett. 90, 061114 (2007); http://dx.doi.org/10.1063/1.2471993 (3 pages) | Cited 7 times

Online Publication Date: 9 February 2007

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The Faraday rotation of an exciton in a GaAs quantum well (QW) embedded in a microcavity is investigated theoretically. The authors find that the Faraday rotation is enhanced remarkably by the microcavity, with a magnitude about two orders of magnitude larger than that of a single QW without microcavity. The Faraday rotation can be tuned by changing the incident angle of the pump and probe lights, or by varying the temperature or an external electric field. With an appropriate detuning between the cavity mode of the pump and probe lights, the Faraday rotation spectrum displays a strongly asymmetric line shape, which can easily be detected experimentally.
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78.67.De Quantum wells
78.20.Ls Magneto-optical effects
73.21.Fg Quantum wells
71.35.-y Excitons and related phenomena

Evaluation of UV absorption coefficient in laser-modified fused silica

R. A. Negres, M. W. Burke, S. B. Sutton, P. DeMange, M. D. Feit, and S. G. Demos

Appl. Phys. Lett. 90, 061115 (2007); http://dx.doi.org/10.1063/1.2472775 (3 pages) | Cited 6 times

Online Publication Date: 9 February 2007

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Laser-induced damage in transparent dielectrics leads to the formation of laser-modified material as a result of exposure to extreme localized temperatures and pressures. In this work, an infrared thermal imaging system in combination with a fluorescence microscope is used to map the dynamics of the local surface temperature and fluorescence intensity under cw, UV excitation of laser-modified fused silica within a damage site. The energy deposited via linear absorption mechanisms and the absorption coefficient of the modified material are estimated based on a thermal diffusion model. In addition, irreversible changes in the absorption following extended laser exposure were observed.
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81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Gi Light-sensitive materials
61.82.-d Radiation effects on specific materials
78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics

Electroluminescence from surface oxidized silicon nanoparticles dispersed within a polymer matrix

Rebekah K. Ligman, Lorenzo Mangolini, Uwe R. Kortshagen, and Stephen A. Campbell

Appl. Phys. Lett. 90, 061116 (2007); http://dx.doi.org/10.1063/1.2471662 (3 pages) | Cited 13 times

Online Publication Date: 9 February 2007

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In this work electrically induced light emission from crystalline silicon nanoparticles randomly dispersed within a polymer matrix was obtained. The observed polymer/silicon nanoparticle device electroluminescence (EL) was composed of simultaneous emission from the polymer and the silicon nanoparticles. The device emission was nonscalar and shifted from a polymer to a silicon nanoparticle dominant emission with increased current density. The device JV characteristics were bulk dominated independent of the nanoparticle loading. The nonscalar field dependence and bulk dominated carrier transport properties strongly suggest that the observed silicon nanoparticle emission was produced by an EL energy transfer process.
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85.60.Jb Light-emitting devices
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Electron density in low density capillary plasma channel

T. Palchan, D. Kaganovich, P. Sasorov, P. Sprangle, C. Ting, and A. Zigler

Appl. Phys. Lett. 90, 061501 (2007); http://dx.doi.org/10.1063/1.2472525 (3 pages) | Cited 8 times

Online Publication Date: 7 February 2007

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A low density plasma channel of 1017 cm−3 is created in a capillary discharge. The plasma channel is characterized through the hydrogen plasma spectra in the Balmer Hα line. The measured plasma density profiles were found to be in qualitative agreement with the hydrodynamic simulations. Guiding over many vacuum diffraction length using a plasma channel operating in the low density regime is demonstrated.
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52.50.Dg Plasma sources
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Vp Discharge in vacuum
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.65.Kj Magnetohydrodynamic and fluid equation
52.38.Dx Laser light absorption in plasmas (collisional, parametric, etc.)
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Fe-based bulk metallic glass with high plasticity

K. F. Yao and C. Q. Zhang

Appl. Phys. Lett. 90, 061901 (2007); http://dx.doi.org/10.1063/1.2437722 (3 pages) | Cited 39 times

Online Publication Date: 5 February 2007

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Fe-based bulk metallic glasses usually exhibit very poor ductility (<0.5%), which has limited their applications. Here the authors report an Fe-based bulk metallic glass which shows a plastic strain of ∼ 5.2%, together with high strength and distinct strain-hardening characteristics. Its yield strength is ∼ 2.32 GPa, while the ultimate strength is ∼ 2.80 GPa due to the strain-hardening effect. Multiple shear bands and related shear ledges are observed on the deformed specimen. The high plasticity and strain hardening are attributed to the nanoscale inhomogeneity that resulted from liquid phase separation, which can hinder the propagation of shear bands and promote multiple shearing.
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81.05.Kf Glasses (including metallic glasses)
81.40.Lm Deformation, plasticity, and creep
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
62.20.F- Deformation and plasticity
64.75.-g Phase equilibria

Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance

R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, James S. Harris, M. Motyka, and J. Misiewicz

Appl. Phys. Lett. 90, 061902 (2007); http://dx.doi.org/10.1063/1.2437729 (3 pages) | Cited 6 times

