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10 Sep 2007

Volume 91, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 112501 (2007); http://dx.doi.org/10.1063/1.2780107 (3 pages)

Y. Liu, S. Gliga, R. Hertel, and C. M. Schneider
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Enhanced efficiency of multilayer organic light-emitting diodes with a low-refractive index hole-transport layer: An effect of improved outcoupling?

Anne Köhnen, Malte C. Gather, Nina Riegel, Philipp Zacharias, and Klaus Meerholz

Appl. Phys. Lett. 91, 113501 (2007); http://dx.doi.org/10.1063/1.2773930 (3 pages) | Cited 9 times

Online Publication Date: 10 September 2007

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The authors report on an internal device modification for multilayer organic light-emitting diodes (OLEDs) with enhanced efficiency that promises high compatibility with conventional manufacturing processes. By copolymerization of a hole-conducting monomer with a compound possessing a lower refractive index, a hole-transport layer with reduced optical density but slightly reduced hole-transport properties is formed. Multilayer OLEDs based on this reduced-index layer show a 25% increased efficiency compared to reference devices. The results are compared to optical simulations of the dipole emission from thin organic films. It is found that the efficiency improvement is only to some extent due to enhanced outcoupling resulting directly from the reduced refractive index but primarily due to a change of the width of the emission zone.
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85.60.Jb Light-emitting devices

Organic field effect transistors with dipole-polarized polymer gate dielectrics for control of threshold voltage

Heisuke Sakai, Yoshikazu Takahashi, and Hideyuki Murata

Appl. Phys. Lett. 91, 113502 (2007); http://dx.doi.org/10.1063/1.2783180 (3 pages) | Cited 14 times

Online Publication Date: 10 September 2007

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The authors demonstrate organic field effect transistors (OFETs) with a dipole-polarized polyurea for the gate dielectrics. In the dielectrics, the internal electric field induces the mobile charge carrier in the semiconductor layer to the semiconductor-dielectric interface. OFETs with dipole-polarized gate dielectrics exhibit lower threshold voltage. With nonpolarized gate dielectrics, the threshold voltage was −11.4 V, whereas that decreased to −5.3 V with polarized gate dielectrics. In addition to the threshold voltage, polarized gate dielectrics reduced subthreshold swing from 4.1 to 2.4 V/decade at the gate voltage of −20 V. These results show that dipole-polarized polyurea gate dielectrics allow us to operate OFETs with lower power consumption.
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85.30.Tv Field effect devices

ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

Z. Z. Ye, J. G. Lu, Y. Z. Zhang, Y. J. Zeng, L. L. Chen, F. Zhuge, G. D. Yuan, H. P. He, L. P. Zhu, J. Y. Huang, and B. H. Zhao

Appl. Phys. Lett. 91, 113503 (2007); http://dx.doi.org/10.1063/1.2783262 (3 pages) | Cited 30 times

Online Publication Date: 10 September 2007

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ZnO homojunction light-emitting diodes (LEDs), comprised of N–Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer.
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85.60.Jb Light-emitting devices

Manipulation of spin states by dipole polarization switching

Nammee Kim, Heesang Kim, and T. W. Kang

Appl. Phys. Lett. 91, 113504 (2007); http://dx.doi.org/10.1063/1.2783275 (3 pages) | Cited 4 times

Online Publication Date: 10 September 2007

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A ferromagnetic/ferroelectric hybrid double quantum disk structure is proposed, capable of manipulating spin states. Switching of spontaneous electric polarization of the ferroelectric quantum disk changes the potential profile of the system and induces ground state transition. Two carrier spin states are separated into ferroelectric semiconductor and diluted magnetic semiconductor disks via asymmetric Zeeman splitting of the coupled quantum disks. The proof of the spin separation resulting from the dipole polarization switching is shown by the probability density change of the lowest energy subband. Evolution of the spin state is also predicted from the subband energy diagram as a function of the bias voltage.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.25.Rb Spin relaxation and scattering
73.20.At Surface states, band structure, electron density of states
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
75.60.-d Domain effects, magnetization curves, and hysteresis

