APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

7 Jan 2008

Volume 92, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 011101 (2008); http://dx.doi.org/10.1063/1.2828458 (3 pages)

F. Pedaci, S. Barland, E. Caboche, P. Genevet, M. Giudici, J. R. Tredicce, T. Ackemann, A. J. Scroggie, W. J. Firth, G.-L. Oppo, G. Tissoni, and R. Jäger
Enlarge Image | Read More
Page 1 of 8 Pages Next Page | Jump to Page
back to top
RSS Feeds
FREE

Editorial: Announcement of new topical section—Organic Electronics and Photonics

Nghi Q. Lam

Appl. Phys. Lett. 92, 010401 (2008); http://dx.doi.org/10.1063/1.2835475 (1 page)

Online Publication Date: 11 January 2008

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
01.10.Cr Announcements, news, and awards
01.30.-y Physics literature and publications
back to top
RSS Feeds

All-optical delay line using semiconductor cavity solitons

F. Pedaci, S. Barland, E. Caboche, P. Genevet, M. Giudici, J. R. Tredicce, T. Ackemann, A. J. Scroggie, W. J. Firth, G.-L. Oppo, G. Tissoni, and R. Jäger

Appl. Phys. Lett. 92, 011101 (2008); http://dx.doi.org/10.1063/1.2828458 (3 pages) | Cited 38 times

Online Publication Date: 2 January 2008

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
An all-optical delay line based on the lateral drift of cavity solitons in semiconductor microresonators is proposed and experimentally demonstrated. The functionalities of the device proposed as well as its performance is analyzed and compared with recent alternative methods based on the decrease of group velocity in the vicinity of resonances. We show that the current limitations can be overcome using broader devices with tailored material responses.
Show PACS
42.65.Tg Optical solitons; nonlinear guided waves
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
42.79.-e Optical elements, devices, and systems

Terahertz emission mechanisms in InAsxP1−x

Patric Lockhart, P. S. Dutta, Pengyu Han, and X.-C. Zhang

Appl. Phys. Lett. 92, 011102 (2008); http://dx.doi.org/10.1063/1.2827180 (3 pages) | Cited 4 times

Online Publication Date: 2 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The terahertz emission mechanisms from the surface of bulk InAsxP1−x crystals have been examined. The dominant terahertz emission mechanism from InAsxP1−x for low-fluence optical excitation is the photo-Dember effect for As compositions of 78% and greater while the surface field effect is dominant for As compositions of 50% and lower for the measured transport properties. The observed terahertz emission magnitude from the photo-Dember effect increased with As composition due to decreasing absorption depth. The observed terahertz emission magnitude from the surface field effect decreased with increasing As composition and was lower than modeled values due to the lower high-field mobility in the depletion region in those samples.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
81.05.Dz II-VI semiconductors

Influence of polymer coating on the low-temperature photoluminescence properties of ZnO nanowires

Jan-Peter Richters, Tobias Voss, Lars Wischmeier, Ilja Rückmann, and Jürgen Gutowski

Appl. Phys. Lett. 92, 011103 (2008); http://dx.doi.org/10.1063/1.2829598 (3 pages) | Cited 34 times

Online Publication Date: 2 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on low temperature photoluminescence studies of ZnO nanowires embedded in different polymers. Comparing the spectra of as-grown and embedded ZnO nanowires, we find a decrease of the deep-level emission and an increase of the near band-edge emission after the embedding process. The near band-edge emission of the embedded ZnO nanowires is dominated by a surface exciton band. The observed effects are independent of the selected polymer. The decrease of the deep-level emission scales with the balling abilities of the different polymers. We propose a model to explain the spectral changes.
Show PACS
78.67.Lt Quantum wires
73.21.Hb Quantum wires
71.35.Aa Frenkel excitons and self-trapped excitons
71.55.Gs II-VI semiconductors

Type-II InGaN-GaNAs quantum wells for lasers applications

Ronald A Arif, Hongping Zhao, and Nelson Tansu

Appl. Phys. Lett. 92, 011104 (2008); http://dx.doi.org/10.1063/1.2829600 (3 pages) | Cited 37 times

