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17 Sep 2007

Volume 91, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 123101 (2007); http://dx.doi.org/10.1063/1.2784389 (3 pages)

Thierry Laroche, Alexandre Vial, and Matthieu Roussey
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Nonlinear capacitance dilatometry for investigating elastic and electromechanical properties of ferroelectrets

S. Bauer-Gogonea, F. Camacho-Gonzalez, R. Schwödiauer, B. Ploss, and S. Bauer

Appl. Phys. Lett. 91, 122901 (2007); http://dx.doi.org/10.1063/1.2784960 (3 pages) | Cited 3 times

Online Publication Date: 17 September 2007

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Nonlinearities in ferroelectret polymer foam capacitors arise from voltage-dependent thickness changes. Such thickness changes are caused by the converse piezoelectric and electrostrictive effects in these soft materials. The authors show that the higher harmonics of the current response during application of a sinusoidal voltage to ferroelectret capacitors provide information on the elastic and electromechanical properties of the foam. The authors demonstrate the potential of this versatile measurement technique by investigating the temperature dependence of the piezoelectric response and by monitoring the changes in the elastic and electromechanical properties during inflation of cellular polypropylene.
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06.30.Ka Basic electromagnetic quantities
07.10.-h Mechanical instruments and equipment
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
82.70.Rr Aerosols and foams
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.-j Piezoelectricity and electromechanical effects

The effect of band offset on the retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3,Y2O3)-semiconductor capacitors and field effect transistors

Yu-Di Su, Wen-Chieh Shih, and Joseph Ya-min Lee

Appl. Phys. Lett. 91, 122902 (2007); http://dx.doi.org/10.1063/1.2784203 (3 pages) | Cited 6 times

Online Publication Date: 17 September 2007

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Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) and capacitors with the structures of Al/Pb (Zr0.53,Ti0.47) O3 (PZT)/Dy2O3/Si and Al/PZT/Y2O3/Si were fabricated. The variation of the memory window as a function of annealing temperature was studied. The maximum capacitor-voltage (C-V) memory window of Al/PZT/Dy2O3/Si capacitors was 2.95 V. The retention times of Al/PZT/Y2O3/Si and Al/PZT/Dy2O3/Si MFISFETs were 11.5 days and 11.1 h, respectively. The longer retention time of Al/PZT/Y2O3/Si MFISFETs is attributed to the larger conduction band offset at the Y2O3/Si interface (2.3 eV) compared to that of Dy2O3/Si (0.79 eV).
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85.30.Tv Field effect devices
85.50.Gk Non-volatile ferroelectric memories
84.32.Tt Capacitors

Electromechanical coupling coefficient of 0.70Pb(Mg1/3Nb2/3)O3–0.30PbTiO3 single crystal resonator with arbitrary aspect ratio

Naixing Huang, Rui Zhang, and Wenwu Cao

Appl. Phys. Lett. 91, 122903 (2007); http://dx.doi.org/10.1063/1.2784949 (3 pages) | Cited 3 times

Online Publication Date: 18 September 2007

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Based on mode coupling theory and the fundamental energy ratio definition of the electromechanical coupling coefficient, a unified formula has been derived to calculate the effective electromechanical coupling coefficient keff of 0.70Pb(Mg1/3Nb2/3)O3–0.30PbTiO3 (PMN-30%PT) ferroelectric single crystal cylindrical resonator with arbitrary aspect ratio. The keff dependence on resonator aspect ratio of PMN-30%PT crystal shows similar characteristics as that of the conventional piezoelectric ceramics Pb(ZrxTi1−x)O3 (PZT). However, compared to PZT-5 ceramics, PMN-30%PT single crystal has a smaller aspect ratio where the keff changes dramatically and there is also a stronger coupling between thickness and radial modes causing much larger mode splitting.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Magnetoelectric laminate composite based tachometer for harsh environment applications

Robert Myers, Rashed Adnan Islam, Makarand Karmarkar, and Shashank Priya

Appl. Phys. Lett. 91, 122904 (2007); http://dx.doi.org/10.1063/1.2784959 (3 pages) | Cited 8 times

