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10 Dec 2007

Volume 91, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 91, 241101 (2007); http://dx.doi.org/10.1063/1.2821382 (3 pages)

S. N. Goda, S. Sensarn, M. Y. Shverdin, and G. Y. Yin
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Investigation of stress-induced (100) platelet formation and surface exfoliation in plasma hydrogenated Si

Zengfeng Di, Yongqiang Wang, Michael Nastasi, Francois Rossi, Jung-Kun Lee, Lin Shao, and Phillip E. Thompson

Appl. Phys. Lett. 91, 244101 (2007); http://dx.doi.org/10.1063/1.2822414 (3 pages) | Cited 6 times

Online Publication Date: 10 December 2007

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We have studied the mechanisms underlying stress-induced platelet formation during plasma hydrogenation. The stress is purposely introduced by a buried SiGe stained layer in a Si substrate. During plasma hydrogenation, diffusing H is trapped in the region of the SiGe layer and H platelets are formed. The platelet orientation is controlled by the in-plane compressive stress, which favors nucleation and growth of platelets in the plane of stress and parallel to the substrate surface, and ultimately leads to controlled fracture along the SiGe layer. Also, the Si/SiGe/Si structure is found to be more efficient in utilizing H for platelet formation and growth compared to H ion implanted Si because there are fewer defects to trap H (e.g., VnHm and InHm); therefore, the total H dose needed for layer exfoliation is greatly reduced.
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68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
81.65.-b Surface treatments
52.77.-j Plasma applications

Scanning electron and cathodoluminescence imaging of thin film Lu2SiO5:Ce scintillating materials

P. D. Rack, J. D. Peak, C. L. Melcher, and J. M. Fitz-Gerald

Appl. Phys. Lett. 91, 244102 (2007); http://dx.doi.org/10.1063/1.2821115 (3 pages) | Cited 7 times

Online Publication Date: 10 December 2007

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Cerium doped lutetium orthosilicate thin films were sputter deposited onto rough and smooth alumina substrates to compare their extrinsic photoluminescence efficiency. To understand the photoluminescence results, scanning electron and cathodoluminescence imaging were performed. The plane view and cross-section images revealed that dark cathodoluminescence regions were correlated with topology in both films, though the mechanisms for the degraded luminescence were different. For the rough films, substrate topology causes localized shadowing of the sputtered species which creates compositional inhomogeneities. The smooth films have protrusions caused by thermally induced stress and the reduced cathodoluminescence intensity is attributed to electron-hole surface recombination.
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78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Cd Deposition by sputtering
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators
78.55.Hx Other solid inorganic materials

Consistent experimental determination of the charge neutrality level and the pillow effect at metal/organic interfaces

O. V. Molodtsova, M. Grobosch, M. Knupfer, and V. Yu. Aristov

Appl. Phys. Lett. 91, 244103 (2007); http://dx.doi.org/10.1063/1.2824578 (3 pages) | Cited 8 times

Online Publication Date: 12 December 2007

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Experimental results for the interface dipoles at metal/organic and organis/organic interfaces have been analyzed on the basis of the induced density of interfaces states model. We demonstrate that a consistent analysis of a selected set of interfaces is possible, which allows the determination of all microscopic parameters of the model, and moreover enables the prediction of the electronic properties of further, yet unknown interfaces.
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73.20.At Surface states, band structure, electron density of states

Control of transient biaxial order in calamitic nematics

F. Ciuchi, H. Ayeb, G. Lombardo, R. Barberi, and Georges E. Durand

Appl. Phys. Lett. 91, 244104 (2007); http://dx.doi.org/10.1063/1.2824830 (3 pages) | Cited 6 times

Online Publication Date: 14 December 2007

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The biaxial order reconstruction in nematics (BORN) is a dynamical effect which can change the topology of nematic textures. The BORN can be induced in a nematic material submitted to strong external constraints, as in the case of bulk textural distortions due to an electric field in a π cell. In this work, we show how suitable dopants for a thermotropic calamitic nematic can influence its transient biaxial order and, hence, the electric BORN threshold.
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42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
83.80.Xz Liquid crystals: nematic, cholesteric, smectic, discotic, etc.
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