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28 Apr 2008

Volume 92, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 92, 173301 (2008); http://dx.doi.org/10.1063/1.2912822 (3 pages)

Takeo Minari, Masataka Kano, Tetsuhiko Miyadera, Sui-Dong Wang, Yoshinobu Aoyagi, Mari Seto, Takashi Nemoto, Seiji Isoda, and Kazuhito Tsukagoshi
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Selective organization of solution-processed organic field-effect transistors

Takeo Minari, Masataka Kano, Tetsuhiko Miyadera, Sui-Dong Wang, Yoshinobu Aoyagi, Mari Seto, Takashi Nemoto, Seiji Isoda, and Kazuhito Tsukagoshi

Appl. Phys. Lett. 92, 173301 (2008); http://dx.doi.org/10.1063/1.2912822 (3 pages) | Cited 24 times

Online Publication Date: 28 April 2008

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Semiconductor channels of organic field-effect transistors have been directly self-organized from a solution phase. The alkyl-modified surface was locally patterned by using a phenyl self-assembled monolayer (SAM) for the channels. Drop-cast small organic molecules were selectively crystallized on the phenyl SAM region. The self-organized process allows the simultaneous formation of polycrystalline transistor arrays from the patterned channels. The phenyl SAM under the channel is critical for the improvement of device stability. Further optimization of the deposition process realized direct growth of a single crystal channel from solution between prefabricated electrodes, and the single-crystal transistors exhibited excellent performance.
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85.30.Tv Field effect devices
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Potential barriers to electron carriers in C60 field-effect transistors

Atsushi Konishi, Eiji Shikoh, Yoshihiro Kubozono, and Akihiko Fujiwara

Appl. Phys. Lett. 92, 173302 (2008); http://dx.doi.org/10.1063/1.2917469 (3 pages)

Online Publication Date: 28 April 2008

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Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
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Highly efficient inverted polymer solar cell by low temperature annealing of Cs2CO3 interlayer

Hua-Hsien Liao, Li-Min Chen, Zheng Xu, Gang Li, and Yang Yang

Appl. Phys. Lett. 92, 173303 (2008); http://dx.doi.org/10.1063/1.2918983 (3 pages) | Cited 150 times

Online Publication Date: 30 April 2008

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We demonstrate a highly efficient inverted bulk heterojunction polymer solar cell based on regioregular poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester with a low temperature annealed interfacial buffer layer, cesium carbonate (Cs2CO3). This approach improves the power conversion efficiency of the inverted cell from 2.3% to 4.2%, with short-circuit current of 11.17 mA/cm2, open-circuit voltage of 0.59 V, and fill factor of 63% under AM1.5G 100 mW/cm2 irradiation. This result is comparable to the previous regular structure device on the same system. Ultraviolet photoelectron spectroscopy shows that the work function of annealed Cs2CO3 layer decreases from 3.45 to 3.06 eV. Further x-ray photoelectron spectroscopy results reveal that Cs2CO3 can decompose into low work function, doped cesium oxide Cs2O upon annealing, which is accountable for the work-function reduction and device efficiency improvement.
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84.60.Jt Photoelectric conversion
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
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Three dimensional silicon-air photonic crystals with controlled defects using interference lithography

V. Ramanan, E. Nelson, A. Brzezinski, P. V. Braun, and P. Wiltzius

Appl. Phys. Lett. 92, 173304 (2008); http://dx.doi.org/10.1063/1.2919523 (3 pages) | Cited 21 times

Online Publication Date: 1 May 2008

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Interference lithography is an attractive technique for the creation of three dimensional photonic crystals. Structures with potential for photonic applications are fabricated in a photoresist through concurrent exposure with four coherent beams of laser radiation. The polymer-air templates are used to create higher refractive index contrast photonic crystals by infilling using atomic layer deposition followed by chemical vapor deposition. These photonic crystals exhibit excellent optical properties with strong reflectance peaks at the calculated band gap frequencies. Two-photon polymerization is used to demonstrate the ability to create designed defect structures such as waveguides in silicon-air photonic crystals.
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42.70.Qs Photonic bandgap materials
85.40.Hp Lithography, masks and pattern transfer
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Low-voltage, high-efficiency blue phosphorescent organic light-emitting devices

Meng-Ting Lee, Jin-Sheng Lin, Miao-Tsai Chu, and Mei-Rurng Tseng

Appl. Phys. Lett. 92, 173305 (2008); http://dx.doi.org/10.1063/1.2916706 (3 pages) | Cited 10 times

Online Publication Date: 2 May 2008

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Low-voltage, high-efficiency blue phosphorescent organic light-emitting devices based on a composite emitter, including a wide-band-gap host, a carrier-transporting material, and an organometallic iridium dopant, have been demonstrated. The devices exhibit an external quantum efficiency of 12%, a power efficiency of 17 lm/W and a low voltage of 4.8 V at a practical brightness of 1000 cd/m2 with a CIEx,y of (0.16, 0.35), which was twofold higher than that of using the typical emitter composed of host and dopant only. The dramatic enhancement in performance can be attributed to the transport of carriers into the wide-band-gap host, which can be promoted through doping a carrier-transporting material in emitter for increasing carrier recombination.
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85.60.Jb Light-emitting devices
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Transport properties in C60 field-effect transistor with a single Schottky barrier

Yohei Ohta, Yoshihiro Kubozono, and Akihiko Fujiwara

Appl. Phys. Lett. 92, 173306 (2008); http://dx.doi.org/10.1063/1.2919799 (3 pages)

Online Publication Date: 2 May 2008

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C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.
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85.30.Tv Field effect devices
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Solution-processed polymer-free photovoltaic devices consisting of PbSe colloidal quantum dots and tetrabenzoporphyrins

Einosuke Kikuchi, Seiki Kitada, Akira Ohno, Shinji Aramaki, and Shinya Maenosono

Appl. Phys. Lett. 92, 173307 (2008); http://dx.doi.org/10.1063/1.2920166 (3 pages) | Cited 11 times

Online Publication Date: 2 May 2008

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Polymer-free photovoltaic devices were fabricated via a solution process using PbSe colloidal quantum dots and an organic semiconductor, tetrabenzoporphyrin, that can be derived from a soluble precursor. Flat heterojunction (FHJ) and bulk heterojunction (BHJ) devices were fabricated and the current-voltage characteristics of the devices were measured. Consequently, we observed photovoltaic conversion for both devices and found the energy conversion efficiency of the BHJ device (1.8×10−3%) is 40 times that of the FHJ device under 100 mW cm−2 illumination at 800 nm.
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85.60.-q Optoelectronic devices
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