Effect of Yb concentration on the resistivity and lifetime of CdTe:Ge:Yb codoped crystals

Sochinskii, N. V.; Abellán, M.; Rodríguez-Fernández, J.; Saucedo, E.; Ruiz, C. M.; Bermúdez, V.

doi:doi:10.1063/1.2815644

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Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Electron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in heavily V-doped 4H-SiC, vanadium is responsible for the SI behavior, whereas in moderately V-doped substrates, the SI properties are thermally unstable and determined by intrinsic defects. We show that the commonly observed thermal activation energy Ea ∼ 1.1 eV in V-d...

Water passivation effect on polycrystalline silicon nanowires

Defects present in the grain boundaries of polycrystalline materials are known to impede carrier transport inside the materials, and the electronic device performance having such materials as active channels will be adversely affected. In this work, dramatic improvement in device performance was observed as field-effect transistors with polycrystalline silicon nanowire (poly-SiNW) channels were exposed to a wet environment. Passivation of defects in the poly-SiNW by H+ and/or OH− contained in t...

The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that the effect of Yb concentration is crucial for accurate electrical compensation. It is also demonstrated that the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be a promising way to obtain semiinsulating CdTe crystals with good transport properties. High resistivity (5×10⁹ Ω cm) and lifetime (9 μs) were obtained, thus confirming the beneficial effect of rare-earth doping.

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KEYWORDS and PACS

Keywords

cadmium compounds, carrier lifetime, doping profiles, electrical resistivity, germanium, II-VI semiconductors, ytterbium

PACS

72.80.Ey

III-V and II-VI semiconductors
72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping

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http://dx.doi.org/10.1063/1.2815644

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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