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29 Oct 2007

Volume 91, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 91, 183501 (2007); http://dx.doi.org/10.1063/1.2801554 (3 pages)

Aurelien Du Pasquier, Daniel D. T. Mastrogiovanni, Lauren A. Klein, Tong Wang, and Eric Garfunkel
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Erratum: “Vibrational and electrical properties of hexagonal La2O3 films” [ Appl. Phys. Lett. 91, 102901 (2007) ]

G. Scarel, A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli

Appl. Phys. Lett. 91, 189901 (2007); http://dx.doi.org/10.1063/1.2811709 (1 page)

Online Publication Date: 31 October 2007

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99.10.Cd Errata
73.61.Ng Insulators
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Erratum: “Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates” [ Appl. Phys. Lett. 91, 063127 (2007) ]

J. Parsons, E. H.C. Parker, D. R. Leadley, R. J.H. Morris, T. J. Grasby, and A. D. Capewell

Appl. Phys. Lett. 91, 189902 (2007); http://dx.doi.org/10.1063/1.2798244 (1 page) | Cited 1 time

Online Publication Date: 2 November 2007

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Abstract Unavailable
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99.10.Cd Errata
81.05.Cy Elemental semiconductors
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
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