Online Publication Date: 18 September 2007

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This study reports the design, fabrication, and characterization of a tachometer utilizing magnetoelectric (ME) laminate composites with sandwich structure consisting of Pb(Zr,Ti)O3 (PZT) and Galfenol. High temperature characterization of Galfenol shows that it can sustain the magnetic property over 500 °C. The Curie temperature of PZT compositions was in the range of 325–340 °C. The magnitude of the ME coefficient was found to scale with the dimensionless ratio (d g/S), where d is the piezoelectric strain constant, g is the piezoelectric voltage constant, and S is the elastic compliance. The tachometer design is based on the principle that when ME composite is exposed to oscillating magnetic field, it generates voltage with the same frequency.
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06.30.Gv Velocity, acceleration, and rotation

Dielectric relaxations and formation mechanism of giant dielectric constant step in CaCu3Ti4O12 ceramics

Lei Ni and Xiang Ming Chen

Appl. Phys. Lett. 91, 122905 (2007); http://dx.doi.org/10.1063/1.2785128 (3 pages) | Cited 45 times

Online Publication Date: 18 September 2007

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The dielectric relaxation behaviors of CaCu3Ti4O12 ceramics were evaluated together with the mixed-valence structure, and the formation mechanism of a giant dielectric constant step was discussed. The giant dielectric constant step was bounded by two dielectric relaxations in low and high temperature ranges. The low-temperature dielectric relaxation was intrinsic, and it was very similar to the electronic ferroelectricity, while the high temperature relaxorlike dielectric peak was assigned to be the result of defect ordering since it could be suppressed by O2 annealing. Both the low and high temperature dielectric relaxations were the thermal activated relaxation process following the Arrhenius law. Moreover, it was supposed that the giant dielectric constant step resulted from the competing balance between the low and high temperature dielectric relaxations.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity
71.20.Ps Other inorganic compounds
81.40.Gh Other heat and thermomechanical treatments

Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayer films

Hong Liu, Xiaogang Gong, Jin-e Liang, Xuedong Li, Dingquan Xiao, Jianguo Zhu, and Zhaohui Pu

Appl. Phys. Lett. 91, 122906 (2007); http://dx.doi.org/10.1063/1.2783482 (3 pages)

Online Publication Date: 18 September 2007

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A series of Pb(Zr1−xTix)O3 multilayer films consisted of Pb(Zr0.8Ti0.2)O3 and Pb(Zr0.2Ti0.8)O3 were deposited on Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering. All the films comprise six periodicities of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 with periodicity thickness of 133 nm, but the layer thicknesses of rhombohedral phase and tetragonal phase in one periodicity are varied. The films with two layer thickness ratio of 1:3 possess enhanced dielectric and ferroelectric properties: dielectric constant εr = 328 at 10 kHz, dielectric loss tgδ = 0.0098, and sharply enhanced remanent polarization Pr = 32.6 μC/cm2. The layer structure and interlayer stress of Pb(Zr1−xTix)O3 multilayer films play important roles in the electric enhancement.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
81.15.Cd Deposition by sputtering
68.65.Ac Multilayers

Aging-induced double ferroelectric hysteresis loops in BiFeO3 multiferroic ceramic

G. L. Yuan, Y. Yang, and Siu Wing Or

Appl. Phys. Lett. 91, 122907 (2007); http://dx.doi.org/10.1063/1.2786013 (3 pages) | Cited 17 times

Online Publication Date: 18 September 2007

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Double ferroelectric hysteresis (P-E) loops are observed in aged BiFeO3 multiferroic ceramic at room temperature and are explained according to an aging effect driven by charged defects with high activation energy. The aged BiFeO3 shows R3c defect symmetry and allows a nonzero charged defect-induced polarization (PD) below the ferroelectric Curie temperature. This PD is strong enough to recover the switched 180° ferroelectric domains upon the removal of E, but it is rather weak to effectively switch back the 71°/109° ferroelectric domains. As a result, the traits of the double P-E loops weaken with increasing the maximum E from 121 to 167 kV/cm.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
77.80.Dj Domain structure; hysteresis

Dielectric tunable properties of low dielectric constant Ba0.5Sr0.5TiO3–Mg2TiO4 microwave composite ceramics

Xiujian Chou, Jiwei Zhai, and Xi Yao

Appl. Phys. Lett. 91, 122908 (2007); http://dx.doi.org/10.1063/1.2784202 (3 pages) | Cited 44 times

