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16 Jul 2007

Volume 91, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 91, 033106 (2007); http://dx.doi.org/10.1063/1.2757609 (3 pages)

S. Ingole, P. Aella, Sean J. Hearne, and S. T. Picraux
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Laser-induced exfoliation of amorphous carbon layer on an individual multiwall carbon nanotube

G. Singh, P. Rice, K. E. Hurst, J. H. Lehman, and R. L. Mahajan

Appl. Phys. Lett. 91, 033101 (2007); http://dx.doi.org/10.1063/1.2756357 (3 pages) | Cited 7 times

Online Publication Date: 16 July 2007

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Pulsed laser treatment of an individual multiwall carbon nanotube induced selective exfoliation of the amorphous carbon contamination layer. The multiwall carbon nanotube (MWCNT) was exposed to a 248 nm excimer laser. After the treatment, transmission electron microscopy images show that the amorphous layer has expanded and separated from the crystalline MWCNT walls. This interesting observation has implications for laser cleaning and possible thinning of MWCNTs to reduce the radial dimensions.
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81.05.U- Carbon/carbon-based materials
81.07.De Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing
42.62.-b Laser applications
61.43.-j Disordered solids
61.46.Fg Nanotubes

Curvature effects on electronic properties of small radius nanotube

H. Zeng, H. F. Hu, J. W. Wei, Z. Y. Wang, L. Wang, and P. Peng

Appl. Phys. Lett. 91, 033102 (2007); http://dx.doi.org/10.1063/1.2757119 (3 pages) | Cited 2 times

Online Publication Date: 16 July 2007

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The authors use the density functional theory associated with nonequilibrium Green function to calculate (2,2) and (3,3) single-walled nanotubes. The result of T(E) imply that π or π* band has been suppressed at certain electronic energy region result in the effect of curvature induce complex hybridization procedure. In view of the I-V characteristics of (2,2) tube, it is found that the current curve appears to have an oscillation behavior. These peculiar electronic transport properties of small diameter tube directly relate to a large curvature effect, which may be useful for the manufacture of electronic applications.
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73.63.Fg Nanotubes

Orientation-controlled molecule-by-molecule polymer wire growth by the carrier-gas-type organic chemical vapor deposition and the molecular layer deposition

Tetsuzo Yoshimura, Shinji Ito, Tomohiro Nakayama, and Kotaro Matsumoto

Appl. Phys. Lett. 91, 033103 (2007); http://dx.doi.org/10.1063/1.2754646 (3 pages) | Cited 6 times

Online Publication Date: 16 July 2007

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The carrier-gas-type organic chemical vapor deposition (CG-OCVD) and the molecular layer deposition were developed for orientation-controlled molecule-by-molecule growth of conjugated polymer wires on a surface with self-assembled monolayer (SAM), which provides a feasible way to construct self-organized three-dimensional polymer wire networks. It was also found that, in CG-OCVD, growth saturation occurs for a substrate without SAM while no growth saturation for a substrate with SAM. The analysis of results in terms of reaction site densities on surfaces suggests vertical wire growth on a substrate with SAM and horizontal wire growth on a substrate without SAM.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Fabrication of Si1−xGex alloy nanowire field-effect transistors

Cheol-Joo Kim, Jee-Eun Yang, Hyun-Seung Lee, Hyun M. Jang, Moon-Ho Jo, Won-Hwa Park, Zee Hwan Kim, and Sunglyul Maeng

Appl. Phys. Lett. 91, 033104 (2007); http://dx.doi.org/10.1063/1.2753722 (3 pages) | Cited 16 times

Online Publication Date: 17 July 2007

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The authors present the demonstration of nanowire field-effect transistors incorporating group IV alloy nanowires, Si1−xGex. Single-crystalline Si1−xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was reproducibly controlled in the whole composition range by controlling the kinetics of catalytic decomposition of precursors. Complementary in situ doping of Si1−xGex nanowires was achieved by PH3 and B2H6 incorporation during the synthesis for n- and p-type field-effect transistors. The availability of both n- and p-type Si1−xGex nanowire circuit components suggests implications for group IV semiconductor nanowire electronics and optoelectronics.
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85.40.Sz Deposition technology
85.30.Tv Field effect devices

Resonant microwave absorption determination of characteristic magnetic length in magnetic-field-annealed Vitroperm