Online Publication Date: 2 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a visible III-nitride gain medium based on type-II InGaN-GaNAs quantum well (QW), employing thin dilute-As ( ∼ 3%) GaNAs layer. The utilization of GaNAs layer shifts the hole confinement to the center of the type-II QW, which significantly reduces the charge separation effect. The optical gain and spontaneous recombination rate of the type-II InGaN-GaNAs QW are analyzed and compared with those of conventional InGaN QW emitting in the blue regime (λ ∼ 450 nm), using six-band k.p formalism for energy dispersion of the III-nitride wurtzite semiconductor. The use of type-II QW leads to significant improvement in the optical gain and spontaneous recombination rate.
Show PACS
78.66.Fd III-V semiconductors
68.65.Fg Quantum wells

Erasure of stored optical information in a Pr3+:Y2SiO5 crystal

Hai-Hua Wang, Zhi-Hui Kang, Yun Jiang, Ya-Juan Li, Dun-Mao Du, Xiao-Gang Wei, Jin-Hui Wu, and Jin-Yue Gao

Appl. Phys. Lett. 92, 011105 (2008); http://dx.doi.org/10.1063/1.2828984 (3 pages) | Cited 10 times

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We experimentally demonstrate an erasure of stored optical information in a Pr3+:Y2SiO5 crystal by applying an erasing pulse to destroy atomic spin coherence. We observed an erasing efficiency of about 85%. Such an erasing operation of stored optical information may have practical applications in the field of information processing and all-optical network.
Show PACS
42.79.Vb Optical storage systems, optical disks
42.30.-d Imaging and optical processing

Adiabatic light transfer via dressed states in optical waveguide arrays

G. Della Valle, M. Ornigotti, T. Toney Fernandez, P. Laporta, S. Longhi, A. Coppa, and V. Foglietti

Appl. Phys. Lett. 92, 011106 (2008); http://dx.doi.org/10.1063/1.2828985 (3 pages) | Cited 19 times

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the experimental demonstration of adiabatic light transfer between the outer waveguides in a finite array of evanescently coupled optical waveguides with negligible excitation of all the intermediate waveguides. Such a counterintuitive light transfer scheme is an optical analogue of stimulated Raman adiabatic passage via an auxiliary dressed state proposed in atomic physics for multilevel systems.
Show PACS
42.79.Gn Optical waveguides and couplers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser

Eckhard Kühn, Angela Thränhardt, Stephan W. Koch, Wolfgang Stolz, Sangam Chatterjee, Christoph Lange, Wolfgang W. Rühle, Wendel Wohlleben, and Marcus Motzkus

Appl. Phys. Lett. 92, 011107 (2008); http://dx.doi.org/10.1063/1.2830700 (3 pages) | Cited 1 time

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The time-resolved response of an optically excited vertical-cavity surface-emitting laser is measured for quadratically chirped pump pulses. The experimental results are compared with simulations based on microscopic calculations and qualitatively good agreement is obtained. The theoretical analysis shows that the observed dependence of both, the amplitude and the temporal evolution of the laser response, on the sign and amplitude of the quadratical chirp can be attributed to the excitation-induced dephasing process of the 1s plasma-resonance of the quantum-well barriers.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Ultrafast dynamics of photoexcited coherent phonon in Bi2Te3 thin films

Alexander Q. Wu, Xianfan Xu, and Rama Venkatasubramanian

Appl. Phys. Lett. 92, 011108 (2008); http://dx.doi.org/10.1063/1.2829604 (3 pages) | Cited 10 times

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nonequilibrium A1g longitudinal optical phonon with a frequency of 1.84 THz in bismuth telluride (Bi2Te3) is coherently excited by ultrafast pulses. Time-resolved reflectivity measurements show a distinct second harmonic vibration around 3.68 THz at room temperature caused by the nonlinearity of coherent phonon potentially related to the favorable crystal structure of Bi2Te3. The scattering rate between A1g coherent phonon and room temperature incoherent phonon is derived from the pump-fluence-dependent scattering rate of A1g coherent phonon. It is also observed that energy coupling from photoexcited carriers to lattice through coherent phonon vibration is more efficient and faster at higher pump fluence.
Show PACS
78.66.Li Other semiconductors
68.55.J- Morphology of films
63.20.-e Phonons in crystal lattices
78.47.D- Time resolved spectroscopy (>1 psec)

Complete and robust bandgap switching in double-inverse-opal photonic crystals

Durga P. Aryal, Kosmas L. Tsakmakidis, Cécile Jamois, and Ortwin Hess

Appl. Phys. Lett. 92, 011109 (2008); http://dx.doi.org/10.1063/1.2829789 (3 pages) | Cited 1 time

