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Applied Physics Letters / Volume 91 / Issue 13 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 91, 132907 (2007); http://dx.doi.org/10.1063/1.2790478 (3 pages)

Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation

J.-P. Manceau1, S. Bruyere1, S. Jeannot1, A. Sylvestre2, and P. Gonon3

1STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France
2Grenoble Electrical Engineering Laboratory (G2ELab), French National Research Center (CNRS), National Institute of Polytechnique Grenoble (INPG), Joseph Fourier University (UJF), 25 avenue des Martyrs, BP 166, 38042 Grenoble Cedex 9, France
3Microelectronics Technology Laboratory (LTM), French National Research Center (CNRS), Joseph Fourier University (UJF), CEA/Leti/D2NT, 17 avenue des Martyrs, 38054 Grenoble, France

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(Received 14 August 2007; accepted 7 September 2007; published online 26 September 2007)

Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

alumina, capacitors, high-k dielectric thin films, MIM devices, tantalum compounds, vacancies (crystal)

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2790478

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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