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5 Feb 2007

Volume 90, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 063114 (2007); http://dx.doi.org/10.1063/1.2457525 (3 pages)

Thomas J. Mullen, Charan Srinivasan, J. Nathan Hohman, Susan D. Gillmor, Mitchell J. Shuster, Mark W. Horn, Anne M. Andrews, and Paul S. Weiss
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Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7

D. Liu, K. Tse, and J. Robertson

Appl. Phys. Lett. 90, 062901 (2007); http://dx.doi.org/10.1063/1.2433031 (3 pages) | Cited 8 times

Online Publication Date: 5 February 2007

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The electronic structure of the high dielectric constant oxide La2Hf2O7 and its oxygen vacancies have been calculated. The lowest conduction band is localized on Hf d states and the next is localized on Hf and La d states. The charge density on the O vacancy surrounded by 4 La ions, when in clusters, can become localized on next neighbor Hf ions. It may help create interface dipoles to modify effective work functions.
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71.20.Ps Other inorganic compounds
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.J- Point defects and defect clusters
71.55.Ht Other nonmetals
73.30.+y Surface double layers, Schottky barriers, and work functions

Low-temperature electrical characteristics of Bi3.15Nd0.85Ti3O12 thin films

Di Wu, Guoliang Yuan, and Aidong Li

Appl. Phys. Lett. 90, 062902 (2007); http://dx.doi.org/10.1063/1.2450647 (3 pages) | Cited 6 times

Online Publication Date: 5 February 2007

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Ferroelectric and dielectric characteristics of Bi3.15Nd0.85Ti3O12 ferroelectric thin films were studied at temperatures from 296 down to 100 K. The temperature dependence of these characteristics was discussed in terms of the Rayleigh model. Although the Rayleigh law fits well the dielectric data below 140 K, it cannot describe the data at higher temperatures, where a mechanism contributes to the dielectric constant without producing losses. This mechanism may probably be related to bending of domain walls pinned by two nearest obstacles. The contribution from such bending is frozen out at low temperatures due to enhanced domain pinning.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)

Growth and structure of PbVO3 thin films

Lane W. Martin, Qian Zhan, Yuri Suzuki, R. Ramesh, Miaofang Chi, Nigel Browning, Teruyasu Mizoguchi, and Jens Kreisel

Appl. Phys. Lett. 90, 062903 (2007); http://dx.doi.org/10.1063/1.2435944 (3 pages) | Cited 20 times

Online Publication Date: 6 February 2007

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Multifunctional materials promise to provide the foundation for a new class of devices in which functional properties are coupled to one another. Examples include magnetoelectric materials in which magnetic and ferroelectric properties are coupled. Here the authors report the successful growth of single phase, fully epitaxial thin films of the multifunctional material, PbVO3, using pulsed laser deposition. This growth offers an alternative means for the production of PbVO3 outside of high-temperature and high-pressure techniques through growth of epitaxial thin films on various substrates. The structure of this highly distorted perovskite is examined using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy.
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81.15.Fg Pulsed laser ablation deposition
78.30.Hv Other nonmetallic inorganics
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Large and stable thickness coupling coefficients of [001]C-oriented KNbO3 and Li-modified (K,Na)NbO3 single crystals

Matthew Davis, Naama Klein, Dragan Damjanovic, Nava Setter, Andreas Gross, Volker Wesemann, Sophie Vernay, and Daniel Rytz

Appl. Phys. Lett. 90, 062904 (2007); http://dx.doi.org/10.1063/1.2472524 (3 pages) | Cited 9 times

Online Publication Date: 7 February 2007

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Large thickness coupling factors kT ⩽ 0.7 are measured in both [001]C-oriented (45° cut in the orthorhombic ac plane), monodomain and [001]C-poled, domain-engineered single crystals of KNbO3. kT is extremely stable over a large temperature range, remaining high ( ≥ 0.65) even upon heating and cooling through the orthorhombic-tetragonal phase transition. This is likely related to another finding that spontaneously high kT values ( ⩽ 0.68) are observed in as-grown (unpoled), [001]C-cut, polydomain KNbO3 crystals. kT is also stable upon thinning to thicknesses below 60 μm, as required for high-frequency applications. Finally, large kT values ( ⩽ 0.7) are reported in [001]C-poled, polydomain, Li-doped (K0.5Na0.5)NbO3.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
64.70.K- Solid-solid transitions
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

