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19 Feb 2007

Volume 90, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 081102 (2007); http://dx.doi.org/10.1063/1.2709532 (3 pages)

Peter D. D. Schwindt, Brad Lindseth, Svenja Knappe, Vishal Shah, John Kitching, and Li-Anne Liew
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Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

J. G. Zhang, X. X. Wang, B. W. Cheng, J. Z. Yu, Q. M. Wang, J. Hau, L. Ding, and W. K. Ge

Appl. Phys. Lett. 90, 081101 (2007); http://dx.doi.org/10.1063/1.2471673 (3 pages) | Cited 2 times

Online Publication Date: 20 February 2007

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Enhanced near-infrared photoluminescence (PL) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. The PL from the sulfur and copper coimplanted silicon peaked between 70 and 100 K and persisted to 260 K. This result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong PL from sulfur-doped silicon comes from S–Cu isoelectronic complexes [ Frens et al., Phys. Rev. B 46, 12316 (1992); Mason et al., ibid. 58, 7007 (1998). ].
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78.55.Ap Elemental semiconductors
61.72.uf Ge and Si

Chip-scale atomic magnetometer with improved sensitivity by use of the Mx technique

Peter D. D. Schwindt, Brad Lindseth, Svenja Knappe, Vishal Shah, John Kitching, and Li-Anne Liew

Appl. Phys. Lett. 90, 081102 (2007); http://dx.doi.org/10.1063/1.2709532 (3 pages) | Cited 18 times

Online Publication Date: 21 February 2007

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The fabrication and performance of a miniature optically pumped atomic magnetometer constructed with microfabricated components are discussed. This device measures the spin precession frequency of 87Rb atoms to determine the magnetic field by use of the Mx technique. It has a demonstrated sensitivity to magnetic fields of 5 pT/Hz1/2 for a bandwidth from 1 to 100 Hz, nearly an order of magnitude improvement over our previous chip-scale magnetometer. The 3 dB bandwidth has also been increased to 1 kHz by reconfiguring the miniature vapor cell heater.
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07.55.Ge Magnetometers for magnetic field measurements

Compact wavelength detection system incorporating a guided-mode resonance filter

Nikhil Ganesh, Alan Xiang, Neill B. Beltran, Dennis W. Dobbs, and Brian T. Cunningham

Appl. Phys. Lett. 90, 081103 (2007); http://dx.doi.org/10.1063/1.2591342 (3 pages) | Cited 12 times

Online Publication Date: 21 February 2007

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The authors demonstrate a compact system for the detection of the peak wavelength value emitted by a light source. The system is composed of only two components, a graded-wavelength guided-mode resonance filter placed before a charge-coupled device sensor array. The filter provides a spatially resolved transmission minimum, the position of which is controlled by the wavelength of the incoming light. The sensor array collects the spatially resolved transmitted intensity and the wavelength is determined by recording the position of the transmission minimum along its length. Using this technique, wavelength changes as small as 0.011 nm can be detected.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Pw Imaging detectors and sensors

Optically pumped GaN/AlGaN separate-confinement heterostructure laser grown along the (11math0) nonpolar direction

H. Teisseyre, C. Skierbiszewski, A. Khachapuridze, A. Feduniewicz-Żmuda, M. Siekacz, B. £ucznik, G. Kamler, M. Kryśko, T. Suski, P. Perlin, I. Grzegory, and S. Porowski

Appl. Phys. Lett. 90, 081104 (2007); http://dx.doi.org/10.1063/1.2695825 (3 pages) | Cited 5 times

Online Publication Date: 21 February 2007

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This letter concerns experiments on optically pumped GaN/AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The structures were grown along the (11math0) nonpolar crystallographic direction on a bulk GaN substrate. Different widths of GaN quantum wells were applied in the studied structures. Laser action is clearly demonstrated by the spontaneous emission saturation, abrupt line narrowing, and strong TE polarization of output light. A lasing threshold was reached at an excitation power density of 260 kW/cm2 for a 700-μm-long cavity at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition

Ultrafast carrier dynamics of Si quantum dots embedded in SiN matrix

Lap Van Dao, Jeff Davis, Peter Hannaford, Young-Hyun Cho, Martin A. Green, and Eun-Chel Cho

