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5 Feb 2007

Volume 90, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 063114 (2007); http://dx.doi.org/10.1063/1.2457525 (3 pages)

Thomas J. Mullen, Charan Srinivasan, J. Nathan Hohman, Susan D. Gillmor, Mitchell J. Shuster, Mark W. Horn, Anne M. Andrews, and Paul S. Weiss
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Organic nanochannel field-effect transistor with organic conductive wires

Masatoshi Sakai, Masakazu Nakamura, and Kazuhiro Kudo

Appl. Phys. Lett. 90, 062101 (2007); http://dx.doi.org/10.1063/1.2454286 (3 pages) | Cited 8 times

Online Publication Date: 5 February 2007

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The authors fabricated an organic nanochannel field-effect transistor (FET) that is self-wired with highly conductive organic conductors. The advantages of the transistor are a short channel (approximately 400 nm in length) and spontaneous formation of an active layer of the FET. Further, in principle, the carrier-injection barrier is absent at the interface of the organic metal and organic semiconductor. Thus, the transistor is highly conductive despite the narrow cross section of the channel. The FET characteristics of the nanochannel transistor exhibit the n-channel enhancement mode behavior.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

T. Kita, D. Chiba, Y. Ohno, and H. Ohno

Appl. Phys. Lett. 90, 062102 (2007); http://dx.doi.org/10.1063/1.2437060 (3 pages) | Cited 3 times

Online Publication Date: 5 February 2007

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The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV−V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.
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73.63.Kv Quantum dots
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.La Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Role of valence-band Co 3d states on ferromagnetism in Zn1−xCoxO nanorods

J. W. Chiou, H. M. Tsai, C. W. Pao, K. P. Krishna Kumar, J. H. Chen, D. C. Ling, F. Z. Chien, W. F. Pong, M.-H. Tsai, J. J. Wu, M.-H. Yang, S. C. Liu, I.-H. Hong, C.-H. Chen, H.-J. Lin, et al.

Appl. Phys. Lett. 90, 062103 (2007); http://dx.doi.org/10.1063/1.2432234 (3 pages) | Cited 4 times

Online Publication Date: 5 February 2007

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This work investigates the electronic and ferromagnetic properties of Zn1−xCoxO nanorods using x-ray absorption, x-ray magnetic circular dichroism, and scanning photoelectron microscopy methods. The magnetic moment of Co ions in Zn1−xCoxO nanorods is found greatly reduced relative to that of the Co metal. The intensities of valence-band features near the valence-band maximum/Fermi level (EF) of ferromagnetic nanorods are substantially larger than those of weaker ferromagnetic nanorods, suggesting that the occupation of near-EF valence-band Co 3d states is important in determining the ferromagnetic behavior in Zn1−xCoxO nanorods.
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73.20.At Surface states, band structure, electron density of states
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.50.Tt Fine-particle systems; nanocrystalline materials
75.30.Cr Saturation moments and magnetic susceptibilities
78.70.Dm X-ray absorption spectra

Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO

M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin

Appl. Phys. Lett. 90, 062104 (2007); http://dx.doi.org/10.1063/1.2450642 (3 pages) | Cited 39 times

Online Publication Date: 5 February 2007

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Hall effect, photoluminescence, and Schottky diode measurements were made on the Zn-polar and O-polar faces of undoped, bulk, single crystal, c-axis ZnO wafers. Significant polarity related differences were observed in the PL and Schottky diode characteristics of low carrier concentration, hydrothermally grown wafers. Increased emission from free exciton recombinations and from recombinations between 3.3725 and 3.3750 eV was observed on the Zn-polar face. Conversely, emission between 3.3640 and 3.3680 eV was more intense on the O-polar face. The barrier heights of silver oxide Schottky diodes were approximately 130 meV larger on the Zn-polar face compared to the O-polar face.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.30.+y Surface double layers, Schottky barriers, and work functions
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena

Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor

Soyoun Jung, Taeksoo Ji, and Vijay K. Varadan

Appl. Phys. Lett. 90, 062105 (2007); http://dx.doi.org/10.1063/1.2450646 (3 pages) | Cited 23 times

