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26 Feb 2007

Volume 90, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 90, 093127 (2007); http://dx.doi.org/10.1063/1.2710743 (3 pages)

Y. Q. Li, J. X. Tang, H. Wang, J. A. Zapien, Y. Y. Shan, and S. T. Lee
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Optimization of high responsivity waveguide photodiode with a thin absorption layer

Jeong-Woo Park, Hyun-Sung Ko, Eun-Deok Sim, and Yong-Soon Baek

Appl. Phys. Lett. 90, 091101 (2007); http://dx.doi.org/10.1063/1.2709944 (3 pages) | Cited 1 time

Online Publication Date: 27 February 2007

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The optimization of a waveguide photodiode (WGPD) having a thin absorption layer is discussed. With an absorption layer thickness of less than 0.1 μm, responsivity of 1.09 A/W was achieved for lensed-fiber coupling. For flat-ended fiber coupling, responsivity of 0.93 A/W was achieved. An absorption layer thickness of more than 100 Å is required for high responsivity and low polarization dependency. A formula for frequency response in a WGPD with a thin absorption layer is also obtained. This formula gives the optimized WGPD structure for high speed operation with high responsivity.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.81.Qb Fiber waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Enhanced light outcoupling in a thin film by texturing meshed surfaces

Yu-Hung Cheng, Jia-Lin Wu, Chien-Hong Cheng, Kao-Chih Syao, and Ming-Chang M. Lee

Appl. Phys. Lett. 90, 091102 (2007); http://dx.doi.org/10.1063/1.2709920 (3 pages) | Cited 15 times

Online Publication Date: 27 February 2007

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The authors demonstrate a method of texturing a meshed surface on a poly(dimethyl siloxane) (PDMS) film for improving light extraction. This meshed surface is fabricated through a casting process by using a self-organized porous film as a template. Experimental results show that the light outcoupling efficiency increases on the meshed surface of a freestanding PDMS film with large incident angles. The external quantum efficiency of an organic light-emitting diode with the textured PDMS film was also demonstrated to have an enhancement of 46%.
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42.79.Wc Optical coatings
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
68.47.Mn Polymer surfaces
85.60.Jb Light-emitting devices

Pretilt angle effects on critical voltage and dynamic response of pi cell

Yubao Sun, Hongmei Ma, Zaidong Li, Zhidong Zhang, and Ronghua Guan

Appl. Phys. Lett. 90, 091103 (2007); http://dx.doi.org/10.1063/1.2709994 (3 pages) | Cited 16 times

Online Publication Date: 27 February 2007

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The critical voltage with an arbitrary pretilt angle is given analytically which is consistent with the numerical results [ Acosta et al., Liq. Cryst. 27, 977 (2000) ]. The author’s results show that the critical voltage is dependent on the parameters of liquid crystal and pretilt angle but is independent of the cell gap. By numerical simulation the authors find that the on time of pi cell decreases with the increasing pretilt at the same voltage, and the off time of the cell driven by the undershoot method is much faster than that of the normal driven method for the cell with nonzero critical voltage.
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42.70.Df Liquid crystals

Evidence of cascaded emission in a dual-wavelength quantum cascade laser

Kale J. Franz, Daniel Wasserman, Anthony J. Hoffman, David C. Jangraw, Kuen-Ting Shiu, Stephen R. Forrest, and Claire Gmachl

Appl. Phys. Lett. 90, 091104 (2007); http://dx.doi.org/10.1063/1.2709970 (3 pages) | Cited 5 times

Online Publication Date: 28 February 2007

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This letter reports on a quantum cascade laser that exhibits simultaneous dual-wavelength emission from two consecutive optical transitions in each active region. These “cascaded” transitions—a second-excited state to first-excited state and a first-excited state to ground state—yield light at ∼ 9.5 and ∼ 8.2 μm, respectively, in good agreement with simulations. The two lasing wavelengths have similar thresholds at the leading edge of a current pulse.
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42.55.Px Semiconductor lasers; laser diodes

