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24 Sep 2007

Volume 91, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 132501 (2007); http://dx.doi.org/10.1063/1.2786856 (3 pages)

V. Rose, X. M. Cheng, D. J. Keavney, J. W. Freeland, K. S. Buchanan, B. Ilic, and V. Metlushko
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A quasidistributed fiber optic sensor for solute concentration measurement based on Fresnel reflection

Yi Ting Wu, Xu Guang Huang, and Hui Su

Appl. Phys. Lett. 91, 131101 (2007); http://dx.doi.org/10.1063/1.2790375 (3 pages) | Cited 4 times

Online Publication Date: 24 September 2007

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A quasidistributed fiber sensor for solute concentration measurement based on Fresnel reflection from fiber tips and the interrogation of an arrayed waveguide grating is presented. Thin-film filters are utilized to achieve the possibility of wavelength-division-multiplexing distributed sensing. The experimental results can be fitted to a linear equation very well, with a value of R2 larger than 0.993. The quasidistributed sensor exhibits a capability for real-time, remote measurement of concentrations with high precision, and offers a solid structure, low cost, and easy implementation.
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07.60.Vg Fiber-optic instruments
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis

Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 μm wavelength region) by selective-area growth

D. Zhou, S. Anantathanasarn, P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, T. de Vries, E. Smalbrugge, and R. Nötzel

Appl. Phys. Lett. 91, 131102 (2007); http://dx.doi.org/10.1063/1.2790378 (3 pages) | Cited 9 times

Online Publication Date: 24 September 2007

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The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual and single QDs with wavelength tuned into the 1.55 μm telecom region by insertion of ultrathin GaAs interlayers beneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Controlled modification of erbium lifetime in silicon dioxide with metallic overlayers

Jiming Bao, Nanfang Yu, Federico Capasso, Thomas Mates, Mariano Troccoli, and Alexey Belyanin

Appl. Phys. Lett. 91, 131103 (2007); http://dx.doi.org/10.1063/1.2785134 (3 pages) | Cited 8 times

Online Publication Date: 24 September 2007

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The authors report systematic measurements of the lifetime of the 1.54 μm transition of erbium implanted at different energies in SiO2 films coated with different metals (titanium and chromium). The lifetime shows a strong reduction (up to a factor of 20) with decreasing distance between the erbium and the metal overlay. Their experiments combined with rigorous theoretical modeling demonstrate that a high degree of control over the radiative properties of erbium can be achieved in erbium-implanted materials in a wide range of implantation energies.
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78.55.Hx Other solid inorganic materials
82.30.-b Specific chemical reactions; reaction mechanisms
61.72.uf Ge and Si

High-order harmonic generation from plasma plume pumped by 400 nm wavelength laser

Rashid A. Ganeev, Luc B. Elouga Bom, and Tsuneyuki Ozaki

Appl. Phys. Lett. 91, 131104 (2007); http://dx.doi.org/10.1063/1.2783480 (3 pages) | Cited 7 times

Online Publication Date: 24 September 2007

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The authors present their study on high-order harmonic generation pumped by 400 nm wavelength laser from plasma plumes produced on the surfaces of various solid-state targets. The maximum harmonic cutoff was observed for Be plasma (31st harmonic, λ = 12.9 nm). They compared these results with harmonic generation pumped by 800 nm wavelength laser. The authors demonstrated single harmonic enhancement for Cr, Sn, Sb, and Mn plasmas. They also studied the use of varying the chirp of the pump laser to control the enhancement of single harmonics within the plateau.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.Ph X-ray, γ-ray, and particle generation
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Low operating voltage bright organic light-emitting diode using iridium complex doped in 4,4′-bis[N-1-napthyl-N-phenyl-amino]biphenyl

J. Wang, Y. D. Jiang, J. S. Yu, S. L. Lou, and H. Lin

Appl. Phys. Lett. 91, 131105 (2007); http://dx.doi.org/10.1063/1.2790493 (3 pages) | Cited 22 times

Online Publication Date: 25 September 2007

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A low driving voltage organic light-emitting diode using a yellow phosphor bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′] iridium (acetylacetonate) as a dopant and 4,4′-bis[N-1-napthyl-N-phenyl-amino]biphenyl as a host was fabricated. The device without p- or n-doped transporting layer shows a turn-on voltage as low as 2.45 V, and a luminance of 1000 cd/m2 at 4.3 V. A maximum luminance of 23 230 cd/m2 at 10 V was achieved. The decrease of the device turn-on voltage may result from direct charge carrier trapping in the dopant and hole only transporting characteristic of the host material. Both charge carrier trapping and energy transfer mechanisms were found in the electroluminescence process.
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85.60.Jb Light-emitting devices

Single-mode laser action in quantum cascade lasers with spiral-shaped chaotic resonators