Appl. Phys. Lett. 90, 081105 (2007); http://dx.doi.org/10.1063/1.2695977 (3 pages) | Cited 6 times

Online Publication Date: 21 February 2007

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Femtosecond spectrally resolved two-color three-pulse nonlinear spectroscopy is used to study the dynamics and coherence properties of excited carriers in Si quantum dot structures embedded in silicon nitride. A very short dephasing time of <180 fs at room temperature is observed. Ultrashort population relaxation times of ∼ 400 fs and 6–10 ps are measured and discussed in the context of the different contributions from transverse optical and transverse acoustic phonon-assisted transitions.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.63.Kv Quantum dots
78.47.-p Spectroscopy of solid state dynamics
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Color-tunable electroluminescence from white organic light-emitting devices through coupled surface plasmons

Jing Feng, Takayuki Okamoto, Janne Simonen, and Satoshi Kawata

Appl. Phys. Lett. 90, 081106 (2007); http://dx.doi.org/10.1063/1.2645149 (3 pages) | Cited 7 times

Online Publication Date: 22 February 2007

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The authors report color-tunable electroluminescence from white organic light-emitting devices (WOLEDs) through coupling of surface plasmons in a metal/insulator/metal (MIM) structure. The MIM structure was fabricated by depositing Ag and 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) films on the Ag cathode of a WOLED. The transmission wavelength through the MIM structure depends on the thickness of the middle BCP layer and can be tuned in the visible range. Therefore, the broadband emission from WOLEDs is selectively transmitted, and color-tunable EL emission was obtained. Blue, green, and red light emissions were observed when the BCP layer thicknesses are 70, 100, and 130 nm, respectively.
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85.60.Jb Light-emitting devices

Efficient photovoltaic cells with wide photosensitization range fabricated from rhenium benzathiazole complexes

Hei Ling Wong, Chris S. K. Mak, Wai Kin Chan, and Aleksandra B. Djurišić

Appl. Phys. Lett. 90, 081107 (2007); http://dx.doi.org/10.1063/1.2696843 (3 pages) | Cited 10 times

Online Publication Date: 22 February 2007

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Bulk heterojunction ITO/CuPc/sensitizer:C60/C60/Al (ITO denotes indium tin oxide; CuPc denotes copper phthalocyanine) photovoltaic cells were fabricated by using rhenium(I) complexes with benzathiazole ligands as the sensitizers. The complexes enhance the photosensitivity in the region of 450–550 nm in which CuPc and C60 have little absorption. The devices exhibited high fill factors in excess of 0.6, and the power conversion efficiency of the best device 1.72%. A device based on pure CuPc:C60 mixed layer was fabricated for comparison. The external quantum efficiency of the devices remained higher than 10% in the entire visible region, which clearly demonstrated the importance of rhenium complexes as sensitizers.
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84.60.Jt Photoelectric conversion

Control of lasing in fully chaotic open microcavities by tailoring the shape factor

W. Fang, H. Cao, and G. S. Solomon

Appl. Phys. Lett. 90, 081108 (2007); http://dx.doi.org/10.1063/1.2535692 (3 pages) | Cited 18 times

Online Publication Date: 23 February 2007

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The authors demonstrate experimentally that lasing in a semiconductor microstadium can be optimized by controlling its shape. Under spatially uniform optical pumping, the first lasing mode in a GaAs microstadium with large major-to-minor-axis ratio usually corresponds to a high-quality scar mode consisting of several unstable periodic orbits. Interference of waves propagating along the constituent orbits may minimize light leakage at particular major-to-minor-axis ratio. By making stadium of the optimum shape, the authors are able to maximize the mode quality factor and align the mode frequency to the peak of the gain spectrum, thus minimizing the lasing threshold.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Selective trace gas detection of complex molecules with a continuous wave optical parametric oscillator using a planar jet expansion

Anthony K. Y. Ngai, Stefan T. Persijn, Frans J. M. Harren, Harald Verbraak, and Harold Linnartz

