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Applied Physics Letters / Volume 91 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 91, 093110 (2007); http://dx.doi.org/10.1063/1.2775801 (3 pages)

Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

M. Schmidbauer1, Zh. M. Wang2, Yu. I. Mazur2, P. M. Lytvyn2, G. J. Salamo2, D. Grigoriev3, P. Schäfer3, R. Köhler3, and M. Hanke4

1Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany
2Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
3Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin, Germany
4Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Hoher Weg 8, D-06120 Halle/Saale, Germany

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(Received 27 March 2007; accepted 28 May 2007; published online 28 August 2007)

The self-organized formation of In0.40Ga0.60As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In0.40Ga0.60As dots shows weak quantum dot alignment and a corresponding elongated shape along [0math1], while the top layer of a multilayered In0.40Ga0.60As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [0math1]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, indium compounds, molecular beam epitaxial growth, relaxation, semiconductor quantum dots, X-ray scattering

PACS

  • 81.16.Dn

    Self-assembly

  • 78.70.Ck

    X-ray scattering

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2775801

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993)APPLAB000063000023003203000001.

    T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 81, 1705 (2002)APPLAB000081000009001705000001.

    Z. M. Wang, K. Holmes, Yu. I. Mazur, and G. J. Salamo, Appl. Phys. Lett. 84, 1931 (2004)APPLAB000084000011001931000001.

    W. Q. Ma, M. L. Hussein, J. L. Shultz, G. J. Salamo, T. D. Mishima, and M. B. Johnson, Phys. Rev. B 69, 233312 (2004).

    M. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh. M. Wang, Yu. I. Mazur, P. Schäfer, M. Hanke, R. Köhler, and G. J. Salamo, Phys. Rev. Lett. 96, 066108 (2006).

    M. Schmidbauer, F. Hatami, M. Hanke, P. Schäfer, K. Braune, W. T. Masselink, R. Köhler, and M. Ramsteiner, Phys. Rev. B 65, 125320 (2002).

    M. Sugisaki, H. Ren, S. V. Nair, K. Nishi, S. Sugou, T. Okuno, and Y. Masumoto, Phys. Rev. B 59, R5300 (1999).

    I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J. M. Garcia, and P. M. Petroff, Phys. Rev. Lett. 85, 1694 (2000).

    Ch. Heyn, Phys. Rev. B 63, 033403 (2001).

    J. Tersoff and R. M. Tromp, Phys. Rev. Lett. 70, 2782 (1993).

    Y. W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).

    P. Ballett, J. B. Smathers, H. Yang, C. L. Workman, and G. J. Salamo, Appl. Phys. Lett. 77, 3406 (2000)APPLAB000077000021003406000001.

    J. Marquez, L. Geelhaar, and K. Jacobi, Appl. Phys. Lett. 78, 2309 (2001)APPLAB000078000016002309000001.

    A. Lorke, R. J. Luyken, A. O. Govorov, J. P. Kotthaus, J. M. Garcia, and P. M. Petroff, Phys. Rev. Lett. 84, 2223 (2000).

    E. Penev, P. Kratzer, and M. Scheffler, Phys. Rev. B 64, 085401 (2001).

    J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).


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