Highly reproducible fabrication of back-gated GaAs/AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer

Valeille, Arnaud; Muraki, Koji; Hirayama, Yoshiro

doi:doi:10.1063/1.2912034

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Electronic properties of H and D doped ZnO epitaxial films

ZnO epitaxial films grown by pulsed laser deposition in an ambient of H2 or D2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O2 or bulk single crystals annealed in H2. These include temperature-independent resistivities of ∼ 0.1 Ω cm, carrier (electron) concentrations in the 1018 cm−3 range, mobilities of 20–40 cm2/V s, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultr...

Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells

We theoretically investigate the Rashba spin-orbit interaction in InAs/GaSb quantum wells (QWs). We find that the Rashba spin-splitting (RSS) sensitively depends on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for narrow InAs/GaSb QWs and the oscillating feature for wide InAs/GaSb QWs. The nonlinear and oscillating behaviors arise from the weakened and enhanced interband coupling. The RSS also show asymmetric features respect to the direction of the external electric fie...

We show for back-gated GaAs/Al_xGa_1−xAs heterostructures that a thin Ni layer deposited prior to the standard AuGeNi Ohmic contacts dramatically improves the device yield by keeping the annealed contacts from reaching the back gate 1.2 μm below the channel. A systematic investigation of the contact resistance and the back-gate characteristics as a function of the initial Ni layer thickness and the annealing temperature demonstrates that back-gated structures with contact resistance below 100 Ω can be obtained with a high yield of 90%.

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KEYWORDS and PACS

Keywords

aluminium compounds, annealing, gallium arsenide, III-V semiconductors, ohmic contacts

PACS

73.40.Ns

Metal-nonmetal contacts
61.72.Cc

Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2912034

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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