High Q, one-dimensional terahertz photonic waveguides

A. L. Bingham and D. Grischkowsky

Appl. Phys. Lett. 90, 091105 (2007); http://dx.doi.org/10.1063/1.2710002 (3 pages) | Cited 19 times

Online Publication Date: 28 February 2007

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A one-dimensional (1D) photonic metal parallel plate waveguide is presented in the spectral range of 0.5–3 THz that has high throughput and stop bands with up to the experimental limit of 40 dB of dynamic range. By incorporating a defect into the periodic bottom plate of the waveguide, a transmission resonance is generated in the first stop band with a Q value of 120 and a dynamic range of over 17 dB. The 1D geometry allows the utilization of the mode matching technique to analytically calculate the transmission of the photonic waveguide.
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42.79.Gn Optical waveguides and couplers
84.40.Az Waveguides, transmission lines, striplines

Destruction of amplified spontaneous emission via chemical doping at low-work-function metal/conjugated polymer interfaces

Bertrand Tremolet de Villers and Benjamin J. Schwartz

Appl. Phys. Lett. 90, 091106 (2007); http://dx.doi.org/10.1063/1.2710188 (3 pages) | Cited 3 times

Online Publication Date: 28 February 2007

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The authors investigate how the use of different metal electrodes affects the ability of poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) films to undergo amplified spontaneous emission (ASE). High-work-function metals such as Ag or Au have little effect on the ASE threshold, but low-work-function metals such as Ca or Al completely shut off ASE. ASE is restored when a thin spacer layer, such as a few nanometers of polystyrene or oxidized Ca, is introduced between the MEH-PPV film and the Ca or Al electrode. This suggests that low-work-function metals chemically dope the polymer, creating polarons that destroy ASE not only by lowering the gain through emission quenching but primarily by increasing the loss via optical absorption. Thus, the exponential sensitivity of ASE to optical losses provides a spectroscopic probe of conjugated polymer/metal interfaces.
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78.66.Qn Polymers; organic compounds
61.72.up Other materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.20.Rv Polymers and organic compounds

Emission of hybrid organic-inorganic exciton/plasmon mixed states

C. Symonds, J. Bellessa, J. C. Plenet, A. Bréhier, R. Parashkov, J. S. Lauret, and E. Deleporte

Appl. Phys. Lett. 90, 091107 (2007); http://dx.doi.org/10.1063/1.2695682 (3 pages) | Cited 8 times

Online Publication Date: 28 February 2007

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In this letter the authors experimentally demonstrate the strong coupling regime at room temperature between a surface plasmon and an exciton from an auto-organized quantum well. The sample is formed by a two dimensional layered perovskite-type semiconductor: s(C6H5C2H4–NH3)PbI4, spin coated onto a silver film. The dispersion lines resulting from reflectometry experiments performed at room temperature in the Kretschmann geometry present an anticrossing with a Rabi splitting of 167 meV. The emission of the low energy polariton is presented.
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78.67.De Quantum wells
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
81.07.Pr Organic-inorganic hybrid nanostructures

Temperature-dependent current injection and lasing in T-shaped quantum-wire laser diodes with perpendicular p- and n-doping layers

Makoto Okano, Shu-man Liu, Toshiyuki Ihara, Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Kenneth West, and Oana Malis

Appl. Phys. Lett. 90, 091108 (2007); http://dx.doi.org/10.1063/1.2709521 (3 pages) | Cited 6 times

Online Publication Date: 1 March 2007

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The authors measured the temperature dependence of the lasing properties of current-injection T-shaped GaAs/AlGaAs quantum-wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire lasers with high-reflectivity coatings on both cleaved facets achieved continuous-wave single-mode operation between 5 and 110 K. The lowest threshold current was 2.1 mA at 100 K. The temperature dependences of differential quantum efficiency and threshold current were attributed mainly to that of current-injection efficiency.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement

