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Applied Physics Letters / Volume 91 / Issue 19 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 91, 192108 (2007); http://dx.doi.org/10.1063/1.2806912 (3 pages)

Self-separated freestanding GaN using a NH4Cl interlayer

Hyun-Jae Lee1, S. W. Lee1, H. Goto1, Sang-Hyun Lee1, Hyo-Jong Lee1, J. S. Ha1, Takenari Goto1, M. W. Cho1, T. Yao1, and Soon-Ku Hong2

1Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan
2School of Nano Science and Technology, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea

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(Received 10 May 2007; accepted 18 October 2007; published online 8 November 2007)

Thick GaN films were grown on void buffer layer by hydride vapor phase epitaxy. The void-buffer layers were consisted of NH4Cl, GaN dots, and low-temperature (LT) GaN buffer layer. Instead of GaN, NH4Cl was easily synthesized in NH3 and HCl atmospheres by simply lowering the growth temperature to 500 °C, and LT GaN buffer growth was followed during increasing substrate temperature to 600 °C. The LT GaN buffer acted as a protecting layer against evaporation of the NH4Cl and a seeding layer for the high temperature (HT) GaN. The NH4Cl layer between a sapphire substrate with GaN dots and the LT GaN buffer were fully evaporated during the HT GaN growth at 1040 °C. Many voids were formed at interface caused by evaporation of the NH4Cl layer, which strongly assisted self-separation of thick HT GaN during cooldown after the growth resulting in a 200 μm thick freestanding (FS) GaN. The FS GaN showed smooth surface morphology and absence of any crack. The a-axis and c-axis lattice constants of FS GaN were 3.189 and 5.185 Å, respectively, which well agrees with those of strain-free bulk GaN. The observed donor-bound exciton emission peak at 3.4718 eV agreed with the peak position of bulk GaN. All these features indicate that the obtained FS GaN through the self-separation process is nearly strain-free.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

buffer layers, excitons, gallium compounds, III-V semiconductors, lattice constants, photoluminescence, semiconductor epitaxial layers, semiconductor growth, surface morphology, vacuum deposition, vapour phase epitaxial growth, voids (solid), wide band gap semiconductors

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 68.55.A-

    Nucleation and growth

  • 78.55.Cr

    III-V semiconductors

  • 78.66.Fd

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2806912

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. R. Tavernier and D. R. Clarke, J. Appl. Phys. 89, 1527 (2001)JAPIAU000089000003001527000001.

    K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa, J. Appl. Phys. 79, 3487 (1996)JAPIAU000079000007003487000001.

    W. Shan, R. J. Hauenstein, A. J. Fischer, J. J. Song, W. G. Perry, M. D. Bremser, R. F. Davis, and B. Goldenberg, Phys. Rev. B 54, 13460 (1996).

    B. J. Skromme, K. C. Palle, C. D. Poweleit, H. Yamane, M. Aoki, and F. J. Disalvo, Appl. Phys. Lett. 81, 3765 (2002)APPLAB000081000020003765000001.


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