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17 Mar 2008

Volume 92, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 111901 (2008); http://dx.doi.org/10.1063/1.2895019 (3 pages)

Jinjie Shi, Sz-Chin Steven Lin, and Tony Jun Huang
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Submillisecond response nematic liquid crystal modulators using dual fringe field switching in a vertically aligned cell

Meizi Jiao, Zhibing Ge, Shin-Tson Wu, and Wing-Kit Choi

Appl. Phys. Lett. 92, 111101 (2008); http://dx.doi.org/10.1063/1.2896650 (3 pages) | Cited 8 times

Online Publication Date: 17 March 2008

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A fast response nematic liquid crystal (LC) modulator using dual fringe field switching (DFFS) mode is demonstrated. Both top and bottom substrates have pixel and common electrodes to generate complementary fringing fields. The cell consists of a vertically aligned LC layer whose dielectric anisotropy is positive. In a voltage-on state, self-imposed thin LC walls near the center of the slits and electrodes are formed and the surrounding LC molecules exert a strong restoring force. As a result, submillisecond gray-to-gray response time is achieved. Two DFFS cells are used as examples to illustrate the design principles for display and photonic applications.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Real-time spectroscopy with subgigahertz resolution using amplified dispersive Fourier transformation

Jason Chou, Daniel R. Solli, and Bahram Jalali

Appl. Phys. Lett. 92, 111102 (2008); http://dx.doi.org/10.1063/1.2896652 (3 pages) | Cited 14 times

Online Publication Date: 17 March 2008

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Dispersive Fourier transformation is a powerful technique in which spectral information is mapped into the time domain using chromatic dispersion. It replaces a spectrometer with an electronic digitizer and enables real-time spectroscopy. The fundamental problem in this technique is the trade-off between the detection sensitivity and spectral resolution, a limitation set by the digitizer’s bandwidth. This predicament is caused by the power loss associated with optical dispersion. We overcome this limitation using Raman-amplified spectrum-to-time transformation. An extraordinary lossless −11.76 ns/nm dispersive device is used to demonstrate single-shot gas absorption spectroscopy with a 950 MHz resolution—a record in real-time spectroscopy.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.30.Kq Fourier optics
78.47.D- Time resolved spectroscopy (>1 psec)
78.30.-j Infrared and Raman spectra

Highly efficient laser action in femtosecond-written Nd:yttrium aluminum garnet ceramic waveguides

G. A. Torchia, A. Rodenas, A. Benayas, E. Cantelar, L. Roso, and D. Jaque

Appl. Phys. Lett. 92, 111103 (2008); http://dx.doi.org/10.1063/1.2890073 (3 pages) | Cited 53 times

Online Publication Date: 17 March 2008

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We report continuous wave 1.06 μm laser operation in an optical waveguide fabricated in a Nd:YAG ceramic by femtosecond laser writing. Single mode and stable laser oscillation have been achieved by using the natural Fresnel reflection for optical feedback. Output laser power in excess of 80 mW and a laser slope efficiency of 60% have been demonstrated.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

G. Ariyawansa, V. Apalkov, A. G. U. Perera, S. G. Matsik, G. Huang, and P. Bhattacharya

Appl. Phys. Lett. 92, 111104 (2008); http://dx.doi.org/10.1063/1.2898521 (3 pages) | Cited 9 times

Online Publication Date: 19 March 2008

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A tricolor infrared detector with bias-selectable peaks based on tunneling quantum dot infrared photodetector (T-QDIP) architecture is demonstrated. Photoabsorption takes place in In0.4Ga0.6As quantum dots (QDs) and the excited electrons are collected by resonant tunneling across an Al0.2Ga0.8As/In0.1Ga0.9As/Al0.2Ga0.8As double barrier coupled to the QDs. The field dependent tunneling for excited carriers in T-QDIP is used to select the operating wavelength. This T-QDIP detector exhibits three distinct response peaks at 4.5/4.9±0.05, 9.5±0.05, and 16.9±0.1 μm up to 80 K. The peak detectivity is in the range of (1.0–6.0)×1012 Jones at 50 K. Bias polarity allows the selection of either the 9.5 μm or the 16.9 μm peak.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.75.Mm Spin polarized resonant tunnel junctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication

Lin Dong, Qing-Qing Sun, Yu Shi, Han Liu, Chen Wang, Shi-Jin Ding, and David Wei Zhang

Appl. Phys. Lett. 92, 111105 (2008); http://dx.doi.org/10.1063/1.2901880 (3 pages) | Cited 3 times

Online Publication Date: 19 March 2008

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III-V materials such as GaAs, GaP, and InP are deposited by atomic layer depostion (ALD) to form inverse opal due to their modifiable intrinsic optoelectronic properties, thus active photonic devices are possible to fabricate. ALD GaAs on the hydroxylated SiO2 surface was investigated under the framework of density functional theory. Our calculation results show that both half-reactions are thermodynamically and kinetically favored, exothermic by 33.73 and 25.90 kcal/mol compared to the reactants. However, longer AsH3 pulse time during the second half cycle of ALD procesis recommended since there is a high activation energy barrier existing in the second half cycle.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN

Sung-Nam Lee, H. S. Paek, H. Kim, Y. M. Park, T. Jang, and Y. Park

Appl. Phys. Lett. 92, 111106 (2008); http://dx.doi.org/10.1063/1.2888745 (3 pages) | Cited 9 times

Online Publication Date: 19 March 2008

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We investigated the properties of nonpolar a-plane InGaN/GaN multiple-quantum wells (MQWs) grown on maskless lateral epitaxial overgrowth (LEO) a-plane GaN/r-sapphire. Many surface defects with asymmetric V-shape were observed on a-plane InGaN MQWs grown on the defective regions which were seed and coalescence regions. In the low defect regions, the surface defect density of a-plane InGaN MQWs was ∼ 1.0×107/cm2, which was higher than that of conventional c-plane LEO-GaN, by measuring atomic force microscope and scanning tunneling electron microscope. The cathode luminescence intensity distribution of a-plane InGaN MQWs was significantly dependent on the distribution of surface asymmetric V-defect. Therefore, we suggest that the optical properties of a-plane InGaN active layer were affected by the asymmetric V-defects which were generated by interaction between the epitaxial defects and the limit of InGaN growth kinetics.
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68.47.Fg Semiconductor surfaces
68.65.Fg Quantum wells
78.67.De Quantum wells
68.37.Ps Atomic force microscopy (AFM)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
78.60.Hk Cathodoluminescence, ionoluminescence

A passive all-optical semiconductor device for level amplitude stabilization based on fast saturable absorber

H. Trung Nguyen, J.-L. Oudar, S. Bouchoule, G. Aubin, and S. Sauvage

Appl. Phys. Lett. 92, 111107 (2008); http://dx.doi.org/10.1063/1.2899940 (3 pages) | Cited 4 times

Online Publication Date: 19 March 2008

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A high-speed saturable-absorber-based device (response time below 2.5 ps) providing a significant amplitude stabilization is demonstrated. The experimental results allow estimating that the amplitude fluctuations of the output should be reduced by about 90% compared to the input fluctuations, within the input power range of (5–18 μJ/cm2). This device has been studied in view of its possible use for bit-1 noise reduction. When combined with a state-of-art saturable absorber device, this could provide a simple and compact scheme for the complete reamplification and reshaping regeneration of digital optical signals.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Surface plasmon polaritons generated by optical vortex beams

P. S. Tan, X.-C. Yuan, J. Lin, Q. Wang, T. Mei, R. E. Burge, and G. G. Mu

Appl. Phys. Lett. 92, 111108 (2008); http://dx.doi.org/10.1063/1.2890058 (3 pages) | Cited 10 times

Online Publication Date: 19 March 2008

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We demonstrate that surface plasmon polaritons can be generated by optical vortex beams at normal incidence focused on a metal surface. The surface plasmon resonant angle can be modulated by the radius of the optical vortex beam in the case of different metal/dielectric interface configurations. Our experiments show that the fluorescence in the vicinity of the metal film surface can effectively be excited and detected within the inner ring of the optical vortex beams due to the localized surface plasmon polaritons.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.60.-b Other luminescence and radiative recombination

Circular polarization emission from an external cavity diode laser

Fan Zhang, Jian Xu, Akhlesh Lakhtakia, Ting Zhu, Sean M. Pursel, and Mark W. Horn