G. Walter, A. James, N. Holonyak, Jr., and M. Feng

Appl. Phys. Lett. 90, 091109 (2007); http://dx.doi.org/10.1063/1.2709964 (3 pages) | Cited 4 times

Online Publication Date: 1 March 2007

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A quantum well (QW) transistor laser with the capability of high current density, a collector current ensuring minimal operational change (beyond laser threshold) in base QW carrier population, a favorable long narrow emitter laser geometry, and built-in base-collector Franz-Keldysh absorption (with IE+IB+IC = 0), is measured for chirp-related behavior. A relatively low transistor laser linewidth enhancement factor αe ∼ 0.7 is obtained despite the resolution limitations of the measurement apparatus.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Very narrow-band ultraviolet photodetection based on strained M-plane GaN films

Sandip Ghosh, C. Rivera, J. L. Pau, E. Muñoz, O. Brandt, and H. T. Grahn

Appl. Phys. Lett. 90, 091110 (2007); http://dx.doi.org/10.1063/1.2710769 (3 pages) | Cited 8 times

Online Publication Date: 1 March 2007

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The authors demonstrate a photodetection configuration where the responsivity in the ultraviolet spectral region is limited to a few nanometers, representing high-quality-factor, narrow-band detection together with polarization sensitivity. Both features are obtained by utilizing a polarization-sensitive photodectector in combination with a polarization filter made from two identical M-plane GaN films on γ-LiAlO2 (100) substrate. The optical band gap of these films depends on the direction of the in-plane polarization vector of the incident light beam with respect to the c axis. Electronic-band-structure calculations show that the naturally present anisotropic in-plane strain in these films is the crucial parameter to achieve both a high responsivity and a high polarization contrast.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Ci Filters, zone plates, and polarizers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Continuous-wave terahertz imaging with a hybrid system

Torsten Löffler, Thilo May, Christian am Weg, Ali Alcin, Bernd Hils, and Hartmut G. Roskos

Appl. Phys. Lett. 90, 091111 (2007); http://dx.doi.org/10.1063/1.2711183 (3 pages) | Cited 34 times

Online Publication Date: 1 March 2007

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The authors have developed a hybrid system for coherent raster-scan imaging at 0.6 THz. It combines a high-power electronic source (a multiplied Gunn emitter) with a femtosecond Ti:sapphire laser in order to achieve a high dynamic range via electro-optic detection. The single-scan dynamic range of 60 db at a lock-in time constant of 10 ms is sufficient to permit detection of scattered terahertz radiation in addition to specularly reflected/transmitted light. Active synchronization of the electronic source and the laser is not needed because of the remarkably low jitter between the two radiation sources.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.Gw Other integrated-optical elements and systems
42.79.Pw Imaging detectors and sensors

Self-diffracting effects in hybrid materials

Mónica Trejo-Durán, J. A. Andrade-Lucio, Antonio Martínez-Richa, Ricardo Vera-Graziano, and Víctor M. Castaño

Appl. Phys. Lett. 90, 091112 (2007); http://dx.doi.org/10.1063/1.2710786 (2 pages) | Cited 3 times

Online Publication Date: 1 March 2007

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The authors experimentally demonstrate self-diffraction effect in a hybrid material. Patterns at different light intensity levels were obtained. A dependence of the number of diffraction rings with the intensity of laser is observed.
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42.65.-k Nonlinear optics
42.70.Mp Nonlinear optical crystals

Terahertz microcavity lasers with subwavelength mode volumes and thresholds in the milliampere range

Y. Chassagneux, J. Palomo, R. Colombelli, S. Dhillon, C. Sirtori, H. Beere, J. Alton, and D. Ritchie

Appl. Phys. Lett. 90, 091113 (2007); http://dx.doi.org/10.1063/1.2710754 (3 pages) | Cited 19 times