Online Publication Date: 18 September 2007

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Ba0.5Sr0.5TiO3–Mg2TiO4 composite ceramics are fabricated via the conventional solid-state reaction method. The microstructures, dielectric tunability, and microwave properties of composite ceramics are investigated. The dielectric constant is tailored from 335 to 35 by manipulating the addition of Mg2TiO4 from 50% to 80% weight ratio and the tunability is 10.8% measured at 10 kHz for the 80% Mg2TiO4 addition. The composite ceramics with high Q value (>200) at L band are useful for potential tunable microwave device applications in the wireless communication system.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity
61.72.-y Defects and impurities in crystals; microstructure

Large enhancement in polarization response and energy density of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) by interface effect in nanocomposites

Baojin Chu, Minren Lin, Breet Neese, Xin Zhou, Qin Chen, and Q. M. Zhang

Appl. Phys. Lett. 91, 122909 (2007); http://dx.doi.org/10.1063/1.2786839 (3 pages) | Cited 19 times

Online Publication Date: 19 September 2007

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The authors report the finding of large enhancement in the electric energy density and electric displacement level in nanocomposites of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) relaxor ferroelectric polymer/ZrO2 nanoparticles. Through the interface effect, the presence of the nanoparticles (with only 1.6 vol % of ZrO2 nanoparticles in the composite) raises the maximum electric displacement D from 0.085 C/m2 under 400 MV/m in the neat terpolymer to more than 0.11 C/m2 under 300 MV/m in the nanocomposites. Consequently, a high energy density of 10.5 J/cm3 can be achieved under a lower field (300 MV/m) in the nanocomposites compared with the neat terpolymer.
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77.84.Lf Composite materials
77.84.Jd Polymers; organic compounds
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis

Characterizing crystalline polymorph transitions in HfO2 by extended x-ray absorption fine-structure spectroscopy

Patrick S. Lysaght, Joseph C. Woicik, M. Alper Sahiner, Byoung-Hun Lee, and Raj Jammy

Appl. Phys. Lett. 91, 122910 (2007); http://dx.doi.org/10.1063/1.2789180 (3 pages) | Cited 8 times

Online Publication Date: 19 September 2007

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Atomic layer deposited HfO2 films on Si(100) substrates have been measured by extended x-ray absorption fine-structure (EXAFS), pre- and postanneal processing. Analysis of the second coordination shell indicates an increase in atomic order with increasing film thickness for each anneal temperature and with increasing anneal temperature for each film thickness. Fourier transformed EXAFS spectra fit with HfO2 reference phases have identified orthorhombic to tetragonal to monoclinic transformations. Evidence for greater retention of the higher permittivity metastable tetragonal phase corresponding to thinner HfO2 films is consistent with a surface energy effect giving rise to the critical grain size phenomenon.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.K- Solid-solid transitions
78.70.Dm X-ray absorption spectra
77.55.-g Dielectric thin films
81.40.Gh Other heat and thermomechanical treatments
77.22.Ch Permittivity (dielectric function)

Universal frequency-dependent ac conductivity of conducting polymer networks

A. N. Papathanassiou, I. Sakellis, and J. Grammatikakis

Appl. Phys. Lett. 91, 122911 (2007); http://dx.doi.org/10.1063/1.2779255 (3 pages) | Cited 28 times

Online Publication Date: 19 September 2007

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A model based on the aspect of the distribution of the length of conduction paths accessible for electric charge flow reproduces the universal power-law dispersive ac conductivity observed in polymer networks and, generally, in disordered matter. Power exponents larger than unity observed in some cases are physically acceptable within this model. A saturation high frequency region is also predicted, in agreement with experimental results. There exists not a “universal fractional power law” (and it is useless searching for a unique common critical exponent) but a qualitative universal behavior of the ac conductivity in disordered media.
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72.30.+q High-frequency effects; plasma effects
72.80.Le Polymers; organic compounds (including organic semiconductors)

Significant increase of the ferroelectric phase transition temperature in partially deuterated KH2PO4 by proton irradiation

Se Hun Kim, Kyu Won Lee, B. H. Oh, J. J. Kweon, and Cheol Eui Lee

Appl. Phys. Lett. 91, 122912 (2007); http://dx.doi.org/10.1063/1.2784178 (3 pages) | Cited 4 times