Appl. Phys. Lett. 92, 111109 (2008); http://dx.doi.org/10.1063/1.2896306 (3 pages) | Cited 5 times

Online Publication Date: 20 March 2008

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An external cavity diode laser (ECDL) containing a chiral sculptured-thin-film (STF) mirror for very pure circularly polarized (CP) emission was fabricated and its single-mode, left-handed CP lasing performance was observed. The extinction ratio of the CP output was found to increase rapidly near the threshold of the injection current for the laser diode. The Jones-matrix representation of a chiral STF mirror was used to calculate the eigenstates in the external cavity of the ECDL with the transfer matrix method, the results suggesting that the only resonant mode in the external cavity of the laser is CP with the same handedness as the structural handedness of the chiral STF mirror.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.55.Px Semiconductor lasers; laser diodes

1.6 W high wall plug efficiency, continuous-wave room temperature quantum cascade laser emitting at 4.6 μm

A. Lyakh, C. Pflügl, L. Diehl, Q. J. Wang, Federico Capasso, X. J. Wang, J. Y. Fan, T. Tanbun-Ek, R. Maulini, A. Tsekoun, R. Go, and C. Kumar N. Patel

Appl. Phys. Lett. 92, 111110 (2008); http://dx.doi.org/10.1063/1.2899630 (3 pages) | Cited 67 times

Online Publication Date: 20 March 2008

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A strain-balanced, InP-based quantum cascade laser structure designed for light emission at 4.6 μm was grown by metal-organic chemical vapor deposition. A maximum total optical power of 1.6 W was obtained in continuous-wave mode at 300 K for uncoated devices processed in buried heterostructure geometry with stripe dimensions of 5 mm by 9.5 μm. Corresponding maximum wall plug efficiency and threshold current density were measured to be 8.8% and 1.05 kA/cm2, respectively. Fully hermetically packaged laser of identical dimensions produced in excess of 1.5 W under the same conditions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Subwavelength imaging of light confinement in high-Q/small-V photonic crystal nanocavity

Loic Lalouat, Benoit Cluzel, Frédérique de Fornel, Philippe Velha, Philippe Lalanne, David Peyrade, Emmanuel Picard, Thomas Charvolin, and Emmanuel Hadji

Appl. Phys. Lett. 92, 111111 (2008); http://dx.doi.org/10.1063/1.2890051 (3 pages) | Cited 9 times

Online Publication Date: 20 March 2008

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The optical near field of a high-Q and ultrasmall volume photonic crystal nanocavity is visualized with a subwavelength resolution by using a scanning near-field optical microscope (SNOM) operating at the same time in collection-scanning mode and in interaction-scanning mode. It is shown that the nanocavity resonant mode is selectively visualized by using the SNOM interaction-scanning mode while the whole electromagnetic field surrounding the nanocavity is probed using the SNOM collection-scanning mode. The different optical near-field images are compared in light of a three-dimensional numerical analysis and we demonstrate an unexpected mode coupling at the cavity resonance.
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68.37.Uv Near-field scanning microscopy and spectroscopy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.70.Qs Photonic bandgap materials
61.46.-w Structure of nanoscale materials

High quantum efficiency two color type-II InAs/GaSb n-i-p-p-i-n photodiodes

Pierre-Yves Delaunay, Binh-Minh Nguyen, Darin Hoffman, Andrew Hood, Edward Kwei-Wei Huang, Manijeh Razeghi, and Meimei Z. Tidrow

Appl. Phys. Lett. 92, 111112 (2008); http://dx.doi.org/10.1063/1.2898528 (3 pages) | Cited 17 times

Online Publication Date: 21 March 2008

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A n-i-p-p-i-n photodiode based on type-II InAs/GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 μm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 μm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Epitaxially grown n-ZnO/MgO/TiN/n+-Si(111) heterostructured light-emitting diode

X. W. Sun, J. L. Zhao, S. T. Tan, L. H. Tan, C. H. Tung, G. Q. Lo, D. L. Kwong, Y. W. Zhang, X. M. Li, and K. L. Teo

Appl. Phys. Lett. 92, 111113 (2008); http://dx.doi.org/10.1063/1.2896611 (3 pages) | Cited 19 times