Online Publication Date: 1 March 2007

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The authors demonstrate terahertz microcavity lasers with ultralow current thresholds (Ith ≈ 4 mA) and with reduced mode volumes of ≈ 0.7(λeffective)3, i.e., less than one cubic wavelength. A double metal waveguide with reduced active core thickness (5.82 μm) is used to achieve confinement in the vertical direction, without compromising the laser performances. Confinement in the longitudinal direction is obtained using microdisk resonators. The guiding properties of surface plasmons are exploited to guide the mode with the metal contact. This makes the use of a resonator with vertical and smooth sidewalls unnecessary. The emission wavelength is λ ≈ 114 μm. The devices lase up to 70 K in pulsed mode, and they achieve continuous-wave operation up to 60 K.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Low-threshold and high efficiency lasing upon band-edge excitation in a cholesteric liquid crystal

Yuko Matsuhisa, Yuhua Huang, Ying Zhou, Shin-Tson Wu, Ryotaro Ozaki, Yuuki Takao, Akihiko Fujii, and Masanori Ozaki

Appl. Phys. Lett. 90, 091114 (2007); http://dx.doi.org/10.1063/1.2710777 (3 pages) | Cited 22 times

Online Publication Date: 1 March 2007

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A low threshold and high efficiency laser based on dye-doped cholesteric liquid crystals (CLCs) is demonstrated using an input excitation with the same handedness of circular polarization as the helical structure of the sample at the shorter wavelength band edge of the reflection band. The responsible mechanism originates from the dramatic increase of the optical density of state (DOS) at the band edges. The calculated DOS of the CLC system confirms the authors’ experimental results.
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42.55.-f Lasers
42.70.Df Liquid crystals
42.70.Hj Laser materials
61.30.-v Liquid crystals

Tolerance of microfabricated wedge for the generation of geometrical stable optical vortex at focal vicinity

B. P. S. Ahluwalia, X.-C. Yuan, J. Bu, K. J. Moh, S. H. Tao, R. E. Burge, H. B. Niu, and X. Peng

Appl. Phys. Lett. 90, 091115 (2007); http://dx.doi.org/10.1063/1.2539704 (3 pages) | Cited 1 time

Online Publication Date: 2 March 2007

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The geometrical stability of the optical vortices generated by an optical wedge at the focal vicinity is investigated. It is found that an optical wedge generates an optical vortex beam in the free-space propagation for a wide range of imparted phase shift, however, it possesses a smaller tolerance zone of induced phase shift within which it generates structurally stable optical vortex at focal vicinity. Furthermore, the wedge was employed for the generation of the femtosecond optical vortex beam free from appreciable spatial chirp.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.-e Optical elements, devices, and systems
42.15.-i Geometrical optics

Omnidirectional light emission via surface plasmon polaritons

John S. Q. Liu and Mark L. Brongersma

Appl. Phys. Lett. 90, 091116 (2007); http://dx.doi.org/10.1063/1.2437053 (3 pages) | Cited 13 times

Online Publication Date: 2 March 2007

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The simulations and experiments on light emitters within a planar, metal/insulator/metal cavity demonstrate an omnidirectional resonance. This is a resonance for which the maximum decay rate enhancement in the cavity occurs at a well-defined wavelength independent of emission angle. It is shown numerically that the resonance occurs when the cavity thickness is a quarter of the surface plasmon wavelength. Experiments on a gold/blue-emitting polymer/gold cavity support this. Further simulations show that low loss omnidirectional cavities have an emission intensity that is largely independent of angle, which may find application for solid state light sources that require a broad emission cone.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.70.Jk Polymers and organics

Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance

Jia-Chuan Lin, Wei-Chih Tsai, and Wei-Lun Chen

Appl. Phys. Lett. 90, 091117 (2007); http://dx.doi.org/10.1063/1.2709632 (3 pages) | Cited 3 times