Appl. Phys. Lett. 90, 081109 (2007); http://dx.doi.org/10.1063/1.2709515 (3 pages) | Cited 7 times

Online Publication Date: 23 February 2007

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The authors present a trace gas detection method for complex molecules using continuous cavity ring-down spectroscopy in combination with a continuous wave optical parametric oscillator (tunability wavelength: 2.8–4.8 μm; power: 1 W) sampling a supersonic planar jet expansion (nozzle dimension: 3 cm×80 μm). The improved molecular selectivity allows simultaneous detection of larger numbers of complex molecules. With a total optical path length of 180 m in the planar jet, a detection limit for methanol in an air expansion was determined at 70 ppbv, corresponding to a minimal detectable absorption of 2.2×10−8 cm−1 (over 90 s).
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82.80.-d Chemical analysis and related physical methods of analysis
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.65.Yj Optical parametric oscillators and amplifiers
33.20.Ea Infrared spectra

Observation of whispering gallery modes in nanocrystalline diamond microdisks

C. F. Wang, Y-S. Choi, J. C. Lee, E. L. Hu, J. Yang, and J. E. Butler

Appl. Phys. Lett. 90, 081110 (2007); http://dx.doi.org/10.1063/1.2709626 (3 pages) | Cited 38 times

Online Publication Date: 23 February 2007

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Nanocrystalline diamond microdisks have been fabricated and characterized. The process conditions were chosen to ensure smooth and vertical sidewalls. Focused ion beam milling was used to create ultrasmooth sidewalls. Whispering gallery modes were observed near the nitrogen-vacancy center emission wavelength (637 nm) by photoluminescence and near ∼ 1550 nm by evanescent fiber coupling. The cavity quality factors (Q) are about 100 in both experiments. The Q’s for these disks were calculated to be as high as 105 by three-dimensional finite-difference time-domain simulations. The authors believe the Q’s to be limited by absorption and scattering within the nanocrystalline cavity material.
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42.79.-e Optical elements, devices, and systems
42.70.-a Optical materials
61.72.J- Point defects and defect clusters

Electrical spin injection into p-doped quantum dots through a tunnel barrier

L. Lombez, P. Renucci, P. F. Braun, H. Carrère, X. Marie, T. Amand, B. Urbaszek, J. L. Gauffier, P. Gallo, T. Camps, A. Arnoult, C. Fontaine, C. Deranlot, R. Mattana, H. Jaffrès, et al.

Appl. Phys. Lett. 90, 081111 (2007); http://dx.doi.org/10.1063/1.2709889 (3 pages) | Cited 6 times

Online Publication Date: 23 February 2007

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The authors have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a p-i-n GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization-resolved photoluminescence). The measured electroluminescence circular polarization is about 15% at low temperature in a 2 T magnetic field, proving an efficient electrical spin injection yield in the quantum dots. Moreover, this electroluminescence circular polarization is stable up to 70 K.
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85.30.Kk Junction diodes
85.60.Jb Light-emitting devices
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Wavelength switching transition in quantum dot lasers

Hsing-Yeh Wang, Hsu-Chieh Cheng, Sheng-Di Lin, and Chien-Ping Lee

Appl. Phys. Lett. 90, 081112 (2007); http://dx.doi.org/10.1063/1.2709987 (2 pages) | Cited 1 time

Online Publication Date: 23 February 2007

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Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100 nm was achieved. With a constant total current, either ground state lasing ( ∼ 1.3 μm), excited state lasing ( ∼ 1.2 μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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Photoionization in negative streamers: Fast computations and two propagation modes

Alejandro Luque, Ute Ebert, Carolynne Montijn, and Willem Hundsdorfer

Appl. Phys. Lett. 90, 081501 (2007); http://dx.doi.org/10.1063/1.2435934 (3 pages) | Cited 39 times

Online Publication Date: 20 February 2007

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Streamer discharges play a central role in electric breakdown of matter in pulsed electric fields, both in nature and in technology. Reliable and fast computations of the minimal model for negative streamers in simple gases such as nitrogen have recently been developed. However, photoionization was not included; it is important in air and poses a major numerical challenge. The authors here introduce a fast and reliable method to include photoionization into our numerical scheme with adaptive grids, and they discuss its importance for negative streamers. In particular, they identify different propagation regimes where photoionization does or does not play a role.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.25.Jm Ionization of plasmas
02.60.Cb Numerical simulation; solution of equations

