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30 Jul 2007

Volume 91, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 052901 (2007); http://dx.doi.org/10.1063/1.2767146 (3 pages)

Wei-Feng Rao and Yu U. Wang
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Equivalent point-mass models of continuous atomic force microscope probes

John Melcher, Shuiqing Hu, and Arvind Raman

Appl. Phys. Lett. 91, 053101 (2007); http://dx.doi.org/10.1063/1.2767173 (3 pages) | Cited 44 times

Online Publication Date: 30 July 2007

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The theoretical foundations of dynamic atomic force microscopy (AFM) are based on point-mass models of continuous, micromechanical oscillators with nanoscale tips that probe local tip-sample interaction forces. In this letter, the authors present the conditions necessary for a continuous AFM probe to be faithfully represented as a point-mass model, and derive the equivalent point-mass model for a general eigenmode of arbitrarily shaped AFM probes based on the equivalence of kinetic, strain, and tip-sample interaction energies. They also demonstrate that common formulas in dynamic AFM change significantly when these models are used in place of the traditional ad hoc point-mass models.
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07.79.Lh Atomic force microscopes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Tunnel field-effect transistor without gate-drain overlap

Anne S. Verhulst, William G. Vandenberghe, Karen Maex, and Guido Groeseneken

Appl. Phys. Lett. 91, 053102 (2007); http://dx.doi.org/10.1063/1.2757593 (3 pages) | Cited 34 times

Online Publication Date: 30 July 2007

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Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have low on-currents resulting in low switching speed. The authors have generalized the tunnel field-effect transistor configuration by allowing a shorter gate structure. The proposed device is especially attractive for vertical nanowire-based transistors. As illustrated with device simulations, the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.
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85.30.Tv Field effect devices

Strain on wrinkled bilayer thin film

Wu-Ping Huang, Henry H. Cheng, Alexander I. Fedorchenko, and An-Bang Wang

Appl. Phys. Lett. 91, 053103 (2007); http://dx.doi.org/10.1063/1.2767204 (3 pages) | Cited 5 times

Online Publication Date: 30 July 2007

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The authors report strain measurement on bilayer wrinkling silicon-germanium (SiGe) thin film. In combination of atomic force microscopy and ultraviolet micro-Raman measurement, the relationship between the spatial profile and strain distribution is established. Theoretical analysis on the mechanism of strain relaxation shows that, in contrast to self-rolling nanotube, both bending and shearing force play an important role in determining the morphology. The behavior demonstrated in the SiGe system should also exist in a wide range of material systems under various strain situations. This study advances the understanding of nanostructure engineered by strain and has significant implications on the performance of nanodevices.
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81.05.Hd Other semiconductors
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
78.66.Li Other semiconductors

Tailoring the long-range order of block copolymer based nanomasks on flat substrates

R. A. Puglisi, P. La Fata, and S. Lombardo

Appl. Phys. Lett. 91, 053104 (2007); http://dx.doi.org/10.1063/1.2766694 (3 pages) | Cited 5 times

Online Publication Date: 30 July 2007

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The authors investigate the self-assembling of polystyrene/polymethylmethacrylate block copolymer films for the formation of nanotemplates on flat substrates. The macrodomain evolution is studied in terms of density, size, and relative orientation during the annealing promoting the self-assembling. The statistics is acquired through an original method based on the elaboration of the electronic micrographs in the reciprocal space. The results indicate that while the annealing conditions do not play a role in the pore-to-pore distance distribution, thus confirming previous results, they influence the macrodomain density and size distributions, inducing an onset of secondary grain growth crystallization behavior in this system.
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81.16.Dn Self-assembly
81.07.Nb Molecular nanostructures

Transmission electron microscopy based direct mathematical quantifiers for dispersion in nanocomposites

S. K. Basu, A. Tewari, P. D. Fasulo, and W. R. Rodgers

Appl. Phys. Lett. 91, 053105 (2007); http://dx.doi.org/10.1063/1.2760182 (3 pages) | Cited 8 times