Online Publication Date: 2 March 2007

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The light-emission and current-voltage properties of n-type nanoporous silicon (n-NPS) with a hole assistance of buried p layer are explored. The influences of anodic current density on the formation, morphology, and properties of n-NPS are measured. Such n-NPS films have nanoscaled pores and high-aspect-ratio pillars. Since the anisotype junction is forward biased during the anodization process, many holes can drift straightupward from p layer and participate in the electrochemical reaction. At room temperature, high peak-to-valley current ratios of about 117.3 can be obtained in negative difference conductance region as well as strong visible light emissions are clearly observed under ultraviolet excitation.
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73.61.Cw Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
68.55.-a Thin film structure and morphology
61.43.Gt Powders, porous materials

Ultrafast nonlinear optical tuning of photonic crystal cavities

Ilya Fushman, Edo Waks, Dirk Englund, Nick Stoltz, Pierre Petroff, and Jelena Vučković

Appl. Phys. Lett. 90, 091118 (2007); http://dx.doi.org/10.1063/1.2710080 (3 pages) | Cited 42 times

Online Publication Date: 2 March 2007

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The authors demonstrate fast (up to 20 GHz), low-power (60 fJ, 3 ps pulses) modulation of photonic crystal cavities in GaAs containing InAs quantum dots. Rapid modulation through blueshifting of the cavity resonance is achieved via free-carrier injection by an above-band picosecond laser pulse. Slow tuning by several linewidths due to laser-induced heating is also demonstrated.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.82.Gw Other integrated-optical elements and systems
42.70.Qs Photonic bandgap materials

Focusing of light by a nanohole array

Fu Min Huang, Nikolay Zheludev, Yifang Chen, and F. Javier Garcia de Abajo

Appl. Phys. Lett. 90, 091119 (2007); http://dx.doi.org/10.1063/1.2710775 (3 pages) | Cited 37 times

Online Publication Date: 2 March 2007

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The authors demonstrate a mechanism for focusing at optical frequencies based on the use of nanohole quasiperiodic arrays in metal screens. Using coherent illumination at 660 nm and scanning aperture optical microscopy, ∼ 290 nm “hot spots” were observed at a distance of ∼ 12.5 μm from the array. Even smaller hot spots of about ∼ 200 nm in waist were observed closer to the plane of the array.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Submicron-diameter semiconductor pillar microcavities with very high quality factors

G. Lecamp, J. P. Hugonin, P. Lalanne, R. Braive, S. Varoutsis, S. Laurent, A. Lemaître, I. Sagnes, G. Patriarche, I. Robert-Philip, and I. Abram

Appl. Phys. Lett. 90, 091120 (2007); http://dx.doi.org/10.1063/1.2711186 (3 pages) | Cited 20 times

Online Publication Date: 2 March 2007

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Pillar microcavities are subject to two common fabrication artifacts: Bragg mirror corrugation and oxide deposit cladding. In this letter the authors investigate the impact of these features on the quality factor. A quasiperiodic variation of the quality factor as a function of the pillar diameter is experimentally observed and well described by theory. Moreover, observation of quality factors in excess of 1500, close to the theoretical limit, is reported for 600-nm-diameter GaAs micropillars bounded by AlGaAs/GaAs Bragg mirrors.
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42.79.Bh Lenses, prisms and mirrors
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Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

J. G. Lozano, F. M. Morales, R. García, D. González, V. Lebedev, Ch. Y. Wang, V. Cimalla, and O. Ambacher

Appl. Phys. Lett. 90, 091901 (2007); http://dx.doi.org/10.1063/1.2696282 (3 pages) | Cited 21 times

