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5 Nov 2007

Volume 91, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 91, 191106 (2007); http://dx.doi.org/10.1063/1.2804016 (3 pages)

A. Pikulin, N. Bityurin, G. Langer, D. Brodoceanu, and D. Bäuerle
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Time dependent plasma properties during microarcing in radio frequency plasmas

Y. Yin, S. Y. Allan, M. M. M. Bilek, and D. R. McKenzie

Appl. Phys. Lett. 91, 191501 (2007); http://dx.doi.org/10.1063/1.2806186 (3 pages) | Cited 1 time

Online Publication Date: 6 November 2007

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We report experimental results for time dependent plasma properties during microarcing in a rf plasma system. A cutoff discriminator bias voltage can be defined as a parameter representing plasma potential. The cutoff voltage during the microarcing does not exactly follow the dependence of floating potential. The plasma/ion density increases significantly after microarc initiation and then reduces slowly. We propose that a significant number of electrons enter the plasma in the initial period of the microarc and gain very high energy. These high energy electrons lose their energy through a relatively slower process of collisions while generating a significantly higher plasma density.
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52.25.-b Plasma properties
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

M. Toledano-Luque, M. L. Lucía, A. del Prado, E. San Andrés, I. Mártil, and G. González-Díaz

Appl. Phys. Lett. 91, 191502 (2007); http://dx.doi.org/10.1063/1.2811958 (3 pages) | Cited 7 times

Online Publication Date: 9 November 2007

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High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The formation of Si–O bonds after the sputtering of the HfO2 film in O2 atmosphere was observed by infrared spectroscopy. Optical diagnosis of the plasma demonstrated a high density of O radicals in the system when working with O2. The small radius and high reactivity of these O radicals are the source of the SiN oxidation. However, the structure of the SiN film is preserved during Ar sputtering.
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81.15.Cd Deposition by sputtering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics

Modified configuration of relativistic magnetron with diffraction output for efficiency improvement

M. Daimon and W. Jiang

Appl. Phys. Lett. 91, 191503 (2007); http://dx.doi.org/10.1063/1.2803757 (3 pages) | Cited 10 times

Online Publication Date: 9 November 2007

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A modified configuration of relativistic magnetron with diffraction output has been proposed in order to improve microwave conversion efficiency. In this configuration, the microwave output coupling between the magnetron cavity and the cylindrical waveguide is significantly improved. Three-dimensional particle-in-cell simulations using simulation-code MAGIC were carried out to demonstrate the effectiveness of the modified configuration. In the simulation results, the maximum microwave efficiency of ∼ 37% has been obtained, compared with that of ∼ 3% obtained with conventional configuration.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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