Online Publication Date: 30 July 2007

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A rigorous mathematical foundation and a procedure for quantifying three-dimensional exfoliation and dispersion of clay particles in polymer-clay nanocomposites from their two-dimensional transmission electron microscopy micrographs have been developed. Two independent parameters, exfoliation number and interparticle distance, have been proposed. The exfoliation number gives the percentage of exfoliation achieved, whereas the interparticle distance is a measure of spatial separation between particles. The quantitative description of the nanocomposite microstructure would enable the establishment of synthesis/processing-structure-property linkages in nanocomposites and provide a benchmark for other indirect characterization techniques, such as x-ray diffraction, rheology, etc.
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61.46.-w Structure of nanoscale materials

Synthetic relationship between titanium and alloying elements in designing Ni-free Ti-based bulk metallic glass alloys

Jeong-Jung Oak, Dmitri V. Louzguine-Luzgin, and Akihisa Inoue

Appl. Phys. Lett. 91, 053106 (2007); http://dx.doi.org/10.1063/1.2760800 (3 pages) | Cited 2 times

Online Publication Date: 30 July 2007

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Ni-free Ti-based bulk metallic glass (BMG) alloys were reported to have a high enough glass forming ability (GFA). In this study, the glass forming ability of Ti-based BMG alloys without Ni and Be additions is analyzed using Inoue’s empirical rules, bonding order (Bo), and molecular d-orbital energy values (Md). The developed Ti-based BMG alloys revealed a separable location on the math-math diagram which presents the direction for design of Ti-based BMG alloys with high GFA.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses

Random telegraph signals in n-type ZnO nanowire field effect transistors at low temperature

Hao D. Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter, John S. Suehle, Woong-Ki Hong, Takhee Lee, and Daniel M. Fleetwood

Appl. Phys. Lett. 91, 053107 (2007); http://dx.doi.org/10.1063/1.2761254 (3 pages) | Cited 13 times

Online Publication Date: 30 July 2007

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Single-crystal zinc oxide (ZnO) nanowires have been fabricated as field effect transistors (FETs). The characteristics of low frequency noise in the drain current of n-type ZnO FETs have been investigated through random telegraph signals (RTSs) at 4.2 K. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ∼ 5×10−3. At 4.2 K, the device’s noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show RTSs. The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40%, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.
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85.30.Tv Field effect devices
05.40.Ca Noise

Raman study of E2 and surface phonon in zinc oxide nanoparticles surrounded by organic molecules

P.-M. Chassaing, F. Demangeot, V. Paillard, A. Zwick, N. Combe, C. Pagès, M. L. Kahn, A. Maisonnat, and B. Chaudret

Appl. Phys. Lett. 91, 053108 (2007); http://dx.doi.org/10.1063/1.2757591 (3 pages) | Cited 15 times

Online Publication Date: 30 July 2007

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Using Raman spectrometry, we obtained results showing the influence of organic ligands on the vibrational properties of small zinc oxide nanocrystals (2.1–6.8 nm). It is shown that it is possible to distinguish both mechanical and dielectric effects from the E2 nonpolar phonon mode and from a surface mode, theoretically predicted but rarely observed. It has been found that E2 phonon is not dependent on the nanocrystal size, but its frequency decreases with increasing ligand length, characteristic of a tensile stress on the nanocrystal. We report also the observation of a surface optical mode, the experimental frequency of which is in reasonable agreement with available calculations.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.35.Ja Surface and interface dynamics and vibrations
78.30.-j Infrared and Raman spectra
78.66.Hf II-VI semiconductors

Z-shaped graphene nanoribbon quantum dot device

Z. F. Wang, Q. W. Shi, Qunxiang Li, Xiaoping Wang, J. G. Hou, Huaixiu Zheng, Yao Yao, and Jie Chen

Appl. Phys. Lett. 91, 053109 (2007); http://dx.doi.org/10.1063/1.2761266 (3 pages) | Cited 31 times

Online Publication Date: 30 July 2007

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Stimulated by recent advances in isolating graphene, the authors discovered that a quantum dot can be trapped in a Z-shaped graphene nanoribbon junction. The topological structure of the junction can completely confine electronic states. By varying the junction length, the authors can alter the spatial confinement and the number of discrete levels within the junction. In addition, a quantum dot can be realized regardless of substrate induced static disorder or irregularities on the edges of the junction. The method can be used to easily design quantum dot devices. The authors also provide a platform to design zero-dimensional functional nanoscale electronic devices using graphene ribbons.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.La Quantum dots
73.63.Kv Quantum dots

