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7 Apr 2008

Volume 92, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 92, 142501 (2008); http://dx.doi.org/10.1063/1.2905816 (3 pages)

M. C. Wu, A. Aziz, D. Morecroft, M. G. Blamire, M. C. Hickey, M. Ali, G. Burnell, and B. J. Hickey
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Nickel oxide-induced crystallization of silicon for use in thin film transistors with a SiNx diffusion filter

Jong-Yeon Kim, Jin-Woo Han, Jeong-Min Han, Young-Hwan Kim, Byeong-Yun Oh, Byoung-Yong Kim, Sang-Keuk Lee, and Dae-Shik Seo

Appl. Phys. Lett. 92, 143501 (2008); http://dx.doi.org/10.1063/1.2908036 (3 pages) | Cited 2 times

Online Publication Date: 7 April 2008

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We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. SiNx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22×106 Ni atoms  cm−2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V−1 s−1, a threshold voltage of −5.2 V, an Ion/Ioff ratio of 1.6×107, and a gate voltage swing of 0.8 V/decade.
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85.30.Tv Field effect devices

In situ electron holographic analysis of biased Si n+-p junctions

Myung-Geun Han, David J. Smith, and Martha R. McCartney

Appl. Phys. Lett. 92, 143502 (2008); http://dx.doi.org/10.1063/1.2908045 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2008

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The two-dimensional electrostatic potential distribution across Si n+-p junctions over a range of positive and negative biasing conditions has been studied in situ using off-axis electron holography. A sample holder with a movable probe as the electrode was used to bias focused-ion-beam-milled membranes during hologram acquisition. Reverse biasing of the junction resulted in an increase in potential across the junction, whereas the junction potential decreased with forward bias and eventually completely disappeared. The trends of the experimental results matched reasonably well with computer simulations.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.40.My Applications

Low-power dihexylquaterthiophene-based thin film transistors for analog applications

Dana A. Serban, Valeria Kilchytska, A. Vlad, Ana Martin-Hoyas, B. Nysten, A. M. Jonas, Y. H. Geerts, R. Lazzaroni, V. Bayot, D. Flandre, and S. Melinte

Appl. Phys. Lett. 92, 143503 (2008); http://dx.doi.org/10.1063/1.2904963 (3 pages) | Cited 3 times

Online Publication Date: 9 April 2008

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We have optimized dihexylquaterthiophene-based thin film transistors for low-power consumption and have studied their characteristics for potential introduction in analog circuits. Bottom-gate devices with Pd source and drain electrodes have been fabricated by employing different gate dielectrics. Transistors with very thin (<10 nm) silicon oxynitride dielectrics display subthreshold swing values below 100 mV/decade, cutoff frequencies approaching the kilohertz range and intrinsic gain around 45 dB, suggesting that they are promising candidates for low-power analog integration.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Low vacuum process for polymer solar cells: Effect of TiOx interlayer

Sang Jun Yoon, Jong Hyeok Park, Hang Ken Lee, and O. Ok Park

Appl. Phys. Lett. 92, 143504 (2008); http://dx.doi.org/10.1063/1.2908035 (3 pages) | Cited 16 times

Online Publication Date: 10 April 2008

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Here, the effect of integration of a TiOx interlayer on low vacuum-processible organic-based solar cells is reported. Devices with an Al electrode prepared at a low vacuum condition shows lower efficiency compared to those with an Al electrode prepared at a high vacuum condition because the interface between the active layer and Al electrode is too rough. When a TiOx layer is inserted between the active layer and Al electrode of the device, the cell efficiency is regained and much less dependent on the level of vacuum during Al deposition so that it may be possible to develop low cost process.
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84.60.Jt Photoelectric conversion

Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodes

L. F. dos Santos, Y. Galvão Gobato, V. Lopez-Richard, G. E. Marques, M. J. S. P. Brasil, M. Henini, and R. J. Airey

Appl. Phys. Lett. 92, 143505 (2008); http://dx.doi.org/10.1063/1.2908867 (3 pages) | Cited 4 times

Online Publication Date: 10 April 2008

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We have investigated the polarized emission from a n-type GaAs/AlGaAs resonant tunneling diode under magnetic field. The GaAs contact layer emission shows a large constant negative circular polarization. A similar result is observed for the quantum well, but only when electrons are injected from the substrate, while for inverted biases, the polarization tends to become positive for small voltages and large laser excitation intensities. We believe that the quantum well polarization may be associated to the partial thermalization of minority carriers on the well subbands and is thus critically dependent on the bias-controlled density of carriers accumulated in the well.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Modeling and simulation for dye-sensitized solar cells

Virginia Yong, Seng-Tiong Ho, and Robert P. H. Chang

Appl. Phys. Lett. 92, 143506 (2008); http://dx.doi.org/10.1063/1.2908204 (3 pages) | Cited 15 times

Online Publication Date: 11 April 2008

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We developed an equivalent circuit for dye-sensitized solar cells, which provides a more accurate presentation and a better fit to the experimental I-V curves and Nyquist plots than earlier literature results, as verified by simulation. A simple expression for the estimation of the Warburg coefficient from the experimental Nyquist plot is also proposed in this letter. The simulated I-V curves and Nyquist plots are in good agreement with the experimental data. The interfacial charge transfer and recombination losses at the oxide/dye/electrolyte interface are found to be the most influential factor on the overall conversion efficiency.
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84.60.Jt Photoelectric conversion
82.45.Gj Electrolytes

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

Ning Li, Eric S. Harmon, James Hyland, David B. Salzman, T. P. Ma, Yi Xuan, and P. D. Ye

Appl. Phys. Lett. 92, 143507 (2008); http://dx.doi.org/10.1063/1.2908926 (3 pages) | Cited 31 times

Online Publication Date: 11 April 2008

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InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al2O3 dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.05.Ea III-V semiconductors
85.30.Tv Field effect devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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