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Appl. Phys. Lett. 91, 061923 (2007); http://dx.doi.org/10.1063/1.2768915 (3 pages)

Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films

Maria M. Giangregorio1, Maria Losurdo1, Alberto Sacchetti1, Pio Capezzuto1, Giovanni Bruno1, Graziella Malandrino2, Ignazio L. Fragalà2, Raffaella Lo Nigro3, Lidia Armelao4, Davide Barreca4, and Eugenio Tondello4

1Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona, 4, 70126 Bari, Italy and INSTM-UdR Bari, via Orabona, 4, 70126 Bari, Italy
2Dipartimento di Scienze Chimiche, Università di Catania, Viale A. Doria 6, 95125 Catania, Italy
3Institute for Microelectronics and Microsystems, IMM-CNR, Stradale Primosole n 50, 95121 Catania, Italy
4ISTM-CNR and INSTM, University of Padova, via Marzolo, 1, 35131 Padova, Italy

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(Received 17 May 2007; accepted 16 July 2007; published online 10 August 2007)

An O2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.

© 2007 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

  • 68.55.-a

    Thin film structure and morphology

  • 52.77.-j

    Plasma applications

  • 81.16.Be

    Chemical synthesis methods

  • 77.55.-g

    Dielectric thin films

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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