Online Publication Date: 5 February 2007

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Contactless electroreflectance (CER) spectroscopy has been applied to study band bending in GaInNAsSb/GaAs quantum well (QW) structures. It has been observed that CER features significantly changes upon annealing: the period of GaAs-related Franz-Keldysh oscillations increases; intensities of excited QW transitions rose compared to the intensity of the fundamental QW transition. The observed changes in CER spectra have been explained by a shift of the Fermi level in the GaInNAsSb layer: the defect states in as-grown GaInNAsSb tend to pin the Fermi level at an energy characteristic for these defects; annealing removes defects from this material and effectively shifts the Fermi level to the conduction band.
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73.21.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing
78.20.Jq Electro-optical effects
78.67.De Quantum wells
71.55.Eq III-V semiconductors

Three-dimensional atom probe studies of an InxGa1−xN/GaN multiple quantum well structure: Assessment of possible indium clustering

Mark J. Galtrey, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, Debbie J. Stokes, Peter H. Clifton, and Alfred Cerezo

Appl. Phys. Lett. 90, 061903 (2007); http://dx.doi.org/10.1063/1.2431573 (3 pages) | Cited 42 times

Online Publication Date: 5 February 2007

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An InxGa1−xN/GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three-dimensional atom probe. The quantum wells were clearly imaged and the indium fraction x measured to be 0.19±0.01, in good agreement with x-ray diffraction measurements. The distribution of indium in the MQWs was analyzed: no evidence for either high indium concentration regions or indium clustering was found, in contrast with many of the transmission electron microscopy studies in the literature. The authors conclude that indium clustering is not necessary for bright luminescence in InGaN.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
61.72.S- Impurities in crystals

Effect of grain shape on the agglomeration of polycrystalline thin films

Mathieu Bouville

Appl. Phys. Lett. 90, 061904 (2007); http://dx.doi.org/10.1063/1.2454452 (3 pages) | Cited 4 times

Online Publication Date: 6 February 2007

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The shape of the grains can dramatically affect the agglomeration of polycrystalline thin films by grain-boundary grooving. Anisotropy plays a central role in the stability against agglomeration of faceted films. Even a small difference between the interface energies of the facets can destabilize faceted grains or, on the contrary, it can make them perfectly stable at any thickness.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Mm Grain and twin boundaries
68.35.Md Surface thermodynamics, surface energies

Unusual carrier thermalization in a dilute GaAs1−xNx alloy

P. H. Tan, Z. Y. Xu, X. D. Luo, W. K. Ge, Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 90, 061905 (2007); http://dx.doi.org/10.1063/1.2454552 (3 pages) | Cited 1 time

Online Publication Date: 6 February 2007

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Photoluminescence (PL) properties of the E0, E0+Δ0, and E+ bands in an x = 0.62% GaAs1−xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2kBT, suggesting peculiar density of states and carrier dynamics of the E+ band.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.50.Fq High-field and nonlinear effects
71.20.Nr Semiconductor compounds

Nanoanalysis of crystalline properties of GaN thin film using tip-enhanced Raman spectroscopy

Ryota Matsui, Prabhat Verma, Taro Ichimura, Yasushi Inouye, and Satoshi Kawata

Appl. Phys. Lett. 90, 061906 (2007); http://dx.doi.org/10.1063/1.2458343 (3 pages) | Cited 12 times

Online Publication Date: 6 February 2007

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Nanoscaled variation in crystalline properties was demonstrated through tip-enhanced Raman scattering (TERS) for a thin GaN sample, which apparently showed good and uniform crystalline properties at microscale in conventional micro-Raman scattering. The observation was attributed to the field enhancement and the super-resolution associated with the near-field technique. The enhancement factor of the TERS intensity was assessed to be larger than 2.8×104. Variations in crystalline properties were observed at spatial resolution beyond the diffraction limit of the probing light. The authors propose TERS to be an efficient technique for nanoscale characterization of crystalline properties for the nitride-based semiconductor devices.
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78.30.Fs III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

S. W. Lee, T. Minegishi, W. H. Lee, H. Goto, H. J. Lee, S. H. Lee, Hyo-Jong Lee, J. S. Ha, T. Goto, T. Hanada, M. W. Cho, and T. Yao

Appl. Phys. Lett. 90, 061907 (2007); http://dx.doi.org/10.1063/1.2470163 (3 pages) | Cited 6 times

Online Publication Date: 6 February 2007

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Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

On the strong and narrow absorption signature in lactose at 0.53 THz

E. R. Brown, J. E. Bjarnason, A. M. Fedor, and T. M. Korter

Appl. Phys. Lett. 90, 061908 (2007); http://dx.doi.org/10.1063/1.2437107 (3 pages) | Cited 23 times

Online Publication Date: 6 February 2007

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The authors report on the room-temperature characterization of a narrow absorption signature in an organic molecular solid (α-lactose monohydrate) centered around 530 GHz and having a full width at half maximum as small as 23 GHz. Three different spectrometric techniques were applied, two of them (tunable photomixing and tunable frequency multiplication) having a high enough resolution (⪡100 MHz) to accurately curve fit the signature and determine that it is much better described by a Lorentzian than a Gaussian function. The Lorentzian model provides an estimate of 14 ps for the damping time associated with this signature.
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78.70.Gq Microwave and radio-frequency interactions
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