Scale-length optimizing of short pulse Cu Kα laser-plasma sources

F. Y. Khattak, E. Garcia Saiz, T. Dzelzainis, D. Riley, and Z. Zhai

Appl. Phys. Lett. 90, 081502 (2007); http://dx.doi.org/10.1063/1.2645310 (3 pages) | Cited 7 times

Online Publication Date: 20 February 2007

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The authors present experimental results showing how the use of a high contrast femtosecond laser system allows better optimization of Kα emission from a Cu target. The shorter scale-length preformed plasma is better optimized for resonance absorption of the laser light when the laser is moved away from best focus. The experimental data show a central peak of Kα emission at tight focus with strong secondary peaks at large offset. The use of these secondary peaks results in a much reduced hard x-ray background and should lead to shorter Kα pulses than at tight focus.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Extraction of small-diameter beams from single-component plasmas

J. R. Danielson, T. R. Weber, and C. M. Surko

Appl. Phys. Lett. 90, 081503 (2007); http://dx.doi.org/10.1063/1.2709522 (3 pages) | Cited 8 times

Online Publication Date: 21 February 2007

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A nondestructive technique is described to extract small-diameter beams from single-component plasmas confined in a Penning-Malmberg trap following radial compression using a rotating electric field. Pulsed beams with Gaussian radial profiles and diameters as small as 50 μm are extracted from electron plasmas initially 2 mm in diameter. A simple theory for the beam diameter predicts 4λD (full width to 1/e), where λD is the Debye length, in good agreement with experimental measurements on electron plasmas. Applications and extensions of this technique to create bright, finely focused beams of positrons and other scarce particles are discussed.
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29.25.Bx Electron sources
07.77.Ka Charged-particle beam sources and detectors
52.55.Lf Field-reversed configurations, rotamaks, astrons, ion rings, magnetized target fusion, and cusps
52.27.Aj Single-component, electron-positive-ion plasmas
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Strength-improved Zr-based metallic glass/porous tungsten phase composite by hydrostatic extrusion

Y. F. Xue, H. N. Cai, L. Wang, F. C. Wang, and H. F. Zhang

Appl. Phys. Lett. 90, 081901 (2007); http://dx.doi.org/10.1063/1.2456618 (3 pages) | Cited 6 times

Online Publication Date: 20 February 2007

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Hydrostatic extrusion, as a quite rarely applied technique, is used for the deformation of the Zr-based metallic glass/porous tungsten phase composite prepared by pressure infiltration. The fracture strength increases from 1852 MPa for the as-cast composite to 2112 MPa for the as-extruded composite. An apparent work hardening behavior was also observed in the as-extruded composite. The improved mechanical properties of the as-extruded composite are proposed to contribute to the stable interface between the metallic glass phase and the tungsten phase and the high dislocation density of the tungsten phase.
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81.05.Pj Glass-based composites, vitroceramics
81.10.Fq Growth from melts; zone melting and refining
81.40.Lm Deformation, plasticity, and creep
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.F- Deformation and plasticity

Experimental and theoretical studies of surface phonon polariton of AlN thin film

S. S. Ng, Z. Hassan, and H. Abu Hassan

Appl. Phys. Lett. 90, 081902 (2007); http://dx.doi.org/10.1063/1.2645970 (3 pages) | Cited 10 times

Online Publication Date: 20 February 2007

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The surface phonon polariton (SPP) mode of aluminum nitride (AlN) thin film grown on sapphire substrate is investigated experimentally and theoretically. For the experimental study, p-polarized infrared attenuated total reflection measurements are performed. A strong absorption dip which corresponds to the SPP mode of AlN thin film is clearly observed at 839.0 cm−1. For the theoretical study, the surface-polariton dispersion curve of the AlN thin film has been simulated. Finally, the experimental and theoretical values of the SPP mode are compared. The results revealed that the uncertainty between the theoretical and experimental SPP values is less than 2%.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
68.35.Ja Surface and interface dynamics and vibrations
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Polymorphism in pentacene thin films on SiO2 substrate