Ross Audet, Mikhail A. Belkin, Jonathan A. Fan, Benjamin G. Lee, Kai Lin, Federico Capasso, Evgenii E. Narimanov, David Bour, Scott Corzine, Jintian Zhu, and Gloria Höfler

Appl. Phys. Lett. 91, 131106 (2007); http://dx.doi.org/10.1063/1.2784290 (3 pages) | Cited 19 times

Online Publication Date: 25 September 2007

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The authors have fabricated and characterized quantum cascade lasers with spiral-shaped microresonators. The lasers operate in pulsed mode at room temperature with peak optical power greater than 20 mW and in continuous wave at temperatures up to 125 K. They exhibit single-mode emission in both pulsed mode and continuous wave operation, with a 30 dB side-mode suppression ratio at injection currents well above threshold. Subthreshold spectral measurements indicate that the spiral cavities support whispering-gallery-like modes. Single-mode lasing occurs on one of these modes. Far-field profiles reveal enhanced directionality compared to microdisk lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Magnetotunable left-handed material consisting of yttrium iron garnet slab and metallic wires

Hongjie Zhao, Ji Zhou, Qian Zhao, Bo Li, Lei Kang, and Yang Bai

Appl. Phys. Lett. 91, 131107 (2007); http://dx.doi.org/10.1063/1.2790500 (3 pages) | Cited 40 times

Online Publication Date: 26 September 2007

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A magnetotunable left-handed material (LHM) consisting of yttrium iron garnet (YIG) slab and metallic wires has been demonstrated by experiments and simulations. The left-handed passband through the LHM can be dynamically and continuously tuned in a wide frequency region by an applied magnetic field. The tunability of the passband is attributed to that of the negative permeability induced by ferromagnetic resonance in the YIG slab. The authors proposed a convenient means to design tunable LHM based on the ferromagnetic materials as an alternative to tunable split ring resonators.
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42.70.-a Optical materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Intersubband Raman laser from GaInAs/AlInAs double quantum wells

Maxi Scheinert, Hans Sigg, Soichiro Tsujino, Marcella Giovannini, and Jérôme Faist

Appl. Phys. Lett. 91, 131108 (2007); http://dx.doi.org/10.1063/1.2790781 (3 pages) | Cited 4 times

Online Publication Date: 26 September 2007

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We demonstrate optically pumped GaInAs/AlInAs based intersubband lasers operating at a wavelength of ∼ 5.5 μm applying a simple three-level design. Using a subnanosecond long pulsed excitation laser tunable over the linewidth of the transition from the first level to the third level E13, Raman shift in the lasing spectra was observed. Lasing output power of ∼ 14 W and an internal conversion efficiency between pump and intersubband laser of ∼ 1.3% at 70 K is observed.
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42.55.Ye Raman lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Strategies for employing surface plasmons in a near field transmission optical readout system

Choon How Gan and Greg Gbur

Appl. Phys. Lett. 91, 131109 (2007); http://dx.doi.org/10.1063/1.2789388 (3 pages) | Cited 3 times

Online Publication Date: 26 September 2007

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Strategies to manipulate the surface plasmon-enhanced transmission in a near field optical readout system to achieve super-resolution are investigated. Our numerical simulations demonstrate that modulation and confinement of the plasmon-assisted effects in the readout system can be accomplished through appropriately placed “plasmon pits.” It is found from the simulation results that using short metallic strips embedded in a thin dielectric film instead of a thin metal film for the data structure can aid in localizing the plasmonic effects, thereby improving the resolution of the readout system. In the simulated geometries considered, resolution up to ∼ λ/5 is achievable.
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42.79.Vb Optical storage systems, optical disks
78.68.+m Optical properties of surfaces

Ultrafast optical image processing based on third-harmonic generation in organic thin films

Canek Fuentes-Hernandez, Shuo-Yen Tseng, Daniel Owens, and Bernard Kippelen

Appl. Phys. Lett. 91, 131110 (2007); http://dx.doi.org/10.1063/1.2790826 (3 pages) | Cited 1 time

Online Publication Date: 26 September 2007

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We report on the use of the noncollinear third-harmonic generation in an amorphous polymer film operating in the eye safe and telecommunication compatible near-infrared range to perform ultrafast all-optical two-dimensional (2D) image processing at 1550 nm using 100 fs pulses. The background-free and nondegenerate outputs at 517 nm are easily spatially filtered and detected with low cost electronic components. We describe this Fourier transform based technique and demonstrate its application to the classical problem of 2D image recognition.
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42.30.Sy Pattern recognition
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters

Gap solitons in optically induced two-dimensional square photonic lattices in LiNbO3:Fe crystals

Xinyuan Qi, Simin Liu, Guoquan Zhang, Ru Guo, Zhaohong Liu, Lipeng Zhou, and Yuan Li