G. A. Basheed, S. N. Kaul, and A. Michels

Appl. Phys. Lett. 91, 033105 (2007); http://dx.doi.org/10.1063/1.2754362 (3 pages) | Cited 1 time

Online Publication Date: 17 July 2007

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The first direct resonant microwave absorption determination of the thermal renormalization of exchange stiffness, average magnetic anisotropy constant, and characteristic magnetic length in “field-annealed” Vitroperm samples with an initial magnetic permeability of μi = 20 000 and 150 000 has been presented and discussed.
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75.60.Nt Magnetic annealing and temperature-hysteresis effects
75.30.Et Exchange and superexchange interactions
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Directed assembly of nanowire contacts using electrodeposition

S. Ingole, P. Aella, Sean J. Hearne, and S. T. Picraux

Appl. Phys. Lett. 91, 033106 (2007); http://dx.doi.org/10.1063/1.2757609 (3 pages) | Cited 8 times

Online Publication Date: 17 July 2007

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A maskless process for the directed assembly of Ni contacts to Si nanowires on prepatterned electrodes is reported. Microarrays of thin Au/Cr electrodes were lithographically formed on oxidized Si substrates followed by electric-field assisted alignment of Si nanowires between the electrodes. The nanowire ends were then embedded in Ni by selective electrodeposition over the prepatterned electrodes. Annealing to 300 °C provided good electrical contacts for transport through the doped nanowires. This approach provides a parallel, maskless method to establish metal contacts to the nanowires without the need of high resolution electron beam lithography for electrical and mechanical applications.
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81.16.-c Methods of micro- and nanofabrication and processing
73.63.Rt Nanoscale contacts

Low-frequency charge noise in suspended aluminum single-electron transistors

T. F. Li, Yu. A. Pashkin, O. Astafiev, Y. Nakamura, J. S. Tsai, and H. Im

Appl. Phys. Lett. 91, 033107 (2007); http://dx.doi.org/10.1063/1.2759260 (3 pages) | Cited 11 times

Online Publication Date: 18 July 2007

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The authors have developed a fabrication method for suspended metallic single-electron transistors (SETs) utilizing a combination of conventional angle evaporation technique and ashing of the underlying organic polymer. The authors’ Al-based suspended devices exhibit clear Coulomb blockade effects typical for conventional SETs. The measured low-frequency charge noise is rather low but still within the range reported for conventional Al devices. We suggest that the noise level can be further reduced by decreasing the effective SET temperature.
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85.35.Gv Single electron devices
85.35.Ds Quantum interference devices

Two-dimensional slicing method to speed up the fabrication of micro-objects based on two-photon polymerization

Chao-Yaug Liao, Michel Bouriauand, Patrice L. Baldeck, Jean-Claude Léon, Cédric Masclet, and Tien-Tung Chung

Appl. Phys. Lett. 91, 033108 (2007); http://dx.doi.org/10.1063/1.2759269 (3 pages) | Cited 7 times

Online Publication Date: 18 July 2007

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Generally, a layer-by-layer method along one specific direction (two-and-half-dimensional method) is used to fabricate three-dimensional (3D) microstructures. Ultrathin layers and long processing times are necessary to obtain smooth surfaces in near flat regions of microstructures. In their approach, the authors slice these nearly flat areas along another slicing direction to produce the scanning paths of the laser beam. Several examples, including a microdragon, have been produced to validate that this real 3D method can generate micro-objects with a good balance between surface accuracy and processing efficiency.
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82.35.-x Polymers: properties; reactions; polymerization
82.50.-m Photochemistry
42.62.-b Laser applications

Electrochromic properties of intercrossing nickel oxide nanoflakes synthesized by electrochemically anodic deposition

Mao-Sung Wu and Chung-Hsien Yang

Appl. Phys. Lett. 91, 033109 (2007); http://dx.doi.org/10.1063/1.2759270 (3 pages) | Cited 21 times

Online Publication Date: 18 July 2007

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Nanostructured nickel oxide film is synthesized directly onto a transparent and conducting indium tin oxide coated glass substrate by electrochemically anodic deposition from an aqueous solution. The deposited nickel oxide film has an intercrossing nanoflake and highly porous morphology. X-ray diffraction peaks of the film resemble closely to the cubic NiO structure. The deposited film oxidized/reduced electrochemically at 0.36 and 0.25 V versus a saturated Ag/AgCl electrode, respectively, which corresponds to the reversible changes in coloration and bleaching. The difference in optical response (transmittance) ΔT at wavelength of 550 nm between the colored state and bleached state can reach as high as 80%.
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82.45.Qr Electrodeposition and electrodissolution
82.45.Mp Thin layers, films, monolayers, membranes
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
78.20.Jq Electro-optical effects

