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24 Dec 2007

Volume 91, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 91, 261106 (2007); http://dx.doi.org/10.1063/1.2825578 (3 pages)

W. M. Zhu, T. Zhong, A. Q. Liu, X. M. Zhang, and M. Yu
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Low temperature grown carbon nanotube interconnects using inner shells by chemical mechanical polishing

Daisuke Yokoyama, Takayuki Iwasaki, Tsuyoshi Yoshida, Hiroshi Kawarada, Shintaro Sato, Takashi Hyakushima, Mizuhisa Nihei, and Yuji Awano

Appl. Phys. Lett. 91, 263101 (2007); http://dx.doi.org/10.1063/1.2824390 (3 pages) | Cited 36 times

Online Publication Date: 26 December 2007

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Vertically aligned multiwalled carbon nanotubes (MWCNTs) were synthesized by remote plasma chemical vapor deposition at a low temperature of 390 °C, which meets the requirement of the large scale integration (LSI) process. For wiring application, we measured the electrical properties of MWCNT-via structures with and without chemical mechanical polishing (CMP). The via resistances were reduced using inner shells of MWCNTs whose caps were opened due to CMP. The improved resistance after annealing at 400 °C was 0.6 Ω for 2 μm vias. Our process is suitable for LSI because the temperature never exceeds the allowable temperature of 400 °C in the Si LSI process.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Sz Deposition technology
85.35.Kt Nanotube devices

Confocal microscope photoluminescence and electrical characteristics of single poly(3-hexylthiophene) nanowire strand

Seok Ho Lee, Dong Hyuk Park, Kihyun Kim, Jinsoo Joo, Dae-Chul Kim, Hyun-Jun Kim, and Jeongyong Kim

Appl. Phys. Lett. 91, 263102 (2007); http://dx.doi.org/10.1063/1.2824460 (3 pages) | Cited 8 times

Online Publication Date: 26 December 2007

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The photoluminescence (PL) spectra and images of a single strand of poly(3-hexylthiophene) (P3HT) nanowires with different doping states were compared by means of a laser confocal microscope with a high spatial resolution. The P3HT nanowires were electrochemically synthesized by using an ionic liquid as a dopant. From the ultraviolet and visible absorption spectra, the doping and dedoping effects of the P3HT nanowires through the treatment of organic solvent were investigated. The electrical conductivity of the single strand of the lightly doped P3HT nanowires was estimated to be ∼ 3.5×10−3 S/cm, which was higher than that ( ∼ 5.4×10−5 S/cm) of the dedoped one. From the laser confocal microscope PL experiments, we quantitatively observed more homogeneous and three to eight times brighter light emission from the single strand of the dedoped P3HT nanowires.
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78.55.Kz Solid organic materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.63.-b Electronic transport in nanoscale materials and structures
78.40.Me Organic compounds and polymers

Optical investigation of type II GaSb/GaAs self-assembled quantum dots

Diego Alonso-Álvarez, Benito Alén, Jorge M. García, and José M. Ripalda

Appl. Phys. Lett. 91, 263103 (2007); http://dx.doi.org/10.1063/1.2827582 (3 pages) | Cited 24 times

Online Publication Date: 26 December 2007

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We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ∼ 500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system.
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78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
81.16.Dn Self-assembly
73.63.Kv Quantum dots
73.50.Pz Photoconduction and photovoltaic effects

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

A. Mishra, L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 91, 263104 (2007); http://dx.doi.org/10.1063/1.2828034 (3 pages) | Cited 44 times

Online Publication Date: 26 December 2007

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We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.
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81.07.Vb Quantum wires
81.05.Ea III-V semiconductors
78.67.Lt Quantum wires
78.55.Cr III-V semiconductors

Incorporation of Sb in InAs/GaAs quantum dots

S. I. Molina, A. M. Sánchez, A. M. Beltrán, D. L. Sales, T. Ben, M. F. Chisholm, M. Varela, S. J. Pennycook, P. L. Galindo, A. J. Papworth, P. J. Goodhew, and J. M. Ripalda

Appl. Phys. Lett. 91, 263105 (2007); http://dx.doi.org/10.1063/1.2826546 (3 pages) | Cited 12 times

Online Publication Date: 27 December 2007

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The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 μm. The existence of the four constituent elements is demonstrated by using spatially resolved low-loss electron energy loss spectroscopy and aberration-corrected high angle annular dark field scanning transmission electron microscopy. The intermixing process giving rise to the formation of this quaternary alloy takes place despite the large miscibility gap between InAs and GaSb binary compounds, and is probably driven by the existence of strain in the quantum dots.
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79.20.Uv Electron energy loss spectroscopy
68.65.Hb Quantum dots (patterned in quantum wells)

Self-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy

L. Fernández, M. Löffler, J. Cordón, and J. E. Ortega

Appl. Phys. Lett. 91, 263106 (2007); http://dx.doi.org/10.1063/1.2828036 (3 pages) | Cited 5 times

Online Publication Date: 27 December 2007

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Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting structures by scanning tunneling microscopy. On vicinal Si(111) surfaces with relatively narrow ( ∼ 40–100 Å) terrace width, such reactive epitaxy leads to self-assembled arrays of CoSi2 quantum dots with a sharp size distribution function. In contrast, the growth of Co on flat Si(111) results in an inhomogeneous array of dots mixed with a variety of silicide phases.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Stress-induced band gap tuning in ⟨112⟩ silicon nanowires

A. J. Lu, R. Q. Zhang, and S. T. Lee

Appl. Phys. Lett. 91, 263107 (2007); http://dx.doi.org/10.1063/1.2826267 (3 pages) | Cited 14 times

Online Publication Date: 28 December 2007

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We show via density functional calculations that the electronic band structures of ⟨112⟩-oriented hydrogenated silicon nanowires (SiNWs) could be significantly altered by axial stresses. In particular, an axial compression could cause an indirect-to-direct band gap transition in ⟨112⟩ SiNWs. As direct energy band may induce strong light-emission properties of Si, the possibility of indirect-to-direct band transition via axial stress has fundamental implications in exploiting SiNWs for optoelectronic applications.
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73.21.Hb Quantum wires
71.20.Mq Elemental semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Piezoresponse imaging of lead zirconate titanate microfibers and numerical analysis of its electric field distribution

Yu Wang and Jorge Santiago-Avilés

Appl. Phys. Lett. 91, 263108 (2007); http://dx.doi.org/10.1063/1.2827564 (3 pages) | Cited 1 time

Online Publication Date: 28 December 2007

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Piezoresponse imaging technique was transplanted from thin film to probe polarization domains and local properties in single electrospun lead zirconate titanate microfibers. The corresponding electric field distribution was numerically analyzed. The biased conic tip is found to produce a field that peaks on its apex and decreases rapidly toward the bottom metal electrode. A strong field exists only in a thin surface region and cannot pole the affected domain even with its magnitude of 108 V/m on the fiber surface.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
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