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2 Jul 2007

Volume 91, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 91, 013501 (2007); http://dx.doi.org/10.1063/1.2753120 (3 pages)

J. Verd, A. Uranga, G. Abadal, J. Teva, F. Torres, F. Pérez-Murano, J. Fraxedas, J. Esteve, and N. Barniol
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Preparation and photoinduced wettability conversion of superhydrophobic β-Ga2O3 nanowire film

L. Y. Gao, M. J. Zheng, M. Zhong, M. Li, and L. Ma

Appl. Phys. Lett. 91, 013101 (2007); http://dx.doi.org/10.1063/1.2753545 (3 pages) | Cited 2 times

Online Publication Date: 2 July 2007

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High-yield uniform β-Ga2O3 nanowire films with mesh structure on GaP substrate have been synthesized via heat treating porous GaP preevaporated Au under low vacuum. The single-crystalline β-Ga2O3 nanowires have uniform diameters of about 100 nm and a preferential [001] growth direction along the axis. The as-prepared β-Ga2O3 nanowire film reveals a superhydrophobic property. The remarkable photoinduced surface wettability conversion at β-Ga2O3 nanowire film was found, which can be explained by the cooperation of the surface photosensitivity and the special nanostructure.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
68.08.Bc Wetting
81.40.Gh Other heat and thermomechanical treatments

Local dielectric spectroscopy of polymer films

P. S. Crider, M. R. Majewski, Jingyun Zhang, H. Oukris, and N. E. Israeloff

Appl. Phys. Lett. 91, 013102 (2007); http://dx.doi.org/10.1063/1.2753539 (3 pages) | Cited 21 times

Online Publication Date: 2 July 2007

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A noncontact scanning probe microscopy method of probing local frequency-dependent dielectric spectroscopy is described. Dielectric spectra can be measured with this technique from 0.01 to 100 Hz, in nanometer-scale near-surface regions of materials. The technique is applied to polymer films (polyvinyl acetate), in order to determine if polymer glassy dynamics are altered near a free surface. A small reduction in glass transition temperature and a moderate narrowing of the distribution of relaxation times are found within 20 nm of a free surface.
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73.61.Ph Polymers; organic compounds
77.84.Jd Polymers; organic compounds
77.55.-g Dielectric thin films
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Carbon nanochannels elaborated by buckle delamination control on patterned substrates

J. Tranchant, B. Angleraud, X. L. Han, J. P. Landesman, and P. Y. Tessier

Appl. Phys. Lett. 91, 013103 (2007); http://dx.doi.org/10.1063/1.2753536 (3 pages)

Online Publication Date: 2 July 2007

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Carbon nanochannels were achieved using lithographically patterned lines on a silicon substrate as a template to control the buckle delamination of highly equibiaxial compressively stressed thin films. Carbon films were synthesized by ionized physical vapor deposition through inductively coupled plasma magnetron sputtering. The obtained structures exhibit dimensions as small as 500 nm wide and 80 nm high, and may be used in nanofluidic applications. Results regarding the characterization of their growth mechanism and structural analyses by Raman microspectroscopy are presented.
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81.07.Bc Nanocrystalline materials
81.15.Cd Deposition by sputtering
61.46.-w Structure of nanoscale materials
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

Phase change nanodot arrays fabricated using a self-assembly diblock copolymer approach

Yuan Zhang, H.-S. Philip Wong, Simone Raoux, Jennifer N. Cha, Charles T. Rettner, Leslie E. Krupp, Teya Topuria, Delia J. Milliron, Philip M. Rice, and Jean L. Jordan-Sweet

Appl. Phys. Lett. 91, 013104 (2007); http://dx.doi.org/10.1063/1.2753699 (3 pages) | Cited 13 times

Online Publication Date: 2 July 2007

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Self-assembling diblock copolymer, polystyrene-b-poly-4-vinylpyridine (PS-b-P4VP), was used as the template for fabricating phase change nanostructures. The high density GeSb nanodots were formed by etching into an amorphous GeSb thin film using silica hard mask which was patterned on top of polymer. The nanodot arrays are 15 nm in diameter with 30 nm spacing. This is smaller than most structures obtained by e-beam lithography. Time-resolved x-ray diffraction studies showed that the phase transition occurred at 235 °C, which is 5 °C lower than blanket GeSb film but higher than that of Ge2Sb2Te5 (150 °C). GeSb showed good temperature stability for fabrication of small memory devices.
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81.16.Dn Self-assembly
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
64.70.K- Solid-solid transitions

