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3 Dec 2007

Volume 91, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 232101 (2007); http://dx.doi.org/10.1063/1.2818712 (3 pages)

T. Kita, D. Chiba, Y. Ohno, and H. Ohno
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Epitaxial stabilization and structural properties of REMnO3 (RE = Dy,Gd,Sm) compounds in a layered, hexagonal ABO3 structure

K. R. Balasubramaniam, S. Havelia, P. A. Salvador, H. Zheng, and J. F. Mitchell

Appl. Phys. Lett. 91, 232901 (2007); http://dx.doi.org/10.1063/1.2819606 (3 pages) | Cited 10 times

Online Publication Date: 3 December 2007

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REMnO3 (RE = Dy,Gd,Sm) films were deposited on (110) surfaces of single crystalline hexagonal (h-)YMnO3. These films adopted the metastable multiferroic h-REMnO3 structure instead of the stable perovskite structure. Sharp (hh0) diffraction peaks with narrow rocking curves were found for all films. The peak widths increased with increasing size of the rare-earth cation. The c-axis/a-axis lattice parameter decreased/increased monotonically with increasing rare-earth size for these epitaxial films. All films exhibited the following epitaxial relationship {110}REMnO3‖{110}YMnO3;〈1math0〉REMnO3‖〈1math0〉YMnO3. The single-phase hexagonal films were kinetically robust against back transformation to the stable perovskite structure even to thicknesses of 50 nm.
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61.66.Fn Inorganic compounds

ac and dc electro-optical response of planar aligned liquid crystal cells

F. Ciuchi, A. Mazzulla, A. Pane, and J. Adrian Reyes

Appl. Phys. Lett. 91, 232902 (2007); http://dx.doi.org/10.1063/1.2819619 (3 pages) | Cited 4 times

Online Publication Date: 3 December 2007

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Interaction of static electric fields with a nematic is complicated because of the presence of charges, which originates from aligning layers or from molecular breakdown, affecting the electro-optic response of a liquid crystal cell. We analyze the aligning layers effect on the electro-optical response and develop a model based on a description of the ion balance on the conducting plates taking into account both drift current and saturation effects due to the ion migration inside the cell, neglecting diffusion current. The model well agrees with data for low voltages, while for higher ones, diffusion current should be taken into account.
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78.20.Jq Electro-optical effects
42.70.Df Liquid crystals
61.30.-v Liquid crystals

Seed-layer mediated orientation evolution in dielectric Bi–Zn–Ti–Nb–O thin films

Jin Young Kim, Jun Hong Noh, Sangwook Lee, Sung-Hun Yoon, Chin Moo Cho, Kug Sun Hong, Hyun Suk Jung, and Jung-Kun Lee

Appl. Phys. Lett. 91, 232903 (2007); http://dx.doi.org/10.1063/1.2806193 (3 pages) | Cited 1 time

Online Publication Date: 3 December 2007

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Highly (hhh)-oriented pyrochlore Bi–Zn–Ti–Nb–O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh)-oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect.
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77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds
68.60.Bs Mechanical and acoustical properties
61.72.Mm Grain and twin boundaries

High frequency piezoresponse force microscopy in the 1-10 MHz regime

K. Seal, S. Jesse, B. J. Rodriguez, A. P. Baddorf, and S. V. Kalinin

Appl. Phys. Lett. 91, 232904 (2007); http://dx.doi.org/10.1063/1.2814971 (3 pages) | Cited 3 times

Online Publication Date: 4 December 2007

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Imaging mechanisms in piezoresponse force microscopy (PFM) in the high frequency regime above the first contact resonance are analyzed. High frequency (HF) imaging enables the effective use of resonance enhancement to amplify weak signals, improves the signal to noise ratio, minimizes the electrostatic contribution to the signal, and improves electrical contact. The limiting factors in HF PFM include inertial stiffening, deteriorating signal transduction, laser spot effects, and the photodetector bandwidth. Analytical expressions for these limits are derived. High-quality PFM operation in the 1–10 MHz frequency range is demonstrated and prospects for imaging in the 10–100 MHz range are discussed.
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07.79.Lh Atomic force microscopes
72.30.+q High-frequency effects; plasma effects
77.65.-j Piezoelectricity and electromechanical effects
85.60.Gz Photodetectors (including infrared and CCD detectors)

Ferroelectric properties of Bi3.6Ho0.4Ti3O12 thin films prepared by sol-gel method

