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19 Nov 2007

Volume 91, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 91, 212501 (2007); http://dx.doi.org/10.1063/1.2813047 (3 pages)

M. V. Milošević, G. R. Berdiyorov, and F. M. Peeters
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High strength and high electrical conductivity in bulk nanograined Cu embedded with nanoscale twins

Y. Zhang, Y. S. Li, N. R. Tao, and K. Lu

Appl. Phys. Lett. 91, 211901 (2007); http://dx.doi.org/10.1063/1.2816126 (3 pages) | Cited 9 times

Online Publication Date: 20 November 2007

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A bulk nanograined Cu sample embedded with nanoscale twins is produced by means of dynamic plastic deformation at cryogenic temperatures. It exhibits a tensile yield strength of 610 MPa and an electrical conductivity of 95% IACS at room temperature. The unique combination of a high strength and a high conductivity is primarily attributed to the presence of a considerable amount of nanoscale twins which strengthen the material significantly while having a negligible influence on electrical conductivity.
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73.63.Bd Nanocrystalline materials
81.07.Bc Nanocrystalline materials
61.72.Mm Grain and twin boundaries
81.40.Lm Deformation, plasticity, and creep

Energy transfer in porous-silicon/laser-dye composite evidenced by polarization memory of photoluminescence

A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida

Appl. Phys. Lett. 91, 211902 (2007); http://dx.doi.org/10.1063/1.2814051 (3 pages) | Cited 8 times

Online Publication Date: 20 November 2007

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The optical properties of nanocomposites are studied for rhodamine B (RhB) dye molecules embedded in nanoscale porous silicon (PS) and porous silica (P-silica). The samples are prepared by simple immersion of porous matrix substrates in RhB solutions. Fourier transform infrared spectroscopy suggests that RhB molecules fully penetrate into the porous matrix. Efficient photoluminescence has been observed in all experimental nanocomposites. The measurement of the polarization memory (PM) effect provides a clear evidence for the presence of an excitation energy transfer from PS to RhB molecules, in contrast to the PM behavior in RhB/P-silica composite.
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81.16.-c Methods of micro- and nanofabrication and processing
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.-m Photoluminescence, properties and materials
78.30.-j Infrared and Raman spectra
42.55.Mv Dye lasers

Clustering of aromatic rings in near-frictionless hydrogenated amorphous carbon films probed using multiwavelength Raman spectroscopy

R. Arenal and A. C. Y. Liu

Appl. Phys. Lett. 91, 211903 (2007); http://dx.doi.org/10.1063/1.2805189 (3 pages) | Cited 12 times

Online Publication Date: 21 November 2007

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Multiwavelength Raman spectroscopy has been used to study the structure of hydrogenated amorphous carbon films synthesized by plasma-enhanced chemical vapor deposition. The analysis of different parameters from the Raman spectra demonstrates that the diameter, structural, and topological orders of the sp2-bonded ring clusters increase with increasing fractions of hydrogen in the source gas. We report the existence of an unusual peak at 867 cm−1 that in such extended clusters of aromatic rings, could correspond to a graphitic mode activated by a relaxation of the phonon selection-rule resulting from defects.
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61.43.-j Disordered solids
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.-w Optical properties of specific thin films
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
63.50.-x Vibrational states in disordered systems

Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

M. Kryśko, G. Franssen, T. Suski, M. Albrecht, B. Łucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, and P. Perlin

Appl. Phys. Lett. 91, 211904 (2007); http://dx.doi.org/10.1063/1.2815921 (3 pages) | Cited 13 times

Online Publication Date: 21 November 2007

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The influence of the miscut angle of GaN substrate on compositional and optical properties of InxGa1−xN epilayers (0.05<x<0.1) was examined using x-ray diffraction, photoluminescence (PL), cathodoluminescence, and Z-contrast scanning electron microscopy. We show that single atomic steps bunch during growth of InGaN and form macrosteps. Indium is incorporated differently at treads and risers of these macrosteps, which causes the layer to decompose and induces the formation of compositional growth striations. Since the growth step density increases with growing miscut angle of the substrate, the average indium concentration decreases and the average PL peak energy blueshifts and broadens with increasing miscut angle. The presented work enables understanding on microscopic scale effects related to the inhomogeneous distribution of indium in InGaN layers on miscut substrates, which is significant from the point of view of optoelectronic applications.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.Nq Composition and phase identification
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
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