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5 May 2008

Volume 92, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 92, 182104 (2008); http://dx.doi.org/10.1063/1.2917705 (3 pages)

Jiang Chen, Yibin Hu, Ke Xia, and Zhongshui Ma
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Dielectrophoretic particle dynamics in alternating-current electro-osmotic micropumps

Bernhard Weiss, Wolfgang Hilber, Roman Holly, Philipp Gittler, Bernhard Jakoby, and Kurt Hingerl

Appl. Phys. Lett. 92, 184101 (2008); http://dx.doi.org/10.1063/1.2918129 (3 pages) | Cited 5 times

Online Publication Date: 5 May 2008

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This letter deals with the dynamics of dielectric microparticles in alternating-current electro-osmotic micropumps, which is based on the competitive interplay of inertial, dielectrophoretic, and viscous drag forces. The electric field and the electro-osmotic flow are modeled and computed by means of finite elements and particle trajectories are evaluated taking into account the forces above. Thereby, mean traveling height and velocity depend on driving voltage and frequency, which allows for an effective type of particle manipulation and separation. The obtained particle velocities show good agreement with measured velocities of hollow glass beads in a device realized in SU8/glass technology.
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47.85.Np Fluidics
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.11.Fg Finite element methods

Electroresistance of La0.8Li0.2MnO3

R. A. Lewis

Appl. Phys. Lett. 92, 184102 (2008); http://dx.doi.org/10.1063/1.2917443 (3 pages) | Cited 4 times

Online Publication Date: 9 May 2008

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The electroresistance of La0.8Li0.2MnO3 has been measured at many applied currents and temperatures. As the magnitude of the current decreases, the electroresistance becomes more pronounced. Substantial electroresistance is observed over a wide range of temperatures. The greatest effect occurs well below the temperature of the metal-insulator transition.
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72.60.+g Mixed conductivity and conductivity transitions
72.80.Sk Insulators

Silicon depletion layer actuators

J. H. T. Ransley, A. Aziz, C. Durkan, and A. A. Seshia

Appl. Phys. Lett. 92, 184103 (2008); http://dx.doi.org/10.1063/1.2920440 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2008

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The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions.
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85.30.Kk Junction diodes
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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