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Applied Physics Letters / Volume 91 / Issue 7 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 91, 072514 (2007); http://dx.doi.org/10.1063/1.2770762 (3 pages)

Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN

M. A. Khaderbad1, S. Dhar2, L. Pérez3, K. H. Ploog3, A. Melnikov4, and A. D. Wieck4

1Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
2Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India
3Paul-Drude-Institut fuer Festkoerperelektronik, D-10117 Berlin, Germany
4Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum, D-44780 Bochum, Germany

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(Received 1 June 2007; accepted 19 July 2007; published online 17 August 2007)

The authors have studied the effect of annealing on the magnetic and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300 keV Gd3+ ions at room temperature at doses 2.4×1011 and 1.0×1015 cm−2, are rapid thermally annealed in flowing N2 gas up to 900 °C for 30 s. X-ray diffraction results indicate the presence of Ga and N interstitials in the implanted layers. Their densities are also found to reduce upon annealing. At the same time, magnetic measurements on these samples clearly show a reduction in the saturation magnetization as a result of the annealing for the lowest Gd incorporated sample, while in the highest Gd incorporated sample it does not change. These findings suggest that Gd might be inducing magnetic moment in Ga and/or N interstitials in giving rise to an effective colossal magnetic moment of Gd and the associated ferromagnetism observed in Gd:GaN.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, ferromagnetic materials, gadolinium, gallium compounds, III-V semiconductors, interstitials, ion implantation, magnetic moments, magnetic semiconductors, magnetisation, molecular beam epitaxial growth, semiconductor doping, semiconductor epitaxial layers, semiconductor growth, wide band gap semiconductors, X-ray diffraction

PACS

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.55.A-

    Nucleation and growth

  • 75.50.Pp

    Magnetic semiconductors

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 61.72.uj

    III-V and II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2770762

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    J. K. Hite, R. M. Frazier, R. Davies, G. T. Thaler, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett. 89, 092119 (2006)APPLAB000089000009092119000001.

    S. Dhar, O. Brandt, M. Ramsteiner, V. F. Sapega, and K. H. Ploog, Phys. Rev. Lett. 94, 037205 (2005)
    S. Dhar, L. Pérez, O. Brandt, A. Trampert, K. H. Ploog, J. Keller, and B. Beschoten, Phys. Rev. B 72, 245203 (2005).

    J. Hite, G. T. Thaler, R. Khanna, C. R. Abernathy, S. J. Pearton, J. H. Park, A. J. Steckl, and J. M. Zavada, Appl. Phys. Lett. 89, 132119 (2006)APPLAB000089000013132119000001.

    S. Y. Han, J. Hite, G. T. Thaler, R. M. Frazier, C. R. Abernathy, S. J. Pearton, H. K. Choi, W. O. Lee, Y. D. Park, J. M. Zavada, and R. Gwilliam, Appl. Phys. Lett. 88, 042102 (2006)APPLAB000088000004042102000001.

    S. Dhar, T. Kammermeir, A. Ney, L. Perez, K. H. Ploog, A. Melnikov, and A. D. Wieck, Appl. Phys. Lett. 89, 062503 (2006)APPLAB000089000006062503000001.

    Bert Pipeleers, Susan M. Hogg, and Andre Vantomme, J. Appl. Phys. 98, 123504 (2005)JAPIAU000098000012123504000001.

    C. Liu, B. Mensching, M. Zeitler, K. Volz, and B. Raushenbach, Phys. Rev. B 57, 2530 (1998).

    L. A. Christel and J. F. Gibbons, J. Appl. Phys. 52, 5050 (1981)JAPIAU000052000008005050000001.

    S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).

    J. Neugebauer and C. J. Van de Walle, Phys. Rev. B 50, 8067 (1994).

    P. Boguslawski, E. L. Briggs, and J. Bernholk, Phys. Rev. B 51, 17255 (1995).


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