APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Apr 2008

Volume 92, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 173301 (2008); http://dx.doi.org/10.1063/1.2912822 (3 pages)

Takeo Minari, Masataka Kano, Tetsuhiko Miyadera, Sui-Dong Wang, Yoshinobu Aoyagi, Mari Seto, Takashi Nemoto, Seiji Isoda, and Kazuhito Tsukagoshi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Thermal dynamics in symmetric magnetic nanopillars driven by spin transfer

Weng L. Lim, Nicholas Anthony, Andrew Higgins, and Sergei Urazhdin

Appl. Phys. Lett. 92, 172501 (2008); http://dx.doi.org/10.1063/1.2918012 (3 pages) | Cited 3 times

Online Publication Date: 28 April 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study the effects of spin transfer on thermally activated dynamics of magnetic nanopillars with identical thicknesses of the magnetic layers. The symmetric nanopillars exhibit anomalous dependencies of switching statistics on magnetic field and current. We interpret our data in terms of simultaneous current-induced excitation of both layers. We also find evidence for coupling between the fluctuations of the layers due to the spin transfer.
Show PACS
72.25.-b Spin polarized transport
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials

Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes

Gukcheon Kim, Yuya Sakuraba, Mikihiko Oogane, Yasuo Ando, and Terunobu Miyazaki

Appl. Phys. Lett. 92, 172502 (2008); http://dx.doi.org/10.1063/1.2913163 (3 pages) | Cited 37 times

Online Publication Date: 28 April 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetic tunnel junctions (MTJs) using L10-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L10-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 °C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
75.30.Gw Magnetic anisotropy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Microstrip superconducting quantum interference device radio-frequency amplifier: Scattering parameters and input coupling

D. Kinion and John Clarke

Appl. Phys. Lett. 92, 172503 (2008); http://dx.doi.org/10.1063/1.2902173 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The forward scattering parameters of an amplifier based on a dc superconducting quantum interference device are directly measured at 4.2 K as functions of the applied magnetic flux. These parameters are equivalent to the real and imaginary components of the input impedance and forward gain of the amplifier. The results can be described using an equivalent circuit model of the fundamental resonance of the microstrip resonator which forms the input of the amplifier. The circuit model is used to determine the series capacitance required for critical coupling of the microstrip to the input circuit.
Show PACS
85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.40.Az Waveguides, transmission lines, striplines

Magnetoelastic domains and magnetic field-induced strains in ferromagnetic shape memory alloys by phase-field simulation

L. J. Li, J. Y. Li, Y. C. Shu, H. Z. Chen, and J. H. Yen

Appl. Phys. Lett. 92, 172504 (2008); http://dx.doi.org/10.1063/1.2918127 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetoelastic domains in ferromagnetic shape memory alloys evolve through either variant rearrangement or magnetization rotation, resulting in a large or a small magnetic field-induced strain depending on the magnitude of applied compressive stress. These phenomena are simulated in this letter using an unconventional phase-field model motivated by energy-minimizing multirank laminated domain structures. The results agree well with experiments, and confirm the analysis of Ma and Li [Appl. Phys. Lett. 90, 172504 (2007)] based on an energy minimization theory.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
75.60.Ch Domain walls and domain structure
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
75.10.-b General theory and models of magnetic ordering

Turing pattern formation in Pr2Fe14B-based alloy and its role in anisotropy inducement at the early stage of disproportionation

Xiao-Dong Zhang, Jing-Zhi Han, Ying-Chang Yang, Min Li, and Yang Zou

Appl. Phys. Lett. 92, 172505 (2008); http://dx.doi.org/10.1063/1.2919087 (3 pages) | Cited 3 times

Online Publication Date: 1 May 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
At the dissipative disproportionation stage, the hexagonally spotted Turing pattern is formed on the reaction front as expected in a reaction-diffusion system. Turing patterns fill three dimensions resulting in the nanosized PrH2 rods embedded in a Fe matrix. The PrH2 rods are found to be oriented along the [110] direction with the stable {111} facets and a pair of face-to-face {002} facets. Based on both the geometrical configuration and the anisotropic interfacial energy, the mechanism whereby the Fe2B phase finally takes the place of the paired {002} facets as an orientation carrier has been proposed.
Show PACS
61.46.-w Structure of nanoscale materials
82.40.Ck Pattern formation in reactions with diffusion, flow and heat transfer
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close