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10 Dec 2007

Volume 91, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 91, 241101 (2007); http://dx.doi.org/10.1063/1.2821382 (3 pages)

S. N. Goda, S. Sensarn, M. Y. Shverdin, and G. Y. Yin
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Rapid liquid phase sintered Mn doped BiFeO3 ceramics with enhanced polarization and weak magnetization

Manoj Kumar and K. L. Yadav

Appl. Phys. Lett. 91, 242901 (2007); http://dx.doi.org/10.1063/1.2816118 (3 pages) | Cited 27 times

Online Publication Date: 12 December 2007

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Single-phase BiFe1−xMnxO3 multiferroic ceramics have been synthesized by rapid liquid phase sintering method to study the influence of Mn substitution on their crystal structure, dielectric, magnetic, and ferroelectric behaviors. From XRD analysis it is seen that Mn substitution does not affect the crystal structure of the BiFe1−xMnxO3 system. An enhancement in magnetization was observed for BiFe1−xMnxO3 ceramics. However, the ferooelectric hysteresis loops were not really saturated, we observed a spontaneous polarization of 10.23 μC/cm2 under the applied field of 42 kV/cm and remanent polarization of 3.99 μC/cm2 for x = 0.3 ceramic.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Dj Domain structure; hysteresis
61.66.Fn Inorganic compounds

Analysis of relaxor mechanism and structural distortion for SrBi1.6Nd0.4Nb2O9 bismuth-layer-structured ceramics

Lin Sun, Junhao Chu, Chude Feng, and Lidong Chen

Appl. Phys. Lett. 91, 242902 (2007); http://dx.doi.org/10.1063/1.2824383 (3 pages)

Online Publication Date: 13 December 2007

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The 1/2{h00} and 1/2{hk0} type superlattice reflections in the electron diffraction patterns indicate the presence of ordered polar regions in SrBi1.6Nd0.4Nb2O9. The research of x-ray Rietveld refinement and synchrotron radiation x-ray absorption fine structure spectroscopy determined that Nd3+ replaced Bi3+ in the Bi2O2 layers for SrBi1.6Nd0.4Nb2O9 and the relaxor behavior could be attributed to the disorder of Nd3+ and Bi3+ in the Bi2O2 layers. The tilting angle of NbO6 is obtained by Rietveld refinement method and the refinement result indicates that the substitution of Nd3+ for Bi3+ remarkably decrease the structural distortion, which leads to the lower transition temperature.
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77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.66.Fn Inorganic compounds
78.70.Dm X-ray absorption spectra

Effects of NH3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric

Liang Sun, Yuan Xue, Shi-Jin Ding, Hao-Wen Guo, David Wei Zhang, and Li-Kang Wang

Appl. Phys. Lett. 91, 242903 (2007); http://dx.doi.org/10.1063/1.2824385 (3 pages)

Online Publication Date: 13 December 2007

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Initial reaction mechanisms of atomic layer deposition TaN barrier layer on the different group-terminated SiOC surfaces have been investigated by density functional theory. TaCl5 molecules are hardly absorbed on –CH3 terminated surfaces mostly existing in SiOC dielectrics, which retards a uniform TaN layer growth. After NH3 plasma pretreatment, –NH2 terminated surfaces enhance the chemisorptions of TaCl5 and guarantee ALD TaN reaction sequences to go ahead, thus a uniform TaN barrier layer on SiOC dielectrics can be easily synthesized. In addition, HCl molecules as by-products are easily desorbed to benefit a high quality TaN layer with low Cl contaminations.
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77.55.-g Dielectric thin films
68.43.Mn Adsorption kinetics

Theory of the dielectric nonlinearity in ferroelectric relaxors in the vicinity of the Vogel-Fulcher temperature under dc bias fields

S. Prosandeev, M. Panchelyuga, S. Raevskaya, and I. Raevski

Appl. Phys. Lett. 91, 242904 (2007); http://dx.doi.org/10.1063/1.2824386 (3 pages) | Cited 1 time

Online Publication Date: 13 December 2007

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Usually, dipole glass phase transitions are associated with the divergence of the third harmonic of the dielectric response. We show that, in reality, (i) random fields diffuse this singularity; (ii) even if the random field is absent, the divergence is one sided (it exists only at the temperatures, which are lower than the Vogel-Fulcher temeprature}; (iii) in the latter case, the divergence is followed by a jump of the first and third harmonics; and (iv) if the bias field exceeds the random field, all dielectric anomalies must be seen well.
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77.80.B- Phase transitions and Curie point
77.22.-d Dielectric properties of solids and liquids
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.22.Ch Permittivity (dielectric function)

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

Cédric Sire, Serge Blonkowski, Michael J. Gordon, and Thierry Baron

Appl. Phys. Lett. 91, 242905 (2007); http://dx.doi.org/10.1063/1.2822420 (3 pages) | Cited 21 times

Online Publication Date: 14 December 2007

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The statistics of electrical breakdown field (Ebd) of HfO2 and SiO2 thin films has been evaluated over multiple length scales using macroscopic testing of standardized metal-oxide-semiconductor (TiN/SiO2/Si) and metal-insulator-metal (TiN/HfO2/TiN) capacitors (10−2 mm2–10 μm2 area) on a full 200 mm wafer along with conductive-atomic-force microscopy. It is shown that Ebd follows the same Weibull distribution when the data are scaled using the testing area. This overall scaling suggests that the defect density is ∼ 1015 cm−2 and Ebd is ∼ 40 MV/cm for nanometer-length scales; as such, breakdown in these materials is most likely initiated by bond breaking rather than punctual defects.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Rw Metal-insulator-metal structures

Local dielectric permittivity of HfO2 based slabs and stacks: A first principles study

N. Shi and R. Ramprasad

Appl. Phys. Lett. 91, 242906 (2007); http://dx.doi.org/10.1063/1.2822834 (3 pages) | Cited 6 times

Online Publication Date: 14 December 2007

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A recently developed theory of atomic-scale local dielectric permittivity has been used to determine the position dependent optical and static dielectric permittivity profiles of a few nanoscale HfO2 and Si–HfO2 heterojunction slabs. The dielectric constants at the interior regions of each component recovered their respective bulk values. Enhancement of the dielectric constant at the free surfaces and its variations at the Si–HfO2 interface could be correlated to the corresponding surface and interfacial chemistry.
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77.22.Ch Permittivity (dielectric function)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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