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7 Apr 2008

Volume 92, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 142501 (2008); http://dx.doi.org/10.1063/1.2905816 (3 pages)

M. C. Wu, A. Aziz, D. Morecroft, M. G. Blamire, M. C. Hickey, M. Ali, G. Burnell, and B. J. Hickey
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Recovery of elastic constant of ultrathin Cu films by low temperature annealing

N. Nakamura, H. Ogi, T. Shagawa, and M. Hirao

Appl. Phys. Lett. 92, 141901 (2008); http://dx.doi.org/10.1063/1.2908039 (3 pages) | Cited 5 times

Online Publication Date: 7 April 2008

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Annealing effect on the elastic constant of Cu thin films was investigated by acoustic-phonon resonance spectroscopy. Annealing treatment was performed after the deposition in vacuum condition for 30 min at various temperatures up to 200 °C. It did not cause obvious changes in the x-ray diffraction spectra, but it significantly increased the elastic constant. The elastic constant of the as-deposited Cu film was smaller than that of bulk Cu by 20%, and it recovered to the bulk value by the postannealing at 200 °C.
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68.60.Bs Mechanical and acoustical properties
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Gh Other heat and thermomechanical treatments
68.55.-a Thin film structure and morphology
62.20.dq Other elastic constants
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of SnO addition on optical absorption of bismuth borate glass and photocatalytic property of the crystallized glass

Hirokazu Masai, Takumi Fujiwara, and Hiroshi Mori

Appl. Phys. Lett. 92, 141902 (2008); http://dx.doi.org/10.1063/1.2903151 (3 pages) | Cited 6 times

Online Publication Date: 7 April 2008

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We have found that an addition of SnO in a bismuth-borate glass, CaO–B2O3–Bi2O3–Al2O3–TiO2, decreases the optical absorption coefficient in the visible region, in which selective crystallization of TiO2 was observed after heat treatment. Since selective crystallization of TiO2 was also attained in the SnO-containing glass, the transparency of TiO2 crystallized glass can be improved independently of selective crystallization of TiO2. We have also demonstrated that the rutile-nanocrystallized glass with SnO addition shows a higher photocatalytic activity than the glass without SnO, indicating that this crystallized glass has a large potential for application as transparent photocatalytic materials.
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61.43.Fs Glasses
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.-m Photochemistry
64.70.ph Nonmetallic glasses (silicates, oxides, selenides, etc.)
81.40.Gh Other heat and thermomechanical treatments
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

An integrated method to determine melting temperatures in high-pressure laser-heating experiments

Laura Robin Benedetti, Daniele Antonangeli, Daniel L. Farber, and Mohamed Mezouar

Appl. Phys. Lett. 92, 141903 (2008); http://dx.doi.org/10.1063/1.2906893 (3 pages) | Cited 3 times

Online Publication Date: 7 April 2008

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We present an integrated approach for the determination of melting in the laser-heated diamond-anvil cell by simultaneously monitoring several criteria. We combine x-ray diffraction based observations with detection of discontinuities in optical properties by spectroradiometric measurements. This approach increases the confidence of melt identification, especially with low-Z samples. We demonstrate the efficacy of the method with observations of melt in oxygen at 47 GPa (1500 K) and at 55 GPa (1850 K).
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64.70.dj Melting of specific substances
61.05.cp X-ray diffraction

Are there stable long-range ordered Fe1−xCrx compounds?