Online Publication Date: 21 March 2008

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Epitaxial n-ZnO/MgO/TiN/n+-Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgO/TiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. Good epitaxial quality was found using high-resolution x-ray diffraction and transmission electron microscopy. A strong wide electroluminescence band, ranging from 350 to 850 nm and centered at ∼ 530 nm, was observed from the diode when a positive voltage was applied on Si substrate. The diode exhibited a linear light-output-current characteristic with an injection current up to 192 mA.
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68.55.ag Semiconductors
81.15.Fg Pulsed laser ablation deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Fi Electroluminescence
78.66.Li Other semiconductors
85.60.Jb Light-emitting devices

Čerenkov-type phase-matched second-harmonic emission from GaAs/AlGaAs quantum-cascade lasers

M. Austerer, H. Detz, S. Schartner, M. Nobile, W. Schrenk, A. M. Andrews, P. Klang, and G. Strasser

Appl. Phys. Lett. 92, 111114 (2008); http://dx.doi.org/10.1063/1.2901021 (3 pages) | Cited 4 times

Online Publication Date: 21 March 2008

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Second-harmonic (SH) emission in the form of Čerenkov-type phase-matched radiation has been measured for quantum-cascade lasers (QCLs) with built-in nonlinearities. The QCLs operate at 10.9 μm wavelength and, due to material dispersion, show a high collinear phase mismatch, resulting in low SH external conversion efficiencies on the order of 2 μW/W2. Due to our waveguide design, we were able to couple out and measure the generated SH light in the form of Čerenkov-type phase-matched radiation from the substrate of the device. The SH power collected from the Čerenkov beam leads to an increased external conversion efficiency of ∼ 50 μW/W2.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
41.60.Bq Cherenkov radiation
42.82.Et Waveguides, couplers, and arrays
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy

K. Shimada, Y. Terai, S. Takemoto, K. Hidaka, Y. Fujiwara, M. Suzuki, and M. Tonouchi

Appl. Phys. Lett. 92, 111115 (2008); http://dx.doi.org/10.1063/1.2901025 (3 pages) | Cited 4 times

Online Publication Date: 21 March 2008

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Ultrafast carrier dynamics and terahertz radiation from Er,O-codoped GaAs (GaAs:Er,O) have been investigated by pump and probe reflectance and time-domain terahertz spectroscopy. In pump and probe reflectance measurements, GaAs:Er,O showed faster relaxation time (0.37–0.56 ps) of photoexcited carriers than undoped GaAs. In terahertz spectroscopy, the radiated terahertz amplitude decreased and the decay time of transient photocurrent became long with increasing Er concentration. The Er concentration dependence was understood by additional electron scattering due to the Er doping. The fast relaxation time and the terahertz radiation properties suggest new applications of GaAs:Er,O for the terahertz frequency region.
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73.61.Ey III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.70.Gq Microwave and radio-frequency interactions
61.72.uj III-V and II-VI semiconductors

Linewidth measurement of external grating cavity quantum cascade laser using saturation spectroscopy

Nandini Mukherjee, Rowel Go, and C. Kumar N. Patel

Appl. Phys. Lett. 92, 111116 (2008); http://dx.doi.org/10.1063/1.2901038 (3 pages) | Cited 8 times

Online Publication Date: 21 March 2008

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A room temperature external grating cavity (EGC) quantum cascade laser (QCL) is characterized using saturation spectroscopy of NO2. The presence of two strong EGC QCL waveguide modes is evident from the saturation spectra. A linewidth of 21 MHz for each EGC-QCL mode is measured from the width of the saturation peak at 10 mTorr pressure of NO2.
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42.55.Px Semiconductor lasers; laser diodes

Rapid response mechanism of pi cell

Yubao Sun, Hongmei Ma, Zhidong Zhang, and Guangsheng Fu

Appl. Phys. Lett. 92, 111117 (2008); http://dx.doi.org/10.1063/1.2901148 (3 pages) | Cited 4 times