Appl. Phys. Lett. 91, 131111 (2007); http://dx.doi.org/10.1063/1.2793629 (3 pages) | Cited 3 times

Online Publication Date: 27 September 2007

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We fabricated two-dimensional square photonic lattices with a backbone structure in self-defocusing LiNbO3:Fe crystals through optical induction. We systematically observed four kinds of gap solitons and their power spectra in the nonlinear photonic lattices. Our results show that the lightwave is confined more tightly when it is launched into a low-index region at the input face of the crystal than when it is launched into a backbone ridge waveguide.
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37.10.De Atom cooling methods
37.10.Gh Atom traps and guides
42.65.Tg Optical solitons; nonlinear guided waves

Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

Bin Hua, Junichi Motohisa, Ying Ding, Shinjiroh Hara, and Takashi Fukui

Appl. Phys. Lett. 91, 131112 (2007); http://dx.doi.org/10.1063/1.2787895 (3 pages) | Cited 9 times

Online Publication Date: 27 September 2007

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The authors present the formation of Fabry-Pérot cavity in single GaAs nanowire prepared by selective-area metal organic vapor phase epitaxy. The grown nanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAs nanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAs nanowires were also observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.07.-b Nanoscale materials and structures: fabrication and characterization
42.79.Gn Optical waveguides and couplers

Temperature and pressure dependence of the recombination processes in 1.5 μm InAs/InP (311)B quantum dot lasers

N. F. Massé, E. Homeyer, I. P. Marko, A. R. Adams, S. J. Sweeney, O. Dehaese, R. Piron, F. Grillot, and S. Loualiche

Appl. Phys. Lett. 91, 131113 (2007); http://dx.doi.org/10.1063/1.2790777 (3 pages) | Cited 9 times

Online Publication Date: 27 September 2007

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The threshold current and its radiative component in 1.5 μm InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T0 ≈ 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm

Li Fan, Chris Hessenius, Mahmoud Fallahi, Jörg Hader, Hongbo Li, Jerome V. Moloney, Wolfgang Stolz, Stephan W. Koch, James T. Murray, and Robert Bedford

Appl. Phys. Lett. 91, 131114 (2007); http://dx.doi.org/10.1063/1.2790838 (3 pages) | Cited 19 times

Online Publication Date: 27 September 2007

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We develop and demonstrate a multiwatt highly strained InGaAs/GaAs vertical-external-cavity surface-emitting laser with a free lasing wavelength of around 1170 nm. This laser can be tuned from ∼ 1147 to ∼ 1197 nm. This low-cost compact wavelength agile laser can potentially provide high-power coherent light in a wide yellow-orange band by the intracavity frequency doubling.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Optically nonlinear effects in intersubband transitions of GaN/AlN-based superlattice structures

Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, Fabien Guillot, Sylvain Leconte, and Eva Monroy

Appl. Phys. Lett. 91, 131115 (2007); http://dx.doi.org/10.1063/1.2793190 (3 pages) | Cited 16 times

Online Publication Date: 27 September 2007

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We report optically nonlinear processes related to near-infrared intersubband transitions in short period GaN/AlN superlattices. The strong piezo- and pyroelectric effects in this material lead to intrinsic asymmetries in the electronic potential of the superlattice, and thus to strong nonlinearities of the optical susceptibility. Because of the large intersubband transition energy of nearly 1 eV and the short lifetime of excited electrons in the upper quantum state, these nonlinear effects can be exploited for the fabrication of room temperature operated high-frequency detectors in the telecommunication wavelength range. At the same time, saturation effects due to resonant two-photon absorption could be observed.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.An Optical susceptibility, hyperpolarizability
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.70.+a Pyroelectric and electrocaloric effects

A double filtering method for measuring the translational velocity of fluorescently stained cells

Toshiki Yasokawa, Ichirou Ishimaru, Shigeki Kuriyama, Tsutomu Masaki, Kaoru Takegawa, and Naotaka Tanaka

Appl. Phys. Lett. 91, 131116 (2007); http://dx.doi.org/10.1063/1.2793695 (3 pages)

Online Publication Date: 28 September 2007

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The authors propose a double filtering method to measure translational velocity for tracking fluorescently stained cells. This method employs two diffraction gratings installed in the infinity space through which the parallel pencil beam of the fluorescence passes. With this method, the change in light intensity whose period is proportional to the translational velocity of the sample can be obtained at the imaging surface. By using a sample that has a random distribution of fluorescence intensity, the authors verified that translational velocity measurements could be achieved using the proposed method.
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87.17.Jj Cell locomotion, chemotaxis
06.30.Gv Velocity, acceleration, and rotation
42.79.Dj Gratings
87.64.Cc Scattering of visible, uv, and infrared radiation
87.64.K- Spectroscopy

