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29 Oct 2007

Volume 91, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 91, 183501 (2007); http://dx.doi.org/10.1063/1.2801554 (3 pages)

Aurelien Du Pasquier, Daniel D. T. Mastrogiovanni, Lauren A. Klein, Tong Wang, and Eric Garfunkel
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ZnO-based thin film transistors having high refractive index silicon nitride gate

K. Remashan, J. H. Jang, D. K. Hwang, and S. J. Park

Appl. Phys. Lett. 91, 182101 (2007); http://dx.doi.org/10.1063/1.2804566 (3 pages) | Cited 17 times

Online Publication Date: 29 October 2007

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The effect of properties of silicon nitride films on the electrical performance of zinc oxide (ZnO) thin film transistors (TFTs) has been investigated by utilizing silicon nitride films having refractive indices of 2.45 and 1.85. The ZnO TFTs having a silicon nitride with a high refractive index of 2.45 exhibited a field effect mobility of 8 cm2/V s, on/off current ratio of 106, and subthreshold slope of 0.9 V/decade. On the other hand, TFTs having a silicon nitride with a low refractive index of 1.85 showed a field effect mobility of 0.5 cm2/V s, on/off current ratio of less than 102, and subthreshold slope of 19 V/decade. The improved device performance was ascribed to a better interface between ZnO and high refractive index silicon nitride, and hydrogenation of the ZnO channel with the hydrogen originated from the high refractive index silicon nitride.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors

The mechanism study on transport properties in perovskite oxide p-n junctions

Peng Han, Kui-juan Jin, Hui-bin Lu, Qing-Li Zhou, Yue-Liang Zhou, and Guo-Zhen Yang

Appl. Phys. Lett. 91, 182102 (2007); http://dx.doi.org/10.1063/1.2804608 (3 pages) | Cited 22 times

Online Publication Date: 30 October 2007

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The drift-diffusion mechanism, the interband Zener tunneling theory, and the trap assisted tunneling model are combined to reveal the transport properties in a multicorrelated system of the p-La0.9Sr0.1MnO3/n-SrNb0.01Ti0.99O3 junction with various temperatures. The good agreement between the calculated and measured I-V curves reveal that the drift-diffusion mechanism dominates the transport process with forward bias, and the interband Zener tunneling plays an important role for the carrier transport with high reverse bias. In the low reverse bias, the I-V characteristic of oxide device is mainly attributed to the trap assisted tunneling process caused by the oxygen vacancy induced states.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
73.40.Gk Tunneling
66.30.-h Diffusion in solids

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN/AlGaN short period superlattice

O. Lopatiuk-Tirpak, L. Chernyak, B. A. Borisov, V. V. Kuryatkov, S. A. Nikishin, and K. Gartsman

Appl. Phys. Lett. 91, 182103 (2007); http://dx.doi.org/10.1063/1.2805190 (3 pages)

Online Publication Date: 30 October 2007

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Minority carrier diffusion length in a p-type Mg-doped AlN/Al0.08Ga0.92N short period superlattice was shown to undergo a multifold and persistent (for at least 1 week) increase under continuous irradiation by low-energy beam of a scanning electron microscope. Since neither the diffusion length itself nor the rate of its increase exhibited any measurable temperature dependence, it is concluded that this phenomenon is attributable to the increase in mobility of minority electrons in the two-dimensional electron gas, which in turn is limited by defect scattering. Cathodoluminescence spectroscopy revealed ∼ 40% growth of carrier lifetime under irradiation with an activation energy of 240 meV.
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73.63.-b Electronic transport in nanoscale materials and structures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.82.Fk Semiconductors
61.80.Fe Electron and positron radiation effects
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.60.Hk Cathodoluminescence, ionoluminescence

Series resistance imaging of solar cells by voltage dependent electroluminescence

David Hinken, Klaus Ramspeck, Karsten Bothe, Bernhard Fischer, and Rolf Brendel

Appl. Phys. Lett. 91, 182104 (2007); http://dx.doi.org/10.1063/1.2804562 (3 pages) | Cited 18 times

Online Publication Date: 31 October 2007

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This letter introduces a method based on electroluminescence imaging to determine mappings of the local series resistance of large area semiconductor devices such as solar cells. The method combines the local electroluminescence emission Φi(U) and its derivative Φi′(U) with respect to the applied voltage U. The combined analysis of these two quantities yields the local series resistance Rise and proves the physical validity of the used current transport model and thus the physical relevance of the determined Rise value. The method is verified on a monocrystalline silicon solar cell with local shunts and local series resistance problems.
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78.60.Fi Electroluminescence
81.05.Cy Elemental semiconductors
84.60.Jt Photoelectric conversion