Dongyun Guo, Meiya Li, Jing Wang, Jun Liu, Benfang Yu, and Bin Yang

Appl. Phys. Lett. 91, 232905 (2007); http://dx.doi.org/10.1063/1.2821836 (3 pages) | Cited 14 times

Online Publication Date: 5 December 2007

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The Ho-substituted bismuth titanate [(Bi3.6Ho0.4Ti3O12), (BHT)] thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The microstructure and electrical properties were investigated. The BHT film consists of a single phase of Bi-layered Aurivillius structure. The surface is uniform, smooth, crack-free, and with a dense microstructure. The 600-nm-thick film exhibits 2Pr of 44.2 μC/cm2 and 2Ec of 323.7 kV/cm at 500 kV/cm. After the switching of 4.46×109 cycles, the BHT film shows fatigue-free (only 3% degradation). The dielectric constant and dielectric loss are about 489 and 0.018 at a frequency of 1 MHz, respectively. The BHT film shows good insulating behavior according to the test of leakage current.
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77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
73.61.Ng Insulators

Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability

Ye Chen and Paul C. McIntyre

Appl. Phys. Lett. 91, 232906 (2007); http://dx.doi.org/10.1063/1.2822419 (3 pages) | Cited 4 times

Online Publication Date: 5 December 2007

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We report a comparative study focusing on characterization of the ferroelectric film/top electrode interface and electrical measurements, for nominally identical Pb(Zr,Ti)O3 (PZT) films with either Pt or IrO2 top electrodes. We find that the superior reliability and polarization switching behavior of capacitors with IrO2 top electrodes are associated with the inert nature of lead present near the PZT film surface during top electrode processing. In contrast, lead near the PZT surface reacted with the Pt at the film/Pt-top-electrode interface, possibly creating a stable PbxPt1−x phase, and this reaction appeared to cause thickening of a nonferroelectric layer at the PZT/electrode interface.
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77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization

Effect of electrode material on the resistance switching of Cu2O film

Woo-Young Yang and Shi-Woo Rhee

Appl. Phys. Lett. 91, 232907 (2007); http://dx.doi.org/10.1063/1.2822403 (3 pages) | Cited 21 times

Online Publication Date: 6 December 2007

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The effect of the bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt/Cu2O/bottom electrode). It was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film. Pt, TiN, TaN, and strontium-ruthenium oxide belong to this group. For high Schottky contact, the resistance switching characteristics could not be observed due to a large voltage drop at the rectifying interface with insufficient electric field in the Cu2O film. Also, it was confirmed that interlayer formation from the reaction at the electrode-oxide interface increased the barrier height and brought about the switching failure in the case of Ru. The resistance switching properties depend on the barrier height and the reactivity between metal and Cu2O film.
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77.55.-g Dielectric thin films
72.60.+g Mixed conductivity and conductivity transitions
73.40.Ns Metal-nonmetal contacts
73.61.Ng Insulators

The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Y2O3)-semiconductor transistors by surface treatments

Wen-chieh Shih, Kun-yung Kang, and Joseph Ya-min Lee

Appl. Phys. Lett. 91, 232908 (2007); http://dx.doi.org/10.1063/1.2822809 (3 pages) | Cited 2 times

Online Publication Date: 6 December 2007

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Metal-ferroelectric-insulator-silicon transistors [Fe-field-effect transistors (FeFETs)] with Al/Pb (Zr0.53,Ti0.47) O3/Y2O3/Si structure were fabricated. The wafers were pretreated with H2O2 before Y2O3 deposition and post-treated with HCl after Y2O3 deposition. With both treatments, the drain current ratio after writing pulses of ±8 V with a duration of 100 ns was measured as 105. The leakage current was reduced from 10−3 to 10−6 A/cm2. The FeFETs maintain a threshold voltage window of about 1.5 V after an elapsed time of 5000 s. The improvements are due to the reduction of the leakage current and the charge injection effect at the Y2O3/Si interface.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition

G. D. Hu, X. Cheng, W. B. Wu, and C. H. Yang

Appl. Phys. Lett. 91, 232909 (2007); http://dx.doi.org/10.1063/1.2822826 (3 pages) | Cited 54 times

