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2 Jul 2007

Volume 91, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 91, 013501 (2007); http://dx.doi.org/10.1063/1.2753120 (3 pages)

J. Verd, A. Uranga, G. Abadal, J. Teva, F. Torres, F. Pérez-Murano, J. Fraxedas, J. Esteve, and N. Barniol
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Resistance switching in the metal deficient-type oxides: NiO and CoO

Hisashi Shima, Fumiyoshi Takano, Hiro Akinaga, Yukio Tamai, Isao H. Inoue, and Hide Takagi

Appl. Phys. Lett. 91, 012901 (2007); http://dx.doi.org/10.1063/1.2753101 (3 pages) | Cited 53 times

Online Publication Date: 2 July 2007

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The resistance switching properties in Pt/Ni–O/Pt and Pt/Co–O/Pt synthesized by the magnetron sputtering have been investigated. The oxygen partial pressure during sputtering and the post-thermal process are crucial to forming of the trilayer. By investigating x-ray photoemission spectroscopy spectra, the increase of initial resistance in Ni–O was caused by the variation of the stoichiometry, while that in the Co–O was accompanied by the phase transformation between CoO and Co3O4. The resistance switching in Pt/Co–O/Pt and Pt/Ni–O/Pt exhibits the analogous electrode area and temperature dependences. As a result of the I-V measurements at the elevated temperature, the assistance of Joule heating in the reset process is implied.
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73.40.Sx Metal-semiconductor-metal structures
79.60.Jv Interfaces; heterostructures; nanostructures

Suppression of silicidation and crystallization by atmosphere controlled annealing for poly-crystalline silicon/HfO2/SiO2/Si gate stack structures

H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda

Appl. Phys. Lett. 91, 012902 (2007); http://dx.doi.org/10.1063/1.2753106 (3 pages) | Cited 1 time

Online Publication Date: 3 July 2007

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The suppression of silicidation and crystallization of gate dielectrics for polycrystalline-Si/HfO2/SiO2/Si gate sack structures by controlling annealing ambient has been investigated using photoemission and x-ray absorption spectroscopy. It is found that both silicidation and crystallization are suppressed by a mixture gas (nitrogen and oxygen) annealing. Meanwhile, by nitrogen annealing at the same partial pressure, both silicidation and crystallization occur. In the case of oxygen annealing, silicidation does not occur while only crystallization occurs. From these results, it is concluded that nitrogen and oxygen gases play a role of preventing silicidation and crystallization, respectively.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.70.Dm X-ray absorption spectra

Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

Chel-Jong Choi, Moon-Gyu Jang, Yark-Yeon Kim, Myung-Sim Jun, Tae-Youb Kim, and Myeong-Ho Song

Appl. Phys. Lett. 91, 012903 (2007); http://dx.doi.org/10.1063/1.2753720 (3 pages) | Cited 9 times

Online Publication Date: 3 July 2007

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The authors investigate the electrical and structural properties of high-k Er-silicate film formed by the interfacial reaction between Er and SiO2 films. The increase in rapid thermal annealing temperature leads to the reduction of the interface trap density by one order of magnitude, indicating the improvement in the interface quality of Er-silicate gate dielectric. The increased capacitance value of Er-silicate gate dielectric with thermal treatment is attributed in part to the reduction of SiO2 thickness and to the increase in the relative dielectric constant of Er-silicate film caused by the chemical bonding change from Si-rich to Er-rich silicate.
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73.40.Ns Metal-nonmetal contacts
77.55.-g Dielectric thin films
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.82.Ms Insulators
77.22.Ch Permittivity (dielectric function)
61.50.Lt Crystal binding; cohesive energy

Strain induced internal potentials of compositionally graded epitaxial ferroelectric thin films

G. Akcay, S. Zhong, B. S. Allimi, S. P. Alpay, and J. V. Mantese

Appl. Phys. Lett. 91, 012904 (2007); http://dx.doi.org/10.1063/1.2754358 (3 pages) | Cited 11 times

Online Publication Date: 3 July 2007

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Compositionally graded ferroelectrics produce internal potentials that manifest themselves as asymmetric hysteresis in polarization versus applied field plots. The direction and magnitude of the built-in fields depend on the sense of the chemical gradient in unclamped graded ferroelectrics. A thermodynamic model was employed to understand how these potentials would be affected by an inhomogeneous internal strain in epitaxial compositionally graded ferroelectric structures. The analysis indicates that the strain field can be employed to control both the magnitude and direction of the internal potentials. Indeed, the sense of the polarization gradient may be completely reversed with the appropriate strain gradient.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.60.Bs Mechanical and acoustical properties
77.22.Ej Polarization and depolarization

Magnetoelectric relaxor

A. Levstik, V. Bobnar, C. Filipič, J. Holc, M. Kosec, R. Blinc, Z. Trontelj, and Z. Jagličić

Appl. Phys. Lett. 91, 012905 (2007); http://dx.doi.org/10.1063/1.2754354 (3 pages) | Cited 24 times

Online Publication Date: 5 July 2007

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The site and charge disordered solid solution 0.8Pb(Fe1/2Nb1/2)O3–0.2Pb(Mg1/2W1/2)O3 is a magnetoelectric relaxor which shows broad and frequency dependent maxima both in the electric as well as in the magnetic susceptibilities. The Vogel-Fulcher-type electric relaxor freeze-out is accompanied by a significant magnetic anomaly demonstrating magnetoelectric coupling. Thus, a magnetoelectric effect is observed in a system exhibiting only mesoscopic and no long range order.
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75.80.+q Magnetomechanical effects, magnetostriction
75.30.Cr Saturation moments and magnetic susceptibilities
77.80.-e Ferroelectricity and antiferroelectricity

Local strain-induced 90° domain switching in a barium titanate single crystal

J.-H. Park, J. Park, K.-B. Lee, T.-Y. Koo, H. S. Youn, Y. D. Ko, J.-S. Chung, J. Y. Hwang, and S.-Y. Jeong

Appl. Phys. Lett. 91, 012906 (2007); http://dx.doi.org/10.1063/1.2753761 (3 pages) | Cited 4 times

Online Publication Date: 5 July 2007

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Local strain analysis for a BaTiO3 single crystal under electric loads was conducted using x-ray microdiffraction technique. During the polarization reversal, local 90° domain switchings were observed at certain positions instead of uniform 180° domain switching. Field-dependent strain analysis demonstrated that inhomogeneous domain switching was strongly related to local strain distributions. The results can be understood in terms of competition between elastic and electrostatic energies and provide a crystallographic evidence for the role of local strains on 90° domain switching.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

Kyung Min Kim, Byung Joon Choi, Yong Cheol Shin, Seol Choi, and Cheol Seong Hwang

Appl. Phys. Lett. 91, 012907 (2007); http://dx.doi.org/10.1063/1.2749846 (3 pages) | Cited 117 times

Online Publication Date: 6 July 2007

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The filamentary resistance switching mechanism of a Pt/40 nm TiO2/Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3–10 nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.
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73.61.Ng Insulators
73.40.Rw Metal-insulator-metal structures
77.22.Jp Dielectric breakdown and space-charge effects
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