High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

Jae Kyeong Jeong, Jong Han Jeong, Hui Won Yang, Jin-Seong Park, Yeon-Gon Mo, and Hye Dong Kim

Appl. Phys. Lett. 91, 113505 (2007); http://dx.doi.org/10.1063/1.2783961 (3 pages) | Cited 126 times

Online Publication Date: 11 September 2007

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The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide (a-IGZO) channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the a-IGZO TFTs was investigated. At a relatively low IZO power of 400 W, the field-effect mobility (μFE) and subthreshold gate swing (S) of the a-IGZO TFTs were dramatically improved to 19.3 cm2/V s and 0.35 V/decade, respectively, compared to those (11.2 cm2/V s and 1.11 V/decade) for the TFTs with the a-IGZO channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold IDS-VGS characteristics at an IZO power of 400 W compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the a-IGZO channel.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology

Highly efficient simplified organic light emitting diodes

J. Meyer, S. Hamwi, T. Bülow, H.-H. Johannes, T. Riedl, and W. Kowalsky

Appl. Phys. Lett. 91, 113506 (2007); http://dx.doi.org/10.1063/1.2784176 (3 pages) | Cited 97 times

Online Publication Date: 11 September 2007

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The authors report on highly efficient organic light emitting diodes (OLEDs) consisting of only two organic layers. The key to the simplification is the direct injection of holes into the wide band gap hole transport material 4,4′,4″-tris(N-carbazolyl)-triphenyl amine (highest occupied molecular orbital is 5.9 eV) through an indium tin oxide/tungsten oxide (WO3) anode. Kelvin probe analysis has revealed an extremely high work function of 6.4 eV for WO3. The efficiencies of the simplified OLEDs exceed 40 lm/W and 45 cd/A at a brightness of 100 cd/m2, unsurpassed by other comparably simple OLED devices. Therefore, our OLED architecture demonstrates highly efficient, yet easy to fabricate devices.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Direct mass determination of hydrogen uptake using a quartz crystal microbalance

Ihor Kulchytskyy, Martin G. Kocanda, and Tao Xu

Appl. Phys. Lett. 91, 113507 (2007); http://dx.doi.org/10.1063/1.2784945 (3 pages) | Cited 5 times

Online Publication Date: 11 September 2007

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The authors demonstrate the application of a quartz crystal microbalance for direct mass determination of hydrogen uptake in storage materials in the pressure range of 0–40 bars. The frequency shift of a quartz crystal coated with hydrogen absorbing materials is affected by the hydrogen mass uptake on the crystal, the pressure and the viscosity of the gases, and the crystal surface roughness, of which the roughness contribution has no analytical expression. Through a control experiment on the same crystal in helium, the roughness contribution in hydrogen can be derived and the frequency shift due to the hydrogen mass uptake can be obtained.
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84.60.Ve Energy storage systems, including capacitor banks
06.30.Dr Mass and density

Suppression of short channel effect in organic thin film transistors

K. Tukagoshi, F. Fujimori, T. Minari, T. Miyadera, T. Hamano, and Y. Aoyagi

Appl. Phys. Lett. 91, 113508 (2007); http://dx.doi.org/10.1063/1.2785118 (3 pages) | Cited 15 times

Online Publication Date: 11 September 2007

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Short-channel effect in organic thin film transistors with top-contact configuration is effectively suppressed to enhance the performance. The space charge limited current, which prevents the appearance of output saturation behavior, is sufficiently suppressed by reducing the thickness of both the pentacene film and the gate insulator. Molecular doping of the pentacene thin film in the contact reduces the contact resistance and allows a greater increase in field-effect mobility with decreasing channel length. These structural optimizations realize a submicrometer-channel transistor with clear saturation characteristics and low-voltage operation.
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85.30.Tv Field effect devices
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
85.65.+h Molecular electronic devices
85.40.Ry Impurity doping, diffusion and ion implantation technology
84.40.-x Radiowave and microwave (including millimeter wave) technology

