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Applied Physics Letters / Volume 91 / Issue 23 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 91, 233108 (2007); http://dx.doi.org/10.1063/1.2818692 (3 pages)

Raman fingerprint of charged impurities in graphene

C. Casiraghi1, S. Pisana1, K. S. Novoselov2, A. K. Geim2, and A. C. Ferrari3

1Engineering Department, Cambridge University, Cambridge CB3 OFA United Kingdom
2Department of Physics and Astronomy, Manchester University, Manchester M13 9PL, United Kingdom
3Engineering Department, Cambridge University, Cambridge CB3 OFA, United Kingdom

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(Received 19 September 2007; accepted 7 November 2007; published online 5 December 2007)

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage. This reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ∼ 1013 cm−2 are estimated from the G peak shift and width and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on a scale of less than 1 μm.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon, impurity distribution, Raman spectra

PACS

  • 78.30.Na

    Fullerenes and related materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2818692

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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