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20 Aug 2007

Volume 91, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 91, 083504 (2007); http://dx.doi.org/10.1063/1.2772752 (3 pages)

Jeong-M. Choi, Jae Hoon Kim, and Seongil Im
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Unsaturated charge injection at high-frequency fatigue of Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors

A. Q. Jiang, Y. Y. Lin, and T. A. Tang

Appl. Phys. Lett. 91, 082901 (2007); http://dx.doi.org/10.1063/1.2772755 (3 pages) | Cited 4 times

Online Publication Date: 20 August 2007

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Generic phenomenon of polarization fatigue for Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors, sensitive to the fatigue number but regardless of fatigue frequency below 1 MHz, is interpreted in terms of charge injection during polarization reversal. The present results clearly demonstrate the enhanced fatigue endurance with reduced pulse width below 175 ns as well as the fatigue-free nature of the film with downscaling of the pulse width close to time of polarization reversal. The fitting on the basis of an interfacial passive-layer model yields a characteristic time of 120 ns for by-electrode charge injection responsible for the fatigue during electrical-field overstressing.
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84.32.Tt Capacitors

Plasma formation and structural modification below the visible ablation threshold in fused silica upon femtosecond laser irradiation

J. Siegel, D. Puerto, W. Gawelda, G. Bachelier, J. Solis, L. Ehrentraut, and J. Bonse

Appl. Phys. Lett. 91, 082902 (2007); http://dx.doi.org/10.1063/1.2766848 (3 pages) | Cited 16 times

Online Publication Date: 21 August 2007

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We have investigated the temporal and spatial evolution of the ablation process induced in fused silica upon irradiation with single 120 fs laser pulses at 800 nm. Time-resolved microscopy images of the surface reflectivity at 400 nm reveal the existence of a transient plasma distribution with annular shape surrounding the visible ablation crater. The material in this annular zone shows an increased reflectivity after irradiation, consistent with a local refractive index increase of approximately 0.01. White light interferometry measurements indicate a shallow surface depression in this outer region, most likely due to material densification.
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79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.60.-v Laser optical systems: design and operation
42.70.Ce Glasses, quartz
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.Mf Laser ablation

Intrinsic and extrinsic central peaks in the Brillouin light scattering spectrum of the uniaxial ferroelectric relaxor Sr0.61Ba0.39Nb2O6

Jae-Hyeon Ko and Seiji Kojima

Appl. Phys. Lett. 91, 082903 (2007); http://dx.doi.org/10.1063/1.2772771 (3 pages) | Cited 9 times

Online Publication Date: 22 August 2007

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Broadband Brillouin scattering of Sr0.61Ba0.39Nb2O6 uniaxial ferroelectric relaxors has been investigated. One broader central peak (CP) appeared at all temperatures and was ascribed to light-induced charge carriers, while the other narrower CP began to appear near the Burns temperature suggesting its origin from the formation of polar nanoregions. Temperature evolution of both CPs indicated one characteristic temperature near 450 K at which the volume and/or density of polar clusters with broken inversion symmetry began to increase resulting in a substantial increase of the intensities of both CPs and coupling between them.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Annelies Delabie, Florence Bellenger, Michel Houssa, Thierry Conard, Sven Van Elshocht, Matty Caymax, Marc Heyns, and Marc Meuris

Appl. Phys. Lett. 91, 082904 (2007); http://dx.doi.org/10.1063/1.2773759 (3 pages) | Cited 88 times

Online Publication Date: 22 August 2007

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In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the authors have deposited high-k dielectric layers on GeO2, grown at 350–450 °C in O2. ZrO2, HfO2, and Al2O3 were deposited by atomic layer deposition (ALD). GeO2 and ZrO2 or HfO2 intermix during ALD, together with partial reduction of Ge4+. Almost no intermixing or reduction occurs during Al2O3 ALD. Capacitors show well-behaved capacitance-voltage characteristics on both n- and p-Ge, indicating efficient passivation of the Ge/GeOx interface. The density of interface states is typically in the low to mid-1011 cm−2 eV−1 range, approaching state-of-the-art Si/HfO2/matal gate devices.
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81.65.Rv Passivation
84.32.Tt Capacitors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Investigation of frequency dependent and independent dielectric maxima in relaxor ferroelectric thin films