Carrier capture at the SiO2–Si interface: A physical model

Y. Wang and K. P. Cheung

Appl. Phys. Lett. 91, 113509 (2007); http://dx.doi.org/10.1063/1.2778354 (3 pages) | Cited 3 times

Online Publication Date: 12 September 2007

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The carrier (electron and hole) capture cross section of defects at the SiO2–Si interface is measured using trap-fill time in gigahertz charge-pumping experiment. The ability to use a highly asymmetric rectangular wave with very fast rise and fall times in our charge-pumping experiment greatly simplified data interpretation. Trap-fill times of less than or equal to 0.7 ns are found for both electrons and holes. The corresponding capture cross section of 10−15 cm2 or larger for both electron and hole cannot be explained by the usual multiphonon emission mechanism. A modified cascade capture model involving the strained Si–Si bonds around the Pb center is proposed to explain the large capture cross sections.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Wide-field Fourier transform spectral imaging

Michael Atlan and Michel Gross

Appl. Phys. Lett. 91, 113510 (2007); http://dx.doi.org/10.1063/1.2778357 (3 pages) | Cited 1 time

Online Publication Date: 12 September 2007

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The authors report experimental results of parallel measurement of spectral components of the light. The temporal fluctuations of an optical field mixed with a separate reference are recorded with a high throughput complementary metal oxide semiconductor camera (1 Mpixel at 2 kHz frame rate). A numerical Fourier transform of the time-domain recording enables wide-field coherent spectral imaging. Qualitative comparisons with frequency-domain wide-field laser Doppler imaging are provided.
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42.30.Kq Fourier optics
42.79.Pw Imaging detectors and sensors

Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements

Mohammad R. Esmaeili-Rad, Andrei Sazonov, and Arokia Nathan

Appl. Phys. Lett. 91, 113511 (2007); http://dx.doi.org/10.1063/1.2783971 (3 pages) | Cited 8 times

Online Publication Date: 12 September 2007

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The authors discuss time and temperature dependences of the shift in threshold voltage (ΔVT) of nanocrystalline silicon (nc-Si) thin film transistors (TFTs) stressed at constant drain currents. In contrast to the behavior of the hydrogenated amorphous silicon (a-Si:H) counterpart, a weak temperature dependence of ΔVT was observed. The results follow the charge trapping model and the predicted stretched-exponential time dependence that saturates at prolonged stress times. In addition, ΔVT does not fit into the thermalization energy concept that was developed based on the defect state creation model for a-Si:H TFTs. The results indicate absence of defect state creation in nc-Si TFTs.
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85.30.Tv Field effect devices

Magnetic domain configurations of epitaxial chromium dioxide (CrO2) nanostructures

Xiaojing Zou and Gang Xiao

Appl. Phys. Lett. 91, 113512 (2007); http://dx.doi.org/10.1063/1.2784946 (3 pages) | Cited 10 times

Online Publication Date: 12 September 2007

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Magnetic domain structures of submicrometric epitaxial CrO2 fabricated using selective-area growth technique were studied by magnetic force microscopy. In-plane, lamellar domain structure with fragmented walls aligned along the magnetic easy axis direction is observed, indicating the existence of a large magnetocrystalline anisotropy. A classical model for ferromagnetic materials with a uniaxial anisotropy was used to explain this domain configuration. Estimates of the domain wall energy density and exchange stiffness constant for CrO2 were obtained.
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75.60.Ch Domain walls and domain structure
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.30.Hx Magnetic impurity interactions
75.30.Et Exchange and superexchange interactions
81.16.-c Methods of micro- and nanofabrication and processing

Electro-optical circuits based on light-sensing ambipolar organic field-effect transistors

Thomas D. Anthopoulos

Appl. Phys. Lett. 91, 113513 (2007); http://dx.doi.org/10.1063/1.2778754 (3 pages) | Cited 22 times