Single crystalline ZnMgO pleated nanosheets and quasinanotubes

J. R. Wang, Z. Z. Ye, H. P. He, L. P. Zhu, J. Jiang, and Y. J. Zeng

Appl. Phys. Lett. 91, 013105 (2007); http://dx.doi.org/10.1063/1.2752027 (3 pages) | Cited 2 times

Online Publication Date: 3 July 2007

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ZnMgO pleated nanosheets and quasinanotubes were synthesized in the same region on Si substrate using [Mg(H2O)6](NO3)2 and zinc diethyl as the reactant source. The nanosheets are periodically pleated with the angles of 120° and 60° between two adjacent pleats. Some of the nanosheets fold into quasinanotubes. Homoepitaxial interconnections are observed at the boundaries of the pleats, and the whole pleated nanosheet is a single wurtzite crystal. The growth mechanism is discussed, which is proposed to be a combination of vapor-solid process of two-dimensional growth of the (math2math0) planes and their random along the 〈10math0〉 directions.
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81.05.Dz II-VI semiconductors
81.07.De Nanotubes
81.07.Bc Nanocrystalline materials
61.46.Fg Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing

Secondary growth of small ZnO tripodlike arms on the end of nanowires

Zengxing Zhang, Yuzi Liu, Dongfang Liu, Shudong Luo, Jun Shen, Lifeng Liu, Wenjun Ma, Yan Ren, Yanjuan Xiang, Weiya Zhou, Sishen Xie, Kaihong Zheng, Yuanchun Zhao, Lianfeng Sun, Chenxia Zou, et al.

Appl. Phys. Lett. 91, 013106 (2007); http://dx.doi.org/10.1063/1.2752605 (3 pages)

Online Publication Date: 3 July 2007

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Small zinc oxide tripodlike arms were assembled at the end of nanowires through thermal evaporation of zinc powder in a horizontal tube furnace. These arms are hundreds of nanometers in length, and they are tens of nanometers in diameter, similar to that of the based nanowires. High-resolution transmission electron microscopy investigation exhibits that they are wurtzite structure and have clear twin planes at the junction of the arms and the based nanowires. The growth mechanism, Raman, and photoluminescence properties were discussed.
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81.05.Dz II-VI semiconductors
81.07.Vb Quantum wires
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.65.La Quantum wires (patterned in quantum wells)
78.67.Lt Quantum wires
78.55.Et II-VI semiconductors

Magnetotransport properties of nanocrystalline Pr0.65(Ca1−ySry)0.35MnO3 (y ∼ 0.4,0.3): Influence of phase coexistence

Anis Biswas and I. Das

Appl. Phys. Lett. 91, 013107 (2007); http://dx.doi.org/10.1063/1.2753709 (3 pages) | Cited 13 times

Online Publication Date: 3 July 2007

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The influence of the coexistence of charge ordered insulating and ferromagnetic metallic phases on magnetotransport properties of nanocrystalline Pr0.65(Ca1−ySry)0.35MnO3 (y ∼ 0.4,0.3) has been studied. Large magnetoresistance at low magnetic field has been observed. The sharp increase of low field magnetoresistance with increase of temperature below the insulator to metal transition temperature is in complete contrast to the magnetoresistive properties of ferromagnetic manganite nanoparticles. The anomalous magnetoresistive behavior is attributed to the destabilization of the charge ordered insulating state by the magnetic field.
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75.47.Lx Magnetic oxides
73.63.Bd Nanocrystalline materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.50.Tt Fine-particle systems; nanocrystalline materials

Growth and enhanced emission of silicon-germanium hemisphere shell arrays

Zhipeng Huang and Jing Zhu

Appl. Phys. Lett. 91, 013108 (2007); http://dx.doi.org/10.1063/1.2753725 (3 pages) | Cited 2 times

Online Publication Date: 3 July 2007

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Silicon-germanium (SiGe) alloy nanocrystals have been fabricated and assembled into hemisphere shell arrays by a method combining pulsed laser deposition and nanosphere lithography. Monolayer and double layer hemisphere shell arrays are fabricated. The hemisphere shell arrays remarkably enhance the photoluminescence intensity of SiGe, compared to that from unpatterned sample. The enhancement, as high as approximately 700 times, is obtained in double layer hemisphere shell arrays. Characterization of samples by scanning electron microscope and transmission electron microscope reveals that the enhancement and difference in photoluminescence spectra are mainly due to the unique optical structure of hemisphere shell arrays.
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81.07.Bc Nanocrystalline materials
81.05.Hd Other semiconductors
81.16.Nd Micro- and nanolithography
81.16.Mk Laser-assisted deposition
78.55.Hx Other solid inorganic materials
61.46.Hk Nanocrystals

