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24 Dec 2007

Volume 91, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 91, 261106 (2007); http://dx.doi.org/10.1063/1.2825578 (3 pages)

W. M. Zhu, T. Zhong, A. Q. Liu, X. M. Zhang, and M. Yu
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Pockels response in calcium barium niobate thin films

R. Helsten, L. Razzari, M. Ferrera, P. F. Ndione, M. Gaidi, C. Durand, M. Chaker, and R. Morandotti

Appl. Phys. Lett. 91, 261101 (2007); http://dx.doi.org/10.1063/1.2824455 (3 pages) | Cited 11 times

Online Publication Date: 26 December 2007

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The electro-optical response of calcium barium niobate ferroelectric thin films is characterized using a single beam setup in reflection geometry. Clear evidence of a Pockels response together with an r33 coefficient as high as 130 pm/V is found. This large value and the high Curie temperature of the material under study (>250 °C) can be considered as a promising feature for the fabrication of hybrid, integrated electro-optical modulators working at a high repetition rate.
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77.55.-g Dielectric thin films
78.20.Jq Electro-optical effects
77.80.B- Phase transitions and Curie point
78.66.-w Optical properties of specific thin films

Electrically driven light emission from hot single-walled carbon nanotubes at various temperatures and ambient pressures

Xinran Wang, Li Zhang, Yuerui Lu, Hongjie Dai, Y. K. Kato, and Eric Pop

Appl. Phys. Lett. 91, 261102 (2007); http://dx.doi.org/10.1063/1.2827281 (3 pages) | Cited 4 times

Online Publication Date: 26 December 2007

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Electroluminescence of individual single-walled carbon nanotubes down to ∼ 15 K is measured. We observe electrically driven light emission from suspended quasimetallic nanotubes in vacuum down to ∼ 15 K and under different gas pressures at room temperature. Light emission is found to originate from hot electrons in the presence of electrically driven nonequilibrium optical phonons. Reduced light emission is observed in exponential manner as electron and optical phonon temperatures in the nanotube are lowered by lower ambient temperature or higher gas pressure. The results reveal over wide ambient conditions, light emission in a suspended tube is from thermally excited electron-hole recombination.
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78.67.Ch Nanotubes
78.60.Fi Electroluminescence
73.63.Fg Nanotubes
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Low resistance as-deposited Cr/Au contacts on p-type GaN

F. G. Kalaitzakis, N. T. Pelekanos, P. Prystawko, M. Leszczynski, and G. Konstantinidis

Appl. Phys. Lett. 91, 261103 (2007); http://dx.doi.org/10.1063/1.2828044 (3 pages) | Cited 3 times

Online Publication Date: 26 December 2007

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The influence of several predeposition surface treatments and different contact metals to the electrical properties of metal/p-GaN contacts was studied. A low resistance as-deposited Cr/Au Ohmic contact was achieved, using boiling aqua regia as surface treatment. The Ohmic resistance of Cr/Au contacts with 50 μm interspacing was found to be 50 Ω, while the specific contact resistivity value was measured 2.6×10−3 Ω cm2. Direct comparison with the standard oxidized Ni/Au contacts confirmed the superior characteristics of the Cr/Au contact scheme. Violet emission was readily obtained when the as-deposited Cr/Au contacts were used as the p electrode of a light emitting diode emitting at 385 nm.
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73.40.Ns Metal-nonmetal contacts
81.65.-b Surface treatments

Improved operational lifetime of semiconducting polymer lasers by encapsulation

S. Richardson, O. P. M. Gaudin, G. A. Turnbull, and I. D. W. Samuel

Appl. Phys. Lett. 91, 261104 (2007); http://dx.doi.org/10.1063/1.2826276 (3 pages) | Cited 12 times

Online Publication Date: 27 December 2007

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We report polymer distributed feedback lasers with dramatically extended operational lifetimes by using a simple encapsulation process. The lasers are configured as surface emitting, two-dimensional distributed feedback lasers based on the polymer poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene]. The microstructure is transferred to the polymer surface through solvent assisted micromolding. Once encapsulated, a 2500-fold improvement in lifetime is demonstrated under ambient conditions, compared to the unencapsulated device. A blueshift of the emission wavelength observed during operation is characterized by absorption and ellipsometry measurements and attributed to a change in effective index due to a loss of conjugation in the polymer.
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42.55.Px Semiconductor lasers; laser diodes

Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates

I. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, and S. Loualiche

Appl. Phys. Lett. 91, 261105 (2007); http://dx.doi.org/10.1063/1.2827177 (3 pages) | Cited 7 times

Online Publication Date: 27 December 2007

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InAs quantum dot lasers grown on (311)B InP substrates with AlGaInAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which cannot be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalisation of carriers within quantum dot ensemble.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Micromachined optical well structure for thermo-optic switching

W. M. Zhu, T. Zhong, A. Q. Liu, X. M. Zhang, and M. Yu

Appl. Phys. Lett. 91, 261106 (2007); http://dx.doi.org/10.1063/1.2825578 (3 pages) | Cited 4 times

Online Publication Date: 28 December 2007

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This letter demonstrates the thermo-optic switching function using an adjustable optical well structure, which is constructed by a thin air gap sandwiched between two micromachined hemicylindrical prisms. The device is etched on a silicon-on-insulator wafer within a footprint of 400×400 μm2. In experiment, it measures an extinction ratio of 30.2 dB and a switching time of 2.2 μs. Compared with the other demonstrated switches that have optical barrier structures, this device is unique in the working principle and optical design, and shows various merits such as high extinction ratio, fast speed, low power consumption, and small size.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Bh Lenses, prisms and mirrors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
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