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19 Nov 2007

Volume 91, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 91, 212501 (2007); http://dx.doi.org/10.1063/1.2813047 (3 pages)

M. V. Milošević, G. R. Berdiyorov, and F. M. Peeters
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Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications

Shih-Ching Chen, Ting-Chang Chang, Po-Tsun Liu, Yung-Chun Wu, Chin-Cheng Ko, Sidney Yang, Li-Wei Feng, S. M. Sze, Chun-Yen Chang, and Chen-Hsin Lien

Appl. Phys. Lett. 91, 213101 (2007); http://dx.doi.org/10.1063/1.2813621 (3 pages) | Cited 5 times

Online Publication Date: 19 November 2007

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In this work, we studied a pi-shape gate polycrystalline silicon thin-film transistor (poly-Si TFT) with silicon-oxide-nitride-oxide-silicon (SONOS) layers and nanowire channels for the application of electric driver and nonvolatile memory. The proposed pi-gate TFT-SONOS has superior transfer characteristics and its output characteristic also exhibits the high driving current and the suppression of the kink effect. For memory application, the device can provide high program/erase efficiency and large threshold voltage shift under adequate bias operation. The enhanced performance for the pi-gate TFT-SONOS is attributed to the larger effective channel width and the number of channel corners.
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85.30.Tv Field effect devices

In situ investigation of the liquid/solid interface of a block copolymer solution under shear stress using microbeam grazing-incidence small-angle x-ray scattering

Andreas Timmann, Stephan Volkher Roth, Steffen Fischer, and Stephan Förster

Appl. Phys. Lett. 91, 213102 (2007); http://dx.doi.org/10.1063/1.2815929 (3 pages) | Cited 2 times

Online Publication Date: 19 November 2007

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An aqueous solution of poly(isoprene55-block-ethylene oxide170) was investigated at different temperatures combining rheometry in plate/plate-geometry and microbeam grazing incidence small-angle x-ray scattering. In the vicinity of the rotator plate, we were able to separate the bulk scattering of the solution from the grazing incident signal stemming of the interface and to determine a thickness of an interface layer at the liquid-solid interface. We followed the thickness of the interface layer in situ as a function of shear rate. This kind of measurements can be important to decide if the first micellar layer sicks or slips at the surface under shear.
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82.70.Dd Colloids
62.10.+s Mechanical properties of liquids
68.08.De Liquid-solid interface structure: measurements and simulations
78.70.Ck X-ray scattering

Single-electron quantum dot in Si/SiGe with integrated charge sensing

C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, and M. A. Eriksson

Appl. Phys. Lett. 91, 213103 (2007); http://dx.doi.org/10.1063/1.2816331 (3 pages) | Cited 33 times

Online Publication Date: 20 November 2007

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Single-electron occupation is an essential component to the measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge sensing from an integrated quantum point contact, and this charge sensing is used to confirm single-electron occupancy in the quantum dot.
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73.63.Kv Quantum dots
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Coupling between surface plasmons via thermal emission of a dielectric layer sandwiched between two metal periodic layers

Ming-Wei Tsai, Chia-Yi Chen, Yu-Wei Jiang, Yi-Han Ye, Hsu-Yu Chang, Tzu-Hung Chuang, and Si-Chen Lee

Appl. Phys. Lett. 91, 213104 (2007); http://dx.doi.org/10.1063/1.2779964 (3 pages) | Cited 3 times

Online Publication Date: 20 November 2007

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Metal/SiO2/metal trilayer thermally generated infrared emitters with different top and bottom periodic metal arrangements were fabricated and their emission spectra were measured. The coupling mechanisms of surface plasmon polaritons at top and bottom periodic metal structures were characterized. It is found that the top surface plasmon converted to light radiation directly, whereas the bottom surface plasmon can radiate out when its emission peak position matches that of the top surface plasmon. This opens the way to fabricate the high temperature operated, narrow bandwidth, and multiwavelength infrared light source.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Anisotropic polarizability of isolated semiconducting single-wall carbon nanotubes in alternating electric fields

J. A. Fagan, V. Bajpai, B. J. Bauer, and E. K. Hobbie

Appl. Phys. Lett. 91, 213105 (2007); http://dx.doi.org/10.1063/1.2807850 (3 pages) | Cited 4 times

Online Publication Date: 21 November 2007

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We measure the linear dichroism for aqueous suspensions of isolated semiconducting single-wall carbon nanotubes (SWCNTs) in alternating electric fields. The field-induced alignment of length-purified SWCNTs is determined from the anisotropy of the first and second interband optical transitions for the (6,5) semiconducting species. At 3 kHz, the effective anisotropic polarizability of the DNA-wrapped SWCNTs is of order 10−28 F m2, comparable to that of a high-aspect-ratio conducting rod, but a factor of 5 larger than that of gold colloidal rods and an order of magnitude larger than that of tobacco mosaic virus.
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78.67.Ch Nanotubes
78.20.Fm Birefringence
82.70.Kj Emulsions and suspensions
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