Surface encapsulation for low-loss silicon photonics

M. Borselli, T. J. Johnson, C. P. Michael, M. D. Henry, and O. Painter

Appl. Phys. Lett. 91, 131117 (2007); http://dx.doi.org/10.1063/1.2793820 (3 pages) | Cited 8 times

Online Publication Date: 28 September 2007

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Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500 nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-band-gap silicon surface states and hydrogen in the capping material.
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42.82.Gw Other integrated-optical elements and systems
72.40.+w Photoconduction and photovoltaic effects
78.30.Hv Other nonmetallic inorganics
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
73.20.At Surface states, band structure, electron density of states

Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs

G. R. Nash, S. J. Smith, S. D. Coomber, S. Przeslak, A. Andreev, P. Carrington, M. Yin, A. Krier, L. Buckle, M. T. Emeny, and T. Ashley

Appl. Phys. Lett. 91, 131118 (2007); http://dx.doi.org/10.1063/1.2793821 (3 pages) | Cited 4 times

Online Publication Date: 28 September 2007

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The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ∼ 3.5 μm, threshold current density of 115 A/cm2, and with a characteristic temperature T0 ∼ 51 K.
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42.55.Px Semiconductor lasers; laser diodes

A polymer-stabilized single-layer color cholesteric liquid crystal display with anisotropic reflection

Shin-Ying Lu and Liang-Chy Chien

Appl. Phys. Lett. 91, 131119 (2007); http://dx.doi.org/10.1063/1.2790499 (3 pages) | Cited 32 times

Online Publication Date: 28 September 2007

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The authors report a method of fabricating single-layer color cholesteric liquid crystal displays from a polymer-stabilized cholesteric liquid crystal. The reflective wavelength can be electrically switched to reflect blue or green from a cell initially reflecting a red color. The color change is a result of the compression to the helical pitches in planar layers in response to the applied voltage. The unique feature of the polymer stabilization is in the fact that the electrically switched colors preserve good reflectivity and the colors are reversible with voltage ramping. Conspicuously, the polymer-stabilized cholesteric display exhibits anisotropic reflection and has a temperature independent of reflected color.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems

Optical parametric generation in periodically poled KTiOPO4 via extended phase matching

Ye Pu, Jie Wu, Mankei Tsang, and Demetri Psaltis

Appl. Phys. Lett. 91, 131120 (2007); http://dx.doi.org/10.1063/1.2790825 (3 pages) | Cited 2 times

Online Publication Date: 28 September 2007

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We report an experimental demonstration of optical parametric generation in a periodically poled KTiOPO4 crystal based on the principle of mirrorless optical parametric oscillation. A femtosecond pump pulse spectrally centered at 792 nm from a Ti:sapphire amplifier is prechirped to minimize Kerr effects. The pump pulse is then injected into the nonlinear crystal and down converted to signal and idler pulses, approximately centered at 1584 nm, via amplified spontaneous parametric down conversion in a copropagating type-II quasiphase matching configuration. The maximum internal downconversion efficiency is 43%, the highest ever reported for optical parametric generators based on KTiOPO4 crystals. Such a device may find applications in optical signal processing and biological imaging.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Lm Parametric down conversion and production of entangled photons

Fano resonance mediated by intersubband-phonon coupling

H. C. Liu, C. Y. Song, Z. R. Wasilewski, J. A. Gupta, and M. Buchanan

Appl. Phys. Lett. 91, 131121 (2007); http://dx.doi.org/10.1063/1.2790845 (3 pages) | Cited 3 times

Online Publication Date: 28 September 2007

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We present direct experimental evidence of Fano resonance mediated by intersubband and phonon coupling in a specially designed GaAs/AlGaAs quantum-well infrared photodetector. This work presents an approach for realizing quantum interference in an artificially designed structure and opens possibilities for making use of Fano resonance in infrared devices.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
68.35.Ja Surface and interface dynamics and vibrations
68.47.Fg Semiconductor surfaces
78.67.De Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Quantum cascade lasers operating from 1.2 to 1.6 THz

Christoph Walther, Milan Fischer, Giacomo Scalari, Romain Terazzi, Nicolas Hoyler, and Jérôme Faist

Appl. Phys. Lett. 91, 131122 (2007); http://dx.doi.org/10.1063/1.2793177 (3 pages) | Cited 88 times

Online Publication Date: 28 September 2007

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Two terahertz quantum cascade lasers based on GaAs/Al0.1Ga0.9As heterostructures are reported. Pulsed mode operation up to 84 K and continuous wave (cw) power of 0.36 mW at 10 K are demonstrated for the laser which emits from 1.34 to 1.58 THz. The other laser shows emission from 1.2 to 1.32 THz with pulsed mode operation up to 69 K and cw power of 0.12 mW at 10 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
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