Paul Erhart, Babak Sadigh, and Alfredo Caro

Appl. Phys. Lett. 92, 141904 (2008); http://dx.doi.org/10.1063/1.2907337 (3 pages) | Cited 16 times

Online Publication Date: 7 April 2008

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The heat of formation of Fe–Cr alloys undergoes an anomalous change of sign at small Cr concentrations. This observation raises the question as to whether there are intermetallic phases present in this composition range. Here, we report the discovery of several long-range ordered structures that represent ground state phases at 0 K. In particular, we have identified a structure at 3.7% Cr with an embedding energy which is 49 meV/Cr atom below the solid solution. This implies that there is an effective long-range attractive interaction between Cr atoms. We propose that the structures found in this study complete the low temperature–low Cr region of the phase diagram.
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82.60.Cx Enthalpies of combustion, reaction, and formation
61.66.Dk Alloys
81.30.Bx Phase diagrams of metals, alloys, and oxides

Effects of AlAs interfacial layer on material and optical properties of GaAs/Ge(100) epitaxy

C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S. W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, and S. J. Lee

Appl. Phys. Lett. 92, 141905 (2008); http://dx.doi.org/10.1063/1.2908042 (3 pages) | Cited 10 times

Online Publication Date: 8 April 2008

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GaAs/AlAs/Ge(100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAs/Ge interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al–As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results.
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78.66.Fd III-V semiconductors
68.55.ag Semiconductors
78.55.Cr III-V semiconductors
66.30.Lw Diffusion of other defects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Thulium-based bulk metallic glass

H. B. Yu, P. Yu, W. H. Wang, and H. Y. Bai

Appl. Phys. Lett. 92, 141906 (2008); http://dx.doi.org/10.1063/1.2908047 (3 pages) | Cited 12 times

Online Publication Date: 8 April 2008

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We report the formation and properties of a thulium-based bulk metallic glass (BMG). Compared with other known rare-earth (RE) based BMGs, Tm-based BMGs show features of excellent glass formation ability, considerable higher elastic modulus, smaller Poisson’s ratio, high mechanical strength, and intrinsic brittleness. The reasons for the different properties between the Tm-based and other RE-based BMGs are discussed. It is expected that the Tm-based glasses with the unique properties are appropriate candidates for studying some important issues in BMGs.
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81.05.Kf Glasses (including metallic glasses)
64.70.pe Metallic glasses
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.dj Poisson's ratio
62.20.mj Brittleness

Desorption-induced first-order phase transition in a cyano-bridged compound

Y. Moritomo, F. Nakada, H. Kamioka, J. E. Kim, and M. Takata

Appl. Phys. Lett. 92, 141907 (2008); http://dx.doi.org/10.1063/1.2908049 (3 pages) | Cited 4 times

Online Publication Date: 8 April 2008

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The guest-host interaction is one of the promising tools to control the material state. Here, we found that a cyano-bridged compound Na0.50Co[Fe(CN)6]0.723.8H2O shows a first-order structural phase transition below a critical pressure Pc (150 Pa) at 300 K. Judging from suppression of the OH stretching mode in the infrared spectra, we ascribed the phase transition to desorption of the ligand waters. The phase transition accompanies a significant change of the visible absorption spectra, reflecting the strong hybridization between the Co eg state and the CNσ states.
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64.70.K- Solid-solid transitions
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
68.43.Nr Desorption kinetics

Effects of crystalline morphology on the tensile properties of electrospun polymer nanofibers

C. T. Lim, E. P. S. Tan, and S. Y. Ng

Appl. Phys. Lett. 92, 141908 (2008); http://dx.doi.org/10.1063/1.2857478 (3 pages) | Cited 31 times

Online Publication Date: 8 April 2008

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Crystalline morphology of electrospun polymeric nanofibers strongly influences the mechanical properties. In this study, electrospun polycaprolactone nanofibers with smaller diameters that are produced from dilute polymer solutions have a higher degree of molecular orientation, crystallinity, stiffness, and strength, but lower ductility. Nanofiber diameter and the resulting crystalline morphology is influenced by whether complete crystallization of polymer chains took place before or after the electrospinning jet has reached the collector. The former would result in the formation of smaller fibers with fibrillar structure and aligned lamellae, whereas, the latter would result in the formation of a misaligned lamellar structure.
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61.50.-f Structure of bulk crystals
81.40.Lm Deformation, plasticity, and creep
62.20.fk Ductility, malleability
62.20.dq Other elastic constants
81.40.Jj Elasticity and anelasticity, stress-strain relations