Online Publication Date: 26 February 2007

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Cubic InN layers were grown by molecular beam epitaxy on buffer layers of indium oxide prepared onto sapphire (0001) substrates. The structure was analyzed by means of electron diffraction and transmission electron microscopy. The intermediate indium oxide layer presents a body centered cubic (bcc) structure, with bcc-In2O3(001)‖Al2O3(0001) plane relationship. Thereupon, a zinc-blende phase of InN (001) was grown with a reticular misfit of 1.6% and a significant reduction of mismatch-related defects. This good coherence offers a promising expectation to obtain high quality cubic InN layers superior to other highly mismatched cubic substrates used previously.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)

Critical film thickness dependence on As flux in In0.27Ga0.73As/GaAs(001) films

A. Riposan, J. Mirecki Millunchick, and Chris Pearson

Appl. Phys. Lett. 90, 091902 (2007); http://dx.doi.org/10.1063/1.2476259 (3 pages) | Cited 5 times

Online Publication Date: 26 February 2007

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The transition between planar and nonplanar growth is examined for compressively strained In0.27Ga0.73As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (tSK) is strongly dependent on As flux. For high values of As flux, tSK increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Third order nonlinear susceptibility of InN at near band-gap wavelengths

F. B. Naranjo, M. González-Herráez, H. Fernández, J. Solis, and E. Monroy

Appl. Phys. Lett. 90, 091903 (2007); http://dx.doi.org/10.1063/1.2709891 (3 pages) | Cited 4 times

Online Publication Date: 26 February 2007

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The authors report room-temperature measurements of the third order nonlinear susceptibility modulus ∣χ(3)∣ of thick ( ∼ 600 nm) InN layers. Transmission measurements provide a room-temperature value for the optical band gap of the samples slightly above 1500 nm. Third order nonlinear optical susceptibility has been measured using degenerate four wave mixing experiments at wavelengths near and above band gap. ∣χ(3)∣ values of (4.2–10)×10−10 esu were measured at this wavelength range. The associated relaxation time of the generated population grating at 1500 nm was measured. The obtained value of 4.8 ps is consistent with a nonradiative recombination mechanism.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Dj Gratings

Phase change behaviors of Sn-doped Ge–Sb–Te material

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong

Appl. Phys. Lett. 90, 091904 (2007); http://dx.doi.org/10.1063/1.2475390 (3 pages) | Cited 19 times

Online Publication Date: 27 February 2007

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Sn-doped Ge–Sb–Te material was prepared by laser synthesis. It has a rocksalt crystal structure for Sn doping content less than 30 at. %. A phase change temperature tester was developed to in situ measure crystallization temperature and melting point of Sn-doped Ge–Sb–Te. The crystalliza-tion temperature of Sn-doped Ge–Sb–Te is close to that of Ge2Sb2Te5 while its melting point is much lower than that of Ge2Sb2Te5. The melting points of Sn9.8Ge20.3Sb28.4Te41.5 and Sn18.8Ge19.5Sb25.3Te36.4 are 475 and 450 °C, respectively. The crystallization speed was tested by an ultraviolet light at pulse duration of 30 ns. It exhibits a high crystallization speed.
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64.70.D- Solid-liquid transitions
64.70.K- Solid-solid transitions
42.62.-b Laser applications
61.66.Fn Inorganic compounds

SiOx/Si radial superlattices and microtube optical ring resonators

R. Songmuang, A. Rastelli, S. Mendach, and O. G. Schmidt

Appl. Phys. Lett. 90, 091905 (2007); http://dx.doi.org/10.1063/1.2472546 (3 pages) | Cited 37 times

Online Publication Date: 27 February 2007

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Scanning and transmission electron microscopy reveals that SiOx/Si layers can roll up into microtubes and radial superlattices on a Si substrate. These hybrid objects are thermally stable up to 850 °C and emit light in the visible spectral range at room temperature. For tubes disengaged from the substrate surface, optically resonant emissions with mode spacings inversely proportional to the tube diameter are observed and agree excellently with those obtained from finite-difference time-domain simulations. The resonant modes recorded are strictly polarized along the tube axis.
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42.79.Wc Optical coatings
42.79.-e Optical elements, devices, and systems
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