Conductance of single 1,4-disubstituted benzene molecules anchored to Pt electrodes

Manabu Kiguchi, Shinichi Miura, Kenji Hara, Masaya Sawamura, and Kei Murakoshi

Appl. Phys. Lett. 91, 053110 (2007); http://dx.doi.org/10.1063/1.2757592 (3 pages) | Cited 30 times

Online Publication Date: 30 July 2007

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The authors have studied the conductance of a 1,4-disubstituted isocyanide(–NC) or thiol(–SH) benzene molecule anchored to two Pt electrodes. A single molecular junction showing a well-defined conductance value ( ∼ 3×10−2G0, G0 = 2e2/h) was fabricated with the Pt electrodes. The conductance of the molecular junction was one order higher than the previously documented value using Au electrodes. These observations could be explained by differences in the local density of states of the contact metal atom at the Fermi level and the extent of the hybridization and energy difference between the molecular and metal orbitals. Further insight into the binding strengths of the metal-anchoring group bond was obtained by statistically analyzing the stretching length of the molecular junction.
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73.61.Ph Polymers; organic compounds
85.65.+h Molecular electronic devices
72.80.Le Polymers; organic compounds (including organic semiconductors)

Highly sensitive ZnO nanowire ethanol sensor with Pd adsorption

Ting-Jen Hsueh, Shoou-Jinn Chang, Cheng-Liang Hsu, Yan-Ru Lin, and I.-Cherng Chen

Appl. Phys. Lett. 91, 053111 (2007); http://dx.doi.org/10.1063/1.2757605 (3 pages) | Cited 74 times

Online Publication Date: 31 July 2007

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The authors report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates, Pd adsorption on nanowire surfaces, and the fabrication of ZnO nanowire-based ethanol gas sensors. With Pd adsorption, it was found that measured sensitivities of the ethanol gas sensors increased from 18.5% to 44.5% at 170 °C and increased from 36.0% to 61.5% at 230 °C.
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81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials

Low-temperature conductive tip atomic force microscope for carbon nanotube probing and manipulation

M. Prior, A. Makarovski, and G. Finkelstein

Appl. Phys. Lett. 91, 053112 (2007); http://dx.doi.org/10.1063/1.2759986 (3 pages) | Cited 2 times

Online Publication Date: 1 August 2007

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The authors describe conductive tip atomic force microscope used for imaging carbon nanotubes at low temperatures. The instrument allows them to measure the tip-nanotube conductance while performing the topographic scan of the nanotubes on a nonconductive SiO2 substrate. For nanotubes weakly coupled to the contacting electrode, they observe the Coulomb blockade pattern in the tip-nanotube conductance. They reversibly modified the conductance pattern by applying the tip pressure.
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07.79.Lh Atomic force microscopes
73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Fg Nanotubes

Orientation of core-shell nanoparticles in an electric field

Jonghyun Park and Wei Lu

Appl. Phys. Lett. 91, 053113 (2007); http://dx.doi.org/10.1063/1.2767191 (3 pages) | Cited 3 times

Online Publication Date: 1 August 2007

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Coated nanoparticles, which have a core-shell structure, have many applications. This letter investigates the induced torque and orientation of such nanoparticles in an electric field. The authors show that the shell of a nanoparticle has an important effect on its orientation, even when the shell is thin and takes only a small portion of the total volume. For lossy dielectric particles, the permittivity, conductivity, field frequency, and core-shell structure together determine the magnitude and direction of the induced torque, suggesting a significant degree of experimental control over nanoparticle rotation and alignment.

Interdot coupling in a Si-based coupled double dot system for spin qubit gate

S. J. Shin, J. J. Lee, R. S. Chung, M. S. Kim, E. S. Park, J. B. Choi, N. S. Kim, K. H. Park, S. D. Lee, N. Kim, and J. H. Kim

Appl. Phys. Lett. 91, 053114 (2007); http://dx.doi.org/10.1063/1.2762289 (3 pages) | Cited 6 times

Online Publication Date: 1 August 2007

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A Si-based coupled double dot has been studied for its application to two-qubit gate. The authors manipulated electron number of each dot by using its adjacent side gate and finally observed a honeycomb charge-stability pattern, demonstrating interdot capacitive coupling. From the honeycomb diagram the capacitance-related interdot coupling parameters were extracted. Moreover, a fine structure in a conductance trace near the triple point of the honeycomb, where the tunnel coupling is maximized, was measured for finite bias, and its dependence on the interdot coupling was attributed to the spin exchange between the two dots.
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73.61.Cw Elemental semiconductors

Does the wall number of carbon nanotubes matter as conductive transparent material?