Toshiyuki Kakudate, Noriyuki Yoshimoto, and Yoshio Saito

Appl. Phys. Lett. 90, 081903 (2007); http://dx.doi.org/10.1063/1.2709516 (3 pages) | Cited 28 times

Online Publication Date: 21 February 2007

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The polymorphism of pentacene thin films on SiO2 substrate was investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were obtained from vacuum deposited ultrathin films. By comparing the in-plane structures with thicker films, it was elucidated that ultrathin films have the same lattice constants as that of films of 100 nm thick. Consistency of determined interplanar d11 spacings of the two polymorphs suggests the epitaxial growth that bulk phase grows onto thin-film phase. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed in terms of equilibrium shapes during nucleation process.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

White light emission from Eu3+ in CaIn2O4 host lattices

Xiaoming Liu, Cuikun Lin, and Jun Lin

Appl. Phys. Lett. 90, 081904 (2007); http://dx.doi.org/10.1063/1.2539632 (3 pages) | Cited 50 times

Online Publication Date: 21 February 2007

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CaIn2O4:xEu3+ (x = 0.5%,1.0%,1.5%) phosphors were prepared by the Pechini sol-gel process [ U.S. Patent No. 3,330,697 (1967) ] and characterized by x-ray diffraction and photoluminescence and cathodoluminescence spectra as well as lifetimes. Under the excitation of 397 nm ultraviolet light and low voltage electron beams, these phosphors show the emission lines of Eu3+ corresponding to 5D0,1,2,3-7FJ (J = 0,1,2,3,4) transitions from 400 to 700 nm (whole visible spectral region) with comparable intensity, resulting in a white light emission with a quantum efficiency near 10%. The luminescence mechanism for Eu3+ in CaIn2O4 has been elucidated.
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78.55.Hx Other solid inorganic materials

Electrohydrodynamic printing of silver nanoparticles by using a focused nanocolloid jet

Dae-Young Lee, Yun-Soo Shin, Sung-Eun Park, Tae-U Yu, and Jungho Hwang

Appl. Phys. Lett. 90, 081905 (2007); http://dx.doi.org/10.1063/1.2645078 (3 pages) | Cited 24 times

Online Publication Date: 21 February 2007

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As a direct write technology, the electrohydrodynamic printing of silver nanoparticles by using a focused nanocolloid jet is introduced. In this letter, two categorized types of examples of two-dimensional patterning were printed by using the electrohydrodynamic printing method. A spiral-type inductor was printed to demonstrate the feasibility of the electrohydrodynamic printing as a fabrication process. The printed spiral inductor produced 9.45 μH and exhibited approximately five times larger resistivity (9.5 μΩ cm) than that of bulk silver after the sintering process. Then, complex geometries having square- and round-shape patterns were also printed.
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81.07.Wx Nanopowders
81.05.Bx Metals, semimetals, and alloys
81.16.Rf Micro- and nanoscale pattern formation
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
73.63.-b Electronic transport in nanoscale materials and structures
82.70.Dd Colloids

Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2/SiC structures

G. V. Soares, I. J. R. Baumvol, C. Radtke, and F. C. Stedile

Appl. Phys. Lett. 90, 081906 (2007); http://dx.doi.org/10.1063/1.2645341 (3 pages) | Cited 4 times

Online Publication Date: 21 February 2007

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Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen (deuterium) is found near the SiO2 film surface or close to the SiO2/SiC interface depending on the oxidation/D2-annealing sequence, being much more strongly bound to SiC-based structures than to their Si counterparts. C compounds near the interface seem to play a significant role on the physicochemical and consequently on the electrical characteristics of the D passivated SiO2/SiC interface.
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82.30.-b Specific chemical reactions; reaction mechanisms
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

Fabrication of TiO2 nanocrystallized glass

Hirokazu Masai, Takumi Fujiwara, Hiroshi Mori, and Takayuki Komatsu

Appl. Phys. Lett. 90, 081907 (2007); http://dx.doi.org/10.1063/1.2679044 (3 pages) | Cited 9 times