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors theoretically demonstrate a practical scheme for robust and complete photonic bandgap switching using a three-dimensional double-inverse-opal photonic crystal. The investigated structure consists of a close-packed face-centered-cubic arrangement of spherical air pores, interconnected via air channels and embedded in a high-index (tin disulfide) backbone. We show that by placing lower-index movable dielectric scatterers (titania) inside the air pores, a complete photonic bandgap opens for certain positions of the scatterers, which altogether closes for other positions. Our analysis reveals that this switching scheme is robust to geometric imperfections and allows for sizeable bandgap switching.
Show PACS
42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.80.Fm Switching phenomena

Optical polarizer integrated with suppression of higher harmonics in the vacuum ultraviolet and soft x-ray spectral regions

Minghong Yang, Christoph Cobet, Christoph Werner, and Norbert Esser

Appl. Phys. Lett. 92, 011110 (2008); http://dx.doi.org/10.1063/1.2829796 (3 pages) | Cited 2 times

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Based on a concept of Au–Si–Au triple reflection, we present a low pass polarizer that suppresses higher-order harmonics from vacuum ultraviolet and soft x-ray monochromators. By appropriate optimization of the material and the angle of incidence, the polarizer enables the possibility to tune its cutoff edge of photon energy, and therefore to suppress higher-order diffraction light. Vacuum ultraviolet ellipsometry experiments with BESSY II synchrotron radiation in 9–23 eV have demonstrated the suppression of higher-order harmonics.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
07.60.Fs Polarimeters and ellipsometers

X-shaped third harmonic generated by ultrashort infrared pulse filamentation in air

Han Xu, Hui Xiong, Ruxin Li, Ya Cheng, Zhizhan Xu, and See Leang Chin

Appl. Phys. Lett. 92, 011111 (2008); http://dx.doi.org/10.1063/1.2830017 (3 pages) | Cited 11 times

Online Publication Date: 3 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report the measurement of the angularly resolved spectrum of the third harmonic generated in a femtosecond filament in air and its evolution with increasing pump power. Pumped by a focused infrared ultrashort pulse with a carrier wavelength of 1270 nm, a pulse duration of ∼ 20 fs, and pulse energy up to 487 μJ, the generated third harmonic is composed of an on-axis emission and a conical ring emission. When the pump power is sufficiently high, angularly resolved spectra with significant X-like feature could be observed, indicating the formation of nonlinear X wave at third harmonic.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures

A. Vardi, G. Bahir, F. Guillot, C. Bougerol, E. Monroy, S. E. Schacham, M. Tchernycheva, and F. H. Julien

Appl. Phys. Lett. 92, 011112 (2008); http://dx.doi.org/10.1063/1.2830704 (3 pages) | Cited 21 times

Online Publication Date: 4 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ = 1.7 μm of 10 mA/W (1000 V/W) at zero bias. The spectroscopic measurements are in good agreement with simulations.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling

Spatially localized one-dimensional porous silicon photonic crystals

H. Park, J. H. Dickerson, and S. M. Weiss

Appl. Phys. Lett. 92, 011113 (2008); http://dx.doi.org/10.1063/1.2830816 (3 pages) | Cited 3 times

Online Publication Date: 4 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The authors report a straightforward method to achieve spatially localized photonic band-gap structures in porous silicon. This photonic band-gap lithography technique consists of local photo-oxidation followed by exposure to methanol solvent. Reflectance measurements show that the oxidized porous silicon regions maintain their photonic band structure with only a slight blueshift while there is significant spectral degradation in the nonoxidized regions. Fourier transform infrared spectroscopy and scanning electron microscopy were performed to investigate this phenomenon. The significant spectral change in the nonoxidized regions is attributed to chemical modification of the porous silicon.
Show PACS
42.70.Qs Photonic bandgap materials
78.30.-j Infrared and Raman spectra

Reversible photoinduced change of refractive index in ion-conducting chalcohalide glass

Jing Ren, Tomas Wagner, Jiri Orava, Miloslav Frumar, and Bozena Frumarova

Appl. Phys. Lett. 92, 011114 (2008); http://dx.doi.org/10.1063/1.2830941 (3 pages) | Cited 3 times