Route to a correct description of the fundamental properties of cubic InN

M. Briki, A. Zaoui, F. Boutaiba, and M. Ferhat

Appl. Phys. Lett. 91, 182105 (2007); http://dx.doi.org/10.1063/1.2805223 (3 pages) | Cited 6 times

Online Publication Date: 31 October 2007

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The main fundamental properties of the cubic InN are studied within the density functional theory. We used the full-potential augmented plane wave method with two different exchange-correlation potentials, the Perdew-Wang (PW) and the Engel-Vosko (EV) approximations, in both cases nonrelativistic and relativistic. We found that the PW and relativistic approximations give a metallic ground state. The use of the EV and nonrelativistic approximations gives, however, a semiconductor phase with a band-gap value of 0.57 eV, which is in fairly good agreement with the recent measurement of 0.61 eV.
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71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Nr Semiconductor compounds
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Nonalloyed Cr/Au-based Ohmic contacts to n-GaN

Ming-Lun Lee, Jinn-Kong Sheu, and C. C. Hu

Appl. Phys. Lett. 91, 182106 (2007); http://dx.doi.org/10.1063/1.2803067 (3 pages) | Cited 24 times

Online Publication Date: 31 October 2007

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Nonalloyed Cr/Au-based metal contacts to n-GaN have been demonstrated. The deposited Au/Cr/n-GaN contacts exhibited a specific contact resistance (ρc) of approximately 5.6×10−5 Ω cm2. Although the nonalloyed Ti/Al-based contacts to n-GaN can also exhibit a comparable ρc value, their thermal stability is inferior to the Cr/Au-based contacts. This could be attributed to the fact that Al tends to ball up during thermal annealing. Thus, the surface morphology of most of the annealed Ti/Al-based contacts was quite rough, and the contacts became rectified when they were annealed at a temperature below 700 °C. However, the annealed Cr/Au-based contacts exhibited an Ohmic characteristic and had a smooth surface when annealing temperatures did not exceed 700 °C. In addition, the thermal stability could be further improved by inserting a Pt layer between the Cr and Au layers. This scheme could prevent the diffusion of Au into the Cr layer, thus preventing Au from reaching the Cr/GaN interface where it could form a possible Ga–Au phase, which would degrade the Ohmic contacts.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
81.05.Ea III-V semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Carrier transport mechanisms of the writing and the erasing processes for Al/ZnO nanoparticles embedded in a polyimide layer/p-Si diodes

J. H. Jung, H. J. Kim, B. J. Kim, T. W. Kim, and Y.-H. Kim

Appl. Phys. Lett. 91, 182107 (2007); http://dx.doi.org/10.1063/1.2803754 (3 pages) | Cited 6 times

Online Publication Date: 1 November 2007

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Capacitance-voltage measurements on Al/ZnO nanocrystals embedded in polyimide (PI) layer/p-Si diodes at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift. Current-voltage (I-V) measurements on the diodes showed that carrier transport processes were attributed to the Poole-Frenkel effect and to thermionic emission. Possible carrier transport mechanisms of the writing and the erasing processes for the Al/ZnO nanocrystals embedded in PI layer/p-Si diodes are described on the basis of the I-V results.
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84.30.Sk Pulse and digital circuits
73.63.Bd Nanocrystalline materials
73.61.Ga II-VI semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Direct measurement of topography-dependent charging of patterned oxide/semiconductor structures

G. S. Upadhyaya, J. L. Shohet, and J. B. Kruger

Appl. Phys. Lett. 91, 182108 (2007); http://dx.doi.org/10.1063/1.2805023 (3 pages) | Cited 7 times

Online Publication Date: 2 November 2007

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Electron shading, or topography-dependent charging, occurs during plasma exposure of wafers with high-aspect-ratio features due to an imbalance between the electron and ion currents that reach the feature bottoms. High-aspect-ratio pit structures were exposed to an electron cyclotron resonance plasma. The surface potential of the structures after plasma exposure was measured with scanning surface-potential microscopy (SSPM). The results show that SSPM can be used to measure the differential charging in a high-aspect-ratio pit. In situ depletion of the plasma-induced charge with ultraviolet radiation was time resolved using SSPM. A circuit model is used to explain the experimental results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.Ps Atomic force microscopy (AFM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.47.Fg Semiconductor surfaces
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.30.+q High-frequency effects; plasma effects
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