Online Publication Date: 21 February 2007

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Nanocrystallization of rutile and anatase was observed in a CaO–B2O3–Bi2O3–Al2O3–TiO2 crystallized glass. The color of the present crystallized glass was changed by the heat-treatment temperature, and x-ray diffraction (XRD) patterns of the crystallized glass show that the apparent color change is correlated with the formation of titania nanocrystallites. The particle size of crystallites observed in the transmission electron microscope image is comparable to that measured by XRD pattern. In addition, a large change of refractive index between the rutile particles and glass matrix, 0.8 or larger, was obtained. The present titania crystallized glass will be not only a photocatalytic material but also a promising candidate for random lasing devices.
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81.05.Kf Glasses (including metallic glasses)
64.70.K- Solid-solid transitions
61.43.Fs Glasses
81.40.Gh Other heat and thermomechanical treatments
68.37.Lp Transmission electron microscopy (TEM)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Temperature dependence of the near-wall oscillation of microcantilevers submerged in liquid environment

S. Kim and K. D. Kihm

Appl. Phys. Lett. 90, 081908 (2007); http://dx.doi.org/10.1063/1.2680052 (3 pages) | Cited 3 times

Online Publication Date: 21 February 2007

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This letter presents theoretical and experimental investigations of the temperature effects (30–70 °C) on the frequency responses of three different microcantilevers [thickness (h)/length (L)2 = 34.7,141,275 m−1] near a solid surface in aqueous liquid. The peak resonance response frequency shifts in the near-wall region are dominated by the temperature effects associated with the pronounced viscous dissipative effect of liquid. A relatively short and thick cantilever with a large value of h/L2 demonstrates higher thermal sensitivity Δf/ΔT in the near-wall region.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Polarized Raman scattering of Ge nanocrystals embedded in a-SiO2

Y. M. Yang, L. W. Yang, and Paul K. Chu

Appl. Phys. Lett. 90, 081909 (2007); http://dx.doi.org/10.1063/1.2643349 (3 pages) | Cited 9 times

Online Publication Date: 22 February 2007

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Ge nanocrystals randomly dispersed in amorphous silica films were prepared by magnetron cosputtering and postannealing to investigate the polarization characteristics of Raman scattering from the Ge nanocrystals. Two acoustic vibrational modes observed in the low-frequency Raman spectra were shown by theoretical calculation based on the isotropic continuum elasticity theory to be the torsional modes activated by elastic anisotropy and the nonspherical shape of the Ge nanocrystals. Enhanced depolarized scattering was also observed from the optical phonons of the Ge nanocrystals.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Am Elemental semiconductors and insulators
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
81.40.Gh Other heat and thermomechanical treatments
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Complete polarization analysis of extreme ultraviolet radiation with a broadband phase retarder and analyzer

Zhanshan Wang, Hongchang Wang, Jingtao Zhu, Zhong Zhang, Fengli Wang, Yao Xu, Shumin Zhang, Wenjuan Wu, Lingyan Chen, Alan G. Michette, Slawka J. Pfauntsch, A. Keith Powell, Franz Schäfers, Andreas Gaupp, Mingqi Cui, et al.

Appl. Phys. Lett. 90, 081910 (2007); http://dx.doi.org/10.1063/1.2678973 (3 pages) | Cited 3 times

Online Publication Date: 22 February 2007

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The polarization state of the BESSY UE56/1-PGM beamline radiation in the broad wavelength range of 12.7–15.5 nm was measured using a molybdenum/silicon transmission phase retarder and a reflection analyzer with aperiodic multilayer interference structures, which can broaden the spectral response of these optical elements. The characteristics of the circular polarized undulator radiation, as well as the polarization properties of the two polarizing elements, were determined by a complete polarization analysis. Furthermore, the polarization of the radiation as a function of the undulator shift setting was also measured at the wavelength of 13.1 nm by use of the broadband phase retarder-analyzer pair.
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07.60.Fs Polarimeters and ellipsometers
42.79.Ci Filters, zone plates, and polarizers
29.27.Hj Polarized beams
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