Online Publication Date: 21 March 2008

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The rapid response mechanism of pi cell is investigated in detail using one elastic constant and small angle approximation. The improving times of the decay time for pi cell driven by undershoot and normal method compared with that for a Freedericksz cell are calculated and it decreases with the increasing driven voltage for the undershoot method but is larger than that for the normal method. The author’s results show that the same gray-to-gray response times can be obtained using undershoot method but cannot using normal method.
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85.60.Pg Display systems
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Computing plasma focus pinch current from total current measurement

S. Lee, S. H. Saw, P. C. K. Lee, R. S. Rawat, and H. Schmidt

Appl. Phys. Lett. 92, 111501 (2008); http://dx.doi.org/10.1063/1.2899632 (3 pages) | Cited 22 times

Online Publication Date: 18 March 2008

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The total current Itotal waveform in a plasma focus discharge is the most commonly measured quantity, contrasting with the difficult measurement of Ipinch. However, yield laws should be scaled to focus pinch current Ipinch rather than the peak Itotal. This paper describes how Ipinch may be computed from the Itotal trace by fitting a computed current trace to the measured current trace using the Lee model. The method is applied to an experiment in which both the Itotal trace and the plasma sheath current trace were measured. The result shows good agreement between the values of computed and measured Ipinch.
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52.58.Lq Z-pinches, plasma focus, and other pinch devices
52.75.-d Plasma devices
52.40.Kh Plasma sheaths

Physics of plasma actuator operating in atmospheric air

Kunwar Pal Singh and Subrata Roy

Appl. Phys. Lett. 92, 111502 (2008); http://dx.doi.org/10.1063/1.2896647 (3 pages) | Cited 4 times

Online Publication Date: 19 March 2008

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The physics of plasma actuator operating in the atmospheric air has been numerically investigated. The O−, O2−, O2+, and N2+ ions have been included in the air chemistry to identify their role. For the specific case study, we find the density of positive ions is an order of magnitude higher at the positive peak of the cycle than that at the negative peak of the cycle. This difference in density levels of the species causes the development of the directional bias of the electrodynamic force. Numerical simulations indicate that positive ions play major role in the development of the positive force.
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52.75.-d Plasma devices
52.25.-b Plasma properties
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.65.-y Plasma simulation
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

Absolute evaluation of out-of-band radiation from laser-produced tin plasmas for extreme ultraviolet lithography

Hirokazu Sakaguchi, Shinsuke Fujioka, Shinichi Namba, Hajime Tanuma, Hayato Ohashi, Shintaro Suda, Masashi Shimomura, Yuki Nakai, Yasuko Kimura, Yuzuri Yasuda, Hiroaki Nishimura, Takayoshi Norimatsu, Atsushi Sunahara, Katsunobu Nishihara, Noriaki Miyanaga, et al.

Appl. Phys. Lett. 92, 111503 (2008); http://dx.doi.org/10.1063/1.2901875 (3 pages) | Cited 11 times

Online Publication Date: 21 March 2008

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Out-of-band (OOB) radiation (at wavelengths longer than 130 nm) from an extreme ultraviolet (EUV) light source reduces the precision of lithography. The energy of the OOB radiation from laser-produced Sn plasmas were measured by using an absolutely calibrated transmission grating spectrometer equipped with a charge-coupled device. The dependence of the OOB radiant energy on the mass and size of the tin fuel was clarified. The dominant source of the OOB radiation is peripheral heating around the laser spot via electron thermal conduction and radiation from the high-temperature EUV emission region.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
44.10.+i Heat conduction
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Wide-band acoustic collimating by phononic crystal composites

Jinjie Shi, Sz-Chin Steven Lin, and Tony Jun Huang

Appl. Phys. Lett. 92, 111901 (2008); http://dx.doi.org/10.1063/1.2895019 (3 pages) | Cited 31 times

Online Publication Date: 17 March 2008

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We numerically investigated the collimation phenomena in phononic crystal (PC) composites, a sequenced series of PCs with the same period but different filling ratios. The plane wave expansion (PWE) method was used to obtain the band diagrams and the equal frequency surfaces of both single PCs and PC composites. The finite difference time domain (FDTD) method was then utilized to simulate the propagation of acoustic waves inside a PC composite. The results from both PWE calculations and FDTD simulations show that in comparison to a single PC, a PC composite can significantly enlarge the collimation region and realize wide-band acoustic collimation.
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63.20.-e Phonons in crystal lattices
62.65.+k Acoustical properties of solids
71.20.-b Electron density of states and band structure of crystalline solids