Online Publication Date: 13 September 2007

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The author reports on light-sensing ambipolar organic field-effect transistors (LS-OFETs) based on blends of[6,6]-phenyl-C61-butyric acid methyl ester and poly [2-methoxy-5-(3′,7′-dimethyloctyloxy)]-p-phenylene vinylene. By carefully tuning the ambipolar transport character of the LS-OFETs, their photoresponsivity can be controlled and optimized. By combining LS-OFETs with ordinary unipolar organic transistors, fabrication of electro-optical switches and logic circuits, such as NOT and OR gates, is demonstrated. This is the only report of organic electro-optical circuits in which signal processing involves the use of both optical and electrical input signals. Such circuits could one day be explored in optical sensor array applications.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Surface plasmon increase absorption in polymer photovoltaic cells

Kristofer Tvingstedt, Nils-Krister Persson, Olle Inganäs, Aliaksandr Rahachou, and Igor V. Zozoulenko

Appl. Phys. Lett. 91, 113514 (2007); http://dx.doi.org/10.1063/1.2782910 (3 pages) | Cited 67 times

Online Publication Date: 13 September 2007

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The authors demonstrate the triggering of surface plasmons at the interface of a metal grating and a photovoltaic bulk heterojunction blend of alternating polyfluorenes and a fullerene derivative. An increased absorption originating from surface plasmon resonances is confirmed by experimental reflection studies and theoretical modeling. Plasmonic resonances are further confirmed to influence the extracted photocurrent from devices. More current is generated at the wavelength position of the plasmon resonance peak. High conductivity polymer electrodes are used to build inverted sandwich structures with top anode and bottom metal grating, facilitating for triggering and characterization of the surface plasmon effects.
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82.45.Wx Polymers and organic materials in electrochemistry
85.60.-q Optoelectronic devices
82.45.Fk Electrodes

Band offsets between amorphous LaAlO3 and In0.53Ga0.47As

N. Goel, W. Tsai, C. M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D. G. Schlom, H. Wen, C. Gaspe, J. C. Keay, M. B. Santos, L. V. Goncharova, E. Garfunkel, and T. Gustafsson

Appl. Phys. Lett. 91, 113515 (2007); http://dx.doi.org/10.1063/1.2783264 (3 pages) | Cited 5 times

Online Publication Date: 13 September 2007

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The band offsets between an amorphous LaAlO3 dielectric prepared by molecular-beam deposition and a n-type In0.53Ga0.47As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO3/InGaAs interface are 3.1±0.1 and 2.35±0.2 eV, respectively. The band gap of LaAlO3, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2±0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAlO3.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing

On the electrical stress-induced oxide-trapped charges in thin HfO2/SiO2 gate dielectric stack

Piyas Samanta, Chunxiang Zhu, and Mansun Chan

Appl. Phys. Lett. 91, 113516 (2007); http://dx.doi.org/10.1063/1.2783967 (3 pages) | Cited 4 times

Online Publication Date: 13 September 2007

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Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO2/SiO2/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO2 contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO2/SiO2 stacks, we have identified overcoordinated [Si2 = OH]+ centers as the proton-induced defects located in the interfacial SiO2 layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.
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61.72.Nn Stacking faults and other planar or extended defects
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.35.Md Surface thermodynamics, surface energies
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Coplanar waveguide metamaterials: The role of bandwidth modifying slots

Ibraheem A. Ibraheem and Martin Koch

Appl. Phys. Lett. 91, 113517 (2007); http://dx.doi.org/10.1063/1.2784965 (3 pages) | Cited 5 times

Online Publication Date: 13 September 2007

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The authors propose a coplanar waveguide stopband metasurface based on the Babinet principle. The resulting layout is a compact planar metal structure with complementary split ring resonators, which exhibits a high rejection stop band. The complementary rings provide a frequency band with an effective negative dielectric permittivity. Moreover, the rejected bandwidth can be expanded by introducing slots close to the rings. The authors provide a simple physical model which explains the impact of the slots. Simulations confirm the expected behavior and are in excellent agreement with the measurements.
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42.70.-a Optical materials