Quantum-confinement effect in individual Ge1−xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy

Yoshiaki Nakamura, Akiko Masada, and Masakazu Ichikawa

Appl. Phys. Lett. 91, 013109 (2007); http://dx.doi.org/10.1063/1.2753737 (3 pages) | Cited 22 times

Online Publication Date: 3 July 2007

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The authors observed a quantum-confinement effect in individual Ge1−xSnx quantum dots (QDs) on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy at room temperature. The quantum-confinement effect was featured by an increase in the energy band gap of ∼ 1.5 eV with a decrease in QD diameter from 35 to 4 nm. The peaks for quantum levels of QDs became broader with a decrease in the height-diameter aspect ratio of QDs, demonstrating the gradual emergence of two dimensionality in density of states of quasi zero-dimensional QDs with the QD flattening.
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73.21.La Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)

Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for high electron mobility transistor fabrication

S. D. Park, C. K. Oh, W. S. Lim, H. C. Lee, J. W. Bae, G. Y. Yeom, T. W. Kim, J. I. Song, and J. H. Jang

Appl. Phys. Lett. 91, 013110 (2007); http://dx.doi.org/10.1063/1.2754636 (3 pages) | Cited 5 times

Online Publication Date: 5 July 2007

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Highly selective, low damage atomic layer etching (ALET) technology was developed for dry gate recess during the fabrication of InGaAs/InP/InAlAs high electron mobility transistors lattice matched to InP substrates. Etching characteristics of InP layer on top of InAlAs layer and the surface chemistry of the exposed InAlAs layer were investigated by utilizing angular resolved x-ray photoelectron spectroscopy. Finally, InAlAs Schottky diodes were fabricated by utilizing chlorine-based ALET technology and conventional Ar-based dry recess and their electrical characteristics were compared. By using the ALET, the etch selectivity as high as 70:1 was achieved for InP over InAlAs heterostructures and the stoichiometric modification of InAlAs was observed to be negligible after the recess etch process. Schottky diodes fabricated after the ALET exhibited the lower ideality factor and the higher Schottky barrier height compared to those fabricated with Ar-based plasma etching.
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85.30.Kk Junction diodes
85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning

Direct measurement of two-dimensional and three-dimensional interprecipitate distance distributions from atom-probe tomographic reconstructions

Richard A. Karnesky, Dieter Isheim, and David N. Seidman

Appl. Phys. Lett. 91, 013111 (2007); http://dx.doi.org/10.1063/1.2753097 (3 pages) | Cited 7 times

Online Publication Date: 6 July 2007

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Edge-to-edge interprecipitate distance distributions are critical for predicting precipitation strengthening of alloys and other physical phenomena. A method to calculate this three-dimensional distance and the two-dimensional interplanar distance from atom-probe tomographic data is presented. It is applied to nanometer-sized Cu-rich precipitates in an Fe-1.7 at. % Cu alloy. Experimental interprecipitate distance distributions are discussed.
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64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Three-dimensional isocompositional profiles of buried SiGe/Si(001) islands

G. Katsaros, M. Stoffel, A. Rastelli, O. G. Schmidt, K. Kern, and J. Tersoff

Appl. Phys. Lett. 91, 013112 (2007); http://dx.doi.org/10.1063/1.2752730 (3 pages) | Cited 9 times

Online Publication Date: 6 July 2007

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The authors investigate the composition profile of SiGe islands after capping with Si to form quantum dots, using a two step etching procedure and atomic force microscopy. Initially, the Si capping layers are removed by etching selectively Si over Ge and then the composition of the disclosed islands is addressed by selectively etching Ge over Si. For samples grown at 580 °C the authors show that even when overgrowth leads to a flat Si surface and the islands undergo strong morphological changes, a Ge-rich core region is still preserved in the dot. At high growth and overgrowth temperatures (740 °C), the experiments show that the newly formed base of the buried islands is more Si rich than their top. Furthermore, the authors find that for the growth conditions used, no lateral motion takes place during capping.
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61.72.S- Impurities in crystals
68.65.Hb Quantum dots (patterned in quantum wells)
81.65.Cf Surface cleaning, etching, patterning
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