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Appl. Phys. Lett. 91, 173118 (2007); http://dx.doi.org/10.1063/1.2802567 (3 pages)

Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (n11)

P. M. Lytvyn1, V. V. Strelchuk1, O. F. Kolomys1, I. V. Prokopenko1, M. Ya. Valakh1, Yu. I. Mazur2, Zh. M. Wang2, G. J. Salamo2, and M. Hanke3

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev 03028, Ukraine
2Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
3Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Hoher Weg 8, D-06120 Halle/Saale, Germany

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(Received 7 June 2007; accepted 5 October 2007; published online 25 October 2007)

We have investigated lateral self-assembling in In0.4Ga0.6As/GaAs quantum dot (QD) multilayers, which were grown by molecular beam epitaxy on GaAs(100) and (n11)B substrates with n = 9,8,7,5,4,3. The lateral self-assembling and the QD size distribution have been studied by atomic force microscopy depending on substrate orientation and the number of periods within the multilayers. The observed two-dimensional ordering can be described by a centered rectangular surface unit cell. Derived autocorrelation functions exhibit the most pronounced lateral QD assembling along the elastically soft directions [mathn0]. This can be attributed to elastic interaction, the particular elastic anisotropy of the high index substrates, and the minimization of the strain energy.

© 2007 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 81.16.Dn

    Self-assembly

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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