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27 Aug 2007

Volume 91, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 91, 093110 (2007); http://dx.doi.org/10.1063/1.2775801 (3 pages)

M. Schmidbauer, Zh. M. Wang, Yu. I. Mazur, P. M. Lytvyn, G. J. Salamo, D. Grigoriev, P. Schäfer, R. Köhler, and M. Hanke
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Ferromagnetic semiconductor Ge1−xCrxTe with a Curie temperature of 180 K

Y. Fukuma, H. Asada, N. Moritake, T. Irisa, and T. Koyanagi

Appl. Phys. Lett. 91, 092501 (2007); http://dx.doi.org/10.1063/1.2772669 (3 pages) | Cited 5 times

Online Publication Date: 27 August 2007

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A IV-VI ferromagnetic semiconductor Ge1−xCrxTe (x ∼ 0.06) with Curie temperature TC up to 180 K is grown by molecular-beam epitaxy. The magnetization is well reproduced from anomalous Hall effect. As the Te/Cr flux ratio increases during the growth of Ge1−xCrxTe, the spontaneous magnetization and the magnetic anisotropy are decreased and TC is increased. On the other hand, the Te/Cr flux ratio over 3.6 leads to formation of Cr–Te precipitations. The magnetoresistance measurements reveal that the increase of TC is attributed to the decrease of nonstoichiometric defects.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Gw Magnetic anisotropy
75.47.Pq Other materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Tuning the domain wall orientation in thin magnetic strips using induced anisotropy

S. Cherifi, R. Hertel, A. Locatelli, Y. Watanabe, G. Potdevin, A. Ballestrazzi, M. Balboni, and S. Heun

Appl. Phys. Lett. 91, 092502 (2007); http://dx.doi.org/10.1063/1.2778466 (3 pages) | Cited 10 times

Online Publication Date: 29 August 2007

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The authors report on a method to tune the orientation of in-plane magnetic domains and domain walls in thin ferromagnetic strips by manipulating the magnetic anisotropy of the system. Uniaxial in-plane anisotropy is induced in a controlled way by oblique evaporation of magnetic thin strips. A direct correlation between the magnetization direction and the domain wall orientation is found experimentally and confirmed by micromagnetic simulations. The domain walls in the strips are always oriented along the oblique evaporation-induced easy axis, irrespective of the shape anisotropy. The controlled manipulation of domain wall orientations could provide promising possibilities for recently proposed devices based on domain wall propagation.
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75.60.Ch Domain walls and domain structure
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.50.Cc Other ferromagnetic metals and alloys

Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defects

Qingyu Xu, Heidemarie Schmidt, Lars Hartmann, Holger Hochmuth, Michael Lorenz, Annette Setzer, Pablo Esquinazi, Christoph Meinecke, and Marius Grundmann

Appl. Phys. Lett. 91, 092503 (2007); http://dx.doi.org/10.1063/1.2778470 (3 pages) | Cited 33 times

Online Publication Date: 29 August 2007

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Mn-doped ZnO films with preferred c-axis growth orientation were prepared by pulsed laser deposition under N2 atmosphere on a-plane sapphire substrates. Large positive magnetoresistance amounting to 60% was observed at 5 K. Clear anomalous Hall effect was observed at 20 K. Ferromagnetism with Curie temperature higher than 290 K has been observed, and a deep acceptor trap due to Zn vacancies with a thermal activation energy amounting to 0.815 eV has been detected by deep-level transient spectroscopy. For comparison, only paramagnetism was observed in Mn-doped ZnO films with donor traps prepared under O2 atmosphere. Their results clearly demonstrate that the ferromagnetism in Mn-doped ZnO originates from the parallel alignment of magnetic moments mediated by acceptor defects.
Show PACS
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.47.Pq Other materials
72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Cr Saturation moments and magnetic susceptibilities
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