Zhongrui Li, Hom R. Kandel, Enkeleda Dervishi, Viney Saini, Alexandru S. Biris, Alexandru R. Biris, and Dan Lupu

Appl. Phys. Lett. 91, 053115 (2007); http://dx.doi.org/10.1063/1.2767215 (3 pages) | Cited 25 times

Online Publication Date: 1 August 2007

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As electrically conductive and optically transparent thin coating material, double-wall carbon nanotube network was found to have better transparency-conductance performance as compared with single-wall carbon nanotube (SWNT) and multiwall carbon nanotube (MWNT). The electronic transportability and optical properties of the SWNT films can be altered by chemical modification of thionyl chloride. Additionally, the conductance-temperature dependence analysis revealed that variable-range hopping mechanism dominates the conductance of few wall nanotube mats while fluctuation-assisted tunneling plays a more important role in that of MWNT films.
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73.63.Fg Nanotubes
78.67.Ch Nanotubes
73.40.Gk Tunneling

Detection of nanomechanical vibrations by dynamic force microscopy in higher cantilever eigenmodes

Alvaro San Paulo, Justin P. Black, Richard M. White, and Jeffrey Bokor

Appl. Phys. Lett. 91, 053116 (2007); http://dx.doi.org/10.1063/1.2767764 (3 pages) | Cited 10 times

Online Publication Date: 2 August 2007

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The authors present a method based on dynamic force microscopy to characterize subnanometer-scale mechanical vibrations in resonant micro- and nanoelectromechanical systems. The method simultaneously employs the first eigenmode of the microscope cantilever for topography imaging and the second eigenmode for the detection of the resonator vibration. Here, they apply this scheme for the characterization of a 1.6 GHz film bulk acoustic resonator, showing that it overcomes the main limitations of acoustic imaging in contact-mode atomic force microscopy. The method provides nanometer-scale lateral resolution on arbitrarily high resonant frequency systems, which makes it applicable to a wide diversity of electromechanical systems.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
07.79.Lh Atomic force microscopes

Fabrication of in situ ultrathin anodic aluminum oxide layers for nanostructuring on silicon substrate

Bo Yan, Hoa T. M. Pham, Yue Ma, Yan Zhuang, and Pasqualina M. Sarro

Appl. Phys. Lett. 91, 053117 (2007); http://dx.doi.org/10.1063/1.2767768 (3 pages) | Cited 6 times

Online Publication Date: 2 August 2007

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The authors demonstrate a method for the fabrication of in situ ultrathin porous anodic aluminum oxide layers (aspect ratio<2:1) on Si, which can be directly used as templates for nanodot preparation and for pattern transfer. The regular shape of the aluminum oxide pores is maintained even when the thickness of the aluminum oxide template is reduced to 50 nm. By using these in situ ultrathin templates as lift-off masks, the authors successfully prepared a BaxSr1−xTiO3 nanodot array on Si surface. Furthermore, these nanotemplates are employed as lithographic masks to transfer the nanopattern into the silicon substrate.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.43.Gt Powders, porous materials

Feedback controlled electromigration in four-terminal nanojunctions

Zheng Ming Wu, M. Steinacher, R. Huber, M. Calame, S. J. van der Molen, and C. Schönenberger

Appl. Phys. Lett. 91, 053118 (2007); http://dx.doi.org/10.1063/1.2760150 (3 pages) | Cited 20 times

Online Publication Date: 2 August 2007

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The authors have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). They employ four terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage U over the junction constant. After the initialization phase (U≲0.2 V), during which the temperature T increases by 80–150 °C, EM sets in shrinking the wire locally. This quickly leads to a transition from the diffusive to a quasiballistic regime (0.2 V≲U≲0.6 V). At the end of this second regime, a gap forms (U≳0.6 V). Remarkably, controlled electromigration is still possible in the quasiballistic regime.
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85.65.+h Molecular electronic devices
73.23.Ad Ballistic transport