Online Publication Date: 6 December 2007

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BiFeO3 and Bi1−xGdxFeO3 (BGFO) (x = 0.03, 0.05, 0.07, 0.10, and 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates using a metal organic decomposition process. X-ray diffraction results show that a gradual phase transition from rhombohedral to pseudotetragonal structure may occur in BGFO films with the increase of Gd content. Due to the lower leakage currents resulting from the smaller grain sizes and smoother surfaces, well saturated P-E hysteresis loops, which show weak dependence of frequency in the range of 3–50 kHz, can be observed in all BGFO films at room temperature. The remanent polarization for BGFOx = 0.03 film is about 79 μC/cm2. In addition, no evident fatigue can be observed after 109 switching cycles.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks

G. He, G. W. Meng, L. D. Zhang, and M. Liu

Appl. Phys. Lett. 91, 232910 (2007); http://dx.doi.org/10.1063/1.2813620 (3 pages) | Cited 13 times

Online Publication Date: 7 December 2007

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Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks have been investigated by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE). By means of the chemical shifts of Hf 4f, Si 2p, O 1s, and N 1s core-level spectra, it has been found that the chemical stability of the HfOxNy/SiO2/Si stacks strongly depends on the annealing temperature. Analysis of temperature-dependent band alignment of HfOxNy/SiO2/Si stacks suggests that the valence band offset ΔEv increases slowly from 1.82 eV for as-grown film to 2.55 eV for annealed film at 700 °C; however, the values of conduction band offset ΔEc only demonstrates a slight change in the vicinity of 1.50 eV. From the band offset viewpoint, HfOxNy/SiO2/Si gate stack could be a promising candidate for high-k gate dielectrics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
79.60.Jv Interfaces; heterostructures; nanostructures
76.60.Cq Chemical and Knight shifts
73.20.At Surface states, band structure, electron density of states

Highly tunable SrTiO3/DyScO3 heterostructures for applications in the terahertz range

P. Kužel, F. Kadlec, J. Petzelt, J. Schubert, and G. Panaitov

Appl. Phys. Lett. 91, 232911 (2007); http://dx.doi.org/10.1063/1.2822409 (3 pages) | Cited 21 times

Online Publication Date: 7 December 2007

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Several types of multilayer structures based on SrTiO3 and DyScO3 thin films were prepared by laser ablation. The dielectric properties of these samples without and under applied static or low-frequency electric field at room temperature were determined in the terahertz spectral range by time-domain terahertz spectroscopy. We demonstrate up to 65% variation of the permittivity of SrTiO3 films and up to 33% modulation of the power transmission of terahertz waves at 500 GHz and 100 V (67 kV/cm) bias.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.70.Gq Microwave and radio-frequency interactions

Properties of highly (100) oriented Pb(Mg1/3,Nb2/3)O3–PbTiO3 films on LaNiO3 bottom electrodes

Y. W. Li, Z. G. Hu, F. Y. Yue, G. Y. Yang, W. Z. Shi, X. J. Meng, J. L. Sun, and J. H. Chu

Appl. Phys. Lett. 91, 232912 (2007); http://dx.doi.org/10.1063/1.2822421 (3 pages) | Cited 5 times

Online Publication Date: 7 December 2007

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The 70%Pb(Mg1/3,Nb2/3)O3–30%PbTiO3 (PMNT) films have been fabricated on LaNiO3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation

Effect of nonstoichiometric defects on antiparallel domain formation in LiNbO3

Xiaoyan Liu, Kenji Kitamura, Kazuya Terabe, Huarong Zeng, and Qingrui Yin

Appl. Phys. Lett. 91, 232913 (2007); http://dx.doi.org/10.1063/1.2823585 (3 pages) | Cited 5 times

Online Publication Date: 7 December 2007

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The structures of inverted nanodomains in LiNbO3 crystals were investigated using atomic force microscopy (AFM) combined with piezoresponse force microscopy and atomic force acoustic microscopy. The acoustic and AFM topographic images reflected in domain structures with polarization orientation revealed that unexpected antiparallel domains randomly exist in inverted nanodomains in congruent LiNbO3 but not in near-stoichiometric one. The Gibbs free energy change ΔG associating with the internal field Eint in congruent LiNbO3 was discussed. We propose that nonstoichiometric defects, which caused Eint during polarization reversal, play a key role in formation of antiparallel domains in congruent LiNbO3 crystals.
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77.80.Dj Domain structure; hysteresis
61.66.Bi Elemental solids
61.66.Dk Alloys
61.72.-y Defects and impurities in crystals; microstructure
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
77.22.Ej Polarization and depolarization
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