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5 May 2008

Volume 92, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 92, 182104 (2008); http://dx.doi.org/10.1063/1.2917705 (3 pages)

Jiang Chen, Yibin Hu, Ke Xia, and Zhongshui Ma
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Low strain sensitivity of the dielectric property of pyrochlore Bi–Zn–Nb–O films

Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda, Rikyu Ikariyama, and Tomoaki Yamada

Appl. Phys. Lett. 92, 182901 (2008); http://dx.doi.org/10.1063/1.2919723 (3 pages) | Cited 5 times

Online Publication Date: 5 May 2008

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Thermal strain sensitivity of the dielectric property was investigated for (111)-textured polycrystalline Bi–Zn–Nb–O films. Cubic pyrochlore films with similar crystallinity and the degree of the orientation were obtained on various substrates, and their 111 lattice spacing monotonously increased with the increasing thermal expansion coefficient of the substrates. The dielectric constant at 0 kV/cm and its tunability were almost independent of the residual strain, unlike highly sensitive (Ba0.5Sr0.5)TiO3 films. This strain independent characteristic of the dielectric property of pyrochlore Bi–Zn–Nb–O film is a big advantage in actual applications.
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77.22.Ch Permittivity (dielectric function)
65.40.De Thermal expansion; thermomechanical effects

Strain effects and thickness dependence of ferroelectric properties in epitaxial BiFeO3 thin films

Hua Ma, Lang Chen, Junling Wang, J. Ma, and F. Boey

Appl. Phys. Lett. 92, 182902 (2008); http://dx.doi.org/10.1063/1.2920192 (3 pages) | Cited 14 times

Online Publication Date: 6 May 2008

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A “misfit strain-temperature” phase diagram for BiFeO3 thin film was constructed based on the Landau–Devonshire theory with the mechanical substrate effect. It is found that the polarization instabilities result in the formation of the monoclinic phases in BiFeO3 thin films. The effective substrate lattice parameter has been introduced to calculate the film thickness dependence of the polarization and the dielectric constants. The theoretical results are in agreement with the experimental data for the thickness dependence of ferroelectric properties of the BiFeO3 epitaxial thin films on SrTiO3 and Si substrates.
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77.65.Ly Strain-induced piezoelectric fields
77.80.B- Phase transitions and Curie point
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films

Room temperature giant dielectric tunability effect in bulk LuFe2O4

Chang-Hui Li, Xiang-Qun Zhang, Zhao-Hua Cheng, and Young Sun

Appl. Phys. Lett. 92, 182903 (2008); http://dx.doi.org/10.1063/1.2920775 (3 pages) | Cited 26 times

Online Publication Date: 6 May 2008

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We report the extreme sensitivity of dielectric permittivity to applied dc bias electric field in bulk LuFe2O4. A small bias field of 50 V/cm can greatly reduce the dielectric permittivity in the vicinity of room temperature, which is in strong contrast to conventional ferroelectric materials where a large electric field of the order of tens of kV/cm is required. This giant dielectric tunability effect within a broad temperature interval around room temperature is very promising for tunable device applications. The possible origins of this giant effect are discussed.
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77.22.Ch Permittivity (dielectric function)

A method to measure the electric charge injected/extracted at the metal-dielectric interface

Eugen R. Neagu

Appl. Phys. Lett. 92, 182904 (2008); http://dx.doi.org/10.1063/1.2909658 (3 pages)

Online Publication Date: 7 May 2008

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A method was proposed to determine the sign and the value of the electric charge injected/extracted at the metal-dielectric interface. The method is based on the modification of the external electric field of a dielectric when electric charge is injected/extracted onto its surface. The lowest surface charge density measured in the presented experiments was around 1.8×10−6 C m−2. The method is insensitive to the orientational polarization. The charge carriers injection/extraction process takes place no matter if there is a conduction current through the sample.
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73.40.Ns Metal-nonmetal contacts
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Giant strain in lead-free (Bi0.5Na0.5)TiO3-based single crystals

Shunsuke Teranishi, Muneyasu Suzuki, Yuji Noguchi, Masaru Miyayama, Chikako Moriyoshi, Yoshihiro Kuroiwa, Katsunori Tawa, and Shigeo Mori

Appl. Phys. Lett. 92, 182905 (2008); http://dx.doi.org/10.1063/1.2920767 (3 pages) | Cited 27 times

Online Publication Date: 7 May 2008

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A giant electric-field-induced strain of 0.87% is reported for tetragonal (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-BaTiO3 single crystals along the [100]cubic direction, which is six times as large as that of Pb(Zr0.52Ti0.48)O3 ceramics. In situ x-ray diffraction measurements and transmission electron microscope observations show that the giant strain mainly originates from switching of nanosized 90° domains. Strain measurements indicate that the strain caused by the 90° domain switching is reversible for both unipolar and bipolar electric-field applications. The reversibility of the 90° domain switching can be explained by the interaction between the spontaneous polarization and the defect dipole composed of A-site vacancy and oxygen vacancy.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
61.72.jd Vacancies

Microwave dielectric properties of graded barium strontium titanate films

M. W. Cole, C. V. Weiss, E. Ngo, S. Hirsch, L. A. Coryell, and S. P. Alpay

Appl. Phys. Lett. 92, 182906 (2008); http://dx.doi.org/10.1063/1.2919080 (3 pages) | Cited 29 times

