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27 Aug 2007

Volume 91, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 91, 093110 (2007); http://dx.doi.org/10.1063/1.2775801 (3 pages)

M. Schmidbauer, Zh. M. Wang, Yu. I. Mazur, P. M. Lytvyn, G. J. Salamo, D. Grigoriev, P. Schäfer, R. Köhler, and M. Hanke
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Some comments on contact charge relaxation

Peter M. Ireland

Appl. Phys. Lett. 91, 091501 (2007); http://dx.doi.org/10.1063/1.2776021 (3 pages)

Online Publication Date: 27 August 2007

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The established contact charge relaxation scheme of Matsuyama and Yamamoto [J. Phys. D 28, 2418 (1995); 30, 2170 (1997) ] is reassessed in light of the observations of Horn and Smith [Science 256, 362 (1992) ] and Horn et al. [Nature (London) 366, 442 (1993) ] of charge relaxation between separated charged surfaces. The multiple partial discharges observed in these studies are inconsistent with a scheme where onset and extinction are both described by a single Paschen curve. A modified version of the established scheme is therefore proposed.
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52.80.-s Electric discharges
77.22.Jp Dielectric breakdown and space-charge effects

Puzzling differences in bismuth and lead plasmas: Evidence for the significant role of neutrals in cathodic vacuum arcs

André Anders and Georgy Yu. Yushkov

Appl. Phys. Lett. 91, 091502 (2007); http://dx.doi.org/10.1063/1.2776858 (3 pages) | Cited 6 times

Online Publication Date: 27 August 2007

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Time-dependent ion charge state measurements for Pb and Bi cathodic arc plasmas revealed unexpected differences: the mean Bi ion charge state dropped much stronger and with a longer time constant. It is shown that the differences in thermal conductivity and vapor pressure led to much higher neutral density for Bi, which in turn can cause charge exchange collisions. The results have implications beyond Pb and Bi plasmas: most importantly, they imply that the “true” ion charge states, as emitted from the cathode spots, are higher than what is generally measured and published.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Vp Discharge in vacuum
52.50.Dg Plasma sources
52.70.Nc Particle measurements
52.25.Fi Transport properties
52.25.Ya Neutrals in plasmas

Improvement of output characteristics of a relativistic magnetron by creating asymmetric radio-frequency magnetic fields

Hae Jin Kim and Jin Joo Choi

Appl. Phys. Lett. 91, 091503 (2007); http://dx.doi.org/10.1063/1.2775327 (3 pages) | Cited 1 time

Online Publication Date: 27 August 2007

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Asymmetric magnetic field geometry is explored by inserting three metal tuners asymmetrically into the resonators of the A6 magnetron. The authors investigate the operating characteristics of a relativistic magnetron with asymmetrically perturbed radio-frequency (rf) magnetic fields caused by metal tuners using a three dimensional, electromagnetic particle-in-cell code MAGIC3D. By configuring perturbed rf magnetic fields, the operating characteristics of a relativistic magnetron are superior compared to those using uniform rf magnetic fields. Most significantly, by creating asymmetrically perturbed rf magnetic fields, the output power of the A6 magnetron increased by about 40% compared to the case of uniform rf magnetic fields.
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41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems

Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure

Se-Jin Kyung, Jae-Beom Park, June-Hee Lee, Jong-Tae Lim, and Geun-Young Yeom

Appl. Phys. Lett. 91, 091504 (2007); http://dx.doi.org/10.1063/1.2779096 (3 pages) | Cited 2 times

Online Publication Date: 30 August 2007

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Remote-type atmospheric pressure plasmas were generated using a modified dielectric barrier discharge with the powered electrode consisting of multipins instead of a conventional blank planar plate. For the N2/NF3 gas mixture, a high etch rate of a:Si close to 115 nm/s was obtained by adding 300 SCCM (SCCM denotes cubic centimeter per minute at STP) of NF3 to N2 [50 SLM (standard liters per minute)] at an ac rms voltage of 8.5 kV (2.5 kW, 30 kHz). However, the selectivity of a:Si to Si3N4 was as low as 1.3. A selectivity of a:Si/Si3N4>5.0 could be obtained while maintaining an etch rate of a:Si at 110 nm/s by adding 250 SCCM CF4 to the N2 (50 SLM)/NF3 (300 SCCM) mixture through the formation of a C–F polymer layer preferentially on the Si3N4 surface.
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81.05.Hd Other semiconductors
81.65.Cf Surface cleaning, etching, patterning
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