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Applied Physics Letters / Volume 91 / Issue 24 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 91, 242111 (2007); http://dx.doi.org/10.1063/1.2824816 (3 pages)

Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, and Akihiko Yoshikawa

Graduate School of Electrical and Electronics Engineering and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

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(Received 23 September 2007; accepted 22 November 2007; published online 14 December 2007)

p-type conductivity control of In- and N-polar InN layers grown on GaN templates with different Mg concentrations ([Mg]) was systematically investigated by using electrolyte-based capacitance-voltage (ECV) analyses. With increasing [Mg], p-type conduction was confirmed for [Mg]s from ∼ 1018 to  ∼ 3×1019 cm−3. The conduction was reversed to n type at [Mg]s above 1020 cm−3, however, due to overdoping effects introducing shallow donors in InN. Further, it was found that charges at the interface states located within forbidden band of InN greatly affected the ECV measurements resulting in overestimation of net acceptor concentrations, and some calibration was necessary to estimate them.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical conductivity, gallium compounds, III-V semiconductors, indium compounds, semiconductor doping, wide band gap semiconductors

PACS

  • 73.61.Ey

    III-V semiconductors

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 73.20.At

    Surface states, band structure, electron density of states

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2824816

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006).

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    X. Wang, S. B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 90, 201903 (2007)APPLAB000090000020201903000001.

    P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. B 75, 115312 (2007).

    J. W. L. Yim, R. E. Jones, K. M. Yu, J. W. Ager III, W. Walukiewicz, W. J. Schaff, and J. Wu, Phys. Rev. B 76, 041303(R) (2007).

    X. Wang, S. B. Che, Y. Ishitani, and A. Yoshikawa, J. Appl. Phys. 99, 073512 (2006)JAPIAU000099000007073512000001.

    A. A. Klochikhin, V. Yu. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 195207 (2005).

    X. Wang, S. B. Che, Y. Ishitani, A. Yoshikawa, H. Sasaki, T. Shinagawa, and S. Yoshida, Appl. Phys. Lett. 91, 081912 (2007)APPLAB000091000008081912000001.


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