Online Publication Date: 8 May 2008

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Compositionally graded barium strontium titanate (BaxSr1−xTiO3 or BST) multilayers (5 mol % MgO doped and undoped) were prepared via metallo-organic solution deposition on Pt–Si substrates and characterized electrically at 0.5, 5, and 10 GHz. For the undoped BST multilayers, the small-signal dielectric response, tunability, and the loss tangent at 10 GHz were 261, 25% at 1778 kV/cm, and 0.078, respectively. On the other hand, the Mg-doped BST multilayers displayed a significant improvement in the loss characteristics at 10 GHz (0.039) but the dielectric response and its tunability were lower (189 and 15%, respectively, at 1778 kV/cm).
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
68.65.Ac Multilayers
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Gm Dielectric loss and relaxation

Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics

Patrick Fiorenza, Raffaella Lo Nigro, Corrado Bongiorno, Vito Raineri, Matthew C. Ferarrelli, Derek C. Sinclair, and Anthony R. West

Appl. Phys. Lett. 92, 182907 (2008); http://dx.doi.org/10.1063/1.2919095 (3 pages) | Cited 20 times

Online Publication Date: 8 May 2008

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Nanoscale imaging of the electrical properties of CaCu3Ti4O12 ceramics has been performed using scanning impedance microscopy. Two kinds of electrical inhomogeneity are detected, namely, depletion layers at grain boundaries and calcium titanate inclusions, both of which are more resistive than the bulk of the grains. Energy filtered transmission electron microscopy was used to estimate the chemical composition of the inclusions.
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77.22.Ch Permittivity (dielectric function)
72.80.Sk Insulators
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.Mm Grain and twin boundaries

Oxygen defect accumulation at Si:HfO2 interfaces

C. Tang and R. Ramprasad

Appl. Phys. Lett. 92, 182908 (2008); http://dx.doi.org/10.1063/1.2917576 (3 pages) | Cited 12 times

Online Publication Date: 9 May 2008

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It has been shown earlier that thermodynamic and kinetic driving forces exist for an isolated oxygen defect to segregate to Si:HfO2 interfaces. In the present work, using the first principles calculations, we show that the accumulation of multiple point defects (O vacancies and interstitials) at Si:HfO2 interfaces is also thermodynamically favored and this preference is relatively insensitive to the areal density of interfacial defects. These results indicate that the O point defect chemistry can provide a rationale for the formation of interfacial phases.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.jd Vacancies
61.72.jj Interstitials
68.43.Bc Ab initio calculations of adsorbate structure and reactions

Domain dynamics in piezoresponse force spectroscopy: Quantitative deconvolution and hysteresis loop fine structure

Igor K. Bdikin, Andrei L. Kholkin, Anna N. Morozovska, Sergei V. Svechnikov, Seung-Hyun Kim, and Sergei V. Kalinin

Appl. Phys. Lett. 92, 182909 (2008); http://dx.doi.org/10.1063/1.2919792 (3 pages) | Cited 11 times

Online Publication Date: 9 May 2008

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Domain dynamics in the piezoresponse force spectroscopy (PFS) experiment is studied using the combination of local hysteresis loop acquisition with simultaneous domain imaging. The analytical theory for PFS signal from domain of arbitrary cross section and length is developed for the analysis of experimental data on Pb(Zr,Ti)O3 films. The results suggest formation of oblate domain at early stage of the nucleation and growth, consistent with efficient screening of depolarization field. The fine structure of the hysteresis loop is shown to be related to the observed jumps in domain geometry during domain wall propagation (nanoscale Barkhausen jumps), indicative of strong domain-defect interactions.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced tunable performance

Wangyang Fu, Hong Wang, Lingzhu Cao, and Yueliang Zhou

Appl. Phys. Lett. 92, 182910 (2008); http://dx.doi.org/10.1063/1.2924278 (3 pages) | Cited 11 times

Online Publication Date: 9 May 2008

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Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films were deliberately deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition and used as tunable materials. The hetero-layered films exhibit prominently enhanced tunable performance compared to previous reported dielectric/ferroelectric layered composite films, i.e., a repeatable large tunability of 55%–60% measured under dc bias field of 570 kV/cm, with temperature insensitive permittivity near room temperature, while the dielectric losses can be safely maintained below 0.5%. The results indicate that Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films are excellent candidates for electrically steerable applications.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition

Giant dielectric response in Pb(Zr,Ti)O3–Pb2Ru2O6.5 all-ceramic percolative composite

Vid Bobnar, Marko Hrovat, Janez Holc, and Marija Kosec

Appl. Phys. Lett. 92, 182911 (2008); http://dx.doi.org/10.1063/1.2924287 (3 pages) | Cited 2 times

Online Publication Date: 9 May 2008

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An exceptionally high dielectric constant was obtained by making use of the conductive percolative phenomenon in all-ceramic composite made of conductive Pb2Ru2O6.5 and ferroelectric Pb(Zr,Ti)O3 perovskite systems. The dielectric constant in Pb(Zr,Ti)O3–Pb2Ru2O6.5 composite actually diverges on approaching the percolation threshold—values as high as 40 000 were detected at room temperature at 1 kHz. Fit of the data, obtained for samples of different compositions, revealed critical exponent and percolation point, which reasonably agree with the theoretically predicted values.
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77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
64.60.F- Equilibrium properties near critical points, critical exponents
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