Online Publication Date: 4 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
When irradiated by the focused Ar+ ion laser of below band-gap photon energy (2.41 and 2.54 eV), a large increase of refractive index (e.g., Δn = 6% at 1550 nm) was observed in 60GeS2–20Ga2S3–20AgI bulk glass (with bandgap of 2.71 eV). We found it surprisingly that such a large Δn quickly smeared out after the illumination even at room temperature, i.e., the refractive index will return to almost initial value within only 2 h. It is fairly rare among chalcogenides ever reported. The plausible correlation between the photorefraction effect and the ion-conducting property of glasses was also suggested.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
66.30.hh Glasses
61.80.Jh Ion radiation effects

Intra-Brillouin-zone bandgaps due to periodic misalignment in one-dimensional magnetophotonic crystals

Fei Wang and Akhlesh Lakhtakia

Appl. Phys. Lett. 92, 011115 (2008); http://dx.doi.org/10.1063/1.2830942 (3 pages) | Cited 8 times

Online Publication Date: 4 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
One-dimensional (1D) magnetophotonic crystals (MPCs) can incorporate optical gyrotropy induced by a bias magnetic field, crystalline misalignment, and differential linear birefringence in a single photonic-crystal structure. A 1D MPC whose unit cell contains two layers—one magnetophotonic, the other not—displays intra-Brillouin-zone photonic bandgaps (PBGs) in the Brillouin diagram. While the optical gyrotropy makes the PBG bandwidths tunable by a bias magnetic field, the bicrystalline misalignment modifies and can even trump this magnetic tunability. Magnetic tunability is greatly affected by a proper selection of the two materials; e.g., a large birefringence ratio between the two layers can dramatically enhance the magnetic tunability of the MPC. We also expect our 1D MPCs to be useful for detecting magnetic fields.
Show PACS
42.70.Qs Photonic bandgap materials
71.20.-b Electron density of states and band structure of crystalline solids
78.20.Fm Birefringence
78.20.Ek Optical activity
78.20.Ls Magneto-optical effects

Fine tuning of quantum-dot pillar microcavities by focused ion beam milling

H. Lohmeyer, J. Kalden, K. Sebald, C. Kruse, D. Hommel, and J. Gutowski

Appl. Phys. Lett. 92, 011116 (2008); http://dx.doi.org/10.1063/1.2827574 (3 pages) | Cited 12 times

Online Publication Date: 4 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The targeted fine tuning of semiconductor pillar microcavities by postfabrication focused ion beam milling is described for the example of ZnSe-based structures with CdSe quantum dots embedded. Using the sensitive dependence of the spectral position of the modes on the cavity diameter, the modes are precisely blueshifted by a reduction of the pillar diameter with an accuracy below 100 nm. The microcavities can be tuned to match the emission energy of individual quantum dots at a certain temperature, which results in a strongly enhanced luminescence intensity of the dots.
Show PACS
78.67.Hc Quantum dots
78.55.Et II-VI semiconductors

A multicolor quantum dot intersublevel detector with photoresponse in the terahertz range

G. Huang, J. Yang, P. Bhattacharya, G. Ariyawansa, and A. G. U. Perera

Appl. Phys. Lett. 92, 011117 (2008); http://dx.doi.org/10.1063/1.2830994 (3 pages) | Cited 6 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An In0.4Ga0.6As/GaAs multi quantum-dot layer intersublevel detector with multicolor detection is demonstrated. The n-type doping in the dots is carefully adjusted during molecular beam epitaxy of the device heterostructure to control the dark current and the occupation of the dot states as a function of temperature. The device demonstrates several photoresponse peaks in the 3–13 and 20–55 μm (15–5.4 THz) ranges. At 150 K, the response in the terahertz range has a peak responsivity of 0.05 A/W and specific detectivity D* of 2×107 Jones for an applied bias of −2 V.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Nonlinear photoresists for maskless photolithography on the basis of Ag-doped As2S3 glassy films

V. Lyubin, A. Arsh, M. Klebanov, R. Dror, and B. Sfez

Appl. Phys. Lett. 92, 011118 (2008); http://dx.doi.org/10.1063/1.2831006 (3 pages) | Cited 3 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As2S3 glassy films. Photoresists are prepared by vacuum coevaporation of As2S3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called “percolation approach.” The advantages of superlinear photoresists for maskless photolithography are briefly discussed.
Show PACS
85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.ag Semiconductors

Characterization and analysis of terahertz metamaterials based on rectangular split-ring resonators