Innovative surface acoustic wave sensor for accurate measurement of subatmospheric pressure

P. Nicolay, O. Elmazria, F. Sarry, L. Bouvot, N. Marche, and H. Kambara

Appl. Phys. Lett. 92, 141909 (2008); http://dx.doi.org/10.1063/1.2908038 (2 pages) | Cited 4 times

Online Publication Date: 9 April 2008

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An original application for surface acoustic wave (SAW) subatmospheric pressure sensor was developed to measure pressure below 100 mTorr with very high precision. The basic operating principles and the most significant experimental results of the sensor are presented here. A simple theoretical model is proposed. This sensor provides an efficient measuring solution in a wide range of subatmospheric pressure, which has been inaccessible in past by conventional diaphragm-based SAW sensors.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
43.60.Vx Acoustic sensing and acquisition
43.58.-e Acoustical measurements and instrumentation

The influence of nitrogen plasma treatment on the lattice vibrational properties of hydrothermally grown ZnO nanorods

H. Q. Le, S. Tripathy, and S. J. Chua

Appl. Phys. Lett. 92, 141910 (2008); http://dx.doi.org/10.1063/1.2905282 (3 pages) | Cited 9 times

Online Publication Date: 9 April 2008

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In this study, the authors have investigated the optical properties of hydrothermally grown ZnO nanorods subjected to the combination of thermal annealing and nitrogen plasma treatments. In particular, ultraviolet-visible micro-Raman scattering has been used to study the influence of nitrogen incorporation in ZnO nanorods grown on GaN/sapphire templates. The band-edge photoluminescence spectra show significant changes due to nitrogen plasma treatment. In addition, visible Raman spectra show intensity enhancement of the disorder-activated vibrational modes from plasma-treated ZnO nanorods. Multiple longitudinal optical (LO) phonons are observed under ultraviolet resonant Raman excitation from these nanorods. The first-order resonant LO phonon line shape fitting is correlated to the nitrogen-induced lattice disorder.
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81.10.Dn Growth from solutions
52.77.-j Plasma applications
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors

Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealing

N. A. Suvorova, I. O. Usov, L. Stan, R. F. DePaula, A. M. Dattelbaum, Q. X. Jia, and A. A. Suvorova

Appl. Phys. Lett. 92, 141911 (2008); http://dx.doi.org/10.1063/1.2896642 (3 pages) | Cited 9 times

Online Publication Date: 9 April 2008

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Epitaxial ZnO thin films were grown on c-plane sapphire substrates by rf magnetron sputtering at room temperature followed by a rapid thermal annealing process. We found that crystallinity of the films was strongly affected by the partial oxygen pressure during deposition. Both x-ray diffraction and transmission electron microscopy studies revealed that the ZnO films grow epitaxially predominantly with aligned ZnO domains. An unresolved excitonic resonance was observed in the optical absorption spectrum. Nevertheless, refractive index and absorption edge of the ZnO films are similar to that of single crystal ZnO.
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61.72.Cc Kinetics of defect formation and annealing
68.55.ag Semiconductors
78.66.Hf II-VI semiconductors
81.15.Cd Deposition by sputtering

Suppression of near-edge optical absorption band in sputter deposited HfO2–Al2O3 nanolaminates containing nonmonoclinic HfO2

E. E. Hoppe and C. R. Aita

Appl. Phys. Lett. 92, 141912 (2008); http://dx.doi.org/10.1063/1.2907331 (3 pages) | Cited 9 times

Online Publication Date: 9 April 2008

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Nanolaminates of polycrystalline (tetragonal+orthorhombic) HfO2 and amorphous Al2O3 are sputter deposited on unheated fused SiO2, air annealed at 573–1273 K, and analyzed by x-ray diffraction and spectrophometry. Significant O 2p→Hf 5d interband absorption occurs in all films at energy E ≥ 6.2 eV. For E<6.2 eV, films annealed below 1273 K retain a featureless optical absorption edge despite further crystallization. A band with a 5.65 eV onset concurrently develops with m-HfO2 crystallization after a 1273 K anneal, indicating this phase and not nanocrystallinity per se is responsible for increased absorption.
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61.46.-w Structure of nanoscale materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments
64.70.K- Solid-solid transitions

Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

E. Luna, F. Ishikawa, P. D. Batista, and A. Trampert

Appl. Phys. Lett. 92, 141913 (2008); http://dx.doi.org/10.1063/1.2907508 (3 pages) | Cited 4 times

Online Publication Date: 9 April 2008

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The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki’s segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Dv Composition, segregation; defects and impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Pattern evolution due to energetic solid-state diffusion front in nanoscale thin film

Deeder Aurongzeb

Appl. Phys. Lett. 92, 141914 (2008); http://dx.doi.org/10.1063/1.2907848 (3 pages) | Cited 2 times

Online Publication Date: 10 April 2008

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We report the study on oscillatory pattern/domain formation due to energetic solid-state reaction in a metallic multilayer thin film using a scanning probe microscope. The observed oscillatory patterns become more ordered as the total thickness changed from 50 nm to 1.2 μm. At higher thickness, a nonlinear cross oscillation pattern is also observed, which we attribute to spinning wave. The observed oscillation is modeled in terms of perturbation in the thermal wave. Magnetization measurement shows increased coercivity for the reacted film.
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81.16.Rf Micro- and nanoscale pattern formation
68.37.-d Microscopy of surfaces, interfaces, and thin films
68.65.Ac Multilayers
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
66.30.Pa Diffusion in nanoscale solids

An approach to the bulk textured Fe81Ga19 rods with large magnetostriction

J. K. Zhou and J. G. Li

Appl. Phys. Lett. 92, 141915 (2008); http://dx.doi.org/10.1063/1.2898886 (3 pages) | Cited 10 times

Online Publication Date: 10 April 2008

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Bulk textured Fe81Ga19 alloy with large magnetostiction of up to 830 ppm is fabricated using the technique of rapid directional solidification by triggering the undercooled Fe81Ga19 melts. The saturation magnetostriction is about two times as large as the maximum of the earlier report on Fe–Ga bulk samples. The large magnetostriction is ascribed to the high concentration of Ga–Ga atom pairs created by rapid solidification and their preferential orientation in the [100] textured rod.
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75.50.Bb Fe and its alloys
75.80.+q Magnetomechanical effects, magnetostriction
81.30.Fb Solidification
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Near-infrared third-order nonlinearity of PbO–GeO2 films containing Cu and Cu2O nanoparticles

Luis A. Gómez, F. E. P. dos Santos, A. S. L. Gomes, Cid B. de Araújo, Luciana R. P. Kassab, and Windson G. Hora

Appl. Phys. Lett. 92, 141916 (2008); http://dx.doi.org/10.1063/1.2908226 (3 pages) | Cited 15 times

Online Publication Date: 10 April 2008

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We report measurements of the nonlinear (NL) refractive index n2 of lead-germanium films (LGFs) containing Cu and Cu2O nanoparticles (NPs). The thermally managed eclipse Z-scan technique with 150 fs pulses from a laser operating at 800 nm was used. The NL refractive index measured, n2 = 6.3×10−12 cm2/W has electronic origin and the NL absorption coefficient α2 is smaller than 660 cm/GW. The figure of merit n2/λα2 is enhanced by more than two orders of magnitude in comparison with the result for the LGFs without the copper based NPs.
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78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.J- Ultrafast spectroscopy (<1 psec)
42.70.Ce Glasses, quartz

Characterization of the crystallographic microstructure of the stress-induced void in Cu interconnects

Hyo-Jong Lee, Heung Nam Han, Jae-Hun Kim, Suk Hoon Kang, Yi-Gil Cho, Jeong-Yun Sun, Do Hyun Kim, and Kyu Hwan Oh

