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28 Apr 2008

Volume 92, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 173301 (2008); http://dx.doi.org/10.1063/1.2912822 (3 pages)

Takeo Minari, Masataka Kano, Tetsuhiko Miyadera, Sui-Dong Wang, Yoshinobu Aoyagi, Mari Seto, Takashi Nemoto, Seiji Isoda, and Kazuhito Tsukagoshi
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High mobility InN epilayers grown on AlN epilayer templates

N. Khan, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 92, 172101 (2008); http://dx.doi.org/10.1063/1.2917473 (3 pages) | Cited 13 times

Online Publication Date: 28 April 2008

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We report on the growth of InN epilayers on AlN/sapphire templates by metal organic chemical vapor deposition. Compared to InN epilayers grown on GaN templates, significant improvements in the electrical and optical properties of InN epilayers on AlN templates were observed. An increase in electron mobility, a decrease in background electron concentration, and a redshift of photoluminescence emission peak position with increasing the growth temperature and V/III ratio were observed and a room temperature Hall mobility of 1400 cm2/V s with a free electron concentration of about 7×1018 cm−3 was obtained. The improvements were partly attributed to the use of AlN templates, which allows for higher growth temperatures leading to an enhanced supply of nitrogen atoms and a possible reduction in the incorporation of unintentional impurities and nitrogen vacancy related defects.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system

Jijun Zou, Benkang Chang, Zhi Yang, Jianliang Qiao, and Yiping Zeng

Appl. Phys. Lett. 92, 172102 (2008); http://dx.doi.org/10.1063/1.2918444 (3 pages) | Cited 2 times

Online Publication Date: 29 April 2008

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The stability and photoemission characteristics for reflection-mode GaAs photocathodes in a demountable vacuum system have been investigated by using spectral response and x-ray photoelectron spectroscopy measurements at room temperature. We find that the shape of the spectral response curve for the cathode changes with time in the vacuum system, but after applying fresh cesium to the degraded cathode, the spectral response can almost be restored. The change and restoration of curve shape are mainly attributed to the evolution of the surface barrier. We illustrate the evolution and analyze the influence of the barrier on the spectral response of the cathode.
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85.60.Ha Photomultipliers; phototubes and photocathodes

Vacancy-mediated dopant diffusion activation enthalpies for germanium

A. Chroneos, H. Bracht, R. W. Grimes, and B. P. Uberuaga

Appl. Phys. Lett. 92, 172103 (2008); http://dx.doi.org/10.1063/1.2918842 (3 pages) | Cited 58 times

Online Publication Date: 30 April 2008

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Electronic structure calculations are used to predict the activation enthalpies of diffusion for a range of impurity atoms (aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and antimony) in germanium. Consistent with experimental studies, all the impurity atoms considered diffuse via their interaction with vacancies. Overall, the calculated diffusion activation enthalpies are in good agreement with the experimental results, with the exception of indium, where the most recent experimental study suggests a significantly higher activation enthalpy. Here, we predict that indium diffuses with an activation enthalpy of 2.79 eV, essentially the same as the value determined by early radiotracer studies.
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66.30.J- Diffusion of impurities
66.30.H- Self-diffusion and ionic conduction in nonmetals
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Mq Elemental semiconductors
61.72.jd Vacancies
65.40.-b Thermal properties of crystalline solids

Spin-polarized current and spin accumulation in a three-terminal two quantum dots ring

Feng Chi, Jun Zheng, and Lian-Liang Sun

Appl. Phys. Lett. 92, 172104 (2008); http://dx.doi.org/10.1063/1.2918843 (3 pages) | Cited 32 times

Online Publication Date: 30 April 2008

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We study the coexistence of the spin-polarized current and the spin accumulation in a three-terminal quantum ring structure, in which two quantum dots (QDs) are inserted in one arm of the ring and the Rashba spin-orbit interaction (RSOI) exists in the other. We find that by properly adjusting the applied voltages in the three leads, the RSOI-induced phase factor and the parameters relevant to the QDs, the spin-polarization efficiency in the leads can achieve either 100% or infinite, and the electrons of the same or different spin directions can accumulate in the two dots, respectively. The manipulation of the electron spin in the present device relies on the RSOI and the electric fields, thus making it realizable with the currently existing technologies.
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72.25.-b Spin polarized transport
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Surface electronic properties of undoped InAlN alloys

P. D. C. King, T. D. Veal, A. Adikimenakis, Hai Lu, L. R. Bailey, E. Iliopoulos, A. Georgakilas, W. J. Schaff, and C. F. McConville

Appl. Phys. Lett. 92, 172105 (2008); http://dx.doi.org/10.1063/1.2913765 (3 pages) | Cited 8 times

Online Publication Date: 1 May 2008

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The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed.
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73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
72.20.My Galvanomagnetic and other magnetotransport effects

An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application

S. Y. Son, P. Kumar, H. Cho, K. J. Min, C. J. Kang, and R. K. Singh

Appl. Phys. Lett. 92, 172106 (2008); http://dx.doi.org/10.1063/1.2913766 (3 pages) | Cited 1 time

Online Publication Date: 1 May 2008

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An evaluation of TiB2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for TiB2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. TiB2 gate electrode was found to be suitable for use in p-channel metal oxide semiconductor device.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

Manav Sheoran, Dong Seop Kim, Ajeet Rohatgi, H. F. W. Dekkers, G. Beaucarne, Matthew Young, and Sally Asher

Appl. Phys. Lett. 92, 172107 (2008); http://dx.doi.org/10.1063/1.2917467 (3 pages) | Cited 6 times

Online Publication Date: 1 May 2008

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The stable hydrogen isotope deuterium (D), which is released during the annealing of deuterated silicon nitride films, diffuses through the crystalline silicon and is captured by a thin, amorphous layer of silicon sputtered on the rear surface. We report on the measurement of the concentration of “penetrated” D by secondary ion mass spectrometry to monitor the flux of D diffusing through single-crystalline silicon wafers. The penetrated D content in the trapping layer increases with the annealing time. However, the flux of D injected into the silicon from the silicon nitride layer decreases as annealing time increases.
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66.30.-h Diffusion in solids
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.A- Nucleation and growth
81.40.Gh Other heat and thermomechanical treatments

Boron diffusion in amorphous silicon-germanium alloys

L. A. Edelman, M. S. Phen, K. S. Jones, R. G. Elliman, and L. M. Rubin

Appl. Phys. Lett. 92, 172108 (2008); http://dx.doi.org/10.1063/1.2919085 (3 pages) | Cited 2 times

Online Publication Date: 2 May 2008

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The effect of Ge alloying on B diffusion in amorphous Si1−xGex alloys is reported for x = 0−0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.
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66.30.J- Diffusion of impurities
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