Optical properties of InN containing metallic indium

Ting-Ting Kang, Akihiro Hashimoto, and Akio Yamamoto

Appl. Phys. Lett. 92, 111902 (2008); http://dx.doi.org/10.1063/1.2898706 (3 pages) | Cited 2 times

Online Publication Date: 17 March 2008

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We theoretically study the optical properties of the composite made of indium nitride (InN) containing metallic indium clusters, using quasistatic approximation and effective medium approximation. The influences of indium cluster shape and volume concentration on the optical properties of entire sample are systematically discussed. Our results can satisfactorily explain recent experiments on the dielectric function of InN containing indium [ M. Losurdo, G. Bruno, T.-H. Kim, S. Choi, and A. Brown, Appl. Phys. Lett. 88, 121928 (2006) ].
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78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

The shock-densification behavior of three distinct Ni+Al powder mixtures

Daniel E. Eakins and Naresh N. Thadhani

Appl. Phys. Lett. 92, 111903 (2008); http://dx.doi.org/10.1063/1.2896653 (3 pages) | Cited 3 times

Online Publication Date: 17 March 2008

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The shock-densification response of equivolumetric mixtures of Ni+Al powders of varying particle size and morphology has been determined through instrumented parallel-plate impact experiments. The results reveal a variation in the densification response, with crush strengths (stress at full density) ranging from 0.5 to nearly 6 GPa. A modified Fischmeister–Artz contact model was proposed to predict the crush strength of configurationally varying Ni+Al powder mixtures.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.43.Gt Powders, porous materials

A modified Vegard’s law for multisite occupancy of Ca in BaTiO3–CaTiO3 solid solutions

Soonil Lee and Clive A. Randall

Appl. Phys. Lett. 92, 111904 (2008); http://dx.doi.org/10.1063/1.2857475 (3 pages) | Cited 13 times

Online Publication Date: 17 March 2008

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The site occupancy of Ca in the CaTiO3–BaTiO3 solid solution has been investigated through an analysis of the lattice parameters and ferroelectric phase transition temperature variation. The lattice volume was found to vary in a nonlinear manner with different amounts of Ca2+ ions occupying the Ba and Ti sites near the pure BaTiO3 end member. To model the lattice volume trends in this complex case, we modify the classical Vegard’s law and incorporate a lattice volume correction to account for the ionic compensation of the acceptor charge CaTi″, with oxygen vacancies V O••. The paraelectric-ferroelectric phase transition temperature shows further evidence of a non-linear variation with composition. This is also consistent with site occupancy changes. From lattice volume and phase transition temperature variations on the Ba-site occupancy compositions, the maximum concentration of Ti-site occupancy (y) was determined and found to be approximately 0.007±0.002 and then found to remain constant for higher concentrations of Ca, specifically (0.03<x+y<0.1,Ba1−xCax+yTi1−yO3−y).
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61.66.Fn Inorganic compounds
77.80.B- Phase transitions and Curie point
61.72.jd Vacancies

Successive phase transitions of tin under shock compression

Jianbo Hu, Xianming Zhou, Hua Tan, Jiabo Li, and Chengda Dai

Appl. Phys. Lett. 92, 111905 (2008); http://dx.doi.org/10.1063/1.2898891 (3 pages) | Cited 7 times

Online Publication Date: 18 March 2008

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Longitudinal and bulk sound velocities of tin in the shock pressure range from ∼ 25 to  ∼ 80 GPa were measured using a direct reverse-impact method. The bct to bcc phase transition along the Hugoniot was identified by the discontinuity of the longitudinal sound velocity against shock pressure. The incipient melting on the Hugoniot was also revealed by the transition from longitudinal to bulk sound velocity. The shock pressure for bct-bcc phase transition and incipient melting were constrained to be ∼ 35 and ∼ 45 GPa, respectively. It is inferred that the bcc phase possesses higher shear modulus than the bct phase.
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64.70.kd Metals and alloys
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
64.70.dj Melting of specific substances
62.20.de Elastic moduli
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.50.Ef Shock wave effects in solids and liquids
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