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10 Sep 2007

Volume 91, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 91, 112501 (2007); http://dx.doi.org/10.1063/1.2780107 (3 pages)

Y. Liu, S. Gliga, R. Hertel, and C. M. Schneider
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Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas

Th. Nguyen-Tran, P. Roca i Cabarrocas, and G. Patriarche

Appl. Phys. Lett. 91, 111501 (2007); http://dx.doi.org/10.1063/1.2784294 (3 pages) | Cited 3 times

Online Publication Date: 14 September 2007

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The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12 nm. To this end, the plasma on time was kept below 1 s. The radial growth rate of nanoparticles was varied in the range from 7.5 to 75 nm/s by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.
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81.05.Cy Elemental semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
68.47.Fg Semiconductor surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
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