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30 Jul 2007

Volume 91, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 91, 052901 (2007); http://dx.doi.org/10.1063/1.2767146 (3 pages)

Wei-Feng Rao and Yu U. Wang
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Charge control analysis of transistor laser operation

M. Feng, N. Holonyak, Jr., H. W. Then, and G. Walter

Appl. Phys. Lett. 91, 053501 (2007); http://dx.doi.org/10.1063/1.2767172 (3 pages) | Cited 31 times

Online Publication Date: 30 July 2007

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The authors report the calculation of the minority carrier distribution in the base region of the transistor laser (TL) employing the relevant continuity equations and experimental carrier lifetimes, spontaneous and stimulated, extracted from the transistor I-V characteristics. A charge control model of the TL is developed, consistent with the short recombination lifetime of the quantum-well base (which competes with the short emitter-to-collector transit time). The absence of carrier-photon resonance of a TL is demonstrated with the 3 dB bandwidth (IB/IB,th = 1.5) estimated to be 30 GHz for a 400 μm long laser cavity length and 70 GHz for a 150 μm cavity.
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42.55.Px Semiconductor lasers; laser diodes
42.82.Gw Other integrated-optical elements and systems
85.30.Tv Field effect devices

Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers

E. Miranda

Appl. Phys. Lett. 91, 053502 (2007); http://dx.doi.org/10.1063/1.2761831 (3 pages) | Cited 2 times

Online Publication Date: 31 July 2007

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The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. Using the Landauer formula for a quantum point contact, the author is able to show that the saturation of the gate leakage current is linked to the progressive evolution of the constriction’s conductance toward the ballistic transport regime. The possible physical mechanisms responsible for energy dissipation inside the breakdown path as well as the limitations of the proposed approach are discussed.
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77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.23.Ad Ballistic transport
73.50.Fq High-field and nonlinear effects
73.50.Dn Low-field transport and mobility; piezoresistance

Chemical bath deposition of CdS quantum dots onto mesoscopic TiO2 films for application in quantum-dot-sensitized solar cells

Chi-Hsiu Chang and Yuh-Lang Lee

Appl. Phys. Lett. 91, 053503 (2007); http://dx.doi.org/10.1063/1.2768311 (3 pages) | Cited 98 times

Online Publication Date: 31 July 2007

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Alcohol, instead of water, was used as a solvent in a chemical bath deposition process for the in situ synthesis of CdS quantum dots onto mesoporous TiO2 films. Due to low surface tension, the alcohol solutions have high wettability and superior penetration ability on the mesoscopic TiO2 film, leading to a well-covered CdS on the surface of mesopores. The CdS-sensitized TiO2 electrode prepared using the alcohol system not only has a higher incorporated amount of CdS but also greatly inhibits the recombination of injected electrons. The efficiency of a CdS quantum-dots-sensitized solar cell prepared using the present method is as high as 1.84% under the illumination of one sun (AM1.5, 100 mW/cm2).
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68.65.Hb Quantum dots (patterned in quantum wells)
84.60.Jt Photoelectric conversion
68.03.Cd Surface tension and related phenomena
81.05.Dz II-VI semiconductors

Silicon optical amplifier based on surface-plasmon-polariton enhancement

Yi Wang and Zhiping Zhou

Appl. Phys. Lett. 91, 053504 (2007); http://dx.doi.org/10.1063/1.2759258 (3 pages) | Cited 3 times

Online Publication Date: 31 July 2007

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A silicon optical amplifier based on surface-plasmon-polariton enhancement is proposed, designed, and simulated. The gain coefficient of the Si:SiEr-metal-silicon structure is increased 24% at 1.54 μm and the loss is greatly reduced, comparing with a conventional stack structure. The net gain achieved by the Si:SiEr-metal-silicon structure is in the range of 1–36 cm−1 when thickness of the thin gold film is less than 20 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.Gw Other integrated-optical elements and systems

Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates

Masatoshi Kitamura and Yasuhiko Arakawa

Appl. Phys. Lett. 91, 053505 (2007); http://dx.doi.org/10.1063/1.2759981 (3 pages) | Cited 35 times

Online Publication Date: 1 August 2007

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Organic complementary inverters with C60 and pentacene thin-film transistors (TFTs) have been fabricated on glass substrate. The inverter operated at low voltages of 1–5 V. The C60 and pentacene TFTs had high field-effect mobilities of 0.68 and 0.59 cm2/V s, and threshold voltage of 0.80 and −0.84 V, respectively. The low threshold voltage enables the low voltage operation of the inverter.
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84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Wideband quarter-wave liquid crystal cell with wide viewing angle for the reflective mode with single polarizer

Tae Woon Ko, Jae Chang Kim, Hyun Chul Choi, Kyoung-Ho Park, Seung Hee Lee, Kyung-Mi Kim, Wa-Ryong Lee, and Gi-Dong Lee

Appl. Phys. Lett. 91, 053506 (2007); http://dx.doi.org/10.1063/1.2767236 (3 pages) | Cited 7 times

Online Publication Date: 1 August 2007

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In this letter, the authors propose an optical configuration for the reflective liquid crystal (LC) cell with single polarizer, which can show the wideband property for high contrast in oblique incidence. The cell consists of a biaxial, a half-wave retarder, a quarter-wave LC cell, and a positive C plate in addition to a reflector. They optimize the configuration of the reflective LC cell on the Poincaré sphere using trigonometric calculation. In order to verify the optical performance, the authors experimentally compare the optical characteristics of the proposed LC cell with those of the conventional LC cell.
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42.79.Kr Display devices, liquid-crystal devices

