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Applied Physics Letters / Volume 91 / Issue 24 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 91, 242110 (2007); doi:10.1063/1.2823577 (3 pages)

Percolative effects on noise in pentacene transistors

B. R. Conrad, W. G. Cullen, W. Yan, and E. D. Williams

Department of Physics, University of Maryland, College Park, College Park, Maryland 20742, USA

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(Received 13 October 2007; accepted 19 November 2007; published online 14 December 2007)

Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge’s parameter varies as an inverse power law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

1/f noise, grain boundaries, organic semiconductors, percolation, semiconductor thin films, thin film transistors

PACS

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2823577

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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