Online Publication Date: 19 September 2007

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The ferroelectric phase transition temperature was significantly raised by 5 K in partially deuterated KH2PO4 irradiated by a proton beam. Increase in the hydrogen bond length was indicated by the dielectric constant analysis. Deuteron nuclear magnetic resonance (NMR) measurements of the electric field gradient tensor showed atomic displacement after the proton irradiation, and 31P NMR measurements of the chemical shift tensor revealed phosphorous displacement in the hydrogen-bonded direction and the PO4 tetrahedral distortion. Increase of the phase transition temperature can be closely related to the structural modification involving the hydrogen-bond geometry.
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77.80.B- Phase transitions and Curie point
61.80.Jh Ion radiation effects
76.60.Cq Chemical and Knight shifts
77.22.Ch Permittivity (dielectric function)

Conductivity spectroscopy in aromatic polyimide from 200 to 400 °C

Sombel Diaham, Marie-Laure Locatelli, and Thierry Lebey

Appl. Phys. Lett. 91, 122913 (2007); http://dx.doi.org/10.1063/1.2789288 (3 pages) | Cited 10 times

Online Publication Date: 20 September 2007

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Dielectric relaxation spectroscopy experiments have been performed in a polyimide (PI) in order to measure its electrical conductivity from 200 to 400 °C. The high temperature static (dc) conductivity in PI appears as superimposed by electrode polarization due to the building up of thin space-charge capacitor layers at the bulk-electrode interfaces of the metal-insulator-metal structure making the conduction phenomenon difficult to identify in dielectric spectra. However, the dynamic (ac) conductivity plot versus frequency allows for an approximation of the dc conductivity in PI which was reported here up to 400 °C with values reaching 10−6 Ω−1 m−1 at 400 °C.
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77.55.-g Dielectric thin films
73.61.Ph Polymers; organic compounds
73.61.Ng Insulators
73.40.Rw Metal-insulator-metal structures
77.84.Jd Polymers; organic compounds
77.22.Gm Dielectric loss and relaxation

Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures

Y. Y. Zhu, Z. B. Fang, S. Chen, C. Liao, Y. Q. Wu, Y. L. Fan, and Z. M. Jiang

Appl. Phys. Lett. 91, 122914 (2007); http://dx.doi.org/10.1063/1.2787896 (3 pages) | Cited 5 times

Online Publication Date: 21 September 2007

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Fowler-Nordheim (FN) tunneling of holes in metal-Er2O3–Si structures is confirmed. The effective mass of holes in Er2O3 films is estimated ranging from 0.068m to 0.092m, where m is the free electron mass. The film shows a high breakdown electric field of about 70 MV/cm for an Er2O3 film thickness of 8.5 nm, implying that the film which is epitaxially grown on Si substrate has smooth interface and surface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
77.55.-g Dielectric thin films
79.70.+q Field emission, ionization, evaporation, and desorption

Thickness-driven antiferroelectric-to-ferroelectric phase transition of thin PbZrO3 layers in epitaxial PbZrO3/Pb(Zr0.8Ti0.2)O3 multilayers

Ksenia Boldyreva, Lucian Pintilie, Andriy Lotnyk, I. B. Misirlioglu, Marin Alexe, and Dietrich Hesse

Appl. Phys. Lett. 91, 122915 (2007); http://dx.doi.org/10.1063/1.2789401 (3 pages) | Cited 13 times

Online Publication Date: 21 September 2007

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Show Abstract
Epitaxial antiferroelectric/ferroelectric PbZrO3/PbZr0.8Ti0.2O3 multilayers were grown on SrRuO3-electroded SrTiO3(100) substrates by pulsed laser deposition. Polarization-field and switching current-voltage curves show a mixed antiferroelectric-ferroelectric behavior of the multilayers with an individual layer thickness above 10 nm, whereas below 10 nm the multilayers show only ferroelectric behavior. Clearly the PbZrO3 layers thinner than 10 nm experienced a transition into the ferroelectric state. X-ray diffraction reciprocal space mapping showed a corresponding orthorhombic-to-rhombohedral transition of the PbZrO3 layers. The observations are discussed in terms of the influence of strain.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
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