Online Publication Date: 5 February 2007

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In this letter, a temperature sensor based on an organic thin film transistor is proposed and discussed in terms of its linearity and reliability of the variation in the subthreshold drain current with temperature. The saturation mobility exhibits thermally activated hopping and temperature-deactivated behavior in different temperature ranges, but the saturation current shows very little change compared to the subthreshold current that is linearly varied with temperature from 273 to 453 K. In addition, sensor reliability can be ensured by placing a time delay between consecutive measurements to release the charges trapped in the dielectric/semiconductor interface, the so-called bias-stress effect.
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07.20.Dt Thermometers
85.30.Tv Field effect devices

Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, S. M. Zhang, J. W. Liang, Hui Yang, X. Li, X. Y. Li, and H. M. Gong

Appl. Phys. Lett. 90, 062106 (2007); http://dx.doi.org/10.1063/1.2450658 (3 pages) | Cited 3 times

Online Publication Date: 5 February 2007

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The influence of defects on the responsivity of GaN Schottky barrier ultraviolet photodetectors with n−-GaN/n+-GaN layer structures is investigated. It is found that employing undoped GaN instead of Si-doped GaN as the n−-GaN layer brings about a higher responsivity due to a lower Ga vacancy concentration. On the other hand, the dislocations may increase the recombination of electron-hole pairs and enhance the surface recombination in the photodetectors. Employing undoped GaN and reducing the dislocation density in the n−-GaN layer are necessary to improve the responsivity of Schottky barrier photodetectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions

Enhanced and retarded diffusion of arsenic in silicon by point defect engineering

Ning Kong, Sanjay K. Banerjee, Taras A. Kirichenko, Steven G. H. Anderson, and Mark C. Foisy

Appl. Phys. Lett. 90, 062107 (2007); http://dx.doi.org/10.1063/1.2450663 (3 pages) | Cited 8 times

Online Publication Date: 5 February 2007

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Arsenic enhanced or retarded diffusion is observed by overlapping the dopant region with, respectively, interstitial-rich and vacancy-rich regions produced by Si implants. Enhanced diffusion can be attributed to interstitial-mediated diffusion during postimplant annealing. Two possible mechanisms for diffusion retardation, interstitial-vacancy recombination and dopant clustering, are analyzed in additional experiments. The point defect engineering approach demonstrated in this letter could be applied to fabrication of n-type ultrashallow junctions.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing

Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping

Qingling Hang, Fudong Wang, William E. Buhro, and David B. Janes

Appl. Phys. Lett. 90, 062108 (2007); http://dx.doi.org/10.1063/1.2457249 (3 pages) | Cited 8 times

Online Publication Date: 6 February 2007

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Nanowire field effect transistors have been fabricated using Cd doped InAs nanowires synthesized using a solution-liquid-solid technique. Both n-channel and p-channel characteristics have been observed, which implies that the surface Fermi level is not pinned in the conduction band. The observation of a p channel is attributed to the passivation of surface states by surface ligands introduced during nanowire synthesis and to the effects of heavy acceptor doping. Devices in which the surface ligands are removed by O2 plasma treatment exhibit only n-channel conduction, which would be consistent with surface Fermi level pinning in the conduction band.
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85.30.Tv Field effect devices

Transport characterization of the magnetic anisotropy of (Ga,Mn)As

K. Pappert, S. Hümpfner, J. Wenisch, K. Brunner, C. Gould, G. Schmidt, and L. W. Molenkamp

Appl. Phys. Lett. 90, 062109 (2007); http://dx.doi.org/10.1063/1.2437075 (3 pages) | Cited 24 times

Online Publication Date: 6 February 2007

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The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here the authors discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of the anisotropy. As a demonstration of the sensitivity of the method, they show that these typically reveal the presence of both the [math10] and the [010] uniaxial magnetic anisotropy component in (Ga,Mn)As layers, even when most other techniques reveal only one of these components.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
73.61.Ey III-V semiconductors
75.30.Gw Magnetic anisotropy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

G. Pennington, N. Goldsman, A. Akturk, and A. E. Wickenden

Appl. Phys. Lett. 90, 062110 (2007); http://dx.doi.org/10.1063/1.2437127 (3 pages) | Cited 17 times

Online Publication Date: 6 February 2007

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Theoretical calculations of carrier transport in semiconducting single-walled carbon nanotubes are compared with recent experiments. Considering carrier-phonon scattering, a deformation potential coupling constant of 14 eV is determined. Theory predicts the low-field mobility, conductance, and on resistance of field-effect transistors as a function of nanotube diameter and temperature. When the device is in the on state, the mean free path (Lm-on) varies linearly with tube diameter and inversely with temperature. Intersubband scattering is found to strongly decrease Lm-on when a few subbands are occupied.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Pentacene-based thin film transistors with titanium oxide-polystyrene/polystyrene insulator blends: High mobility on high K dielectric films