Enhanced piezoelectric effect of relaxor ferroelectrics in nonpolar direction

L.-F. Wang and J.-M. Liu

Appl. Phys. Lett. 90, 062905 (2007); http://dx.doi.org/10.1063/1.2472526 (3 pages) | Cited 5 times

Online Publication Date: 7 February 2007

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The polarization and electromechanical behaviors of relaxor ferroelectrics (RFs) are simulated by numerically solving the time-dependent Landau-Ginzburg equation based on a phenomenological dipole defect model. In comparison with normal ferroelectric lattice, the RF lattice shows significantly enhanced piezoelectric response along the nonspontaneous polarization axis. The evolution of dipole configuration suggests that this behavior is ascribed to the 90° flips of small-sized “super-ferroelectric” clusters induced by dipole defects.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization

Crystalline Pr2O3 monolayers on Si(111)

N. M. Jeutter, W. Moritz, A. Sidorenko, and A. Stierle

Appl. Phys. Lett. 90, 062906 (2007); http://dx.doi.org/10.1063/1.2450661 (3 pages) | Cited 8 times

Online Publication Date: 8 February 2007

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In this study the authors present an x-ray analysis of the structure and of the interface of 1 ML Pr2O3 on Si(111). The x-ray analysis shows that the interface is formed of a Si–O–Pr bond with Pr above the T4 adsorption site of silicon (111). The layer exhibits a thickness of 0.6 nm corresponding to one bulk unit cell from the hexagonal phase of Pr2O3. The layer is well ordered with Pr–O bond lengths close to the bulk values and a Si–O distance of 0.18 nm.
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
68.43.Mn Adsorption kinetics

Growth and properties of gradient free sol-gel lead zirconate titanate thin films

F. Calame and P. Muralt

Appl. Phys. Lett. 90, 062907 (2007); http://dx.doi.org/10.1063/1.2472529 (3 pages) | Cited 30 times

Online Publication Date: 8 February 2007

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Pb(Zrx,Ti1−x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form ±12 to ±2.5 at. %. The 2 μm thick, dense and crack-free films exhibited a {100}-texture index of 98.4%. Grain diameters increased by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant ε33,f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31,f was measured as −17.7 Cm2.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Submicron domain inversion in Mg-doped LiNbO3 using backswitched poling with short voltage pulses

Yunlin Chen, Weiguo Yan, Dongdong Wang, Shaolin Chen, Guangyin Zhang, Jiangfeng Zhu, and Zhiyi Wei

Appl. Phys. Lett. 90, 062908 (2007); http://dx.doi.org/10.1063/1.2437126 (3 pages) | Cited 1 time

Online Publication Date: 9 February 2007

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The authors describe a technique for fabricating submicron domain inversion structures in MgO:LiNbO3. The method is based on controlled backswitched poling with short voltage pulses. Using this method, short periodic structures consisting of submicron domain patterns have been achieved in Z-cut MgLN crystal. The structure is fully compatible with nonlinear optical integrated waveguide applications. High performance of the submicron domain inversion structure is also demonstrated by evaluating its potential as second harmonic generation.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
42.70.Mp Nonlinear optical crystals

Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition

W. J. Maeng, S. J. Lim, Soon-Ju Kwon, and H. Kim

Appl. Phys. Lett. 90, 062909 (2007); http://dx.doi.org/10.1063/1.2472189 (3 pages) | Cited 4 times

Online Publication Date: 9 February 2007

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Atomic layer deposition (ALD) process for oxynitrides of high-k gate dielectrics employing NH4OH as a single source for reactants, water and NH3, was studied. By this method, nitrogen was incorporated up to 1–3 at. % for ALD Al2O3 and Ta2O5 films from metal organic precursors. A comparative study with water based ALD showed that the electrical properties were improved. The leakage current of oxide films from NH4OH based ALD had been reduced and, more importantly, the dielectric strength was found to be enhanced by more than two orders of magnitude from a time dependent dielectric breakdown measurement.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.61.Ng Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Jp Dielectric breakdown and space-charge effects
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