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Appl. Phys. Lett. 92, 012102 (2008); http://dx.doi.org/10.1063/1.2827188 (3 pages)

Tunable Coulomb blockade in nanostructured graphene

C. Stampfer, J. Güttinger, F. Molitor, D. Graf, T. Ihn, and K. Ensslin

Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

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(Received 24 September 2007; accepted 1 December 2007; published online 2 January 2008)

We report on Coulomb blockade and Coulomb diamond measurements on an etched, tunable single-layer graphene quantum dot. The device consisting of a graphene island connected via two narrow graphene constrictions is fully tunable by three lateral graphene gates. Coulomb blockade resonances are observed and from Coulomb diamond measurements, a charging energy of ≈ 3.5 meV is extracted. For increasing temperatures, we detect a peak broadening and a transmission increase of the nanostructured graphene barriers.

© 2008 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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Figures (click on thumbnails to view enlargements)

FIG.1
Nanostructured graphene quantum dot device. (a) Schematic illustration of the tunable graphene quantum dot. (b) Scanning force microscope (SFM) image of the investigated graphene device after RIE etching and (c) after contacting the graphene structure. The minimum feature size is approximately 50 nm. The dashed lines indicate the outline of the graphene areas. (d) shows a SFM cross section along a path x [marked in (b)] averaged over ≈ 40 nm perpendicular to the path proving the selective etch process. (e) Confocal Raman spectra recorded on the final device at the graphene island with a spot size of approximately 400 nm, clearly proving the single-layer character of the investigated device. For more information on the D, G, and 2D (also called D*) line please refer to Ref. 17.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Source-drain current as a function of the two barrier gate voltages VSG1 and VSG2 for constant bias Vbias = 200 μV. The dashed lines indicate transmission modulations and oscillations attributed to the graphene constrictions (horizontal and vertical lines) and to the island (diagonal line). Measurements are preformed at VBG = −6 V and VPG = 0 V.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Source-drain current through the graphene nanostructure as function of the plunger gate voltage VPG. (a) Clear Coulomb resonances are observed on top and next to the large scale conductance modulations. (b) shows a marked close-up of (a), and in (c) the peak spacing is plotted for 18 consecutive peaks. Measurements are preformed in the dot configuration: VBG = −6 V, VSG1 = 25 mV, and VSG2 = −510 mV.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Coulomb diamonds in differential conductance Gdiff, represented in a logarithmic color scale plot (dark regions represent low conductance). A dc bias Vbias with a small ac modulation (50 μV) is applied symmetrically across the dot, and the current through the dot is measured. Differential conductance has been directly measured by a lock-in amplifier. The charging energy is estimated to be ≈ 3.6 meV from this measurements. Measurements are preformed in the dot configuration: VBG = −6 V, VSG1 = 25 mV, and VSG2 = −510 mV.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.5
Source-drain current as a function of the plunger gate voltage VPG for different bath temperatures. Note that the plunger gate sweep includes the region shown in Fig. 3b. Measurements are preformed in the dot configuration: VBG = −6 V, VSG1 = 25 mV, and VSG2 = −510 mV. The different bath temperatures are indicated.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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