Cecile Jung, Ashok Maliakal, Alexander Sidorenko, and Theo Siegrist

Appl. Phys. Lett. 90, 062111 (2007); http://dx.doi.org/10.1063/1.2450660 (3 pages) | Cited 20 times

Online Publication Date: 6 February 2007

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High K titanium oxide-polystyrene TiO2-PS nanocomposite has been blended with PS to generate gate dielectric films with permittivities ranging from 2.5 to 8 in order to investigate permittivity effects on pentacene thin film transistor performance. An order of magnitude increase in saturation mobility is observed for TiO2-PS (K = 8) as compared to PS devices (K = 2.5). Morphological differences for pentacene grown on TiO2-PS/PS dielectrics are thought to be responsible for the observed mobility enhancements. The high performance of pentacene on TiO2-PS devices suggests that high permittivity films are compatible with high mobility devices.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Nitrogen doping of ZnTe and its influence on CdTe/ZnTe interfaces

B. Späth, J. Fritsche, A. Klein, and W. Jaegermann

Appl. Phys. Lett. 90, 062112 (2007); http://dx.doi.org/10.1063/1.2459589 (3 pages) | Cited 6 times

Online Publication Date: 7 February 2007

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The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of ρ = 0.04 Ω cm was found. The valence band offset of the CdTe/ZnTe interface is EVBO = 0.05 eV.
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61.72.uj III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures

Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers

I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. Thomas

Appl. Phys. Lett. 90, 062113 (2007); http://dx.doi.org/10.1063/1.2472173 (3 pages) | Cited 9 times

Online Publication Date: 7 February 2007

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Nitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during irradiation and subsequent annealing was studied. Both Z1,2 and EH6,7 increase in concentration with the N doping as well as with the C/Si ratio. It is demonstrated that the growth conditions play a decisive role for the annihilation of the EH6,7 level and a possible identity of the EH6,7 defect is discussed.
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71.55.Ht Other nonmetals
61.80.Fe Electron and positron radiation effects
61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications

Chin-Lung Cheng, Chien-Wei Liu, and Jin-Tsong Jeng

Appl. Phys. Lett. 90, 062114 (2007); http://dx.doi.org/10.1063/1.2472531 (3 pages) | Cited 5 times

Online Publication Date: 8 February 2007

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A work function (WF) tuning of the TixTayN metal gate ranging from 4.1 to 4.8 eV has been observed using a post-metal-annealing (PMA). The mechanism related to the effective tunable WF can be explained using the creation of the extrinsic states, which is usually associated with the bonding defects that formed at the TixTayN/SiO2 interface. The results display that the electron trapping is generated in the gate dielectric during the PMA treatments. The reduction on equivalent-oxide thickness with increasing the PMA temperature can be attributed to the combination of the densification of the SiO2 and the high-k layer that formed at the TixTayN/SiO2 interface.
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85.30.Tv Field effect devices

Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition

Ryan France, Tao Xu, Papo Chen, R. Chandrasekaran, and T. D. Moustakas

Appl. Phys. Lett. 90, 062115 (2007); http://dx.doi.org/10.1063/1.2458399 (3 pages) | Cited 12 times

Online Publication Date: 8 February 2007

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The authors report on the formation and evaluation of V-based Ohmic contacts to n-AlGaN films in the entire alloy composition. The films were produced by plasma assisted molecular beam epitaxy and doped n-type with Si. The conductivity of the films was determined to vary from 103 to 10−2 (Ω cm)−1 as the AlN mole fraction increases from 0% to 100%. Ohmic contacts were formed by e-beam evaporation of V(15 nm)/Al(80 nm)/V(20 nm)/Au(100 nm). These contacts were rapid thermal annealed in N2 for 30 s at various temperatures. The optimum annealing temperature for this contact scheme to n-GaN is about 650 °C and increases monotonically to about 1000 °C for 95%–100% AlN mole fraction. The specific contact resistivity was found to be about 10−6 Ω cm2 for all films up to 70% AlN mole fraction and then increases to 0.1–1 Ω cm2 for films from 95%–100% AlN mole fraction. These results were accounted for by hypothesizing that vanadium, upon annealing, interacts with the nitride film and forms vanadium nitride, which is consistent with reports that it is a metal with low work function.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing

Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

Liutauras Storasta and Hidekazu Tsuchida

Appl. Phys. Lett. 90, 062116 (2007); http://dx.doi.org/10.1063/1.2472530 (3 pages) | Cited 30 times

Online Publication Date: 8 February 2007

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The authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of Z1/2 and EH6/7 traps from 3×1013 cm−3 to below the detection limit (5×1011 cm−3) was observed by deep level transient spectroscopy in the material 4 μm underneath the implanted layer. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. The authors propose that the implanted layer acts as a source of carbon interstitials which indiffuse during annealing and accelerate annealing out of grown-in defects in the layer underneath the implanted region.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Le Other inorganic semiconductors
71.55.Ht Other nonmetals
61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors

Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films

R. Joseph Kline, Dean M. DeLongchamp, Daniel A. Fischer, Eric K. Lin, Martin Heeney, Iain McCulloch, and Michael F. Toney

Appl. Phys. Lett. 90, 062117 (2007); http://dx.doi.org/10.1063/1.2472533 (3 pages) | Cited 58 times

Online Publication Date: 8 February 2007

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The authors report a significant dependence of the morphology and charge carrier mobility of poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT) films on the substrate surface chemistry upon heating into its liquid crystal phase. In contrast with films on bare silicon oxide surfaces, pBTTT films on oxide functionalized with octyltrichlorosilane exhibit substantial increases in the lateral dimensions of molecular terraces from nanometers to micrometers, increased orientational order, and higher charge carrier mobility. The large-scale crystallinity of this polymer plays an important role in the high carrier mobility observed in devices, but renders it more sensitive to substrate surface chemistry than other conjugated polymers.
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73.61.Ph Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Study on anomalous high p-type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

Jun-Liang Zhao, Xiao-Min Li, André Krtschil, Alois Krost, Wei-Dong Yu, Yi-Wen Zhang, Yan-Fei Gu, and Xiang-Dong Gao

Appl. Phys. Lett. 90, 062118 (2007); http://dx.doi.org/10.1063/1.2437679 (3 pages) | Cited 17 times

Online Publication Date: 9 February 2007

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N–In codoped ZnO films were prepared by ultrasonic spray pyrolysis. Hall-effect measurements indicate that the films on silicon exhibit anomalous high p-type conductivity, while films on insulating substrates show n-type conductivity. Scanning capacitance microscopy was employed to analyze the microconductivity type of ZnO films. The grains of ZnO film on silicon show n-type conductivity and no significant p-type grains were found. The authors further investigated the microstructure of ZnO film and the band structure of the ZnO/Si interface and propose a model of an interface state induced two-dimensional hole gas as the origin of the anomalous high p-type behavior.
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73.61.Ga II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors
73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.55.-a Thin film structure and morphology

Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs Wafers

Jun Xia and Andreas Mandelis

Appl. Phys. Lett. 90, 062119 (2007); http://dx.doi.org/10.1063/1.2437686 (3 pages) | Cited 6 times

Online Publication Date: 9 February 2007

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A purely optical deep level photothermal spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-band-gap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and the very first results are presented.
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07.68.+m Photography, photographic instruments; xerography
71.55.Eq III-V semiconductors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Circular polarization from a nonmagnetic p-i-n resonant tunneling diode

H. B. de Carvalho, M. J. S. P. Brasil, Y. Galvão Gobato, G. E. Marques, H. V. A. Galeti, M. Henini, and G. Hill

Appl. Phys. Lett. 90, 062120 (2007); http://dx.doi.org/10.1063/1.2472522 (3 pages) | Cited 6 times

Online Publication Date: 9 February 2007

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The authors investigate the circular polarization of the electro- and photoluminescence emissions from the quantum well and contact layers of a nonmagnetic GaAs–AlAs p-i-n resonant tunneling diode under an external magnetic field. The contact emission evidences the formation of a spin polarized two-dimensional electron gas at the n-accumulation layer. The quantum well electroluminescence presents a strong σ− degree of polarization, even for null Zeeman splitting energies, and a slight bias dependence. The observed circular polarization is mainly attributed to the spin polarization of the electrons injected into the quantum well from the two-dimensional electron gas.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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