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6 Aug 2007

Volume 91, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 91, 063118 (2007); http://dx.doi.org/10.1063/1.2768861 (3 pages)

Douglas C. Meier, Steve Semancik, Bradley Button, Evgheni Strelcov, and Andrei Kolmakov
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Electrospinning highly aligned long polymer nanofibers on large scale by using a tip collector

Javed Rafique, Jie Yu, Jiliang Yu, Gang Fang, K. W. Wong, Z. Zheng, H. C. Ong, and W. M. Lau

Appl. Phys. Lett. 91, 063126 (2007); http://dx.doi.org/10.1063/1.2768871 (3 pages) | Cited 17 times

Online Publication Date: 10 August 2007

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The authors developed a very simple alignment technique by which highly aligned polymer nanofibers of length >25 cm were electrospun over a lateral range as large as 63 cm. This technique is based on a modified configuration, application of a tip collector, and sideward ejection. The salient feature of the electrospinning process is the production of single nanofibers one by one, which was clearly confirmed by real-time images taken by a high-speed camera. Aligned polycaprolactone, polyacrylonitrile, and carbon nanofibers were prepared by this method.
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81.07.Bc Nanocrystalline materials
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.46.-w Structure of nanoscale materials

Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates

J. Parsons, E. H. C. Parker, D. R. Leadley, T. J. Grasby, and A. D. Capewell

Appl. Phys. Lett. 91, 063127 (2007); http://dx.doi.org/10.1063/1.2769751 (3 pages) | Cited 9 times

Online Publication Date: 10 August 2007

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Relaxation of strained silicon on 20% linear graded virtual substrates was quantified using high resolution x-ray diffraction and a defect etching technique. The thickness of strained silicon was varied between 10 and 180 nm. Relaxation was observed in layers below the critical thickness but increased to only 2% relaxation in the thickest layers even with annealings up to 950 °C. Cross-sectional transmission electron microscopy revealed stacking faults present in layers thicker than 25 nm, and nucleated 90° Shockley partial dislocations forming microtwins in the thickest layer. These features are implicated in the impediment of the relaxation process.
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81.05.Cy Elemental semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.Nn Stacking faults and other planar or extended defects
61.72.Mm Grain and twin boundaries
68.55.A- Nucleation and growth

Dynamic conductance of a nanowire cross junction

L. G. Wang and K. S. Chan

Appl. Phys. Lett. 91, 063128 (2007); http://dx.doi.org/10.1063/1.2769752 (3 pages) | Cited 3 times

Online Publication Date: 10 August 2007

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The dynamic conductance of a nanowire cross junction is investigated with the scattering matrix approach including the effect of the displacement current. The intrawire conductance is basically inductive, but it is capacitative near to a quasibound state. The interwire conductance is basically capacitative, except near a quasibound state where it is inductive. In 9–18 nm wires, interwire transmission of terahertz signals is suppressed for Fermi energy near to the first subband edge and the quasibound state below the second subband, thus limiting the junction’s operating speed. For these Fermi energies, the maximum operation frequency decreases with the increase in the wire diameter.
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73.63.Nm Quantum wires
73.21.Hb Quantum wires
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