Margarita Correa, Ashok Kumar, and R. S. Katiyar

Appl. Phys. Lett. 91, 082905 (2007); http://dx.doi.org/10.1063/1.2773761 (3 pages) | Cited 7 times

Online Publication Date: 22 August 2007

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Highly oriented Pb(Sc0.5Nb0.25Ta0.25)O3 (PSNT) thin films were prepared by pulsed laser deposition. The transmission electron microscopy studies showed an epitaxial strain between the layers due to the in-plane oriented heterostructure. PSNT showed a decrease in the frequency dependent dielectric maximum temperature (Tm) compared to the bulk and a frequency independent dielectric maximum at 520 K around the Burns temperature (Td). The linear fit of the modified Curie-Wiess law at Tm provides γ ∼ 2 and Δ = 90 K, indicating diffuse phase transition and strong relaxor behavior, further supported by nonlinear fitting of Vogel-Fulcher law. Well-behaved hysteresis loops indicated ferroelectric relaxor nature of the PSNT thin films.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Processing and properties of Yb-doped BiFeO3 ceramics

Z. Yan, K. F. Wang, J. F. Qu, Y. Wang, Z. T. Song, and S. L. Feng

Appl. Phys. Lett. 91, 082906 (2007); http://dx.doi.org/10.1063/1.2775034 (3 pages) | Cited 23 times

Online Publication Date: 24 August 2007

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The authors prepared Yb-doped bismuth iron oxide ceramics (Bi1−xYbxFeO3, with 0 ⩽ x ⩽ 0.20) by rapid liquid phase sintering method and investigated the material’s structures and electrical properties. The x-ray diffraction measurements showed that the doping of Yb has induced noticeable lattice distortion in the ceramics, and a largest distortion was observed when the concentration of Yb was 15%. By doping electrical resistivity, ferroelectric and dielectric properties of the ceramics were improved. Among all samples, BiFeO3 doped with 15% Yb was found to have the smallest leakage current density (<10−7 A/cm2) and the largest remnant polarization (8.5 μC/cm2).
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.66.Fn Inorganic compounds
61.72.S- Impurities in crystals

Antiferroelectriclike polarization behavior in compositionally varying (1−x) Pb(Mg1/3Nb2/3)O3–(x) PbTiO3 multilayers

R. Ranjith and S. B. Krupanidhi

Appl. Phys. Lett. 91, 082907 (2007); http://dx.doi.org/10.1063/1.2775044 (3 pages) | Cited 6 times

Online Publication Date: 24 August 2007

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Compositionally varying multilayers of (1−x) Pb(Mg1/3N2/3)O3–(x) PbTiO3 were fabricated using pulsed laser ablation technique. An antiferroelectriclike polarization hysteresis was observed in these relaxor based multilayer systems. The competition among the intrinsic ferroelectric coupling in the relaxor ferroelectrics and the antiferroelectric coupling among the dipoles at the interface gives rise to an antiferroelectriclike polarization behavior. An increment in the coercive field and the applied field corresponding to the polarization flipping at low temperatures, provide further insight on the competition among the long-range ferroelectric interaction and the interfacial interaction in the polarization behavior of these relaxor multilayers.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Sung Il Park, Injo Ok, Hyoung-Sub Kim, Feng Zhu, Manhong Zhang, Jung Hwan Yum, Zhao Han, and Jack C. Lee

Appl. Phys. Lett. 91, 082908 (2007); http://dx.doi.org/10.1063/1.2775048 (3 pages) | Cited 2 times

Online Publication Date: 24 August 2007

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Structural approach of TiO2-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (n-GaAs) metal oxide semiconductor capacitors and their electrical characteristics are investigated. Top TiO2 with bottom HfO2 bilayer dielectric shows excellent C-V characteristics and the lowest hysteresis. Scaling down of this TiO2/HfO2 dielectric results in substantial reduction in hysteresis and equivalent oxide thickness compared to HfO2 dielectric. Reduced hysteresis is believed to be due to lower trap density of TiO2 than HfO2.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
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