Appl. Phys. Lett. 92, 141917 (2008); http://dx.doi.org/10.1063/1.2906902 (3 pages) | Cited 2 times

Online Publication Date: 10 April 2008

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Stepwise cross-sectional crystallographic measurement was performed on the stress-induced void (SIV) of copper interconnect and it was possible to investigate the three-dimensional crystallographic structures near the submicron scale void. The void mainly happened at a triple junction of grain boundaries and there were at least two grains with high biaxial elastic modulus near the triple junction. The preferred site for the SIV could well be understood by considering the elastic anisotropy of each grain and the grain boundary type.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.66.Bi Elemental solids

First principles assessment of metal/oxide interface adhesion

Yong Jiang, John R. Smith, and Anthony G. Evans

Appl. Phys. Lett. 92, 141918 (2008); http://dx.doi.org/10.1063/1.2907339 (3 pages) | Cited 9 times

Online Publication Date: 10 April 2008

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Adhesion at the interface between metals and oxides is strongly affected by the presence of impurities and dopants. We report a strategy for characterizing the influence of such species on adhesion through systematic first principles calculations. This is demonstrated for a technologically important interface that between a γ-Ni(Al) alloy and α-Al2O3. The effects on adhesion of stoichiometry, Al activity, impurities, and dopants are thoroughly examined, both in the bulk and at the interface. A surprising discovery is that doping with Hf provides several concurrent benefits, including an increase in the work of separation of the clean stoichiometric interface by a factor of 3.
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68.35.Np Adhesion
61.72.up Other materials
68.35.Dv Composition, segregation; defects and impurities
68.35.Ct Interface structure and roughness
61.66.Bi Elemental solids
61.66.Dk Alloys

Atomic arrangements of (Ga1−xMnx)N nanorods grown on Al2O3 substrates

K. H. Lee, J. Y. Lee, J. H. Jung, T. W. Kim, H. C. Jeon, and T. W. Kang

Appl. Phys. Lett. 92, 141919 (2008); http://dx.doi.org/10.1063/1.2902321 (3 pages) | Cited 2 times

Online Publication Date: 11 April 2008

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X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1−xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1−xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1−xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
61.46.-w Structure of nanoscale materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Direct spectroscopic evidence of self-formed C60 inclusions in fullerenelike hydrogenated carbon films

J. G. Buijnsters, M. Camero, R. Gago, A. R. Landa-Canovas, C. Gómez-Aleixandre, and I. Jiménez

Appl. Phys. Lett. 92, 141920 (2008); http://dx.doi.org/10.1063/1.2903502 (3 pages) | Cited 8 times

Online Publication Date: 11 April 2008

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The detection of self-formed C60 inclusions in hydrogenated carbon (C:H) with fullerenelike (FL) structure is reported. This material is synthesized by bias-enhanced electron cyclotron resonance chemical vapor deposition at low substrate temperatures (<120 °C). The FL structure is identified by high-resolution transmission electron microscopy whereas the presence of C60 inclusions is derived from spectral signatures in the C(1s) x-ray absorption near edge structure. The formation of FL-C:H takes place for negative bias voltages higher than 100 V, in parallel with dehydrogenation and drastic improvement of the tribomechanical film properties.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
78.70.Dm X-ray absorption spectra
68.60.Bs Mechanical and acoustical properties

Reduction in crystallization time of Sb:Te films through addition of Bi

R. E. Simpson, D. W. Hewak, P. Fons, J. Tominaga, S. Guerin, and B. E. Hayden

Appl. Phys. Lett. 92, 141921 (2008); http://dx.doi.org/10.1063/1.2901161 (3 pages) | Cited 5 times

Online Publication Date: 11 April 2008

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The electrical, optical, and phase change properties of bismuth doped Sb8Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8Te2 materials show potential as the active material in phase change data storage media.
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64.70.dg Crystallization of specific substances
73.61.Ng Insulators
78.66.Nk Insulators
68.55.J- Morphology of films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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