Pulse height reduction effects of superconducting tunnel junction particle detectors for low-energy light molecular ions

S. Tomita, Y. Sato, M. Ohkubo, M. Ukibe, and S. Hayakawa

Appl. Phys. Lett. 91, 053507 (2007); http://dx.doi.org/10.1063/1.2767242 (3 pages) | Cited 4 times

Online Publication Date: 1 August 2007

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The performance of particle detectors using superconducting tunnel junctions has been studied for metal cluster or molecular ions accelerated at 3 keV. The output pulse height for individual ion impact decreases as the mass of projectiles increases in a mass range of less than 800 amu. In addition, pulse height reduction effects strongly depend on the molecular species. These phenomena are understood by taking into account secondary electron emission that carries part of the deposited kinetic energies of ion away from the junction surface.
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29.40.Wk Solid-state detectors
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Charge injection process in organic field-effect transistors

Takeo Minari, Tetsuhiko Miyadera, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, and Hiromi Ito

Appl. Phys. Lett. 91, 053508 (2007); http://dx.doi.org/10.1063/1.2759987 (3 pages) | Cited 51 times

Online Publication Date: 1 August 2007

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The charge injection process in top-contact organic field-effect transistors was energetically observed with displacement of the Fermi level as a result of scanning the gate voltage. Doping of charge-transfer molecules into the metal/organic interface resulted in low interface resistance, which unveiled the bulk transport of the injected charges from the contact metal into the channel. The authors found that the bulk transport clearly obeys the Meyer-Neldel rule, according to which the exponential density of states near the band edge limits the charge injection.
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85.30.Tv Field effect devices

Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature

Kousuke Miyaji and Toshiro Hiramoto

Appl. Phys. Lett. 91, 053509 (2007); http://dx.doi.org/10.1063/1.2767765 (3 pages) | Cited 5 times

Online Publication Date: 2 August 2007

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The full width at half maximum (FWHM), the sharpness of the Coulomb blockade oscillation in a single-hole transistor (SHT), has been controlled at room temperature by means of substrate capacitance control using substrate depletion and accumulation/inversion. When the substrate is depleted, the substrate capacitance is lower than when it is accumulated or inverted, resulting in a smaller FWHM. The SHT was fabricated on a thin buried oxide silicon-on-insulator substrate whose initial thickness was 10 nm. Low temperature measurements have been performed on another SHT to support the results. The control of the sharpness in a single-charge transistor (SCT) may add further functionality to the SCT.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling

Voltage induced ultrasharp current jump and magnetic tunability of CaMnO3−δ/La0.69Ca0.31MnO3 heterojunction

C. M. Xiong, Y. G. Zhao, S. M. Guo, B. T. Xie, W. G. Huang, Z. Q. Kou, and Z. H. Cheng

Appl. Phys. Lett. 91, 053510 (2007); http://dx.doi.org/10.1063/1.2767766 (3 pages) | Cited 3 times

Online Publication Date: 2 August 2007

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The authors report the current-voltage characteristics of CaMnO3−δ/La0.69Ca0.31MnO3 heterojunctions prepared under different oxygen pressures. The most interesting observation is that the heterojunctions made under low oxygen pressure shows an ultrasharp current jump in the current-voltage curves and the nonlinear coefficient can reach ∼ 2×104. They also show remarkable magnetoresistance. The results can be understood in terms of the oxygen vacancy related defects at the junction interface. This work shows that all-manganite-based heterojunctions can show giant nonlinear coefficient, which may have potential applications.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.47.De Giant magnetoresistance
61.72.J- Point defects and defect clusters
68.35.Dv Composition, segregation; defects and impurities

4H SiC betavoltaic powered temperature transducer

M. V. S. Chandrashekhar, Rajesh Duggirala, Michael G. Spencer, and Amit Lal

Appl. Phys. Lett. 91, 053511 (2007); http://dx.doi.org/10.1063/1.2767780 (3 pages) | Cited 2 times

Online Publication Date: 2 August 2007

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The change in open-circuit voltage of a 4H SiC p-n diode betavoltaic cell in response to temperature was used to sense temperature. A linear sensitivity of 2.7 mV/K was obtained from 24 to 86 °C. This was achieved with only 2.5 μCi of active nickel-63 as the β source, giving a short circuit current of 21 pA, a low-enough activity for civilian applications. The measured sensitivity of 2.7 mV/K was lower than the 5.5 mV/K predicted from the theory. The 28 GΩ shunt resistance of the betavoltaic cell was used to explain the lower sensitivity.
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85.30.Kk Junction diodes
82.47.-a Applied electrochemistry
07.20.Dt Thermometers

Silver oxide Schottky contacts on n-type ZnO

M. W. Allen, S. M. Durbin, and J. B. Metson

Appl. Phys. Lett. 91, 053512 (2007); http://dx.doi.org/10.1063/1.2768028 (3 pages) | Cited 48 times

Online Publication Date: 3 August 2007

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A method of fabricating highly rectifying Schottky contacts on n-type ZnO using silver oxide has been developed and used to compare diode performance on hydrothermal and melt grown, bulk, single crystals. Silver oxide diodes on hydrothermal ZnO have lower ideality factors, lower reverse current voltage dependence, higher series resistance, and larger surface-polarity related differences in barrier height, compared to those on melt ZnO. These effects are explained by the large difference in resistivity between hydrothermal and melt ZnO. Barrier heights of 1.20 eV were achieved on the Zn-polar face of hydrothermal ZnO which are the highest reported for n-type ZnO.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ey III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
85.30.Kk Junction diodes
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