Fabrication of nanoscale single crystal InP membranes

O. V. Hulko, B. J. Robinson, and R. N. Kleiman

Appl. Phys. Lett. 91, 053119 (2007); http://dx.doi.org/10.1063/1.2768021 (3 pages)

Online Publication Date: 2 August 2007

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The authors have developed a process for fabricating fully enclosed single crystal InP freestanding membranes using entirely front side processing. A multilayer lattice matched InP/InGaAs heterosystem incorporating a 500 Å membrane layer was grown by molecular beam epitaxy followed by two step surface patterning, first for the support structure and then for the membrane structure definition. Membranes with lateral dimensions ranging from 1 to 10 μm have been fabricated using optical and electron beam lithography. The process is easily scalable, limited only by the ability of the membrane layer to act as an effective etch stop, i.e., ∼ 30 Å.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.07.Bc Nanocrystalline materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

One by one single-electron transport in nanomechanical Coulomb blockade shuttle

Yasuo Azuma, Teruyoshi Hatanaka, Masayuki Kanehara, Toshiharu Teranishi, Simon Chorley, Jonathan Prance, Charles G. Smith, and Yutaka Majima

Appl. Phys. Lett. 91, 053120 (2007); http://dx.doi.org/10.1063/1.2768026 (3 pages) | Cited 13 times

Online Publication Date: 2 August 2007

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Transport of electrons through a Au nanodot has been observed under a nanomechanical vibration of a Au nanodot on cantilever that consists of scanning tunneling microscopy probe/vacuum/Au nanodot/cantilever. In the probe tunneling current-distance characteristics, a constant probe current of 2ef has been observed as a plateau region, where f is an eigenfrequency of the cantilever of 86 MHz. The authors discuss this quantized tunneling current in relation to one by one single-electron transport per cycle of operation in nanomechanical Coulomb blockade shuttle.
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73.23.Hk Coulomb blockade; single-electron tunneling
62.25.-g Mechanical properties of nanoscale systems
81.07.-b Nanoscale materials and structures: fabrication and characterization

Dynamic scaling in ion etching of tungsten films

Luca Peverini, Eric Ziegler, and Igor Kozhevnikov

Appl. Phys. Lett. 91, 053121 (2007); http://dx.doi.org/10.1063/1.2760157 (3 pages) | Cited 2 times

Online Publication Date: 3 August 2007

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Grazing incidence x-ray scattering is employed in situ and in real time to investigate quantitatively the time-dependent roughening of an ion bombarded tungsten layer. The evolution of surface morphology is analyzed in terms of power spectral density functions extracted directly from the measured scattering diagrams. In the [1×10−4,4.6×10−2] nm−1 spatial frequency range, roughness spectra for progressive thickness are shown to obey a universal scaling form leading to scaling exponents consistent with the prediction of the Kardar-Parisi-Zhang equation in 2+1 dimensions.
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81.05.Bx Metals, semimetals, and alloys
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.70.Ck X-ray scattering

Secondary electron imaging at gas pressures in excess of 1 kPa

Milos Toth, Marek Uncovsky, W. Ralph Knowles, and Francis S. Baker

Appl. Phys. Lett. 91, 053122 (2007); http://dx.doi.org/10.1063/1.2768031 (3 pages) | Cited 6 times

Online Publication Date: 3 August 2007

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Environmental scanning electron microscopy (ESEM) enables electron imaging of gas-mediated, direct-write nanolithography processes, liquids, and hydrated biomaterials. However, ESEM is limited by poor image quality at gas pressures in excess of ∼ 600 Pa. Here the authors achieve high quality secondary electron imaging at 2 kPa of H2O by optimizing boundary conditions that govern beam scatter and the energy distribution of low energy electrons in the gas, dielectric breakdown of the gas, and detector collection efficiency. The presented high pressure imaging method will enable imaging of hydrated materials at close to room temperature, and gas-mediated surface modification processes occurring at high pressures.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
79.20.Hx Electron impact: secondary emission
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