Abul K. Azad, Antoinette J. Taylor, Evgenya Smirnova, and John F. O’Hara

Appl. Phys. Lett. 92, 011119 (2008); http://dx.doi.org/10.1063/1.2829791 (3 pages) | Cited 29 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present the experimental characterization of planar terahertz metamaterials based on rectangular electric split-ring resonator designs. Comparisons to square-ring designs reveal that rectangular shapes greatly affect the overall metamaterial response by altering the spectral separation and coupling between multiple ring resonances. A simple model is used to help us understand this coupling behavior and the extent of its effects. Advantages and disadvantages of these unconventional ring designs are discussed in terms of possible applications.
Show PACS
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

The impact of p-doping on the static and dynamic properties of 1.5 μm quantum dash lasers on InP

S. Hein, V. von Hinten, S. Höfling, and A. Forchel

Appl. Phys. Lett. 92, 011120 (2008); http://dx.doi.org/10.1063/1.2830020 (3 pages) | Cited 4 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
p-type modulation doping in the range of 0–100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.U- Doping and impurity implantation

Optically controllable transflective spatial filter with high- and low-pass or notch- and band-pass functions based on a dye-doped cholesteric liquid crystal film

H.-C. Yeh, J.-D. Wang, K.-C. Lo, C.-R. Lee, T.-S. Mo, and S.-Y. Huang

Appl. Phys. Lett. 92, 011121 (2008); http://dx.doi.org/10.1063/1.2832367 (3 pages) | Cited 6 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This study developed an optically controllable transflective spatial filter in a dye-doped cholesteric liquid crystal (DDCLC) film. The mechanism to induce the spatial filter is attributable to the photoisomerization-induced controllability of the redshift of the reflection band in the DDCLC cell. At various pumped intensities, different spatial distributions of the diffraction pattern of the object can be selected to be filtered, such that high- and low-pass or notch- and band-pass transmitted and reflected images can be simultaneously obtained, respectively.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
42.79.Kr Display devices, liquid-crystal devices

Synchronously pumped femtosecond optical parametric oscillator with integrated sum frequency generation

Felix Ruebel, Peter Haag, and Johannes A. L’huillier

Appl. Phys. Lett. 92, 011122 (2008); http://dx.doi.org/10.1063/1.2831663 (3 pages) | Cited 7 times

Online Publication Date: 7 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A synchronously pumped femtosecond optical parametric oscillator (OPO) with intracavity sum frequency generation in a single, periodically poled MgO-doped LiNbO3 (MgO:PPLN) is reported. The used MgO:PPLN crystal contains in series two sections with different poling periods. The first section which generates the 2.5 μm OPO idler wave is followed by a second section which generates the sum frequency of the pump and the idler radiation and thus provides at 589 nm yellow 140 fs long pulses with an average power of up to 190 mW. This corresponds to an optical overall conversion efficiency of 15%.
Show PACS
42.65.Lm Parametric down conversion and production of entangled photons
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

J. P. Liu, J. B. Limb, J.-H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, and K. R. Evans

Appl. Phys. Lett. 92, 011123 (2008); http://dx.doi.org/10.1063/1.2832645 (3 pages) | Cited 15 times

Online Publication Date: 8 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a-plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼ 450 nm and are independent of current level at low current densities before the heating effects are evidenced.
Show PACS
85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Nn Stacking faults and other planar or extended defects

Dielectric-loaded surface plasmon-polariton waveguides at telecommunication wavelengths: Excitation and characterization

Tobias Holmgaard, Sergey I. Bozhevolnyi, Laurent Markey, and Alain Dereux

Appl. Phys. Lett. 92, 011124 (2008); http://dx.doi.org/10.1063/1.2825588 (3 pages) | Cited 40 times

Online Publication Date: 9 January 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The excitation and propagation of strongly confined surface plasmon-polariton (SPP) waveguide modes, supported by 500-nm-wide and 550-nm-high dielectric ridges fabricated on smooth gold films, are investigated at telecommunication wavelengths using a scanning near-field optical microscope. Different tapering structures for coupling of SPPs, excited at bare gold surfaces, into dielectric-loaded SPP waveguide (DLSPPW) modes are considered. The DLSPPW mode confinement and propagation loss are characterized. The DLSPPW mode propagation along an S bend having the smallest curvature radius of 2.48 μm is shown, demonstrating the potential of DLSPPW technology for the realization of high-density photonic integrated circuits.
Show PACS
84.40.Az Waveguides, transmission lines, striplines
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
Page 1 of 8 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close