White p-i-n organic light-emitting devices with high power efficiency and stable color

Meng-Huan Ho, Shih-Feng Hsu, Jia-Wei Ma, Shiao-Wen Hwang, Pu-Cheng Yeh, and Chin H. Chen

Appl. Phys. Lett. 91, 113518 (2007); http://dx.doi.org/10.1063/1.2784971 (3 pages) | Cited 12 times

Online Publication Date: 13 September 2007

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Highly efficient p-i-n two-component white organic light-emitting devices have been fabricated with a thin dual emission layer system comprised of one codeposited emitting layer with blue and yellow dyes and one blue emitting layer, which gives rise to a balance white emission. The p-i-n white device achieved an electroluminescence efficiency of 10 cd/A and a power efficiency of 9.3 lm/W at 1000 cd/m2 and a low voltage of 3.4 V with a Commission Internationale de l’Eclairage coordinates of (0.32, 0.43). The electroluminescent color of this p-i-n white organic light-emitting diode device has been shown to be immune to drive current density variations.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Band structure controlled by chiral imprinting

P. Castro-Garay, J. Adrian Reyes, and R. Ramos-Garcia

Appl. Phys. Lett. 91, 113519 (2007); http://dx.doi.org/10.1063/1.2784174 (3 pages) | Cited 4 times

Online Publication Date: 14 September 2007

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Using the configuration of an imprinted cholesteric elastomer immersed in a racemic solvent, the authors find the solution of the boundary-value problem for the reflection and transmission of incident optical waves due to the elastomer. They show a significant width reduction of the reflection band for certain values of nematic penetration depth, which depends on the volume fraction of molecules from the solvent, whose handedness is preferably absorbed. The appearance of nested band gaps of both handednesses during the sorting mixed chiral process is also obtained. This suggests the design of chemically controlled optical filters and optically monitored chiral pumps.
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42.70.Df Liquid crystals
61.30.Vx Polymer liquid crystals
78.20.Ek Optical activity
42.70.Jk Polymers and organics
42.79.Ci Filters, zone plates, and polarizers

The use of ZnO as optical spacer in polymer solar cells: Theoretical and experimental study

Jan Gilot, Ionuţ Barbu, Martijn M. Wienk, and René A. J. Janssen

Appl. Phys. Lett. 91, 113520 (2007); http://dx.doi.org/10.1063/1.2784961 (3 pages) | Cited 105 times

Online Publication Date: 14 September 2007

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For organic solar cells, insertion of an optical spacer between the active layer and the reflective electrode results in a redistribution of the optical electric field. In this paper, theoretical calculations using optical modeling are compared with experimental results for devices with ZnO as optical spacer. An excellent agreement was found for blends composed of poly(3-hexylthiophene) and a fullerene derivative [6,6]-phenyl C61 butyric acid methyl ester.
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84.60.Jt Photoelectric conversion
82.45.Fk Electrodes
42.70.Jk Polymers and organics

Frenkel-Poole trap energy extraction of atomic layer deposited Al2O3 and HfxAlyO thin films

Chun-Chen Yeh, T. P. Ma, Nirmal Ramaswamy, Noel Rocklein, Dan Gealy, Thomas Graettinger, and Kyu Min

Appl. Phys. Lett. 91, 113521 (2007); http://dx.doi.org/10.1063/1.2786021 (3 pages) | Cited 23 times

Online Publication Date: 14 September 2007

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Frenkel-Poole (FP) trap energies of atomic layer deposited Al2O3 and HfxAlyO thin films with various Hf/Al compositions have been extracted. Using a method based on the field and temperature dependence of FP conduction, intrinsic trap energies under zero electric field can be extrapolated. Results indicate that FP trap energies increase from 0.56 to 1.48 eV when adding more and more Al to HfO2. The trap energy seems to be inversely proportional to the square of the dielectric constant of the film, suggesting that traps may originate from the same type of defect, whose energy level is mediated by the dielectric constant.
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73.61.Ng Insulators
73.50.Fq High-field and nonlinear effects
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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