Three dimensional mapping of thermal and tunneling electron emission from InAs/GaAs quantum dots

O. Engström, M. Kaniewska, W. Jung, and M. Kaczmarczyk

Appl. Phys. Lett. 91, 033110 (2007); http://dx.doi.org/10.1063/1.2753543 (3 pages) | Cited 10 times

Online Publication Date: 19 July 2007

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Using a three dimensional representation of data from deep level transient spectroscopy (DLTS) in a parameter space given by temperature, applied sample voltage, and DLTS signal, a method is demonstrated for interpreting a complex set of basic properties of quantum dots. Experimental results on InAs/GaAs quantum dots are compared with theoretical calculations presented in the same parameter space. From such a comparison, different regimes dominated by charge carrier tunneling and thermal emission and mixture of these can be identified, thus resolving the complex emission data from this kind of systems into its component parts.
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78.67.Hc Quantum dots
73.63.Kv Quantum dots
73.40.Gk Tunneling
73.21.La Quantum dots

Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si

Min Choul Kim, Sung Kim, Suk-Ho Choi, and Sangjin Park

Appl. Phys. Lett. 91, 033111 (2007); http://dx.doi.org/10.1063/1.2756110 (3 pages) | Cited 4 times

Online Publication Date: 19 July 2007

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A band of ∼ 1.6 nm diameter Si nanocrystals (NCs) has been prepared at a depth of about 5 nm within SiO2 by atomic-layer deposition of 2 nm amorphous Si on 5 nm SiO2 and subsequent thermal oxidation at 900 °C. After 4 h light exposure of 5.66 W/cm2, photoluminescence (PL) spectrum of the Si NCs is almost 60 times enhanced with its peak blueshifted by about 30 nm. The enhancement rate of the PL intensity with illumination time increases as the oxidation time increases. The PL intensity and its peak wavelength are partially recovered by annealing the samples at 440 K for 1 h, suggesting the effect is metastable. It is proposed that the anomalous light-induced effect is originated from the defect states at the Si NCs/SiO2 interfaces.
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81.07.Bc Nanocrystalline materials
81.05.Cy Elemental semiconductors
78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
71.55.Cn Elemental semiconductors

Evolution of InAs nanostructures grown by droplet epitaxy

C. Zhao, Y. H. Chen, B. Xu, P. Jin, and Z. G. Wang

Appl. Phys. Lett. 91, 033112 (2007); http://dx.doi.org/10.1063/1.2757151 (3 pages) | Cited 3 times

Online Publication Date: 19 July 2007

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The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Synthesis and characterization of an n = 6 Aurivillius phase incorporating magnetically active manganese, Bi7(Mn,Ti)6O21

M. A. Zurbuchen, R. S. Freitas, M. J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, M. D. Biegalski, G. H. Mehta, D. J. Comstock, J. H. Lee, Y. Jia, and D. G. Schlom

Appl. Phys. Lett. 91, 033113 (2007); http://dx.doi.org/10.1063/1.2756163 (3 pages) | Cited 4 times

Online Publication Date: 20 July 2007

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Epitaxial films of Bi7Mn3.75Ti2.25O21 were prepared to yield a previously unsynthesized material. The superlattice phase is produced by incorporating the magnetoelectric BiMnO3 into the perovskite substructure of the ferroelectric Bi4Ti3O12, a strategy which is hoped to yield previously undiscovered multiferroic materials. X-ray diffraction and transmission electron microscopy (TEM) confirm synthesis of an epitaxial n = 6 Aurivillius phase. Magnetization measurements show ferromagnetic behavior with a Curie point of 55 K, but electronic polarization measurements show no remanent polarization. Rutherford backscattering spectrometry indicates a channeling minimum χmin of 22%, consistent with the high density of out-of-phase domain boundaries observed by TEM.
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77.55.-g Dielectric thin films
75.70.Ak Magnetic properties of monolayers and thin films
68.55.A- Nucleation and growth
81.15.Fg Pulsed laser ablation deposition
75.80.+q Magnetomechanical effects, magnetostriction
75.50.Dd Nonmetallic ferromagnetic materials
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